TWI625787B - 選擇成長方法及基板處理裝置 - Google Patents
選擇成長方法及基板處理裝置 Download PDFInfo
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- TWI625787B TWI625787B TW104135017A TW104135017A TWI625787B TW I625787 B TWI625787 B TW I625787B TW 104135017 A TW104135017 A TW 104135017A TW 104135017 A TW104135017 A TW 104135017A TW I625787 B TWI625787 B TW I625787B
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- 238000000034 method Methods 0.000 title claims abstract description 58
- 239000000758 substrate Substances 0.000 title claims abstract description 44
- 238000012545 processing Methods 0.000 title claims description 120
- 239000010408 film Substances 0.000 claims abstract description 208
- 229910052751 metal Inorganic materials 0.000 claims abstract description 38
- 239000002184 metal Substances 0.000 claims abstract description 38
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 21
- 238000002485 combustion reaction Methods 0.000 claims abstract description 21
- 230000008569 process Effects 0.000 claims abstract description 15
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 12
- 239000010409 thin film Substances 0.000 claims abstract description 10
- 239000003054 catalyst Substances 0.000 claims abstract description 9
- 239000007789 gas Substances 0.000 claims description 115
- 229910052799 carbon Inorganic materials 0.000 claims description 54
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 52
- 229910052721 tungsten Inorganic materials 0.000 claims description 37
- 230000007246 mechanism Effects 0.000 claims description 24
- 229910052736 halogen Inorganic materials 0.000 claims description 20
- 150000002367 halogens Chemical class 0.000 claims description 20
- 229910052710 silicon Inorganic materials 0.000 claims description 19
- 229930195733 hydrocarbon Natural products 0.000 claims description 18
- 150000002430 hydrocarbons Chemical class 0.000 claims description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 17
- 239000010703 silicon Substances 0.000 claims description 17
- 239000004215 Carbon black (E152) Substances 0.000 claims description 15
- 238000010438 heat treatment Methods 0.000 claims description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 9
- 150000008282 halocarbons Chemical class 0.000 claims description 9
- 239000001301 oxygen Substances 0.000 claims description 9
- 229910052760 oxygen Inorganic materials 0.000 claims description 9
- 229910052707 ruthenium Inorganic materials 0.000 claims description 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 3
- 229910052801 chlorine Inorganic materials 0.000 claims description 3
- 238000000354 decomposition reaction Methods 0.000 claims description 3
- 238000001179 sorption measurement Methods 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 229910052735 hafnium Inorganic materials 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- 238000009413 insulation Methods 0.000 claims description 2
- 229910052740 iodine Inorganic materials 0.000 claims description 2
- 229910052741 iridium Inorganic materials 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 229910052748 manganese Inorganic materials 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052758 niobium Inorganic materials 0.000 claims description 2
- 229910052762 osmium Inorganic materials 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 239000002994 raw material Substances 0.000 claims description 2
- 229910052702 rhenium Inorganic materials 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- 229910052718 tin Inorganic materials 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 229910052720 vanadium Inorganic materials 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 229910052713 technetium Inorganic materials 0.000 claims 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 36
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 36
- 239000010937 tungsten Substances 0.000 description 36
- 239000000460 chlorine Substances 0.000 description 18
