JP2015015371A - 発光装置 - Google Patents
発光装置 Download PDFInfo
- Publication number
- JP2015015371A JP2015015371A JP2013141326A JP2013141326A JP2015015371A JP 2015015371 A JP2015015371 A JP 2015015371A JP 2013141326 A JP2013141326 A JP 2013141326A JP 2013141326 A JP2013141326 A JP 2013141326A JP 2015015371 A JP2015015371 A JP 2015015371A
- Authority
- JP
- Japan
- Prior art keywords
- phosphor
- light emitting
- emitting element
- light
- emitting device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229920005989 resin Polymers 0.000 claims abstract description 45
- 239000011347 resin Substances 0.000 claims abstract description 45
- 238000010521 absorption reaction Methods 0.000 claims abstract description 10
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 197
- 238000007789 sealing Methods 0.000 claims description 35
- 230000005484 gravity Effects 0.000 claims description 16
- 230000008021 deposition Effects 0.000 claims description 2
- 238000005538 encapsulation Methods 0.000 abstract 3
- 238000010586 diagram Methods 0.000 description 12
- 239000000463 material Substances 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 7
- -1 alkaline earth metal Lanthanoid Chemical class 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 5
- 239000003822 epoxy resin Substances 0.000 description 5
- 229920000647 polyepoxide Polymers 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 229920002050 silicone resin Polymers 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 150000001342 alkaline earth metals Chemical class 0.000 description 4
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 4
- 229910052747 lanthanoid Inorganic materials 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- RLMMPAFGVXFLEB-UHFFFAOYSA-N O[Si](O)(O)Cl.P Chemical compound O[Si](O)(O)Cl.P RLMMPAFGVXFLEB-UHFFFAOYSA-N 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 150000002602 lanthanoids Chemical class 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229920001187 thermosetting polymer Polymers 0.000 description 3
- 239000004734 Polyphenylene sulfide Substances 0.000 description 2
- 239000004954 Polyphthalamide Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052863 mullite Inorganic materials 0.000 description 2
- 229920000069 polyphenylene sulfide Polymers 0.000 description 2
- 229920006375 polyphtalamide Polymers 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 239000011342 resin composition Substances 0.000 description 2
- 238000004062 sedimentation Methods 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229920000106 Liquid crystal polymer Polymers 0.000 description 1
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- PHXNQAYVSHPINV-UHFFFAOYSA-N P.OB(O)O Chemical compound P.OB(O)O PHXNQAYVSHPINV-UHFFFAOYSA-N 0.000 description 1
- 229920001807 Urea-formaldehyde Polymers 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052915 alkaline earth metal silicate Inorganic materials 0.000 description 1
