CN108172508A - 半导体装置的制造方法 - Google Patents
半导体装置的制造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 239000004065 semiconductor Substances 0.000 title claims abstract description 19
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 41
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 41
- 238000000034 method Methods 0.000 claims abstract description 38
- 229910052751 metal Inorganic materials 0.000 claims abstract description 22
- 239000002184 metal Substances 0.000 claims abstract description 22
- 238000010438 heat treatment Methods 0.000 claims abstract description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 abstract description 14
- 229910010271 silicon carbide Inorganic materials 0.000 description 44
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 44
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 40
- 229910052759 nickel Inorganic materials 0.000 description 19
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 12
- 238000005516 engineering process Methods 0.000 description 12
- 229910052750 molybdenum Inorganic materials 0.000 description 12
- 239000011733 molybdenum Substances 0.000 description 12
- 239000000758 substrate Substances 0.000 description 10
- 239000010936 titanium Substances 0.000 description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 7
- 239000010931 gold Substances 0.000 description 7
- 229910052719 titanium Inorganic materials 0.000 description 7
- 230000007547 defect Effects 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- CNEOGBIICRAWOH-UHFFFAOYSA-N methane;molybdenum Chemical compound C.[Mo] CNEOGBIICRAWOH-UHFFFAOYSA-N 0.000 description 2
- PEUPIGGLJVUNEU-UHFFFAOYSA-N nickel silicon Chemical compound [Si].[Ni] PEUPIGGLJVUNEU-UHFFFAOYSA-N 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- QIJNJJZPYXGIQM-UHFFFAOYSA-N 1lambda4,2lambda4-dimolybdacyclopropa-1,2,3-triene Chemical compound [Mo]=C=[Mo] QIJNJJZPYXGIQM-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910001182 Mo alloy Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H01L21/0405—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising semiconducting carbon, e.g. diamond, diamond-like carbon
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- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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Abstract
本发明提供一种半导体装置的制造方法,有效地形成相对于SiC晶片的接触电阻低的硅化物层。一种半导体装置的制造方法,包括:对SiC晶片的表面进行磨削,且在露出于所述表面露出的范围形成具有5nm以上的厚度的破碎层的工序;形成将所述破碎层覆盖的金属层的工序;及通过加热来使所述金属层与所述破碎层反应,由此形成与所述SiC晶片欧姆接触的硅化物层,且被所述金属层覆盖的范围的所述破碎层的至少一部分在其厚度方向整个区域变化为硅化物层的工序。
Description
技术领域
本说明书公开的技术涉及半导体装置的制造方法。
背景技术
专利文献1公开了半导体装置的制造方法。该制造方法具有磨削工序、破碎层除去工序、金属层形成工序及硅化物层形成工序。在磨削工序中,对SiC晶片的表面进行磨削。在对SiC晶片的表面进行磨削时,在SiC晶片的表面附近的半导体层形成结晶缺陷。以下,将由于磨削而结晶缺陷密度上升的半导体层称为破碎层。需要说明的是,在专利文献1中,将破碎层称为加工改性层。在破碎层除去工序中,通过RIE(Reactive Ion Etching)、溅射、湿式蚀刻、干式蚀刻、干抛光、CMP(Chemical Mechanical Polishing)等来除去破碎层。在金属层形成工序中,在除去了破碎层的SiC晶片的表面形成金属层。在硅化物层形成工序中,通过加热而使金属层与SiC晶片反应,由此形成与SiC晶片欧姆接触的硅化物层。根据该制造方法,能够降低硅化物层与SiC晶片之间的接触电阻。
【现有技术文献】
【专利文献】
【专利文献1】国际公开第2012/049792号
发明内容
【发明要解决的课题】
在专利文献1的制造方法中,在除去了破碎层之后实施金属层形成工序和硅化物层形成工序,由此实现硅化物层相对于SiC晶片的接触电阻的降低。然而,在该制造方法中,由于需要除去破碎层,因此存在为了形成硅化物层所需的工序数多的问题。在本说明书中,提供一种能够更有效地形成相对于SiC晶片的接触电阻低的硅化物层的技术。
【用于解决课题的手段】
本说明书公开的半导体装置的制造方法具有磨削工序、金属层形成工序以及硅化物层形成工序。在所述磨削工序中,对SiC晶片的表面进行磨削。在所述磨削工序中,在露出于所述表面的范围形成具有5nm以上的厚度的破碎层。在所述金属层形成工序中,形成将所述破碎层覆盖的金属层。在所述硅化物层形成工序中,通过加热来使所述金属层与所述破碎层反应,由此形成与所述SiC晶片欧姆接触的硅化物层。在所述硅化物层形成工序中,被所述金属层覆盖的范围的所述破碎层的至少一部分在其厚度方向整个区域变化为硅化物层。
需要说明的是,上述的破碎层是指SiC晶片具有的半导体层中的通过磨削而结晶缺陷密度上升的半导体层。破碎层形成于在SiC晶片的被磨削的表面露出的范围。
另外,上述的磨削工序是指对半导体晶片的表面进行磨削的工序,且形成具有5nm以上的厚度的破碎层的工序。例如,通过磨粒等对半导体晶片的表面进行机械切削的工序是磨削工序的一种。而且,也存在CMP等那样几乎不产生破碎层的磨削加工。在这种磨削加工中,由于破碎层的厚度小于5nm,因此这种磨削加工不是本说明书中所说的磨削工序。
另外,上述的硅化物层是包含金属层与破碎层反应而生成的硅化物的层。
在上述的制造方法中,在磨削工序之后,不除去破碎层,而在破碎层的表面形成金属层。然后,通过加热使金属层与破碎层反应,由此形成与SiC晶片欧姆接触的硅化物层。此时,通过调整加热条件(温度、时间等),使由金属层覆盖的范围的破碎层的至少一部分在其厚度方向整个区域变化为硅化物层。因此,在至少一部分的范围内,在硅化物层与SiC晶片的界面不存在破碎层,硅化物层相对于SiC晶片的接触电阻降低。如以上说明所述,根据该制造方法,在金属层形成工序前不实施破碎层除去工序,能够有效地形成相对于SiC晶片的接触电阻低的硅化物层。
附图说明
图1是SBD10的剖视图。
图2是欧姆电极30的放大剖视图。
图3是SBD10的制造工序的说明图。
图4是SBD10的制造工序的说明图。
图5是SBD10的制造工序的说明图。
【符号说明】
10:肖特基势垒二极管
12:SiC晶片
14:n型低浓度层
16:n型高浓度层
20:肖特基电极
30:欧姆电极
32:硅化物层
34:钛层
36:镍层
38:金层
40:破碎层
42:钼层
44:镍层
具体实施方式
图1示出通过实施方式的制造方法制造的肖特基势垒二极管10(以下,称为SBD10)。SBD10具有SiC基板12、肖特基电极20及欧姆电极30。SiC基板12是以SiC(碳化硅)为主成分的半导体基板。SiC基板12具有n型低浓度层14和n型高浓度层16。n型低浓度层14设置在SiC基板12的上表面12a侧。n型高浓度层16设置在SiC基板12的下表面12b侧。肖特基电极20配置于SiC基板12的上表面12a,与n型低浓度层14肖特基接触。欧姆电极30配置于SiC基板12的下表面12b,与n型高浓度层16进行欧姆接触。
图2示出欧姆电极30的详细构造。如图2所示,欧姆电极30具有硅化物层32、钛层34、镍层36及金层38。硅化物层32是以镍硅化物(NiSi)和碳化钼(MoC)的合金为主成分的层。硅化物层32设置于SiC基板12的下表面12b,与n型高浓度层16欧姆接触。钛层34是以钛(Ti)为主成分的层。钛层34与硅化物层32的下表面相接。镍层36是以镍(Ni)为主成分的层。镍层36与钛层34的下表面相接。金层38是以金(Au)为主成分的层。金层38与镍层36的下表面相接。
对于SBD10的制造方法进行说明。首先,准备具有n型低浓度层14和n型高浓度层16的SiC晶片12(相当于上述的SiC基板12的晶片)。接下来,在SiC晶片12的上表面12a侧形成肖特基电极20、其他的半导体层、绝缘层以及电极等(图示省略)。
接下来,对SiC晶片12的下表面12b(n型高浓度层16露出的表面)进行磨削,由此使SiC晶片12薄板化。如图3所示,以使n型高浓度层16残存的方式对SiC晶片12的下表面12b进行磨削。通过磨削,在向SiC晶片12的下表面12b露出的范围的半导体层(n型高浓度层16的一部分)形成有破碎层40。破碎层40是通过磨削而结晶缺陷密度上升的半导体层。在此,形成厚度为5nm以上的破碎层40。在大多数的情况下,通过磨削工序形成的破碎层40的厚度为50nm以上。而且,破碎层40的厚度优选为500nm以下。
接下来,如图4所示,形成将SiC晶片12的下表面12b(即,破碎层40的表面)覆盖的钼层42。钼层42是以钼(Mo)为主成分的金属层。此外,形成将钼层42的下表面覆盖的镍层44。镍层44是以镍(Ni)为主成分的金属层。
接下来,向镍层44的下表面照射激光,由此对镍层44、钼层42及n型高浓度层16进行加热。通过加热,在镍层44、钼层42及n型高浓度层16之间材料相互扩散。尤其是破碎层40的结晶缺陷密度高,因此能促进向破碎层40中的镍及钼的扩散。镍层44中的镍与n型高浓度层16(即,SiC层)中的硅(Si)发生反应而生成镍硅化物(NiSi)。而且,钼层42中的钼与n型高浓度层16中的碳(C)发生反应而生成碳化钼(MoC)。其结果是,如图5所示,形成由镍硅化物与碳化钼的合金构成的硅化物层32。硅化物层32与n型高浓度层16(即,SiC晶片12)欧姆接触。在此,通过调整加热温度和加热时间,使破碎层40在其厚度方向整体变化为硅化物层32。由此,使破碎层40消灭。例如,在破碎层40的厚度为225nm以下时,以1200℃以上的温度进行150nsec以上的热处理,由此能够使破碎层40在其厚度方向整体上变化为硅化物层32。由于使破碎层40在其厚度方向整体上变化为硅化物层32,因此形成的硅化物层32与不是破碎层40的n型高浓度层16(结晶缺陷密度低的n型高浓度层16)接触。由于在硅化物层32与n型高浓度层16的界面不存在破碎层40,因此硅化物层32相对于n型高浓度层16的接触电阻小。
接下来,如图2所示,在硅化物层32的下表面层叠钛层34、镍层36及金层38。然后,对SiC晶片12进行切割,由此多个SBD10完成。
如以上说明所述,在本说明书公开的制造方法中,在形成钼层42及镍层44之前不除去破碎层40,能够形成以低电阻与SiC晶片12欧姆接触的硅化物层32。由于不实施除去破碎层40的工序,因此能够削减为了形成硅化物层32所需的工序数。因此,根据该制造方法,能够有效地制造SBD10。
另外,如果如上述的专利文献1那样实施除去破碎层的工序,则在除去破碎层的工序期间有时会向SiC晶片施加损害。相对于此,在本说明书公开的技术中,由于未除去破碎层40,因此能够减轻对于SiC晶片12的损害。因此,能够抑制SiC晶片12的缺欠等。
另外,在本说明书公开的制造方法中,在存在破碎层40的状态下实施硅化物化用的热处理,因此在镍层44、钼层42及n型高浓度层16之间容易产生硅化物化反应。因此,热处理工序的吞吐量提高,能够更有效地制造SBD10。
需要说明的是,可以仅在下表面12b的一部分的范围内使破碎层40在其厚度方向整体变化为硅化物层32。通过该结构,也能够降低硅化物层32的接触电阻。
需要说明的是,在上述的实施方式中说明了SBD10的制造方法,但是本说明书公开的制造方法也可以适用于具有与SiC晶片欧姆接触的电极的其他的半导体装置的制造。
以上,详细地说明了实施方式,但是这些只不过是例示,没有对权利要求书进行限定。权利要求书记载的技术包括对以上例示的具体例进行了各种变形、变更的技术。本说明书或附图说明的技术要素单独地或者通过各种组合来发挥技术有用性,没有限定为申请时权利要求记载的组合。而且,本说明书或附图例示的技术是同时实现多个目的的技术,实现其中的1个目的的技术自身具有技术有用性。
Claims (1)
1.一种半导体装置的制造方法,包括:
对SiC晶片的表面进行磨削,且在露出于所述表面的范围形成具有5nm以上的厚度的破碎层的工序;
形成将所述破碎层覆盖的金属层的工序;及
通过加热来使所述金属层与所述破碎层反应,由此形成与所述SiC晶片欧姆接触的硅化物层,且被所述金属层覆盖的范围的所述破碎层的至少一部分在其厚度方向整个区域变化为硅化物层的工序。
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