- 235000012431 wafers Nutrition 0.000 description 15
- 238000006243 chemical reaction Methods 0.000 description 13
- 239000006185 dispersion Substances 0.000 description 11
- 239000011261 inert gas Substances 0.000 description 10
- 239000010953 base metal Substances 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 235000012239 silicon dioxide Nutrition 0.000 description 7
- 230000008901 benefit Effects 0.000 description 6
- 239000010453 quartz Substances 0.000 description 5
- 229910003481 amorphous carbon Inorganic materials 0.000 description 4
- 229910017052 cobalt Inorganic materials 0.000 description 4
- 239000010941 cobalt Substances 0.000 description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 3
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 239000011553 magnetic fluid Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 239000007800 oxidant agent Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- -1 bis (dimethylamine) silane Chemical compound 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
- C30B25/165—Controlling or regulating the flow of the reactive gases
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02115—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material being carbon, e.g. alpha-C, diamond or hydrogen doped carbon
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02304—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment formation of intermediate layers, e.g. buffer layers, layers to improve adhesion, lattice match or diffusion barriers
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
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- H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28568—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising transition metals
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Abstract
本發明為一種選擇成長方法,其係使薄膜選擇性成長於絕緣膜及金屬膜露出之基底上,並包含下列製程:(1)將該基底之金屬用於觸媒,使可藉燃燒減薄之膜選擇性成長於該基底之金屬膜上;(2)一面使該可藉燃燒減薄之膜燃燒,一 面使矽氧化物膜選擇性成長於該基底之絕緣膜上。
Description
[相關提申文獻]
此揭示是依據2014年10月29日提申之日本專利申請案第2014-220157號之優先權的利益,將該日本申請案之所有內容作為參照文獻而納入此處。
此發明係有關於一種選擇成長方法及基板處理裝置。
使薄膜選擇性成長於基底上之選擇成長方法已知有利用基底結晶面之面方位的單晶之同質磊晶成長法、及異質磊晶成長法。舉例而言,已知有使磊晶矽層成長於基底亦即單晶矽膜上之同質磊晶成長法。
又,舉例而言,已知有使矽鍺磊晶層成長於基底亦即單晶矽膜上之異質磊成長法。
然而,目前的同質磊晶成長法或異質磊晶成長法有下列限制:
‧限定選擇成長之基底
‧界面需乾淨化
‧需高溫程序
而有不易適應目前所要求之更細微的半導體裝置構造之情況。
此發明係提供能適應更細微之半導體裝置構造的選擇成長方法、及可實施該選擇成長方法之基板處理裝置。
此發明之第1態樣的選擇成長方法係使薄膜選擇性成長於絕緣膜及金屬膜露出之基底上,並包含下列製程:(1)將該基底之金屬用於觸媒,使可藉燃燒減薄之膜選擇性成長於該基底之金屬膜上;(2)一面使該可藉燃燒減薄之膜燃燒,一面使矽氧化物膜選擇性成長於該基底之絕緣膜上。
此發明之第2態樣的基板處理裝置係使薄膜選擇性成長於被處理體之絕緣膜及金屬膜露出的被處理面上,並包含有處理室、氣體供給機構、加熱裝置、排氣機構及控制器,該處理室收納該被處理體;該氣體供給機構至少將烴氣體、鹵素氣體或鹵化烴氣體、含有矽之氣體、及含有氧之氣體供至該處理室內;該
加熱裝置加熱該處理室內;該排氣機構將該處理室內排氣;該控制器控制該氣體供給機構、該加熱裝置、及該排氣機構;又,該控制器將該氣體供給機構、該加熱裝置、及該排氣機構控制成在該處理室內,對該被處理體實施第1態樣之選擇成長方法。
1‧‧‧矽晶圓(晶圓)
2‧‧‧SiO2膜
3‧‧‧鎢膜
4‧‧‧碳膜
4-1‧‧‧碳膜
5‧‧‧SiO2膜
5-1‧‧‧SiO2膜
6‧‧‧開孔
6’‧‧‧開孔
6”‧‧‧開孔
7‧‧‧鈷膜
8‧‧‧矽膜
9‧‧‧鎢膜
100‧‧‧基板處理裝置
101‧‧‧處理室
102‧‧‧天花板板體
103‧‧‧歧管
104‧‧‧密封構件
105‧‧‧晶舟
106‧‧‧支柱
107‧‧‧保溫筒
108‧‧‧工作台
109‧‧‧蓋部
110‧‧‧旋轉軸
111‧‧‧磁性流體密封件
112‧‧‧密封構件
113‧‧‧臂
114‧‧‧處理氣體供給機構
115‧‧‧惰性氣體供給機構
117a‧‧‧烴氣體供給源
117b‧‧‧鹵素氣體供給源
117c‧‧‧含有矽之氣體供給源
117d‧‧‧含有氧之氣體供給源
120‧‧‧惰性氣體供給源
121a‧‧‧流量控制器
121b‧‧‧流量控制器
121c‧‧‧流量控制器
121d‧‧‧流量控制器
121e‧‧‧流量控制器
122a‧‧‧開關閥
122b‧‧‧開關閥
122c‧‧‧開關閥
122d‧‧‧開關閥
122e‧‧‧開關閥
123a‧‧‧分散噴嘴
123b‧‧‧分散噴嘴
123c‧‧‧分散噴嘴
123d‧‧‧分散噴嘴
124a‧‧‧氣體吐出孔
124b‧‧‧氣體吐出孔
124c‧‧‧氣體吐出孔
124d‧‧‧氣體吐出孔
128‧‧‧噴嘴
129‧‧‧排氣口
130‧‧‧排氣口蓋構件
131‧‧‧氣體出口
132‧‧‧排氣機構
133‧‧‧加熱裝置
150‧‧‧控制器
152‧‧‧記憶部
S1‧‧‧步驟
S2‧‧‧步驟
S3‧‧‧步驟
S4‧‧‧步驟
S5‧‧‧步驟
S6‧‧‧步驟
S7‧‧‧步驟
t‧‧‧膜厚
Ww‧‧‧鎢膜之寬度
WSiO2‧‧‧SiO2膜之寬度
隨附之圖式係納入作為本說明書之一部分來顯示本揭示之實施形態,將本揭示之概念連同上述一般說明及後述實施形態的細節一起說明。
圖1係顯示此發明第1實施形態之選擇成長方法的一例之流程圖。
圖2A~圖2E係概略地顯示圖1所示之順序中的被處理體之狀態的剖面圖。
圖3係顯示處理時間與碳膜之膜厚的關係之圖。
圖4係顯示去除了碳膜之狀態的剖面圖。
圖5係顯示此發明之第2實施形態的選擇成長方法之一例的流程圖。
圖6A至圖6H係概略地顯示圖5所示之順序中的被處理體之狀態的剖面圖。
圖7係顯示去除了碳膜之狀態的剖面圖。
圖8係顯示此發明之第3實施形態的選擇成長方法之一例的流程圖。
圖9A至圖9J係概略地顯示圖8所示之順序中的被處理體之狀態的剖面圖。
圖10係顯示去除了碳膜之狀態的剖面圖。
圖11係概略地顯示此發明之第4實施形態的基板處理裝置之一例的縱剖面圖。
[用以實施發明之形態]
以下,參照圖式,說明此發明之數個實施形態。此外,在所有圖式共同之部分附上共同之參照符號。在下述詳細之說明中,為了可充分理解本揭示,而給予許多具體之細節。然而,在無此種詳細之說明下,該業者可做成本揭示自是理所當然的事。在其他例,為了避免不易理解各種實施形態,眾所皆知之方法、程序、系統及構成要件並未顯示細節。
