CN105097631B - 晶片的加工方法及中间部件 - Google Patents

晶片的加工方法及中间部件 Download PDF

Info

Publication number
CN105097631B
CN105097631B CN201510249266.4A CN201510249266A CN105097631B CN 105097631 B CN105097631 B CN 105097631B CN 201510249266 A CN201510249266 A CN 201510249266A CN 105097631 B CN105097631 B CN 105097631B
Authority
CN
China
Prior art keywords
wafer
bonding
central region
intermediate member
carrier plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201510249266.4A
Other languages
English (en)
Other versions
CN105097631A (zh
Inventor
卡尔·普利瓦西尔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Disco Corp
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Publication of CN105097631A publication Critical patent/CN105097631A/zh
Application granted granted Critical
Publication of CN105097631B publication Critical patent/CN105097631B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H01L2221/68386—Separation by peeling
    • H01L2221/6839—Separation by peeling using peeling wedge or knife or bar

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)

Abstract

晶片的加工方法及中间部件，在剥离保护部件时不使凸点间残留糊或粘合剂，还容易剥离保护部件。晶片在表面上具有：中央区域，其配设有多个器件，该多个器件分别形成有多个凸点；和外周剩余区域，其围绕该中央区域，该加工方法具有：中间部件准备步骤，准备中间部件，该中间部件具有与晶片的该中央区域对应的柔软部件、和配设于该柔软部件的外周边缘的粘合部件；粘贴步骤，经由该粘合部件将该中间部件粘贴到承载板上，并在使晶片的该中央区域与该柔软部件抵接的状态下经由该粘合部件将晶片粘贴到已粘贴在该承载板上的中间部件上；磨削步骤，在实施了该粘贴步骤后对晶片的背面进行磨削；和剥离步骤，在实施了该磨削步骤后，将晶片从该承载板上剥离。

