JP2018014456A - 半導体装置、電源回路、コンピュータ、及び半導体装置の製造方法 - Google Patents
半導体装置、電源回路、コンピュータ、及び半導体装置の製造方法 Download PDFInfo
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Abstract
【解決手段】半導体装置100は、窒化物半導体層16と、窒化物半導体層16の上の絶縁層22と、窒化物半導体層16内に位置する第1の領域16aと、窒化物半導体層16内の第1の領域16aと絶縁層22との間に位置し、第1の領域16aよりも電気抵抗率の大きい第2の領域16bと、を備える。
【選択図】図1
Description
本実施形態の半導体装置は、窒化物半導体層と、窒化物半導体層の上の絶縁層と、窒化物半導体層内に位置する第1の領域と、窒化物半導体層内の第1の領域と絶縁層との間に位置し、第1の領域よりも電気抵抗率の大きい第2の領域と、を備える。
本実施形態の半導体装置の製造方法は、熱処理の後、第1の絶縁層を剥離し、窒化物半導体層上に第2の絶縁層を形成する点以外は、第1の実施形態と同様である。したがって、第1の実施形態と重複する内容については記述を省略する。
本実施形態の半導体装置は、p型層が窒化物半導体層に接すること以外は、第1の実施形態と同様である。したがって、第1の実施形態と重複する内容については記述を省略する。
本実施形態の半導体装置は、ゲート電極が窒化物半導体層に接すること以外は、第1の実施形態と同様である。したがって、第1の実施形態と重複する内容については記述を省略する。
本実施形態の半導体装置は、バリア層に形成された溝(リセス)内にゲート電極が埋め込まれる、いわゆるゲート・リセス構造を備えること以外は、第1の実施形態と同様である。したがって、第1の実施形態と重複する内容については記述を省略する。
また、ゲート・リセス構造を備えることにより、ノーマリーオフトランジスタの実現が容易となる。
本実施形態の半導体装置は、溝(リセス)下にバリア層が存在する点で、第5の実施形態と異なっている。以下、第5の実施形態と重複する内容については記述を省略する。
本実施形態の電源回路及びコンピュータは、HEMTを有する。
16 バリア層(窒化物半導体層、第2の半導体領域)
16a 低抵抗領域(第1の領域)
16b 高抵抗領域(第2の領域、領域)
21 絶縁層(第1の絶縁層)
22 絶縁層(第1の絶縁層、第2の絶縁層)
42 電源回路
100 HEMT(半導体装置)
200 HEMT(半導体装置)
300 HEMT(半導体装置)
400 HEMT(半導体装置)
500 HEMT(半導体装置)
600 コンピュータ
Claims (20)
- 窒化物半導体層と、
前記窒化物半導体層の上の絶縁層と、
前記窒化物半導体層内に位置する第1の領域と、
前記窒化物半導体層内の前記第1の領域と前記絶縁層との間に位置し、前記第1の領域よりも電気抵抗率の大きい第2の領域と、
を備える半導体装置。 - 前記窒化物半導体層が、第1の半導体領域と前記第1の半導体領域よりもバンドギャップの大きい第2の半導体領域を有し、
前記第1の領域及び前記第2の領域が前記2の半導体領域内に位置する請求項1記載の半導体装置。 - 前記第1の半導体領域が窒化ガリウムであり、前記第2の半導体領域が窒化アルミニウムガリウムである請求項2記載の半導体装置。
- 前記第2の領域に、窒素原子の格子位置に存在する2個の酸素原子を有する請求項1乃至請求項3いずれか一項記載の半導体装置。
- 前記絶縁層が酸化シリコンを含む請求項1乃至請求項4いずれか一項記載の半導体装置。
- 前記窒化物半導体層がガリウム(Ga)を含む請求項1乃至請求項5いずれか一項記載の半導体装置。
- 前記窒化物半導体層に接する第1の電極と、
前記窒化物半導体層に接する第2の電極と、
前記第1の電極と前記第2の電極との間に位置し、前記窒化物半導体層との間に前記絶縁層を挟むゲート電極と、を更に備える請求項1乃至請求項6いずれか一項記載の半導体装置。 - 窒化物半導体層と、
前記窒化物半導体層の上の絶縁層と、
前記窒化物半導体層内の前記絶縁層の側に位置し、窒素原子の格子位置に存在する2個の酸素原子を有する領域と、
を備える半導体装置。 - 前記窒化物半導体層の結晶構造を構成する窒素原子以外の原子を原子Xとした場合に、前記領域中に、酸素原子と結合するボンドと、ダングリングボンドとを有する原子Xが存在する請求項8記載の半導体装置。
- 前記窒化物半導体層を構成する窒素原子以外の原子を原子Xとした場合に、前記領域中に、酸素原子と結合する2つのボンドを有する原子Xが存在する請求項8又は請求項9記載の半導体装置。
- 前記原子Xと結合する酸素原子が、前記2個の酸素原子のいずれか一方である請求項9又は請求項10記載の半導体装置。
- 前記原子Xがガリウム(Ga)原子又はアルミニウム(Al)原子である請求項9乃至請求項11いずれか一項記載の半導体装置。
- 前記2個の酸素原子のいずれか一方と結合するシリコン(Si)原子、ゲルマニウム(Ge)原子、チタン(Ti)原子、ジルコニウム(Zr)原子、ハフニウム(Hf)原子、又は、鉄(Fe)原子を有する請求項8記載の半導体装置。
- 請求項1乃至請求項13いずれか一項記載の半導体装置を備える電源回路。
- 請求項1乃至請求項13いずれか一項記載の半導体装置を備えるコンピュータ。
- 窒化物半導体層の上に第1の絶縁層を形成し、
酸素を含有する雰囲気中、前記窒化物半導体層の酸化量が1nm以下となる条件で熱処理を行い、
前記窒化物半導体層に酸素を含む領域を形成する半導体装置の製造方法。 - 前記熱処理の温度は、400℃以上1050℃以下である請求項16記載の半導体装置の製造方法。
- 前記熱処理の後、前記第1の絶縁層を剥離し、
前記窒化物半導体層の上に第2の絶縁層を形成する請求項16又は請求項17記載の半導体装置の製造方法。 - 前記熱処理により、前記窒化物半導体層の窒素原子の格子位置に2個の酸素原子を導入する請求項16乃至請求項18いずれか一項記載の半導体装置の製造方法。
- 前記雰囲気中に酸素分子が含まれる請求項16乃至請求項19いずれか一項記載の半導体装置の製造方法。
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