JP2018088462A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP2018088462A JP2018088462A JP2016230502A JP2016230502A JP2018088462A JP 2018088462 A JP2018088462 A JP 2018088462A JP 2016230502 A JP2016230502 A JP 2016230502A JP 2016230502 A JP2016230502 A JP 2016230502A JP 2018088462 A JP2018088462 A JP 2018088462A
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- layer
- silicide
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 238000000034 method Methods 0.000 title claims abstract description 21
- 239000004065 semiconductor Substances 0.000 title claims abstract description 17
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 43
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 43
- 229910052751 metal Inorganic materials 0.000 claims abstract description 23
- 239000002184 metal Substances 0.000 claims abstract description 23
- 238000010438 heat treatment Methods 0.000 claims abstract description 12
- 230000001131 transforming effect Effects 0.000 abstract 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 44
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 44
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 40
- 229910052759 nickel Inorganic materials 0.000 description 19
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 12
- 229910052750 molybdenum Inorganic materials 0.000 description 12
- 239000011733 molybdenum Substances 0.000 description 12
- 239000000758 substrate Substances 0.000 description 10
- 239000010936 titanium Substances 0.000 description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 7
- 239000010931 gold Substances 0.000 description 7
- 229910052719 titanium Inorganic materials 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- 230000007547 defect Effects 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 3
- 229910000990 Ni alloy Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- CNEOGBIICRAWOH-UHFFFAOYSA-N methane;molybdenum Chemical compound C.[Mo] CNEOGBIICRAWOH-UHFFFAOYSA-N 0.000 description 2
- PEUPIGGLJVUNEU-UHFFFAOYSA-N nickel silicon Chemical compound [Si].[Ni] PEUPIGGLJVUNEU-UHFFFAOYSA-N 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- QIJNJJZPYXGIQM-UHFFFAOYSA-N 1lambda4,2lambda4-dimolybdacyclopropa-1,2,3-triene Chemical compound [Mo]=C=[Mo] QIJNJJZPYXGIQM-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910039444 MoC Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0405—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising semiconducting carbon, e.g. diamond, diamond-like carbon
- H01L21/0425—Making electrodes
- H01L21/043—Ohmic electrodes
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0405—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising semiconducting carbon, e.g. diamond, diamond-like carbon
- H01L21/042—Changing their shape, e.g. forming recesses
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/32—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being within the semiconductor body
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/6606—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
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- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66143—Schottky diodes
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
12:SiCウエハ
14:n型低濃度層
16:n型高濃度層
20:ショットキー電極
30:オーミック電極
32:シリサイド層
34:チタン層
36:ニッケル層
38:金層
40:破砕層
42:モリブデン層
44:ニッケル層
Claims (1)
- SiCウエハの表面を研削する工程であって、前記表面に露出する範囲に5nm以上の厚さを有する破砕層が形成される工程と、
前記破砕層を覆う金属層を形成する工程と、
加熱によって前記金属層と前記破砕層を反応させることによって前記SiCウエハにオーミック接触するシリサイド層を形成する工程であって、前記金属層に覆われている範囲の前記破砕層の少なくとも一部がその厚さ方向全域においてシリサイド層に変化する工程、
を有する半導体装置の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016230502A JP6737987B2 (ja) | 2016-11-28 | 2016-11-28 | 半導体装置の製造方法 |
US15/789,273 US20180151364A1 (en) | 2016-11-28 | 2017-10-20 | Method of manufacturing semiconductor device |
CN201711192049.1A CN108172508A (zh) | 2016-11-28 | 2017-11-24 | 半导体装置的制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016230502A JP6737987B2 (ja) | 2016-11-28 | 2016-11-28 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP2018088462A true JP2018088462A (ja) | 2018-06-07 |
JP6737987B2 JP6737987B2 (ja) | 2020-08-12 |
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JP2016230502A Active JP6737987B2 (ja) | 2016-11-28 | 2016-11-28 | 半導体装置の製造方法 |
Country Status (3)
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US (1) | US20180151364A1 (ja) |
JP (1) | JP6737987B2 (ja) |
CN (1) | CN108172508A (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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US10665459B2 (en) * | 2016-10-13 | 2020-05-26 | Mitsubishi Electric Corporation | Method for manufacturing semiconductor device |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010062524A (ja) * | 2008-06-02 | 2010-03-18 | Fuji Electric Systems Co Ltd | 炭化珪素半導体装置の製造方法 |
JP2013232557A (ja) * | 2012-04-27 | 2013-11-14 | National Institute Of Advanced Industrial & Technology | 炭化珪素半導体素子の製造方法 |
JP2014204026A (ja) * | 2013-04-08 | 2014-10-27 | 株式会社デンソー | 炭化珪素半導体装置およびその製造方法 |
WO2015155806A1 (ja) * | 2014-04-09 | 2015-10-15 | 三菱電機株式会社 | 炭化珪素半導体装置の製造方法及び炭化珪素半導体装置 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
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EP2733746B1 (en) * | 2011-09-08 | 2019-05-22 | Fuji Electric Co., Ltd. | Method for manufacturing a semiconductor device |
GB201303575D0 (en) * | 2013-02-28 | 2013-04-10 | Singapore Volition Pte Ltd | Method for detecting histone modifications in nucleosomes |
JP6107526B2 (ja) * | 2013-08-08 | 2017-04-05 | 富士電機株式会社 | 炭化珪素半導体装置の製造方法 |
-
2016
- 2016-11-28 JP JP2016230502A patent/JP6737987B2/ja active Active
-
2017
- 2017-10-20 US US15/789,273 patent/US20180151364A1/en not_active Abandoned
- 2017-11-24 CN CN201711192049.1A patent/CN108172508A/zh active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010062524A (ja) * | 2008-06-02 | 2010-03-18 | Fuji Electric Systems Co Ltd | 炭化珪素半導体装置の製造方法 |
JP2013232557A (ja) * | 2012-04-27 | 2013-11-14 | National Institute Of Advanced Industrial & Technology | 炭化珪素半導体素子の製造方法 |
JP2014204026A (ja) * | 2013-04-08 | 2014-10-27 | 株式会社デンソー | 炭化珪素半導体装置およびその製造方法 |
WO2015155806A1 (ja) * | 2014-04-09 | 2015-10-15 | 三菱電機株式会社 | 炭化珪素半導体装置の製造方法及び炭化珪素半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
CN108172508A (zh) | 2018-06-15 |
JP6737987B2 (ja) | 2020-08-12 |
US20180151364A1 (en) | 2018-05-31 |
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