Description

晶片的加工方法及中间部件
技术领域
本发明涉及晶片的加工方法及在该加工方法中使用的中间部件，所述晶片的各器件具有多个凸点。
背景技术
在半导体晶片的表面上形成有IC(Integrated Circuit：集成电路)、LSI(largescale integration：大规模集成电路)等大量器件，且一个个器件通过形成为格子状的多条分割预定线(间隔道)而划分，通过磨削装置对该半导体晶片的背面进行磨削而加工成规定的厚度之后，通过切削装置(Dicing(划线)装置)沿分割预定线进行切削而被分割成一个个器件，分割出的器件广泛应用于携带电话、电脑等各种电子设备中。
对晶片的背面进行磨削的磨削装置具有：卡盘工作台，其保持晶片；以及磨削单元，其以能够旋转的方式安装有磨轮，上述磨轮具有对保持在该卡盘工作台上的晶片进行磨削的磨具，该磨削装置能够高精度地将晶片磨削成期望的厚度。
由于要想对晶片的背面进行磨削，必须借助卡盘工作台对形成有多个器件的晶片的表面侧进行吸引保持，所以为了不损伤器件一般会在晶片的表面粘贴保护带(例如参照日本特开平5-198542号公报)。
近年来，电子设备具有小型化、薄型化的倾向，要求组装于电子设备的半导体器件也同样小型化、薄型化。但是，如果对晶片的背面进行磨削而使之薄化到例如100μm以下甚至50μm以下，则因为刚性显著降低而非常难以进行其后的操作。而且，根据情况还会存在晶片产生弯曲、因为弯曲而晶片自身破损的担忧。
为了解决这种问题而采用晶片承载***(WSS)。在WSS中，预先将晶片的表面侧使用粘合剂粘贴到具有刚性的保护部件上之后，再对晶片的背面进行磨削使之薄化到规定的厚度(例如，参照日本特开2004-207606号公报)。
专利文献1：日本特开平5-198542号公报
专利文献2：日本特开2004-207606号公报
但是，将晶片从保护带或WSS的保护部件剥离而不使其破损比较困难，尤其是近年来，因为具有晶片的大口径化和最终厚度薄化的倾向，将晶片从保护部件剥离而不使其破损的难度增加。并且，还存在使晶片从保护部件剥离后在器件的表面残留糊或粘合剂的问题。
尤其是在各器件上形成有多个凸点的晶片中，由于凸点的凹凸，不但难以将晶片平坦地粘贴在保护部件上，而且还存在糊或粘合剂残留于凸点间的问题。
发明内容
本发明是鉴于上述问题而完成的，其目的在于提供一种晶片的加工方法，其在剥离保护部件时不会使糊或粘合剂残留于凸点间，而且还容易剥离保护部件。
根据技术方案1所述的发明，提供一种晶片的加工方法，所述晶片在表面上具有：中央区域，在该中央区域配设有多个器件，所述多个器件分别形成有多个凸点；以及外周剩余区域，其围绕该中央区域，其特征在于，该晶片的加工方法具有：中间部件准备步骤，准备中间部件，所述中间部件具有与晶片的该中央区域对应的柔软部件、以及配设于该柔软部件的外周边缘的粘合部件；粘贴步骤，经由该粘合部件将该中间部件粘贴到承载板上，并且在使晶片的该中央区域与该柔软部件抵接的状态下经由该粘合部件将晶片粘贴到已粘贴在该承载板上的中间部件上；磨削步骤，在实施了该粘贴步骤之后对晶片的背面进行磨削；以及剥离步骤，在实施了该磨削步骤之后，将晶片从该承载板上剥离。
根据技术方案3所述的发明，提供一种中间部件，在晶片的加工方法中使用该中间部件，所述晶片的表面具有：中央区域，在该中央区域配设有多个器件，所述多个器件分别形成有多个凸点；以及外周剩余区域，其围绕该中央区域，其特征在于，该中间部件具有：柔软部件，其与晶片的该中央区域对应；以及粘合部件，其与配设于该柔软部件的外周边缘的晶片的该外周剩余区域对应。
根据本发明的晶片的加工方法，经由中间部件将晶片粘贴到承载板上，其中中间部件具有：柔软部件，其与所粘贴的晶片的中央区域对应；以及粘合部件，其配设于柔软部件的外周边缘。
因此，因为经由中间部件将晶片粘贴到承载板上，并且晶片的中央区域与中间部件之间不存在糊或者粘合剂，所以将晶片从承载板上剥离时不会使凸点间残留糊或者粘合剂。
因为通过配设于柔软部件的外周边缘的粘合部件将晶片粘合到承载板上，所以也容易从承载板上剥离晶片。并且，因为在柔软部件与晶片的中央区域抵接的状态下将晶片粘贴到承载板上，所以凸点的凹凸被柔软部件吸收，从而在使晶片的背面平坦化的状态下粘贴到承载板上。
附图说明
图1是适用于实施本发明的加工方法的晶片的立体图。
图2是在粘贴步骤中进行粘贴的晶片、中间部件以及承载板的剖视图。
图3(A)是在柔软部件的整个周面上配设有粘合部件的中间部件的俯视图，图3(B)是在柔软部件的外周的多个位置配设有粘合部件的中间部件的俯视图。
图4是实施粘贴步骤后的晶片、中间部件以及承载板的剖视图。
图5(A)是在承载板上粘贴有保护带的状态下的剖视图，图5(B)是示出使用刀头切削装置切削保护带使之平坦化的情况的局部剖面侧视图。
图6是示出磨削步骤的立体图。
图7是示出转印步骤的剖视图。
图8是示出剥离步骤的第1实施方式的剖视图。
图9是示出剥离步骤的第2实施方式的剖视图。
标号说明
11：半导体晶片；12：承载板；14：中间部件；15：器件；16：柔软部件；17：凸点；18：粘合部件；19：中央区域(凸点形成区域)；20：带；21：外周剩余区域(凸点未形成区域)；22：切削单元；30：刀头工具；36：切削单元；42：磨轮；46：磨具；50、50A：切削单元；54：切削刀具。
具体实施方式
下面参照附图对本发明的实施方式详细地进行说明。参照图1，示出适用于通过本发明的加工方法进行加工的半导体晶片(下文中有时简称为“晶片”)11的立体图。
半导体晶片11具有表面11a和背面11b，在表面11a上正交形成有多条间隔道(分割预定线)13，在通过间隔道13划分的各区域中分别形成有器件15。半导体晶片11例如由厚度为700μm的硅晶片构成。