- 150000004645 aluminates Chemical class 0.000 description 1
- 229910052586 apatite Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- GTDCAOYDHVNFCP-UHFFFAOYSA-N chloro(trihydroxy)silane Chemical compound O[Si](O)(O)Cl GTDCAOYDHVNFCP-UHFFFAOYSA-N 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- VSIIXMUUUJUKCM-UHFFFAOYSA-D pentacalcium;fluoride;triphosphate Chemical compound [F-].[Ca+2].[Ca+2].[Ca+2].[Ca+2].[Ca+2].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O VSIIXMUUUJUKCM-UHFFFAOYSA-D 0.000 description 1
- 238000004382 potting Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
Description
図1は、本発明の実施形態1に係る発光装置の概略構成を示す模式図である。
パッケージ10には、例えば、PPA(ポリフタルアミド)、PPS(ポリフェニレンサルファイド)、液晶ポリマー、またはナイロンなどの熱可塑性樹脂や、エポキシ樹脂、シリコーン樹脂、変性エポキシ樹脂、変性シリコーン樹脂、ウレタン樹脂、またはアクリレート樹脂などの熱硬化性樹脂を用いることができるほか、ガラスエポキシ樹脂、セラミックス、ガラスなどを用いることができる。なお、セラミックスとしては、アルミナ、窒化アルミニウム、ムライト、炭化ケイ素あるいは窒化ケイ素などを用いることが好ましい。特に、高反射で安価なアルミナとムライトが好ましい。
発光素子20には、例えば、発光ダイオードを用いることができる。発光ダイオードには、例えば、絶縁性且つ透光性の成長用基板(例:サファイア基板)と、この成長用基板上に形成された活性層を含む積層構造と、を備えたものを用いることができる。なお、活性層を含む積層構造は、種々の半導体(例:InN、AlN、GaN、InGaN、AlGaN、InGaAlNなどの窒化物半導体、III−V族化合物半導体、II−VI族化合物半導体)によって形成することができる。
透光性部材30には、発光素子20からの光を透過する性質を有する部材を用いる。透過の程度は特に限定されないが、透光性部材30には、例えば、発光素子20から出射される光を100%透過させる部材のほか、70%程度以上、80%程度以上、90%程度以上、または95%程度以上透過させる性質を有する部材を用いることが好ましい。
封止樹脂40には、例えば、上述した透光性部材30と同様の材料を用いることができる。
第1蛍光体51は、透光性部材30に含まれており、第2蛍光体52は、封止樹脂40に含まれている。第2蛍光体52は、第1蛍光体51とは比重が異なる。第1蛍光体51または第2蛍光体52の一方の発光波長は、第1蛍光体51または第2蛍光体52の他方の吸収波長と重なっていてもよいし、重なっていなくてもよい。
図2は、本発明の実施形態2に係る発光装置の概略構成を示す模式図である。
透光性部材30は、パッケージ10の凹部開口X1に近接する高さを有する。これにより、発光素子20の上方に分布する第2蛍光体52の量が少なくなるため(あるいは0になるため)、第1蛍光体51から発せられる光が第2蛍光体52に反射される頻度が低下し、第1蛍光体51から発せられる光をパッケージ10の凹部開口X1から取り出し易くなる。
図3は、本発明の実施形態3に係る発光装置の概略構成を示す模式図である。
20 発光素子
21 発光素子
22 発光素子
30 透光性部材
31 透光性部材
32 透光性部材
40 封止樹脂
51 第1蛍光体
52 第2蛍光体
60 ワイヤ
X 凹部
X1 凹部開口
X2 凹部側壁
X3 凹部底面
Claims (11)
- 凹部を有するパッケージと、前記パッケージの凹部内に実装された発光素子と、前記発光素子の上方に設けられた透光性部材と、前記パッケージの凹部を封止する封止樹脂と、を備えた発光装置であって、
前記透光性部材に含まれた第1蛍光体と、
前記第1蛍光体とは比重が異なる前記封止樹脂に含まれた第2蛍光体と、
を備え、
前記第2蛍光体が前記発光素子の上方よりも前記発光素子の側方に多く分布するとともに、前記発光素子の側面が前記封止樹脂に対して露出していることを特徴する発光装置。 - 前記第1蛍光体または前記第2蛍光体の一方の発光波長が前記第1蛍光体または前記第2蛍光体の他方の吸収波長と重なっていることを特徴とする請求項1に記載の発光装置。
- 前記第2蛍光体は、前記パッケージの凹部底面に堆積していることを特徴とする請求項1または2に記載の発光装置。
- 前記第2蛍光体は、前記発光素子の活性層よりも低く堆積していることを特徴とする請求項3に記載の発光装置。
- 前記第2蛍光体は、前記発光素子の活性層よりも高く堆積していることを特徴とする請求項3に記載の発光装置。
- 前記透光性部材は、前記第2蛍光体の堆積を妨げる表面を有していることを特徴とする請求項1から5のいずれか1項に記載の発光装置。
- 前記透光性部材は、前記パッケージの凹部開口に対して凸となることを特徴とする請求項1から6のいずれか1項に記載の発光装置。
- 前記透光性部材は、前記パッケージの凹部開口に近接する高さを有することを特徴とする請求項1から7のいずれか1項に記載の発光装置。
- 前記透光性部材は、前記発光素子の上面に設けられていることを特徴とする請求項1から8のいずれか1項に記載の発光装置。
- 前記透光性部材は、前記発光素子の上面に貼り付けられていることを特徴とする請求項9に記載の発光装置。
- 前記第1蛍光体の発光波長は、前記第2蛍光体の発光波長よりも長いことを特徴とする請求項1から10のいずれか1項に記載の発光装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013141326A JP6291735B2 (ja) | 2013-07-05 | 2013-07-05 | 発光装置 |
