JP2014204026A - 炭化珪素半導体装置およびその製造方法 - Google Patents
炭化珪素半導体装置およびその製造方法 Download PDFInfo
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 42
- 239000004065 semiconductor Substances 0.000 title claims abstract description 41
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 40
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 81
- 238000000034 method Methods 0.000 claims abstract description 45
- 238000004381 surface treatment Methods 0.000 claims abstract description 15
- 229910052751 metal Inorganic materials 0.000 claims description 37
- 239000002184 metal Substances 0.000 claims description 37
- 239000010409 thin film Substances 0.000 claims description 24
- 238000000137 annealing Methods 0.000 claims description 9
- 229910052736 halogen Inorganic materials 0.000 claims description 9
- 150000002367 halogens Chemical class 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 238000005224 laser annealing Methods 0.000 claims description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 238000003763 carbonization Methods 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 238000005468 ion implantation Methods 0.000 abstract description 10
- 230000000694 effects Effects 0.000 abstract description 7
- 239000012535 impurity Substances 0.000 abstract description 7
- 238000005245 sintering Methods 0.000 abstract description 5
- 230000002349 favourable effect Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 34
- 210000002381 plasma Anatomy 0.000 description 14
- 150000002500 ions Chemical class 0.000 description 13
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- 239000010408 film Substances 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 229910021332 silicide Inorganic materials 0.000 description 6
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 6
- 229910052750 molybdenum Inorganic materials 0.000 description 5
- 238000005498 polishing Methods 0.000 description 5
- 229910008284 Si—F Inorganic materials 0.000 description 4
- 238000000227 grinding Methods 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 239000002335 surface treatment layer Substances 0.000 description 4
- 239000000460 chlorine Substances 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 241001391944 Commicarpus scandens Species 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02529—Silicon carbide
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/048—Making electrodes
- H01L21/0485—Ohmic electrodes
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
- H01L29/7828—Vertical transistors without inversion channel, e.g. vertical ACCUFETs, normally-on vertical MISFETs
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Abstract
Description
以下、本発明を図に示す実施形態について説明する。図1に、本実施形態に示すSiC半導体装置の製造方法により製造したプレーナ型MOSFET(縦型パワーMOSFET)の断面図を示す。本デバイスは、例えばインバータに適用すると好適なものである。図1に基づいて縦型パワーMOSFETの構造について説明する。
本発明は上記した実施形態に限定されるものではなく、特許請求の範囲に記載した範囲内において適宜変更が可能である。
1a 主表面
1b 裏面
10 ソース電極
11 ドレイン電極
50 レーザ光
110 金属薄膜
111 低抵抗金属層
Claims (7)
- 表面および裏面を有し、単結晶炭化珪素からなる半導体基板(1、2、3a、3b、4a、4b)と、該半導体基板の前記表面もしくは前記裏面に対してオーミック接触させられたオーミック電極(11)とを有する炭化珪素半導体装置であって、
前記半導体基板の前記表面側もしくは前記裏面のうち前記オーミック電極が形成される側の面と前記オーミック電極との界面が、ポーリングの電気陰性度がSiより大きくSiとの結合エネルギーがSi−H結合の結合エネルギーよりも大きな元素で終端させられていることを特徴とする炭化珪素半導体装置。 - 前記半導体基板の前記表面側もしくは前記裏面のうち前記オーミック電極が形成される側の面と前記オーミック電極との界面がハロゲン元素で終端させられていることを特徴とする請求項1に記載の炭化珪素半導体装置。
- 前記ハロゲン元素の濃度が1×1019atom/cm3以上かつ1×1022atom/cm3以下であることを特徴とする請求項2に記載の炭化珪素半導体装置。
- 表面および裏面を有し、単結晶炭化珪素からなる半導体基板(1、2、3a、3b、4a、4b)と、該半導体基板の前記表面もしくは前記裏面に対してオーミック接触させられたオーミック電極(11)とを有する炭化珪素半導体装置の製造方法であって、
前記半導体基板を用意し、当該半導体基板の前記表面側もしくは前記裏面のうち前記オーミック電極が形成される側の面を、ポーリングの電気陰性度がSiより大きくSiとの結合エネルギーがSi−H結合の結合エネルギーよりも大きな元素で終端させる表面処理工程と、
前記表面処理工程の後、前記半導体基板の裏面上に金属薄膜(110)を形成する金属薄膜形成工程と、
前記金属薄膜形成工程の後、前記金属薄膜をアニールすることで前記オーミック電極(11)を形成する工程と、を含むことを特徴とする炭化珪素半導体装置の製造方法。 - 前記表面処理工程では、前記半導体基板の前記表面側もしくは前記裏面のうち前記オーミック電極が形成される側の面を終端させる元素としてハロゲン元素を用いることを特徴とする請求項4に記載の炭化珪素半導体装置の製造方法。
- 前記表面処理工程では、前記半導体基板の前記表面側もしくは前記裏面のうち前記オーミック電極が形成される側の面における前記ハロゲン元素の濃度を1×1019atom/cm3以上かつ1×1022atom/cm3以下とすることを特徴とする請求項5に記載の炭化珪素半導体装置の製造方法。
- 前記オーミック電極(11)を形成する工程では、前記金属薄膜をレーザアニールすることによって前記オーミック電極(11)を形成することを特徴とする請求項4ないし6のいずれか1つに記載の炭化珪素半導体装置の製造方法。
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JP2013080433A JP5920275B2 (ja) | 2013-04-08 | 2013-04-08 | 炭化珪素半導体装置およびその製造方法 |
US14/197,542 US9105558B2 (en) | 2013-04-08 | 2014-03-05 | Silicon carbide semiconductor device and manufacturing method of the same |
DE102014206572.0A DE102014206572B4 (de) | 2013-04-08 | 2014-04-04 | Siliziumcarbidhalbleitervorrichtung und herstellungsverfahren für dieselbe |
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Cited By (2)
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JP2018088462A (ja) * | 2016-11-28 | 2018-06-07 | トヨタ自動車株式会社 | 半導体装置の製造方法 |
JP2019140234A (ja) * | 2018-02-09 | 2019-08-22 | トヨタ自動車株式会社 | 半導体装置 |
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KR20160103786A (ko) * | 2015-02-25 | 2016-09-02 | 앰코 테크놀로지 코리아 주식회사 | 반도체 디바이스 및 그 제조 방법 |
US10811494B2 (en) | 2017-11-07 | 2020-10-20 | Microsemi Corporation | Method and assembly for mitigating short channel effects in silicon carbide MOSFET devices |
DE112018005967T5 (de) | 2017-11-21 | 2020-07-30 | Microsemi Corporation | Verfahren und anordnung für ohmschen kontakt in verdünnten siliciumcarbidvorrichtungen |
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JP2004022878A (ja) * | 2002-06-18 | 2004-01-22 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
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