如图1的放大图所示，在各器件15的四边形成有多个突起状的凸点17。因为在各器件15的四边形成有凸点17，所以半导体晶片11具有：形成有凸点17的中央区域(凸点形成区域)19；以及外周剩余区域(外周凸点未形成区域)21，其围绕中央区域19。
参照图2，示出晶片11、粘贴到晶片11的表面11a上的承载板12、以及中间部件14的剖视图。承载板12例如由硅晶片或者玻璃晶片构成。
此外，在晶片11的外周部形成有从表面至背面的圆弧状的倒角部11e，如果在之后说明的磨削步骤中对晶片11的背面11b进行磨削使晶片11形成为规定的厚度，则会因倒角部11e的一部分而在晶片11的外周部上形成锐边。作为其对策，优选至少在实施磨削步骤之前实施边缘修剪，即借助切削刀具将晶片11的倒角部11e的一部分去除成圆形。
中间部件14由柔软部件16和粘合部件18构成，其中柔软部件16由橡胶或者海绵橡胶等形成，粘合部件18配设于柔软部件16的外周。粘合部件18的厚度t1是1～5mm，更优选是2～3mm左右。粘合部件18例如由粘合剂形成，当在实施下文中说明的粘贴步骤后要对晶片11进行热处理的情况下，作为粘合部件18选择具有耐热性的物质。
如图3(A)所示，中间部件14由圆形的柔软部件16和遍及柔软部件16的整个外周连续配设的粘合部件18构成。或者如图3(B)所示，中间部件14A由圆形的柔软部件16和在柔软部件16的外周的多个位置配设的粘合部件18构成。
在本发明的晶片加工方法中，准备了中间部件14之后，以如下的方式实施粘贴步骤：如图4所示，经由粘合部件18将中间部件14粘贴到承载板12上，并且以使晶片11的中央区域(凸点形成区域)19在已粘贴到承载板12上的中间部件14上与柔软部件16抵接的状态，经由粘合部件18将晶片11粘贴到中间部件14上。通过实施该粘贴步骤，晶片11只是经由配设于中间部件14的外周的粘合部件18就被粘贴到承载板12上。
在实施对晶片11的背面11b进行磨削的磨削步骤之前，为了提高晶片11的背面11b的精度，优选如图5(A)所示，在承载板12上粘贴由基材和糊层构成的带20。
进行了带的粘贴之后，如图5(B)所示，使用刀头切削装置对带20进行切削使之平坦化。在图5(B)中，标号22是刀头切削装置的刀头切削单元，其含有：主轴24，其被驱动而旋转；座26，其固定于主轴24的末端；以及刀头轮28，其以能够装卸的方式安装在座26上。在刀头轮28上，在其末端以能够装卸的方式安装有刀头工具30，该刀头工具30具有由金刚石构成的切刃。
在带20平坦化步骤中，利用刀头切削装置的卡盘工作台32吸引保持晶片11而使带20露出。并且，将刀头工具30定位到能够以规定的深度切入带20的高度位置之后，一边使刀头轮28以例如大约2000rpm旋转，一边使卡盘工作台32以规定的进给速度沿箭头A方向移动，使用刀头工具30对带20进行旋转切削。
在进行该旋转切削时，不使卡盘工作台32旋转而沿箭头A方向进行加工进给。如果实施带20平坦化步骤，则能够获得晶片11的背面11b与带20的表面之间的足够的平行度。
但是，当在承载板12上经由中间部件14粘贴了晶片11时，在能够充分确保承载板12的承载面(下表面)与晶片11的背面11b之间的平行度的情况下，就未必需要在承载板12上粘贴带20。
在实施图4所示的粘贴步骤之后，或者实施图5(B)所示的带平坦化步骤之后，实施对晶片11的背面11b进行磨削的磨削步骤。在磨削步骤中，如图6所示，利用磨削装置的卡盘工作台48吸引保持承载板12，使晶片11的背面11b露出。
在图6中，磨削单元36含有：主轴38，其被驱动而旋转；轮座40，其固定于主轴38的末端；以及磨轮42，其通过多个螺钉41以能够装卸的方式安装于轮座40。磨轮42由环状的轮基座44、以及在轮基座44的下端外周部呈环状固定安装的多个磨具46构成。
在磨削步骤中，一边使卡盘工作台48以例如300rpm沿箭头a所示的方向旋转，一边使磨轮42以例如6000rpm沿箭头b所示的方向旋转，并且驱动未图示的磨削单元进给机构而使磨轮42的磨具46与晶片11的背面11b接触。
并且，使磨轮42以规定的磨削进给速度向下方磨削进给规定的量。使用接触式或者非接触式的厚度测量仪测量晶片11的厚度，并且将晶片11磨削成规定的厚度(例如100μm)。
此外，该磨削步骤并不限定于图6示出的实施方式，也可以以如下方式实施：使用大致为晶片11的半径左右的磨轮，对晶片11的与中央区域19对应的背面11b进行磨削使之形成为圆形凹部，并保留与外周剩余区域21对应的背面使之形成为围绕圆形凹部的环状的凸部。
实施磨削步骤之后，为了确保之后的操作性，优选按照如下方式实施转印步骤：如图7所示，将晶片11的背面11b粘贴到切割带T上，该切割带T的外周部已粘贴在环状框架F上。
实施转印步骤之后，实施将晶片11从承载板12上剥离的剥离步骤。在该剥离步骤的第1实施方式中，如图8(A)所示，利用未图示的卡盘工作台经由切割带T吸引保持晶片11，并通过切削单元50切削中间部件14的粘合部件18将其去除。切削单元50含有：主轴52，其沿铅直方向配设；以及切削刀具54，其安装于主轴52的末端部。
在剥离步骤的第1实施方式中，使沿箭头A方向高速旋转的切削刀具54从侧方切入中间部件14的粘合部件18，并使未图示的卡盘工作台以低速沿箭头R1方向旋转从而切削粘合部件18将其去除。去除粘合部件18之后，如图8(B)所示，将承载板12与柔软部件16一起从粘贴在切割带T上的晶片11上剥离。
下面参照图9对剥离步骤的第2实施方式进行说明。在本实施方式的剥离步骤中，使用普通的切削单元50A，其具有沿水平方向延伸的主轴52。
使沿箭头A方向高速旋转的切削刀具54在承载板12的外周部切入到粘合部件18的下端部附近，并使未图示的卡盘工作台以低速沿箭头R1方向旋转，从而将粘合部件18与承载板12的外周部一起切削去除。
由此，与图8(B)所示情况一样，能够将承载板12与柔软部件16一起从粘贴在切割带T上的晶片11上去除。

Claims (3)

1.一种晶片的加工方法，所述晶片在表面上具有：中央区域，在该中央区域配设有多个器件，所述多个器件分别形成有多个凸点；以及外周剩余区域，其围绕所述中央区域，其特征在于，该晶片的加工方法具有：
中间部件准备步骤，准备中间部件，所述中间部件具有与晶片的所述中央区域对应的柔软部件、以及配设于所述柔软部件的外周边缘的粘合部件；
粘贴步骤，经由所述粘合部件将所述中间部件粘贴到承载板上，并且在使晶片的所述中央区域与所述柔软部件抵接的状态下经由所述粘合部件将晶片粘贴到已粘贴在所述承载板上的中间部件上；
磨削步骤，在实施了所述粘贴步骤之后对晶片的背面进行磨削；以及
剥离步骤，在实施了所述磨削步骤之后，将晶片从所述承载板上剥离，
该柔软部件仅配设于该粘合部件的内侧，通过该柔软部件吸收各凸点的整体。
2.根据权利要求1所述的晶片的加工方法，其中，
该晶片的加工方法还具有转印步骤，在实施了所述磨削步骤之后且实施所述剥离步骤之前，将晶片粘贴到外周部已粘贴在环状框架上的切割带上。
3.一种中间部件，在晶片的加工方法中使用该中间部件，所述晶片的表面具有：中央区域，在该中央区域配设有多个器件，所述多个器件分别形成有多个凸点；以及外周剩余区域，其围绕所述中央区域，其特征在于，该中间部件具有：
柔软部件，其与晶片的所述中央区域对应；以及
粘合部件，其与配设于所述柔软部件的外周边缘的晶片的所述外周剩余区域对应，
该柔软部件仅配设于该粘合部件的内侧，通过该柔软部件吸收各凸点的整体。
CN201510249266.4A 2014-05-16 2015-05-15 晶片的加工方法及中间部件 Active CN105097631B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014-101965 2014-05-16
JP2014101965A JP6385133B2 (ja) 2014-05-16 2014-05-16 ウェーハの加工方法及び中間部材

Publications (2)

Publication Number Publication Date
CN105097631A CN105097631A (zh) 2015-11-25
CN105097631B true CN105097631B (zh) 2020-10-27

Family

ID=54361920

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201510249266.4A Active CN105097631B (zh) 2014-05-16 2015-05-15 晶片的加工方法及中间部件

Country Status (5)

Country Link
JP (1) JP6385133B2 (zh)
KR (2) KR102455708B1 (zh)
CN (1) CN105097631B (zh)
DE (1) DE102015208977A1 (zh)
TW (1) TWI660416B (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2551732B (en) * 2016-06-28 2020-05-27 Disco Corp Method of processing wafer
JP6906843B2 (ja) * 2017-04-28 2021-07-21 株式会社ディスコ ウェーハの加工方法
JP6914587B2 (ja) * 2017-05-25 2021-08-04 株式会社ディスコ ウェーハの加工方法
DE102018200656A1 (de) 2018-01-16 2019-07-18 Disco Corporation Verfahren zum Bearbeiten eines Wafers
WO2020175364A1 (ja) * 2019-02-26 2020-09-03 株式会社ディスコ 裏面研削用粘着シート及び半導体ウエハの製造方法
JP7477325B2 (ja) 2020-03-06 2024-05-01 株式会社ディスコ 加工方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05198542A (ja) 1991-09-02 1993-08-06 Mitsui Toatsu Chem Inc 半導体ウエハの裏面研削方法および該方法に用いる粘着テープ
JP2004207606A (ja) 2002-12-26 2004-07-22 Disco Abrasive Syst Ltd ウェーハサポートプレート
TWI320583B (en) * 2003-12-26 2010-02-11 Advanced Semiconductor Eng Process for backside grinding a bumped wafer
JP2008060361A (ja) * 2006-08-31 2008-03-13 Nitto Denko Corp 半導体ウェハの加工方法、及びそれに用いる半導体ウェハ加工用粘着シート
JP4779924B2 (ja) 2006-10-20 2011-09-28 ソニー株式会社 半導体装置の製造方法
US9111981B2 (en) * 2008-01-24 2015-08-18 Brewer Science Inc. Method for reversibly mounting a device wafer to a carrier substrate
JP2009188010A (ja) * 2008-02-04 2009-08-20 Lintec Corp 脆質部材用支持体および脆質部材の処理方法
JP5501060B2 (ja) * 2009-04-02 2014-05-21 日東電工株式会社 半導体ウエハ保護用粘着シートの貼り合わせ方法、及びこの貼り合わせ方法に用いる半導体ウエハ保護用粘着シート
JP2011119524A (ja) * 2009-12-04 2011-06-16 Disco Abrasive Syst Ltd ウエーハの加工方法
JP2012084780A (ja) * 2010-10-14 2012-04-26 Renesas Electronics Corp 半導体装置の製造方法
JP5946260B2 (ja) * 2011-11-08 2016-07-06 株式会社ディスコ ウエーハの加工方法
JP5840003B2 (ja) * 2012-01-23 2016-01-06 株式会社ディスコ ウエーハの加工方法
JP2014017462A (ja) * 2012-03-02 2014-01-30 Fujifilm Corp 半導体装置の製造方法
JP2014053351A (ja) * 2012-09-05 2014-03-20 Disco Abrasive Syst Ltd ウエーハの加工方法
JP6061590B2 (ja) * 2012-09-27 2017-01-18 株式会社ディスコ 表面保護部材および加工方法

Also Published As

Publication number Publication date
KR102455708B1 (ko) 2022-10-17
DE102015208977A1 (de) 2015-11-19
KR102432506B1 (ko) 2022-08-12
CN105097631A (zh) 2015-11-25
KR20210075049A (ko) 2021-06-22
TW201606869A (zh) 2016-02-16
KR20150131964A (ko) 2015-11-25
TWI660416B (zh) 2019-05-21
JP2015220303A (ja) 2015-12-07
JP6385133B2 (ja) 2018-09-05

Similar Documents

Publication Publication Date Title
CN105097631B (zh) 晶片的加工方法及中间部件
TWI645501B (zh) Support plate, support plate forming method and wafer processing method
JP5877663B2 (ja) ウエーハの研削方法
JP5047838B2 (ja) テープ貼り機
JP2011124266A (ja) ウエーハの加工方法
JP2015217461A (ja) ウェーハの加工方法
JP6824583B2 (ja) ウェーハの加工方法
JP2010186971A (ja) ウエーハの加工方法
JP2013247135A (ja) ウエーハの加工方法
JP2012146889A (ja) ウエーハの研削方法
JP5534793B2 (ja) ウエーハの加工方法
JP2017216274A (ja) ウェーハの加工方法
KR20110063293A (ko) 웨이퍼 가공 방법
CN109216270A (zh) 晶片的加工方法
JP6045426B2 (ja) ウェーハの転写方法および表面保護部材
JP2011124265A (ja) ウエーハの加工方法
JP2010093005A (ja) ウエーハの加工方法
JP5553585B2 (ja) ウエーハの加工方法
JP5545624B2 (ja) ウエーハの加工方法
JP2021111749A (ja) ウエーハの加工方法
JP2018120953A (ja) ウェーハの加工方法
JP2011124264A (ja) ウエーハの加工方法
JP2010021484A (ja) ウエーハの研削方法
JP2010186972A (ja) ウエーハの加工方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant