JP2018050065A - GaN単結晶材料の研磨加工方法 - Google Patents
GaN単結晶材料の研磨加工方法 Download PDFInfo
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- 238000005498 polishing Methods 0.000 title claims abstract description 241
- 238000000034 method Methods 0.000 title claims abstract description 43
- 239000000463 material Substances 0.000 title claims abstract description 26
- 229910002601 GaN Inorganic materials 0.000 title abstract description 28
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title abstract description 9
- 239000007788 liquid Substances 0.000 claims abstract description 47
- 239000013078 crystal Substances 0.000 claims abstract description 37
- 230000001590 oxidative effect Effects 0.000 claims abstract description 12
- 239000006061 abrasive grain Substances 0.000 claims description 51
- 230000033116 oxidation-reduction process Effects 0.000 claims description 25
- 239000012286 potassium permanganate Substances 0.000 claims description 5
- FGRVOLIFQGXPCT-UHFFFAOYSA-L dipotassium;dioxido-oxo-sulfanylidene-$l^{6}-sulfane Chemical compound [K+].[K+].[O-]S([O-])(=O)=S FGRVOLIFQGXPCT-UHFFFAOYSA-L 0.000 claims description 4
- 239000002002 slurry Substances 0.000 claims description 4
- 229920005749 polyurethane resin Polymers 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims 2
- 238000007254 oxidation reaction Methods 0.000 claims 2
- 239000000758 substrate Substances 0.000 abstract description 15
- 230000003746 surface roughness Effects 0.000 abstract description 15
- 230000008569 process Effects 0.000 abstract description 4
- 229920005989 resin Polymers 0.000 description 19
- 239000011347 resin Substances 0.000 description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 18
- 239000000377 silicon dioxide Substances 0.000 description 8
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 7
- 238000012545 processing Methods 0.000 description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- 238000007517 polishing process Methods 0.000 description 6
- 229910003460 diamond Inorganic materials 0.000 description 5
- 239000010432 diamond Substances 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 239000011148 porous material Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052580 B4C Inorganic materials 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000006260 foam Substances 0.000 description 2
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 2
- 230000020477 pH reduction Effects 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920002635 polyurethane Polymers 0.000 description 2
- 239000004814 polyurethane Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 239000005046 Chlorosilane Substances 0.000 description 1
- 229920012266 Poly(ether sulfone) PES Polymers 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- AYJRCSIUFZENHW-DEQYMQKBSA-L barium(2+);oxomethanediolate Chemical compound [Ba+2].[O-][14C]([O-])=O AYJRCSIUFZENHW-DEQYMQKBSA-L 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- -1 for example Substances 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 229910021485 fumed silica Inorganic materials 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
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Abstract
Description
Ehmin(mV)=−33.9pH+750 ・・・(1)
Ehmax(mV)=−82.1pH+1491 ・・・(2)
Ehmin(mV)=−33.9pH+750 ・・・(1)
Ehmax(mV)=−82.1pH+1491 ・・・(2)
以下、本発明者等が行った実験例1を説明する。先ず、図1に示す研磨加工装置10と同様に構成された装置を用い、以下に示す遊離砥粒研磨条件にて、硬質ポリウレタンから成る研磨砥粒遊離型研磨パッドと研磨砥粒とを用いるとともに、酸化還元電位については過マンガン酸カリウムおよびチオ硫酸カリウムを用い、pHについては硫酸と水酸化カリウムを用いて、pHおよび酸化還元電位Ehが相互に異なるように調整され、且つ研磨砥粒が12.5重量%となるように分散された14種類の酸化性の研磨液について、10mm×10mm×0.35mmのGaN単結晶板である試料1〜試料14の研磨試験をそれぞれ行った。
研磨加工装置 :エンギスハイプレス EJW−380
研磨パッド :硬質発泡ポリウレタン製 300mmφ×2mmt(ニッタハース社製のIC1000)
研磨パッド回転数 :60rpm
被研磨体(試料) :GaN単結晶板(0001)
被研磨体の形状 :10mm×10mm×0.35mmの板が3個
被研磨体回転数 :60rpm
研磨荷重(圧力) :52.2kPa
研磨液供給量 :10ml/min
研磨時間 :120min
コンディショナー :SD#325(電着ダイヤモンドホイール)
Ehmin(mV)=−33.9pH+750 ・・・(1)
Ehmax(mV)=−82.1pH+1491 ・・・(2)
以下、本発明者等が行った実験例2を説明する。先ず、図1に示す研磨加工装置10と同様に構成された装置を用い、以下に示す固定砥粒研磨条件にて、砥粒内包研磨パッドを用いるとともに、酸化還元電位については過マンガン酸カリウムおよびチオ硫酸カリウムを用い、pHについては硫酸と水酸化カリウムを用いて、pHおよび酸化還元電位Ehが異なるように調整された16種類の酸化性の研磨液について、10mm×10mm×0.35mmのGaN単結晶板である試料15〜試料30の研磨試験をそれぞれ行った。この研磨加工において、各試料15〜試料30に用いられる砥粒内包研磨パッドは、独立気孔を有する母材樹脂と、その母材樹脂に一部が固着し或いは一部が母材樹脂から分離した状態でその独立気孔内に収容された研磨砥粒とを有するものであり、たとえばシリカ(ρ=2.20)或いはアルミナ(ρ=3.98)が10体積%、母材樹脂としてのエポキシ樹脂(ρ=1.15)が55体積%、独立気孔が35体積%から構成されている。また、試料31〜32に用いられる砥粒内包研磨パッドは、連通気孔を有する母材樹脂と、その母材樹脂内に収容された研磨砥粒とを有するものであり、たとえばシリカ(ρ=2.20)が32体積%、母材樹脂としてのポリエーテルサルホン(PES)樹脂(ρ=1.35)が33体積%、連通気孔が35体積%から構成されている。砥粒内包研磨パッドは、たとえば500×500×2mmのシート状に成形し、300mmφの円形に切り出されたものである。
研磨加工装置 :エンギスハイプレス EJW−380
研磨パッド :砥粒内包パッド 300mmφ×2mmt
研磨パッド回転数 :60rpm
被研磨体(試料) :GaN単結晶板(0001)
被研磨体の形状 :10mm×10mm×0.35mmの板が3個
被研磨体回転数 :60rpm
研磨荷重(圧力) :52.2kPa
研磨液供給量 :10ml/min
研磨時間 :120min
コンディショナー :SD#325(電着ダイヤモンドホイール)
Ehmin(mV)=−27.2pH+738.4 ・・・(3)
Ehmax(mV)=−84pH+1481 ・・・(4)
12:研磨定盤
14:研磨パッド(研磨砥粒遊離型研磨パッド、研磨砥粒固定型研磨パッド)
16:被研磨体(GaN単結晶基板)
20:研磨液
26:研磨砥粒
30:連通気孔
32:母材樹脂
Claims (4)
- 研磨液および複数の研磨砥粒の存在下において研磨砥粒遊離型研磨パッドを用いて結晶材料の表面を平滑に研磨するためのCMP法による研磨加工方法であって、
前記結晶材料は、GaNの単結晶であり、
前記研磨液は、酸化還元電位がEhmin(式(1)で定められる値)mV〜Ehmax(式(2)で定められる値)mVであり、且つpHが0.1〜0.8である酸化性の研磨液であることを特徴とする研磨加工方法。
Ehmin(mV)=−33.9pH+750 ・・・(1)
Ehmax(mV)=−82.1pH+1491 ・・・(2) - 研磨液および複数の研磨砥粒の存在下において研磨砥粒遊離型研磨パッドを用いて結晶材料の表面を平滑に研磨するためのCMP法による研磨加工方法であって、
前記結晶材料は、GaNの単結晶であり、
前記研磨液は、酸化還元電位がEhmin(式(1)で定められる値)mV〜Ehmax(式(2)で定められる値)mVであり、且つpHが6.3〜6.5である酸化性の研磨液であることを特徴とする研磨加工方法。
Ehmin(mV)=−33.9pH+750 ・・・(1)
Ehmax(mV)=−82.1pH+1491 ・・・(2) - 前記酸化性の研磨液は、過マンガン酸カリウムまたはチオ硫酸カリウムを酸化還元電位調整剤として添加されたものである請求項1または2の研磨加工方法。
- 前記研磨砥粒遊離型研磨パッドは、硬質発泡ポリウレタン樹脂製であり、
前記研磨砥粒は、該研磨パッドに供給される研磨液に含まれる遊離砥粒である
ことを特徴とする請求項1または2の研磨加工方法。
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