US14/323,684 US9455382B2 (en) | 2013-07-05 | 2014-07-03 | Light emitting device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013141326A JP6291735B2 (ja) | 2013-07-05 | 2013-07-05 | 発光装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015015371A true JP2015015371A (ja) | 2015-01-22 |
JP6291735B2 JP6291735B2 (ja) | 2018-03-14 |
Family
ID=52132189
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013141326A Active JP6291735B2 (ja) | 2013-07-05 | 2013-07-05 | 発光装置 |
Country Status (2)
Country | Link |
---|---|
US (1) | US9455382B2 (ja) |
JP (1) | JP6291735B2 (ja) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018006562A (ja) * | 2016-06-30 | 2018-01-11 | 日亜化学工業株式会社 | 発光装置及びバックライト光源 |
JP2019036676A (ja) * | 2017-08-21 | 2019-03-07 | シチズン電子株式会社 | 発光装置 |
KR20190038452A (ko) * | 2017-09-29 | 2019-04-08 | 니치아 카가쿠 고교 가부시키가이샤 | 발광 장치 |
JP2019102796A (ja) * | 2017-11-28 | 2019-06-24 | 日亜化学工業株式会社 | 発光装置 |
JP2019212699A (ja) * | 2018-06-01 | 2019-12-12 | 日亜化学工業株式会社 | 発光装置 |
JP2020129691A (ja) * | 2017-09-29 | 2020-08-27 | 日亜化学工業株式会社 | 発光装置 |
JP2020167266A (ja) * | 2019-03-29 | 2020-10-08 | 日亜化学工業株式会社 | 発光装置 |
US10950764B2 (en) | 2017-11-28 | 2021-03-16 | Nichia Corporation | Light-emitting device |
JP2021106184A (ja) * | 2019-12-26 | 2021-07-26 | 日亜化学工業株式会社 | 発光装置 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20150116986A (ko) * | 2014-04-08 | 2015-10-19 | 삼성디스플레이 주식회사 | 퀀텀 도트 시트 및 이를 포함하는 라이트 유닛과 액정 표시 장치 |
JP6668996B2 (ja) | 2016-07-29 | 2020-03-18 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
DE102017107834A1 (de) * | 2017-04-11 | 2018-10-11 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes bauelement |
WO2019120309A1 (zh) * | 2017-12-22 | 2019-06-27 | 海迪科(南通)光电科技有限公司 | 一种晶圆级芯片级csp封装结构及其制备方法 |
EP3617291B1 (en) * | 2018-08-27 | 2022-06-22 | Nichia Corporation | Method of manufacturing light emitting device |
Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005244075A (ja) * | 2004-02-27 | 2005-09-08 | Matsushita Electric Works Ltd | 発光装置 |
JP2007103512A (ja) * | 2005-09-30 | 2007-04-19 | Kyocera Corp | 発光装置 |
JP2007214579A (ja) * | 2006-01-16 | 2007-08-23 | Philips Lumileds Lightng Co Llc | 蛍光体変換発光デバイス |
JP2008159708A (ja) * | 2006-12-21 | 2008-07-10 | Matsushita Electric Works Ltd | 発光装置 |
JP2009506557A (ja) * | 2005-08-30 | 2009-02-12 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | オプトエレクトロニクスデバイス |
WO2009093427A1 (ja) * | 2008-01-21 | 2009-07-30 | Nichia Corporation | 発光装置 |
JP2010050404A (ja) * | 2008-08-25 | 2010-03-04 | Citizen Electronics Co Ltd | 発光装置 |
JP2010538453A (ja) * | 2007-08-31 | 2010-12-09 | エルジー イノテック カンパニー リミテッド | 発光デバイスパッケージ |
JP2012089539A (ja) * | 2010-10-15 | 2012-05-10 | Nichia Chem Ind Ltd | 発光装置及びその製造方法 |
JP2012114416A (ja) * | 2010-11-05 | 2012-06-14 | Nichia Chem Ind Ltd | 発光装置及びその製造方法 |
CN103996787A (zh) * | 2014-02-19 | 2014-08-20 | 浙江英特来光电科技有限公司 | 一种高显指高光效白光led结构 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5138145B2 (ja) | 2002-11-12 | 2013-02-06 | 日亜化学工業株式会社 | 蛍光体積層構造及びそれを用いる光源 |
