JP6243009B2 - GaN単結晶材料の研磨加工方法 - Google Patents
GaN単結晶材料の研磨加工方法 Download PDFInfo
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- 229910002601 GaN Inorganic materials 0.000 description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 18
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 7
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- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 239000005046 Chlorosilane Substances 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
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- 230000008901 benefit Effects 0.000 description 1
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical class Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
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- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
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- B24—GRINDING; POLISHING
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
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- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
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Description
Ehmin(mV)=−27.2pH+738.4 ・・・(3)
Ehmax(mV)=−84.0pH+1481 ・・・(4)
以下、本発明者等が行った実験例1を説明する。先ず、図1に示す研磨加工装置10と同様に構成された装置を用い、以下に示す遊離砥粒研磨条件にて、硬質ポリウレタンから成る研磨砥粒遊離型研磨パッドと研磨砥粒とを用いるとともに、酸化還元電位については過マンガン酸カリウムおよびチオ硫酸カリウムを用い、pHについては硫酸と水酸化カリウムを用いて、pHおよび酸化還元電位Ehが相互に異なるように調整され、且つ研磨砥粒が12.5重量%となるように分散された14種類の酸化性の研磨液について、10mm×10mm×0.35mmのGaN単結晶板である試料1〜試料14の研磨試験をそれぞれ行った。
研磨加工装置 :エンギスハイプレス EJW−380
研磨パッド :硬質発泡ポリウレタン製 300mmφ×2mmt(ニッタハース社製のIC1000)
研磨パッド回転数 :60rpm
被研磨体(試料) :GaN単結晶板(0001)
被研磨体の形状 :10mm×10mm×0.35mmの板が3個
被研磨体回転数 :60rpm
研磨荷重(圧力) :52.2kPa
研磨液供給量 :10ml/min
研磨時間 :120min
コンディショナー :SD#325(電着ダイヤモンドホイール)
Ehmin(mV)=−33.9pH+750 ・・・(1)
Ehmax(mV)=−82.1pH+1491 ・・・(2)
以下、本発明者等が行った実験例2を説明する。先ず、図1に示す研磨加工装置10と同様に構成された装置を用い、以下に示す固定砥粒研磨条件にて、砥粒内包研磨パッドを用いるとともに、酸化還元電位については過マンガン酸カリウムおよびチオ硫酸カリウムを用い、pHについては硫酸と水酸化カリウムを用いて、pHおよび酸化還元電位Ehが異なるように調整された16種類の酸化性の研磨液について、10mm×10mm×0.35mmのGaN単結晶板である試料15〜試料30の研磨試験をそれぞれ行った。この研磨加工において、各試料15〜試料30に用いられる砥粒内包研磨パッドは、独立気孔を有する母材樹脂と、その母材樹脂に一部が固着し或いは一部が母材樹脂から分離した状態でその独立気孔内に収容された研磨砥粒とを有するものであり、たとえばシリカ(ρ=2.20)或いはアルミナ(ρ=3.98)が10体積%、母材樹脂としてのエポキシ樹脂(ρ=1.15)が55体積%、独立気孔が35体積%から構成されている。また、試料31〜32に用いられる砥粒内包研磨パッドは、連通気孔を有する母材樹脂と、その母材樹脂内に収容された研磨砥粒とを有するものであり、たとえばシリカ(ρ=2.20)が32体積%、母材樹脂としてのポリエーテルサルホン(PES)樹脂(ρ=1.35)が33体積%、連通気孔が35体積%から構成されている。砥粒内包研磨パッドは、たとえば500×500×2mmのシート状に成形し、300mmφの円形に切り出されたものである。
研磨加工装置 :エンギスハイプレス EJW−380
研磨パッド :砥粒内包パッド 300mmφ×2mmt
研磨パッド回転数 :60rpm
被研磨体(試料) :GaN単結晶板(0001)
被研磨体の形状 :10mm×10mm×0.35mmの板が3個
被研磨体回転数 :60rpm
研磨荷重(圧力) :52.2kPa
研磨液供給量 :10ml/min
研磨時間 :120min
コンディショナー :SD#325(電着ダイヤモンドホイール)
Ehmin(mV)=−27.2pH+738.4 ・・・(3)
Ehmax(mV)=−84pH+1481 ・・・(4)
12:研磨定盤
14:研磨パッド(研磨砥粒遊離型研磨パッド、研磨砥粒固定型研磨パッド)
16:被研磨体(GaN単結晶基板)
20:研磨液
26:研磨砥粒
30:連通気孔
32:母材樹脂
Claims (3)
- 研磨液および複数の研磨砥粒の存在下において研磨砥粒固定型研磨パッドを用いて結晶材料の表面を平滑に研磨するためのCMP法による研磨加工方法であって、
前記結晶材料は、GaNの単結晶であり、
前記研磨液は、酸化還元電位がEhmin(式(3)で定められる値)mV〜Ehmax(式(4)で定められる値)mVであり、且つpHが0.12〜5.7である酸化性の研磨液であることを特徴とする研磨加工方法。
Ehmin(mV)=−27.2pH+738.4 ・・・(3)
Ehmax(mV)=−84pH+1481 ・・・(4) - 前記研磨砥粒固定型研磨パッドは、独立気孔または連通気孔を有する母材樹脂を有し、
前記複数の研磨砥粒は、前記母材樹脂に形成された独立気孔または連通気孔内に一部が固着し或いは一部が該母材樹脂から分離した状態で該母材樹脂内に収容されている
ことを特徴とする請求項1の研磨加工方法。 - 前記研磨砥粒固定型研磨パッドの母剤樹脂は、エポキシ樹脂またはポリエーテルサルホン(PES)樹脂から構成されたものである
ことを特徴とする請求項1の研磨加工方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014074202 | 2014-03-31 | ||
JP2014074202 | 2014-03-31 | ||
PCT/JP2015/059526 WO2015152021A1 (ja) | 2014-03-31 | 2015-03-26 | GaN単結晶材料の研磨加工方法 |
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JP2017215116A Division JP6420939B2 (ja) | 2014-03-31 | 2017-11-07 | GaN単結晶材料の研磨加工方法 |
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US7354287B1 (en) * | 2006-10-31 | 2008-04-08 | Caterpillar Inc. | Shorting connector |
US20090317638A1 (en) * | 2007-02-20 | 2009-12-24 | Sumitomo Electric Industries, Ltd. | Polishing slurry, method for manufacturing the polishing slurry, nitride crystalline material and method for plishing surface of the nitride crystalline material |
US8383003B2 (en) * | 2008-06-20 | 2013-02-26 | Nexplanar Corporation | Polishing systems |
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US20160257854A1 (en) * | 2013-10-22 | 2016-09-08 | Noritake Co., Limited | Polishing composition and polishing processing method using same |
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