(第1實施形態)
<選擇成長方法>
圖1係顯示此發明之第1實施形態的選擇成長方法之一例的流程圖,圖2A~圖2E係概略地顯示圖1所示之順序中的被處理體之狀態的剖面圖。
首先,如圖2A所示,準備例如矽晶圓(以下稱為晶圓)1作為被處理體。於晶圓1之表面上形成有絕緣膜構成之構造體及金屬膜構成之構造體。圖2A所示之構造體係仿造半導體積體電路裝置之製造中的構造體,絕緣膜為例如矽氧化物膜,金屬膜為例如鎢膜3。矽氧化物膜之一例為例如SiO2膜2。圖2A顯示了SiO2膜及鎢膜3交互出現之圖形。SiO2膜2及鎢膜3之露出面為晶圓1的被處理面,被處理面作為使薄膜選擇性成長之基底。
接著,如圖1中之步驟S1及圖2B所示,使可藉燃燒減薄之膜選擇性成長於基底之金屬、在本例為鎢膜3上。可藉燃燒減薄之膜為例如碳膜4,碳膜4係將基底之金屬、在本例為鎢用於觸媒,而選擇性成長於鎢膜3上。
圖3係顯示處理時間與碳膜4之膜厚的關係之圖。於圖3顯示了在低溫下將碳膜4形成於SiO2膜2上之情形(△:LT-Carbon on SiO2)的情形及同樣地在低溫下將碳膜4形成於鎢膜3上之情形(●:LT-Carbon on W)。此外,碳膜4之原料氣體使用了烴氣體及鹵素氣體。在本例中,烴氣體使用了丁二烯(C4H6),鹵素氣體使用了氯(Cl2)氣。
如圖3所示,將C4H6氣體及Cl2氣體用於原料氣體,在低溫、例如350℃下於SiO2膜2上形成碳膜4時,於SiO2膜2上開始形成碳膜4之處理時間大約為經過
170~180min後。相對於此,在350℃處理溫度下於鎢膜3上形成碳膜4時,在處理時間大約經過30min之階段,開始於鎢膜3上形成碳膜4。亦即,在如本例之碳成膜處理中,可清楚明白碳膜4在SiO2膜2上之培養時間與同樣地在鎢膜3上的培養時間有約140~150min之大幅差距。
培養時間有大幅差距的理由之一可視為鎢膜3有觸媒作用,而促進C4H6氣體中之C4H6的吸附與Cl2氣體之Cl2分子的分解。
在鎢膜3上,藉以下之反應而沉積非晶碳膜。
C4H6 → C4H5+H‧‧‧(1)
Cl2 → 2Cl‧‧‧(2)
C4H5+Cl → C4H5Cl‧‧‧(3)
C4H5Cl+C4H6 → 非晶碳‧‧‧(4)
相對於此,在SiO2膜2上,藉以下之反應沉積非晶碳膜。
C4H6+Cl2 → C4H5Cl+HCl‧‧‧(5)
C4H5Cl+C4H6 → 非晶碳‧‧‧(6)
在上述反應中,(1)+(2)+(3)之反應遠比(5)之反應快。
((1)+(2)+(3)>>(5))
(4)之反應與(6)之反應相同。
((4)=(6))
亦即,由於(1)+(2)+(3)之反應遠比(5)之反應快,故在SiO2膜2上與鎢膜3上,碳膜4之培養時間產生差距。
因而,如圖2B所示,可使可藉燃燒減薄之膜、例如碳膜4選擇性成長於鎢膜3上。
使此種碳膜4選擇性成長於鎢膜3上之步驟S1的處理條件之一例:
C4H6氣體流量:200sccm
Cl2氣體流量:50sccm
處理時間:30~180min
處理溫度:350℃
處理壓力:800Pa(約6Torr)
此外,從實用的觀點,C4H6氣體流量宜從100~400sccm之範圍選擇,Cl2氣體流量宜從1~100sccm之範圍選擇,處理壓力宜從1~20Torr(133.3Pa~2666Pa)之範圍選擇。
此外,步驟S1之處理時間宜設定為碳膜4在鎢膜3上之培養時間以上、碳膜4在SiO2膜上之培養時間以下。
接著,如圖1中之步驟S2及圖2C~2D所示,一面使可藉燃燒減薄之膜、在本例中為碳膜4燃燒,一面使矽氧化物膜、例如SiO2膜5選擇性成長(沉積)於基底之絕緣膜、在本例為SiO2膜2上。SiO2膜5之原料氣體的一例為胺基矽烷系氣體、例如雙(二甲胺)矽烷(2DMAS),氧化劑氣體之一例為臭氧(O3)。
步驟S2之處理條件的一例:
2DMAS氣體流量:200sccm
O3氣體流量:1000sccm
處理時間:30~180min
處理溫度:350℃
處理壓力:133.3Pa(1Torr)
在步驟S2中,碳膜4藉燃燒使其膜厚漸減,SiO2膜5則藉沉積使其膜厚漸增(參照圖2C~圖2D)。
此外,步驟S2之處理時間宜設定為漸減之碳膜4的膜厚與漸增之SiO2膜5的膜厚大約均衡的時間。
根據具有此種步驟S1、步驟S2之第1實施形態,可使碳膜4及SiO2膜5選擇性成長。因此,如圖2E所示,可獲得「自對準成基底之鎢膜3的圖形之碳膜4」及「同樣自對準成基底之SiO2膜2的圖形之SiO2膜5」。
又,根據第1實施形態,由於使碳膜4及SiO2膜5選擇成長,故不需微影製程。因此,即使鎢膜3之寬度Ww及SiO2膜2之寬度WSiO2兩者皆細微化至微影的解析度界限以下,亦可於鎢膜3及SiO2膜2上分別形成碳膜4及SiO2膜5。
又,使碳膜4及SiO2膜5選擇成長之際的處理溫度為,如350℃般低溫即可。
又,碳膜4亦可如圖4所示予以去除。碳膜4之去除可利用例如SiO2膜5的選擇成長之際所使用的氧化劑氣體。去除碳膜4時,具有可於基底之鎢膜3上獲得「自對準成鎢膜3的圖形之開孔6」的優點。
此外,可如鎢膜3般在金屬膜上選擇性成長,且可藉燃燒減薄之材料可舉釕為例。因此,亦可將碳膜4置換為釕膜。
再者,使碳膜4選擇成長之際所使用的鹵素氣體,除了氯(Cl2)氣外,碘(I2)氣也有效。又,亦可不為鹵素單體,可使用鹵化烴氣體。
如此,根據第1實施形態,可獲得能適應更細微之半導體裝置構造的選擇成長方法。
(第2實施形態)
<另一選擇成長方法>
在第1實施形態中,碳膜4之選擇成長及SiO2膜5之選擇成長分別為1次。然而,碳膜4之選擇成長及SiO2膜5之選擇成長不限1次。亦可進行2次以上而使碳膜4及SiO2膜5之膜厚長到所設計的厚度。第2實施形態即為此種之一例。
圖5係顯示此發明第2實施形態之選擇成長方法的一例之流程圖,圖6A~圖6H係概略地顯示圖5所示之順序中的被處理體之狀態的剖面圖。
首先,如圖5中之步驟S1及步驟S2、以及圖6A~圖6D所示,根據第1實施形態,獲得如圖6D所示之構造體。
著,如圖5中之步驟S3及圖6E所示,使新的可藉燃燒減薄之膜、在本例中為碳膜4-1選擇性成長於殘留的可藉燃燒減薄之膜、在本例中為碳膜4上。
步驟S3之處理條件的一例:
C4H6氣體流量:200sccm
Cl2氣體流量:50sccm
處理時間:180min
處理溫度:350℃
處理壓力:800Pa(約6Torr)
步驟S3之處理條件亦可與步驟S1之處理條件相同,但由於選擇成長之基底從鎢膜3換成碳膜4,故亦可適宜變更。
接著,如圖5中之步驟S4及圖6F~圖6G所示,一面使新的可藉燃燒減薄之膜、在本例為碳膜4-1燃燒,一面使新的矽氧化物膜、例如SiO2膜5-1選擇性成長於基底之SiO2膜5上。
步驟S4之處理條件的一例:
2DMAS氣體流量:200sccm
O3氣體流量:1000sccm
處理時間:30min
處理溫度:350℃
處理壓力:133.3Pa(1Torr)
步驟S4之處理條件亦可與步驟S2之處理條件相同。
接著,如圖5中之步驟S5所示,判斷步驟S3及步驟S4之次數是否為設定之次數。當判斷為達到設定之次數(Yes)時,便結束處理。反之,當判斷為未達到設定之次數(No)時,則返回步驟S3,再反覆進行步驟S3及步驟S4。
藉進行1次以上此種步驟S3及步驟S4,如圖6H所示,亦可獲得具有作為半導體積體電路裝置所需之設計的膜厚t之碳膜4、及SiO2膜5作為最終構造。
又,在第2實施形態中,碳膜4亦可如圖7所示予以去除。藉該去除處理,可獲得下述優點,該優點係於基底之鎢膜3上獲得「自對準成鎢膜3的圖形且比第1實施形態深之開孔6’」。
(第3實施形態)
<選擇成長方法>
在第1、第2實施形態中,碳膜4之基底為鎢。具有如鎢膜3之觸媒作用的金屬除了鎢(W)外,還可舉Ti、V、Cr、Mn、Fe、Co、Ni、Cu、Zn、Ga、Ge、Si、Zr、Nb、Mo、Tc、Ru、Rh、Pd、In、Sn、Hf、Ta、Re、Os、Ir、Pt、Au等為例。
然而,在上述金屬中,亦有吸附烴氣體中之烴及使鹵素氣體或鹵化烴氣體之分子分解的反應不易在低溫產生之金屬。
此時,亦可於基底之金屬膜的露出面形成由其他金屬構成之其他金屬膜,該其他金屬可在比存在於基底之金屬膜的內部之金屬低溫的狀態下,促進烴氣體中之烴的吸附及鹵素氣體或鹵化烴氣體之分子的分解。第3實施形態即為此之一例。
圖8係顯示此發明第3實施形態之選擇成長方法的一例之流程圖,圖9A~圖9J係概略顯示圖8所示之順序中的被處理體之狀態的剖面圖。
首先,如圖8中之步驟S6及圖9A~圖9B所示,使矽膜8選擇性成長於基底之金屬膜、在本例中為鈷膜7上。
步驟S6之處理條件的一例:
SiH4氣體流量:200sccm
處理時間:60min
處理溫度:350℃
處理壓力:133.3Pa(1Torr)
接著,如圖8中之步驟S7及圖9C所示,將矽膜8置換成促進觸媒作用之另一金屬膜。在本例中,將矽膜8置換成作為該另一金屬膜之鎢膜9。
步驟S7之處理條件之一例:
WF6氣體流量:200sccm
處理時間:30min
處理溫度:350℃
處理壓力:133.3Pa(1Torr)
在此之後,如圖8中之步驟S1~步驟S5、以及圖9D~9I所示,例如根據第2實施形態,進行處理。
如此,基底之金屬膜的金屬為不易在低溫產生觸媒反應的金屬時,亦可於基底之金屬膜的露出面上形成即使在較低溫也可產生觸媒反應之另一金屬膜。
如此,於基底之金屬膜的露出面上形成由即使在較低溫也可產生觸媒反應之金屬的另一金屬膜、在本例為鎢膜9時的最終形狀如圖9J所示,係於基底之金屬膜、在本例中為鈷膜7與碳膜4之間存在鎢膜9的形狀。
又,在第3實施形態中,碳膜4及鎢膜9亦可如圖10所示,予以去除。去除碳膜4及鎢膜9時,如第2實施形態所說明,可獲得下述優點,前述優點係在基底之鈷膜7上獲得「自對準成鈷膜7之圖形且比第1實施形態深的開孔6”」。
(第4實施形態)
第4實施形態係有關於可實施上述第1~第3實施形態之選擇成長方法的基板處理裝置之一例。
圖11係概略顯示此發明之第4實施形態的基板處理裝置之一例的縱剖面圖。
如圖11所示,基板處理裝置100具有下端開口之有天花板的圓筒體狀處理室101。處理室101全體以例如石英形成。於處理室101內之天花板設有石英製天花板板體102。以例如不鏽鋼成形成圓筒體狀之歧管103藉由O形環等密封構件104連結於處理室101之下端開口部。
歧管103支撐處理室101之下端。可從歧管103之下方將可載置多段作為被處理體的複數片、例如50~100片半導體晶圓、在本例中為矽晶圓1之石英製晶舟105***處理室101內。晶舟105具有複數根支柱106,而可藉形成於支柱106之溝支撐複數片晶圓1。
晶舟105藉由石英製保溫筒107載置於工作台108上。工作台108支撐於貫穿用以開關歧管103之下端開口部的例如不鏽鋼製蓋部109之旋轉軸110上。於旋轉軸110之貫穿部設有例如磁性流體密封件111,而將旋轉軸110密封成氣密且支撐成可旋轉。於蓋部109之周邊部與歧管103的下端部之間設有例如由O形環構成之密封構件112。藉此,保持了處理室101內之密封性。旋轉軸110安裝於例如支撐在晶舟升降機等升降機構(圖中未示)之臂113的前端。藉此,晶舟105及蓋部109等可一體地升降而對處理室101內***脫離。
基板處理裝置100具有將用於處理之氣體供至處理室101內之處理氣體供給機構114、將惰性氣體供至處理室101內之惰性氣體供給機構115。
處理氣體供給機構114具有烴氣體供給源117a、鹵素氣體供給源117b、含有矽之氣體供給源117c、及含有氧之氣體供給源117d而構成。
在本例中,烴氣體供給源117a將C4H6氣體作為烴氣體供至處理室101內,鹵素氣體供給源117b將Cl2氣體作為鹵素氣體供至處理室101內,含有矽之處理氣體
供給源117c將2DMAS氣體作為含有矽之氣體供至處理室101內,含有氧之氣體供給源117d將含有氧之氣體O3氣體供至處理室101內。
惰性氣體供給機構115包含惰性氣體供給源120而構成。惰性氣體供給源120將N2氣體作為惰性氣體供至處理室101內。
此外,鹵素氣體供給源117b除了鹵素氣體外,亦可供給鹵化烴氣體。
烴氣體供給源117a藉由流量控制器121a及開關閥122a連接於分散噴嘴123a。同樣地,鹵素氣體供給源117b藉由流量控制器121b及開關閥122b,連接於圖中未示之分散噴嘴123b,同樣地,含有矽之氣體供給源117c藉由流量控制器121c及開關閥122c,連接於圖中未示之分散噴嘴123c,含有氧之氣體供給源117d藉由流量控制器121d及開關閥122d連接於分散噴嘴123d。
分散噴嘴123a~123d由石英管構成,在歧管103之側壁貫穿至內側後往上方彎曲再垂直地延伸。複數之氣體吐出孔124a~124d隔著預定間隔形成於分散噴嘴123a~123d之垂直部分。烴氣體、鹵素氣體、含有矽之氣體、含有氧之氣體分別從氣體吐出孔124a~124d朝處理室101內往水平方向大約均一地吐出。
惰性氣體供給源120藉由流量控制器121e及開關閥122e,連接於噴嘴128。噴嘴128貫穿歧管103之側壁,從其前端使惰性氣體往水平方向吐出至處理室101內。
處理室101內之分散噴嘴123a~123d的對側之部分設有用以將處理室101內排氣之排氣口129。排氣口129係藉將處理室101之側壁往上下方向削去一部分而形成細長。截面成形成字形之排氣口蓋構件130藉焊接安裝於處理室101之對應排氣口129的部份,而可覆蓋排氣口129。排氣口蓋構件130沿著處理室101之側壁往上方延伸,而於處理室101之上方規定氣體出口131。於氣體出口131連接包含真空泵等之排氣機構132。排氣機構132將藉將處理室101內排氣而用於處理的處理氣體之排氣、及處理室101內之壓力作為對應處理的處理壓力。
於處理室101之外周設有筒體狀加熱裝置133。加熱裝置133將供至處理室101內之處理氣體活性化,並且將收納於處理室101內之被處理體、在本例為晶圓1加熱。
基板處理裝置100之各部的控制以例如由微處理器(電腦)構成之控制器150進行。於控制器150連接有用戶介面151。用戶介面121包含有具有為了供操作員管理基板處理裝置100而進行指令之輸入操作等的觸摸面板顯示器及鍵盤等的輸入部、及具有將基板處理裝置100之運作狀況可視化而顯示的顯示器等之顯示部。
於控制器150連接有記憶部152。記憶部152儲存用以藉控制器150之控制實現在基板處理裝置100實施之各種處理的控制程式、用以按處理條件使基板處理裝置100之各結構部實施處理的程式亦即程式庫。程式庫記憶於例如記憶部152
中之記憶媒體。記憶媒體可為硬碟或半導體記憶體,亦可為CD-ROM、DVD、快閃記憶體等具可攜性者。又,亦可從其他裝置藉由例如專用線路適宜傳送程式庫。程式庫可依需要,以來自用戶介面151之指示等從記憶部152讀取,由控制器150根據所讀取之程式庫,實施處理,藉此,基板處理裝置100可在控制器150之控制下實施所期之處理。
在本例中,在控制器150之控制下,實施上述第1~第3實施形態之選擇成長方法。上述第1~第3實施形態之選擇成長方法可藉圖11所示之基板處理裝置100實施。
以上,根據第1~第4實施形態,說明了此發明,此發明不限於上述第1~第4實施形態,可在不脫離其旨趣的範圍作各種變形。
舉例而言,在上述實施形態中,具體地例示了處理條件,處理條件不限於上述具體之例示。處理條件可按收納被處理體之處理室的容積、處理壓力的變更等變更。
根據此發明,可提供能適應更細微之半導體裝置構造的選擇成長方法、及可實施該選擇成長方法之基板處理裝置。
此次所揭示之實施形態應視為所有點皆為例示,並非限制。實際上上述實施形態可以多種形態實現。又,上述實施形態在不脫離隨附之申請專利範圍及
其主旨下,亦可以各種形態省略、置換、變更。本發明之範圍係謀求包含隨附的申請專利範圍及與其均等之涵義以及範圍內的所有變更。
Claims (11)
- 一種選擇成長方法,其係使薄膜選擇性成長於絕緣膜及金屬膜露出之基底上,並包含下列製程: (1)將該基底之金屬用於觸媒,使可藉燃燒減薄之膜選擇性成長於該基底之金屬膜上; (2)一面使該可藉燃燒減薄之膜燃燒,一 面使矽氧化物膜選擇性成長於該基底之絕緣膜上。
- 如申請專利範圍第1項之選擇成長方法,其於該(2)製程後更包含下列製程: (3)使新的可藉燃燒減薄之膜選擇性成長於殘留的該可藉燃燒減薄之膜上; (4)一面使該新的可藉燃燒減薄之膜燃燒,一面使新的矽氧化物膜選擇性成長於該矽氧化物膜上; 該選擇成長方法進行該(3)製程及(4)製程1次或反覆進行至設定之次數。
- 如申請專利範圍第1項之選擇成長方法,其於該(2)製程後,更包含下列製程: (5)將該矽氧化物膜用於遮罩,去除該可藉燃燒減薄之膜。
- 如申請專利範圍第2項之選擇成長方法,其於該(4)製程後,更包含下列製程: (6)將該新的矽氧化物膜用於遮罩,去除該新的可藉燃燒減薄之膜及該可藉燃燒減薄之膜。
- 如申請專利範圍第1項之選擇成長方法,其中, 該可藉燃燒減薄之膜為碳膜或釕膜。
- 如申請專利範圍第5項之選擇成長方法,其中, 該可藉燃燒減薄之膜為碳膜時, 該碳膜之原料氣體包含烴氣體及鹵素氣體或鹵化烴氣體, 該金屬為可吸附該烴氣體中之烴而使該鹵素氣體或鹵化烴氣體的分子分解的金屬。
- 如申請專利範圍第6項之選擇成長方法,其中, 該鹵素為Cl或I任一個。
- 如申請專利範圍第1項之選擇成長方法,其中, 該矽氧化物膜之原料氣體包含含有矽之氣體及含有氧之氣體。
- 如申請專利範圍第6項之選擇成長方法,其中, 於該基底之金屬膜的露出面形成有由另一金屬構成之另一金屬膜,該另一金屬係可在溫度低於存在於該基底之金屬膜內部的金屬之狀態下,促進該烴氣體中之烴的吸附與該鹵素氣體或鹵化烴氣體之分子的分解。
- 如申請專利範圍第1項之選擇成長方法,其中, 該金屬含有Ti、V、Cr、Mn、Fe、Co、Ni、Cu、Zn、Ga、Ge、Si、Zr、Nb、Mo、Tc、Ru、Rh、Pd、In、Sn、Hf、Ta、W、Re、Os、Ir、Pt、Au任一者。
- 一種基板處理裝置,其係使薄膜選擇性成長於被處理體之絕緣膜及金屬膜露出的被處理面上,並包含有: 處理室,其係收納該被處理體; 氣體供給機構,其係至少將烴氣體、鹵素氣體或鹵化烴氣體、含有矽之氣體、及含有氧之氣體供至該處理室內; 加熱裝置,其加熱該處理室內; 排氣機構,其將該處理室內排氣;及 控制器,其控制該氣體供給機構、該加熱裝置、及該排氣機構; 又,該控制器將該氣體供給機構、該加熱裝置、及該排氣機構控制成在該處理室內,對該被處理體實施如申請專利範圍第1項所記載之選擇成長方法。
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