TWI645501B - Support plate, support plate forming method and wafer processing method - Google Patents

Support plate, support plate forming method and wafer processing method Download PDF

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TWI645501B
TWI645501B TW104111926A TW104111926A TWI645501B TW I645501 B TWI645501 B TW I645501B TW 104111926 A TW104111926 A TW 104111926A TW 104111926 A TW104111926 A TW 104111926A TW I645501 B TWI645501 B TW I645501B
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wafer
support plate
adhesive
region
processing
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TW201545269A (zh
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卡爾 皮拉瓦瑟
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日商迪思科股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
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    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
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    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67346—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders characterized by being specially adapted for supporting a single substrate or by comprising a stack of such individual supports
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49826—Assembling or joining
    • Y10T29/49863—Assembling or joining with prestressing of part
    • Y10T29/49865—Assembling or joining with prestressing of part by temperature differential [e.g., shrink fit]

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  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
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Abstract

本發明的課題是提供一種使晶圓的剝離較容易且不會有膠料或接著劑殘存於元件表面之情形的支撐板。解決手段是供表面具有元件區域與環繞該元件區域之外周剩餘區域的晶圓之表面貼附的支撐板，其中該元件區域形成有複數個元件，該支撐板的特徵為包括基板與柔軟構件，該基板是在對應於被貼附的晶圓之該元件區域的表面區域上形成凹部，並且在對應於晶圓之該外周剩餘區域的區域上形成環狀溝，該柔軟構件是填充於該基板之該凹部，並藉由在該環狀溝中注入接著劑以透過該接著劑將晶圓貼附於該支撐板之表面。

Description

支撐板、支撐板之形成方法及晶圓之加工方法 發明領域
本發明是有關於支持晶圓的支撐板、支撐板之形成方法及使用支撐板的晶圓之加工方法。
發明背景
表面形成有IC、LSI等大量的元件，而且將各個元件以形成為格子狀的複數條分割預定線(切割道)予以劃分的半導體晶圓，是藉由磨削裝置磨削背面而被加工成預定厚度後，藉由切削裝置(切割裝置)切削分割預定線而被分割成一個個的元件，分割後的元件被廣泛利用在行動電話、個人電腦等各種電子機器上。
磨削晶圓之背面的磨削裝置，包括有保持晶圓的工作夾台，及將具有用來磨削保持於該工作夾台上之晶圓的磨削磨石的磨削輪裝設成可旋轉的磨削手段，且可將晶圓高精密地磨削成所期望的厚度。
由於為了磨削晶圓的背面，必須要將形成有大量元件的晶圓的表面側吸引保持在工作夾台上，因此通常會在晶圓的表面貼附保護膠帶以避免元件受到損傷(參照例如日本專利特開平5-198542號公報)。
近年來，電子機器有小型化、薄型化的傾向，因 此被用於組裝的半導體元件也被要求小型化、薄型化。但是，當磨削晶圓的背面而將晶圓薄化成例如100μm以下，或者更進一步薄化成50μm以下時，會因為剛性明顯降低而使之後的處理變得非常困難。而且，根據情況的不同，也有在晶圓上形成翹曲、並因翹曲導致晶圓本身破損之虞。
為了解決這類問題，所採用的是晶圓支撐系統 (WSS)。在WSS中，是事先用接著劑將具有剛性的保護構件貼附於晶圓的表面側之後，再磨削晶圓的背面以薄化成預定厚度(參照例如日本專利特開2004-207606號公報)。
先前技術文獻 專利文獻
專利文獻1：日本專利特開平5-198542號公報
專利文獻2：日本專利特開2004-207606號公報
發明概要
但是，要使晶圓無破損地從保護膠帶或WSS的保護構件上剝離是困難的，特別是近年來，由於有晶圓的大口徑化與完成品厚度薄化之傾向，因此要使晶圓無破損地從保護構件上剝離變得較困難。又，將晶圓從保護構件剝離後，也會有膠料與接著劑殘存於元件表面的問題。
本發明是有鑒於上述的問題點而作成的發明，其目的在於提供一種使晶圓的剝離較容易且不會有膠料與接 著劑殘存於元件表面之情形的支撐板。
根據請求項1記載的發明，是提供一種供表面具有元件區域與圍繞該元件區域的外周剩餘區域的晶圓之表面貼附的支撐板，其中該元件區域形成有複數個元件，該支撐板的特徵在於，其包括：基板，在對應於被貼附的晶圓之該元件區域的表面區域上形成凹部，並且在對應於晶圓的該外周剩餘區域的區域上形成環狀溝；以及柔軟構件，填充於該基板之該凹部；並藉由在該環狀溝中注入接著劑以透過該接著劑將晶圓貼附於該支撐板的表面。
根據請求項2記載的發明，是提供一種請求項1記載的支撐板之形成方法，該支撐板之形成方法的特徵在於，其包括：凹部形成步驟，磨削基板之表面區域以形成凹部，該基板之表面區域對應於被貼附的晶圓之該元件區域；環狀溝形成步驟，在實施該凹部形成步驟之前或之後，以切削刀在對應於被貼附的晶圓之該外周剩餘區域的基板之區域形成環狀溝；以及柔軟構件填充步驟，至少在實施該凹部形成步驟之後，在該凹部中填充柔軟構件。
根據請求項3記載的發明，是提供一種使用請求項1記載的支撐板的晶圓之加工方法，該晶圓之加工方法的 特徵在於，其包括：接著劑注入步驟，在支撐板的該環狀溝中注入接著劑；貼附步驟，在實施該接著劑注入步驟後，透過該接著劑將晶圓貼附於該支撐板上以使晶圓的該元件區域抵接於該柔軟構件；加工步驟，在實施該貼附步驟後，透過該支撐板保持晶圓並對晶圓施行加工；以及接著劑去除步驟，在實施該加工步驟後，使切削刀切入對應於該支撐板之該環狀溝的區域，並去除該接著劑。
在本發明的支撐板上，透過注入在環狀溝中的接著劑只會貼附晶圓的外周剩餘區域，因此不會有膠料或接著劑殘留在元件的表面之情形。由於僅藉由配置於晶圓外周的少量的接著劑來將晶圓貼附於支撐板，因此要將晶圓從支撐板上剝離是容易的。
又，當透過接著劑將晶圓的外周部分貼附於支撐板上時，由於晶圓的元件區域是抵接於支撐板的柔軟構件，因此可防止元件損傷。
4‧‧‧主軸殼體
13‧‧‧基板
15‧‧‧凹部
19‧‧‧柔軟構件
23‧‧‧接著劑
25‧‧‧晶圓
26‧‧‧接著劑供給噴嘴
27‧‧‧切割道
29‧‧‧元件
31‧‧‧元件區域
33‧‧‧外周剩餘區域
35‧‧‧螺絲
10、34‧‧‧磨削輪
11、11A‧‧‧支撐板
12、36‧‧‧輪基台
14、38‧‧‧磨削磨石
16、24、40‧‧‧工作夾台
17、21‧‧‧環狀溝
18、18A‧‧‧切削單元
2、28‧‧‧磨削單元
22、22A‧‧‧切削刀
25a‧‧‧表面
25b‧‧‧背面
25e‧‧‧倒角部
6、20、30、20A‧‧‧主軸
8、32‧‧‧輪座
圖1(A)是第1實施形態的支撐板之剖面圖，圖1(B)是第2實施形態的支撐板之剖面圖。
圖2是顯示凹部形成步驟的立體圖。
圖3是顯示環狀溝形成步驟的局部剖面側視圖。
圖4是顯示柔軟構件填充步驟的剖面圖。
圖5是顯示接著劑注入步驟的剖面圖。
圖6是半導體晶圓的立體圖。
圖7是顯示貼附步驟的剖面圖。
圖8是顯示加工步驟之一例的磨削步驟的立體圖。
圖9(A)是顯示接著劑去除步驟的第1實施形態之局部剖面側視圖，圖9(B)是顯示接著劑去除步驟的第2實施形態之局部剖面側視圖。
圖10是顯示接著劑去除步驟的第3實施形態的局部剖面側視圖。
用以實施發明之形態
以下將參照圖式詳細說明本發明之實施形態。參照圖1(A)，所示為本發明第1實施形態的支撐板11的剖面圖。支撐板11包括基板13與柔軟構件19，該基板13在對應於被貼附的晶圓25(參照圖6)之元件區域31的表面區域上形成凹部15，並且在對應於晶圓25之外周剩餘區域33的區域上形成環狀溝17，該柔軟構件19填充於基板13之凹部15。
基板13是由矽晶圓或者是玻璃晶圓等所構成。環狀溝17是將上表面及其中一側面做成開放。柔軟構件19由例如海綿橡膠、橡膠等所形成。在柔軟構件19具有平坦性的情況中，宜將柔軟構件19的表面形成為與基板13的表面為在同一平面上。
但是，填充於基板13之凹部15中的柔軟構件19 之表面並不具有如此高的平坦性，在實施將柔軟構件19的表面平坦化的平坦化步驟時，宜將柔軟構件19形成得比基板13的表面還高出h1。h1是例如2~20μm左右。
參照圖1(B)，所示為第2實施形態的支撐板11A 的剖面圖。在本實施形態中，是將在對應於晶圓25之外周剩餘區域33的區域上形成的環狀溝21做成僅朝向上方開放的環狀溝。
較理想的是將填充於基板13之凹部15中的柔軟 構件19之表面形成為與基板13之表面為在同一平面上，但是在如上述地實施平坦化步驟的情況中，是將柔軟構件19之表面形成得比基板13之表面還高出2~20μm。
接著，參照圖2說明凹部形成步驟。在圖2中，符 號2為磨削裝置的磨削單元，其包含有可旋轉地收容於主軸殼體4中的主軸6、固定於主軸6的前端的輪座8，及拆卸自如地配置於輪座8上的磨削輪10。磨削輪10是由環狀的輪基台12，與在輪基台12的下端外周部貼附成環狀的複數個磨削磨石14所構成。
在凹部形成步驟中，是以磨削裝置的工作夾台16 吸引保持基板13，並於將工作夾台16朝箭頭A所示的方向以例如300rpm旋轉時，使磨削輪10朝箭頭B所示方向以例如6000rpm旋轉，並且驅動未圖示之磨削單元進給機構使磨削磨石14接觸於基板13。然後以預定的磨削進給速度將磨削輪10朝下方磨削進給預定量。
其結果，在基板13上，將對應於晶圓25之元件區 域31的區域磨削去除而形成圓形凹部15，並且使對應於晶圓25之外周剩餘區域33的區域殘存下來。
在凹部形成步驟實施後或實施前，實施環狀溝形成步驟，其為以切削刀在對應於貼附於支撐板11的晶圓25之外周剩餘區域33的基板13之區域上形成環狀溝。
環狀溝形成步驟是如圖3所示，是利用切削裝置的切削單元18實施。磨削單元18包含有受到旋轉驅動的主軸20，以及裝設於主軸20的前端部的切削刀22。較理想的是，切削刀22是整體都由刀刃構成的墊圈狀刀片。
在環狀溝形成步驟中，是以切削裝置的工作夾台24吸引保持已形成凹部15的基板13，並使朝箭頭R1方向高速旋轉的切削刀22以預定深度切入基板13之外周部，並藉由以低速使工作夾台24朝箭頭R2方向旋轉，以如圖4所示，在基板13之外周部形成上表面及其中一側面開放的環狀溝17。此環狀溝17的形成，也可用磨削輪代替切削刀22來形成。
至少在實施凹部形成步驟之後，如圖4所示，實施將柔軟構件19填充至基板13之凹部15的柔軟構件填充步驟。柔軟構件19宜為例如對晶圓具有附著性或黏力(tack force)，但是沒有黏著性的構件。可採用例如橡膠或海綿橡膠之類的彈性構件。
將柔軟構件19填充至基板13之凹部15中之後，也可以利用例如刀具切削裝置切削柔軟構件19之表面以形成平坦化。此時，如圖1(A)所示，是將柔軟構件19之表面設 定成比基板13之表面還高出h1。
接著，參照圖5至圖10說明使用圖1(A)所示之支 撐板11的晶圓之加工方法。首先，實施接著劑注入步驟，將接著劑23注入至支撐板11之環狀溝17中。
此接著劑注入步驟是如圖5所示，以未圖示之工 作夾台吸引保持支撐板11，一邊緩慢地旋轉支撐板11一邊從接著劑供給噴嘴26對環狀溝17供給接著劑，以在環狀溝17全周注入接著劑23。
接著劑23的注入可以對環狀溝17的全周連續地 注入，也可以做成不連續地注入。此外，也可將事先形成為對應於環狀溝的尺寸的片狀之接著劑配置於環狀溝中。
接著，參照圖6，說明貼附於支撐板11上的半導 體晶圓(以下有時會簡稱為晶圓)25。半導體晶圓25是由例如厚度為700μm的矽晶圓所形成，且在表面25a上將複數條切割道(分割預定線)27形成為格子狀，並且在藉由複數條切割道27所劃分的各個區域中形成有IC、LSI等元件29。
如此所構成的晶圓25於其表面25a具備形成有元 件29的元件區域31，以及圍繞元件區域31的外周剩餘區域33。又，晶圓25的外周形成有圓弧狀的倒角部25e。
實施圖5所示之接著劑注入步驟後，如圖7所示， 實施貼附步驟，其為利用配置於支撐板11之環狀溝17中的接著劑23將晶圓25貼附於支撐板11，以使晶圓25之元件區域31抵接於柔軟構件19。晶圓25只以外周部分貼附於支撐板11。
實施貼附步驟之後，實施加工步驟，其為透過支 撐板11保持晶圓25，並對晶圓25施行加工。加工步驟包含如圖8所示之磨削步驟。參照圖8來說明磨削步驟。
在圖8中，磨削裝置之磨削單元28，包括受到旋 轉驅動的轉軸30、固定於轉軸30前端的輪座32、藉由複數個螺絲35可拆卸地裝設於輪座32上的磨削輪34。磨削輪34是由環狀的輪基台36，以及於輪基台36之下端外周部固接成環狀的複數個磨削磨石38所構成。
在磨削步驟中，是以磨削裝置之工作夾台40吸引 保持支撐板11，使晶圓25之背面25b露出。然後，一邊將工作夾台40朝箭頭a所示之方向以例如300rpm旋轉，一邊使磨削輪34朝箭頭b所示之方向以例如6000rpm旋轉，並且驅動未圖示之磨削單元進給機構，以使磨削輪34之磨削磨石38接觸於晶圓25之背面25b。
接著以預定之磨削進給速度將磨削輪34往下方 磨削進給預定量。一邊以接觸式或非接觸式的厚度量測計來測量晶圓25的厚度一邊將晶圓25磨削至預定厚度，例如100μm。
在此，加工步驟並不限定於圖8所示之磨削步驟， 也可包含例如以雷射加工裝置之工作夾台吸引保持支撐版11，並從晶圓25之背面25b側照射對晶圓25具有穿透性之波長的雷射光束，以在晶圓25之內部形成改質層的雷射加工步驟等。
實施圖8所示之磨削步驟之後，如圖9(A)所示， 實施接著劑去除步驟，其為使朝箭頭R1方向高速旋轉的切削刀22切入對應於支撐板11之環狀溝17的區域，並朝箭頭R2方向以低速旋轉工作夾台24以去除接著劑23。
此接著劑去除步驟也可使用如圖9(B)所示之切 削單元18A來實施。切削單元18A包含有在垂直方向上伸長的主軸20A，以及裝設於主軸20A之下端部的切削刀22。
在本實施形態之接著劑去除步驟中，是藉由往箭 頭A方向移動朝箭頭R3方向高速旋轉的切削刀22，而使切削刀22從側邊切入對應於支撐板13之環狀溝17的區域，並朝箭頭R2方向以低速旋轉工作夾台24，以去除接著劑23。
參照圖10，所示為接著劑去除步驟之其他實施形 態。在本實施形態中，是去除注入於圖1(B)所示之第2實施形態的支撐板11A之環狀溝21中的接著劑23。
也就是說，一邊使厚度較薄的切削刀22A朝箭頭 R1方向高速旋轉一邊使其切入對應於支撐板11A之環狀溝21的區域，並朝箭頭R2方向以低速旋轉工作夾台24，以去除環狀溝21中之接著劑23。
在圖9及圖10所示之實施形態中，雖然是以切削 刀來實施接著劑去除步驟，但接著劑去除步驟並不限定於此，也可以用磨削輪或雷射光束去除接著劑。

Claims (6)

  1. 一種晶圓之加工方法，前述晶圓在表面具有：形成有複數個元件之元件區域、及圍繞前述元件區域之外周剩餘區域，前述晶圓之加工方法包含下述步驟：支撐板準備步驟，準備包括有基板及軟性構件的支撐板，前述基板是在對應於被貼附在前述支撐板之前述晶圓之前述元件區域的表面區域上形成凹部，並且在對應於前述晶圓之前述外周剩餘區域的區域形成環狀溝，前述軟性構件是填充於前述基板之前述凹部；接著劑注入步驟，將接著劑注入至前述支撐板之前述環狀溝；貼附步驟，在實施前述接著劑注入步驟後，透過前述接著劑而將前述晶圓貼附到前述支撐板上，以使前述晶圓之前述元件區域抵接於前述柔軟構件；加工步驟，在實施前述貼附步驟之後，透過前述支撐板保持前述晶圓並對前述晶圓施行加工；及接著劑去除步驟，在實施前述加工步驟之後，使切削刀切入對應於前述支撐板之前述環狀溝的區域，並去除前述接著劑，其中，前述接著劑去除步驟包括如下步驟：當使前述晶圓繞著在垂直方向上伸長之主軸旋轉時，使前述切削刀繞著在垂直方向上伸長之刀主軸旋轉。
  2. 如請求項1之晶圓之加工方法，其中前述晶圓包括前述表 面及背面，且前述元件形成於前述晶圓之前述表面上，前述貼附步驟包含以下步驟：以前述表面面向前述支撐板的方式將前述晶圓貼附到前述支撐板，以使前述接著劑接觸前述晶圓之外周剩餘區域。
  3. 如請求項1之晶圓之加工方法，其更進一步具有軟性構件平坦化步驟，是將前述軟性構件之表面切削以使前述軟性構件之前述表面平坦化。
  4. 一種晶圓之加工方法，前述晶圓在表面具有：形成有複數個元件之元件區域、及圍繞前述元件區域之外周剩餘區域，前述晶圓之加工方法包含下述步驟：支撐板準備步驟，準備包括有基板及軟性構件的支撐板，前述基板是在對應於被貼附在前述支撐板之前述晶圓之前述元件區域的表面區域上形成凹部，並且在對應於前述晶圓之前述外周剩餘區域的區域形成環狀溝，前述軟性構件是填充於前述基板之前述凹部；接著劑注入步驟，將接著劑注入至前述支撐板之環狀溝；貼附步驟，在實施前述接著劑注入步驟後，透過前述接著劑而將前述晶圓貼附到前述支撐板上，以使前述晶圓之前述元件區域抵接於前述柔軟構件；加工步驟，在實施前述貼附步驟之後，透過前述支撐板保持前述晶圓並對前述晶圓施行加工；及接著劑去除步驟，在實施前述加工步驟之後，使切削刀切入對應於前述支撐板之前述環狀溝的區域，並去 除前述接著劑，其中，前述接著劑去除步驟包含如下步驟：當使前述晶圓繞著在垂直方向上伸長之主軸旋轉時，使前述切削刀繞著在水平方向上伸長之刀主軸旋轉，其中，前述切削刀具有較薄的厚度而可僅切進對應於前述環狀溝的區域，而不會切進前述晶圓或前述支撐板的外部周圍邊緣。
  5. 如請求項4之晶圓之加工方法，其中前述晶圓包括前述表面及背面，且前述元件形成於前述晶圓之前述表面上，前述貼附步驟包含以下步驟：以前述表面面向前述支撐板的方式將前述晶圓貼附到前述支撐板，以使前述接著劑接觸前述晶圓之外周剩餘區域。
  6. 如請求項4之晶圓之加工方法，其更進一步具有軟性構件平坦化步驟，是將前述軟性構件的表面切削以使前述軟性構件之前述表面平坦化。
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