JP4389126B2 (ja) | 2004-10-04 | 2009-12-24 | スタンレー電気株式会社 | 半導体発光装置及びその製造方法 |
DE102005046420B4 (de) * | 2004-10-04 | 2019-07-11 | Stanley Electric Co. Ltd. | Verfahren zur Herstellung einer Licht emittierenden Halbleitervorrichtung |
JP5694875B2 (ja) | 2005-02-23 | 2015-04-01 | 三菱化学株式会社 | 半導体発光デバイス用部材及びその製造方法、並びにそれを用いた半導体発光デバイス |
TWI255566B (en) * | 2005-03-04 | 2006-05-21 | Jemitek Electronics Corp | Led |
US7847302B2 (en) * | 2005-08-26 | 2010-12-07 | Koninklijke Philips Electronics, N.V. | Blue LED with phosphor layer for producing white light and different phosphor in outer lens for reducing color temperature |
JP5540466B2 (ja) | 2008-01-19 | 2014-07-02 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
US8547009B2 (en) * | 2009-07-10 | 2013-10-01 | Cree, Inc. | Lighting structures including diffuser particles comprising phosphor host materials |
US8330178B2 (en) * | 2010-05-11 | 2012-12-11 | Advanced Semiconductor Engineering, Inc. | Package structure and package process of light emitting diode |
JP2011249476A (ja) | 2010-05-25 | 2011-12-08 | Kyocera Corp | 半導体発光装置 |
JP5569389B2 (ja) | 2010-12-28 | 2014-08-13 | 日亜化学工業株式会社 | 発光装置の製造方法及び発光装置 |
US8541802B2 (en) * | 2012-01-31 | 2013-09-24 | Bridgelux, Inc. | Phosphor placement in white light emitting diode assemblies |
US8637887B2 (en) * | 2012-05-08 | 2014-01-28 | Advanced Semiconductor Engineering, Inc. | Thermally enhanced semiconductor packages and related methods |
JP6107475B2 (ja) * | 2013-06-28 | 2017-04-05 | 日亜化学工業株式会社 | 発光装置 |
-
2013
- 2013-07-05 JP JP2013141326A patent/JP6291735B2/ja active Active
-
2014
- 2014-07-03 US US14/323,684 patent/US9455382B2/en active Active
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005244075A (ja) * | 2004-02-27 | 2005-09-08 | Matsushita Electric Works Ltd | 発光装置 |
JP2009506557A (ja) * | 2005-08-30 | 2009-02-12 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | オプトエレクトロニクスデバイス |
JP2007103512A (ja) * | 2005-09-30 | 2007-04-19 | Kyocera Corp | 発光装置 |
JP2007214579A (ja) * | 2006-01-16 | 2007-08-23 | Philips Lumileds Lightng Co Llc | 蛍光体変換発光デバイス |
JP2008159708A (ja) * | 2006-12-21 | 2008-07-10 | Matsushita Electric Works Ltd | 発光装置 |
JP2010538453A (ja) * | 2007-08-31 | 2010-12-09 | エルジー イノテック カンパニー リミテッド | 発光デバイスパッケージ |
WO2009093427A1 (ja) * | 2008-01-21 | 2009-07-30 | Nichia Corporation | 発光装置 |
JP2010050404A (ja) * | 2008-08-25 | 2010-03-04 | Citizen Electronics Co Ltd | 発光装置 |
JP2012089539A (ja) * | 2010-10-15 | 2012-05-10 | Nichia Chem Ind Ltd | 発光装置及びその製造方法 |
JP2012114416A (ja) * | 2010-11-05 | 2012-06-14 | Nichia Chem Ind Ltd | 発光装置及びその製造方法 |
CN103996787A (zh) * | 2014-02-19 | 2014-08-20 | 浙江英特来光电科技有限公司 | 一种高显指高光效白光led结构 |
Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018006562A (ja) * | 2016-06-30 | 2018-01-11 | 日亜化学工業株式会社 | 発光装置及びバックライト光源 |
US11168865B2 (en) | 2016-06-30 | 2021-11-09 | Nichia Corporation | Light-emitting device and backlight |
JP7092474B2 (ja) | 2017-08-21 | 2022-06-28 | シチズン電子株式会社 | 発光装置 |
JP2019036676A (ja) * | 2017-08-21 | 2019-03-07 | シチズン電子株式会社 | 発光装置 |
KR20190038452A (ko) * | 2017-09-29 | 2019-04-08 | 니치아 카가쿠 고교 가부시키가이샤 | 발광 장치 |
JP2020129691A (ja) * | 2017-09-29 | 2020-08-27 | 日亜化学工業株式会社 | 発光装置 |
KR102638560B1 (ko) | 2017-09-29 | 2024-02-19 | 니치아 카가쿠 고교 가부시키가이샤 | 발광 장치 |
JP7096504B2 (ja) | 2017-09-29 | 2022-07-06 | 日亜化学工業株式会社 | 発光装置 |
US11257990B2 (en) | 2017-09-29 | 2022-02-22 | Nichia Corporation | Light emitting device |
JP2019102796A (ja) * | 2017-11-28 | 2019-06-24 | 日亜化学工業株式会社 | 発光装置 |
US10950764B2 (en) | 2017-11-28 | 2021-03-16 | Nichia Corporation | Light-emitting device |
JP2019212699A (ja) * | 2018-06-01 | 2019-12-12 | 日亜化学工業株式会社 | 発光装置 |
JP7100246B2 (ja) | 2018-06-01 | 2022-07-13 | 日亜化学工業株式会社 | 発光装置 |
JP7227482B2 (ja) | 2019-03-29 | 2023-02-22 | 日亜化学工業株式会社 | 発光装置 |
JP2020167266A (ja) * | 2019-03-29 | 2020-10-08 | 日亜化学工業株式会社 | 発光装置 |
JP2021106184A (ja) * | 2019-12-26 | 2021-07-26 | 日亜化学工業株式会社 | 発光装置 |
JP7481610B2 (ja) | 2019-12-26 | 2024-05-13 | 日亜化学工業株式会社 | 発光装置 |
Also Published As
Publication number | Publication date |
---|---|
US9455382B2 (en) | 2016-09-27 |
JP6291735B2 (ja) | 2018-03-14 |
US20150008464A1 (en) | 2015-01-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6291735B2 (ja) | 発光装置 | |
US11254077B2 (en) | Light emitting device and method for manufacturing the same | |
US11201271B2 (en) | Method for manufacturing light emitting device including first and second reflectors | |
JP6107475B2 (ja) | 発光装置 | |
US10615315B2 (en) | Light emitting device | |
US7939843B2 (en) | Light emitting device and high refractive index layer | |
JP6291734B2 (ja) | 発光装置 | |
JP6256026B2 (ja) | 発光装置及び発光装置の製造方法 | |
JP2015220446A (ja) | 発光装置及びその製造方法 | |
JP2012216712A (ja) | 発光ダイオード装置の製造方法および発光ダイオード素子 | |
JP6724634B2 (ja) | 発光装置の製造方法 | |
JP2019176081A (ja) | 発光装置およびその製造方法 | |
JP2016119402A (ja) | 発光装置の製造方法 | |
JP2013140892A (ja) | 発光装置及び発光装置の製造方法 | |
JP6822526B2 (ja) | 発光装置とその製造方法 | |
JP2014082525A (ja) | 発光装置及びその製造方法 | |
JP6597135B2 (ja) | 発光装置 | |
JP2014075571A (ja) | 発光装置及びその製造方法 | |
JP6521119B2 (ja) | 発光装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20160524 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20170215 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20170228 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170426 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20170905 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20171204 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20171211 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20180116 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20180129 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6291735 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |