JP2015220303A - ウェーハの加工方法及び中間部材 - Google Patents
ウェーハの加工方法及び中間部材 Download PDFInfo
- Publication number
- JP2015220303A JP2015220303A JP2014101965A JP2014101965A JP2015220303A JP 2015220303 A JP2015220303 A JP 2015220303A JP 2014101965 A JP2014101965 A JP 2014101965A JP 2014101965 A JP2014101965 A JP 2014101965A JP 2015220303 A JP2015220303 A JP 2015220303A
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- JP
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- Prior art keywords
- wafer
- intermediate member
- support plate
- grinding
- outer peripheral
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 238000003672 processing method Methods 0.000 title claims abstract description 15
- 239000000853 adhesive Substances 0.000 claims abstract description 37
- 230000001070 adhesive effect Effects 0.000 claims abstract description 36
- 230000002093 peripheral effect Effects 0.000 claims abstract description 23
- 238000000034 method Methods 0.000 abstract description 2
- 229920002472 Starch Polymers 0.000 abstract 1
- 235000019698 starch Nutrition 0.000 abstract 1
- 239000008107 starch Substances 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 7
- 239000003292 glue Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
- H01L2221/6839—Separation by peeling using peeling wedge or knife or bar
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
12 サポートプレート
14 中間部材
15 デバイス
16 柔軟部材
17 バンプ
18 接着部材
19 中央領域(バンプ形成領域)
20 テープ
21 外周余剰領域(バンプ未形成領域)
22 切削ユニット
30 バイト工具
36 研削ユニット
42 研削ホイール
46 研削砥石
50,50A 切削ユニット
54 切削ブレード
Claims (3)
- それぞれ複数のバンプが形成された複数のデバイスが配設された中央領域と該中央領域を囲繞する外周余剰領域とを表面に有するウェーハの加工方法であって、
ウェーハの該中央領域に対応した柔軟部材と、該柔軟部材の外周縁に配設された接着部材とを有する中間部材を準備する中間部材準備ステップと、
サポートプレート上に該中間部材を該接着部材を介して貼着するとともに、該サポートプレート上に貼着された該中間部材上に、ウェーハの該中央領域を該柔軟部材に当接させた状態で該接着部材を介してウェーハを貼着する貼着ステップと、
該貼着ステップを実施した後、ウェーハの裏面を研削する研削ステップと、
該研削ステップを実施した後、該サポートプレートからウェーハを剥離する剥離ステップと、
を備えたことを特徴とするウェーハの加工方法。 - 前記研削ステップを実施した後前記剥離ステップを実施する前に、ウェーハを外周部が環状フレームに貼着されたダイシングテープに貼着する転写ステップを更に備えた請求項1記載のウェーハの加工方法。
- それぞれ複数のバンプが形成された複数のデバイスが配設された中央領域と該中央領域を囲繞する外周余剰領域とを表面に有するウェーハの加工方法で用いられる中間部材であって、
ウェーハの該中央領域に対応した柔軟部材と、
該柔軟部材の外周縁に配設されたウェーハの該外周余剰領域に対応した接着部材と、
を備えたことを特徴とする中間部材。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014101965A JP6385133B2 (ja) | 2014-05-16 | 2014-05-16 | ウェーハの加工方法及び中間部材 |
TW104111929A TWI660416B (zh) | 2014-05-16 | 2015-04-14 | Wafer processing method and intermediate member |
KR1020150061249A KR102455708B1 (ko) | 2014-05-16 | 2015-04-30 | 웨이퍼 가공 방법 및 중간 부재 |
CN201510249266.4A CN105097631B (zh) | 2014-05-16 | 2015-05-15 | 晶片的加工方法及中间部件 |
DE102015208977.0A DE102015208977A1 (de) | 2014-05-16 | 2015-05-15 | Waferbearbeitungsverfahren und Zwischenelement |
KR1020210076724A KR102432506B1 (ko) | 2014-05-16 | 2021-06-14 | 웨이퍼 가공 방법 및 중간 부재 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014101965A JP6385133B2 (ja) | 2014-05-16 | 2014-05-16 | ウェーハの加工方法及び中間部材 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015220303A true JP2015220303A (ja) | 2015-12-07 |
JP6385133B2 JP6385133B2 (ja) | 2018-09-05 |
Family
ID=54361920
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014101965A Active JP6385133B2 (ja) | 2014-05-16 | 2014-05-16 | ウェーハの加工方法及び中間部材 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP6385133B2 (ja) |
KR (2) | KR102455708B1 (ja) |
CN (1) | CN105097631B (ja) |
DE (1) | DE102015208977A1 (ja) |
TW (1) | TWI660416B (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7477325B2 (ja) | 2020-03-06 | 2024-05-01 | 株式会社ディスコ | 加工方法 |
JP7511980B2 (ja) | 2020-07-21 | 2024-07-08 | 株式会社ディスコ | キャリア板の除去方法 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2551732B (en) * | 2016-06-28 | 2020-05-27 | Disco Corp | Method of processing wafer |
JP6906843B2 (ja) * | 2017-04-28 | 2021-07-21 | 株式会社ディスコ | ウェーハの加工方法 |
JP6914587B2 (ja) * | 2017-05-25 | 2021-08-04 | 株式会社ディスコ | ウェーハの加工方法 |
DE102018200656A1 (de) * | 2018-01-16 | 2019-07-18 | Disco Corporation | Verfahren zum Bearbeiten eines Wafers |
US20220148905A1 (en) * | 2019-02-26 | 2022-05-12 | Disco Corporation | Back grinding adhesive sheet, and method for manufacturing semiconductor wafer |
CN111730775B (zh) * | 2020-07-20 | 2024-07-23 | 天津城建大学 | 适用于金刚石线切割机微型化分割的晶片载物板及方法 |
Citations (5)
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US20050142696A1 (en) * | 2003-12-26 | 2005-06-30 | Advanced Semiconductor Engineering, Inc. | Method of backside grinding a bumped wafer |
JP2009188010A (ja) * | 2008-02-04 | 2009-08-20 | Lintec Corp | 脆質部材用支持体および脆質部材の処理方法 |
JP2012084780A (ja) * | 2010-10-14 | 2012-04-26 | Renesas Electronics Corp | 半導体装置の製造方法 |
JP2014053351A (ja) * | 2012-09-05 | 2014-03-20 | Disco Abrasive Syst Ltd | ウエーハの加工方法 |
JP2014067970A (ja) * | 2012-09-27 | 2014-04-17 | Disco Abrasive Syst Ltd | 表面保護部材および加工方法 |
Family Cites Families (10)
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JPH05198542A (ja) | 1991-09-02 | 1993-08-06 | Mitsui Toatsu Chem Inc | 半導体ウエハの裏面研削方法および該方法に用いる粘着テープ |
JP2004207606A (ja) | 2002-12-26 | 2004-07-22 | Disco Abrasive Syst Ltd | ウェーハサポートプレート |
JP2008060361A (ja) * | 2006-08-31 | 2008-03-13 | Nitto Denko Corp | 半導体ウェハの加工方法、及びそれに用いる半導体ウェハ加工用粘着シート |
JP4779924B2 (ja) | 2006-10-20 | 2011-09-28 | ソニー株式会社 | 半導体装置の製造方法 |
AT508318B1 (de) * | 2008-01-24 | 2022-07-15 | Brewer Science Inc | Verfahren für eine vorübergehende montage eines bausteinwafers auf einem trägersubstrat |
JP5501060B2 (ja) * | 2009-04-02 | 2014-05-21 | 日東電工株式会社 | 半導体ウエハ保護用粘着シートの貼り合わせ方法、及びこの貼り合わせ方法に用いる半導体ウエハ保護用粘着シート |
JP2011119524A (ja) * | 2009-12-04 | 2011-06-16 | Disco Abrasive Syst Ltd | ウエーハの加工方法 |
JP5946260B2 (ja) * | 2011-11-08 | 2016-07-06 | 株式会社ディスコ | ウエーハの加工方法 |
JP5840003B2 (ja) * | 2012-01-23 | 2016-01-06 | 株式会社ディスコ | ウエーハの加工方法 |
JP2014017462A (ja) * | 2012-03-02 | 2014-01-30 | Fujifilm Corp | 半導体装置の製造方法 |
-
2014
- 2014-05-16 JP JP2014101965A patent/JP6385133B2/ja active Active
-
2015
- 2015-04-14 TW TW104111929A patent/TWI660416B/zh active
- 2015-04-30 KR KR1020150061249A patent/KR102455708B1/ko active IP Right Grant
- 2015-05-15 DE DE102015208977.0A patent/DE102015208977A1/de active Pending
- 2015-05-15 CN CN201510249266.4A patent/CN105097631B/zh active Active
-
2021
- 2021-06-14 KR KR1020210076724A patent/KR102432506B1/ko active IP Right Grant
Patent Citations (5)
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US20050142696A1 (en) * | 2003-12-26 | 2005-06-30 | Advanced Semiconductor Engineering, Inc. | Method of backside grinding a bumped wafer |
JP2009188010A (ja) * | 2008-02-04 | 2009-08-20 | Lintec Corp | 脆質部材用支持体および脆質部材の処理方法 |
JP2012084780A (ja) * | 2010-10-14 | 2012-04-26 | Renesas Electronics Corp | 半導体装置の製造方法 |
JP2014053351A (ja) * | 2012-09-05 | 2014-03-20 | Disco Abrasive Syst Ltd | ウエーハの加工方法 |
JP2014067970A (ja) * | 2012-09-27 | 2014-04-17 | Disco Abrasive Syst Ltd | 表面保護部材および加工方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7477325B2 (ja) | 2020-03-06 | 2024-05-01 | 株式会社ディスコ | 加工方法 |
JP7511980B2 (ja) | 2020-07-21 | 2024-07-08 | 株式会社ディスコ | キャリア板の除去方法 |
Also Published As
Publication number | Publication date |
---|---|
TW201606869A (zh) | 2016-02-16 |
KR102432506B1 (ko) | 2022-08-12 |
KR102455708B1 (ko) | 2022-10-17 |
CN105097631B (zh) | 2020-10-27 |
KR20150131964A (ko) | 2015-11-25 |
JP6385133B2 (ja) | 2018-09-05 |
CN105097631A (zh) | 2015-11-25 |
KR20210075049A (ko) | 2021-06-22 |
TWI660416B (zh) | 2019-05-21 |
DE102015208977A1 (de) | 2015-11-19 |
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