JP2015014786A - 順序回路、半導体装置 - Google Patents
順序回路、半導体装置 Download PDFInfo
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- JP2015014786A JP2015014786A JP2014107682A JP2014107682A JP2015014786A JP 2015014786 A JP2015014786 A JP 2015014786A JP 2014107682 A JP2014107682 A JP 2014107682A JP 2014107682 A JP2014107682 A JP 2014107682A JP 2015014786 A JP2015014786 A JP 2015014786A
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- transistor
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- conductive film
- oxide semiconductor
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 405
- 239000004973 liquid crystal related substance Substances 0.000 claims abstract description 88
- 150000004767 nitrides Chemical class 0.000 claims abstract description 55
- 239000003990 capacitor Substances 0.000 claims abstract description 30
- 230000005684 electric field Effects 0.000 claims abstract description 12
- 230000015572 biosynthetic process Effects 0.000 claims description 27
- 238000005530 etching Methods 0.000 claims description 20
- 229910052738 indium Inorganic materials 0.000 claims description 12
- 229910052733 gallium Inorganic materials 0.000 claims description 8
- 229910052725 zinc Inorganic materials 0.000 claims description 6
- 239000000758 substrate Substances 0.000 description 91
- 239000000872 buffer Substances 0.000 description 78
- 229910044991 metal oxide Inorganic materials 0.000 description 73
- 150000004706 metal oxides Chemical class 0.000 description 73
- 239000011701 zinc Substances 0.000 description 53
- 229910052760 oxygen Inorganic materials 0.000 description 50
- 239000001301 oxygen Substances 0.000 description 50
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 49
- 239000010410 layer Substances 0.000 description 44
- 239000007789 gas Substances 0.000 description 40
- 230000005669 field effect Effects 0.000 description 33
- 238000004364 calculation method Methods 0.000 description 31
- 239000013078 crystal Substances 0.000 description 30
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 29
- 238000012545 processing Methods 0.000 description 29
- 229910052710 silicon Inorganic materials 0.000 description 29
- 239000010703 silicon Substances 0.000 description 29
- 229910052581 Si3N4 Inorganic materials 0.000 description 28
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 28
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 24
- 230000009977 dual effect Effects 0.000 description 24
- 229910052751 metal Inorganic materials 0.000 description 23
- 230000001681 protective effect Effects 0.000 description 23
- 229910052814 silicon oxide Inorganic materials 0.000 description 23
- 238000000034 method Methods 0.000 description 22
- 102100040862 Dual specificity protein kinase CLK1 Human genes 0.000 description 19
- 101000749294 Homo sapiens Dual specificity protein kinase CLK1 Proteins 0.000 description 19
- 238000010438 heat treatment Methods 0.000 description 19
- 239000002184 metal Substances 0.000 description 19
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 19
- 239000012535 impurity Substances 0.000 description 17
- 238000005259 measurement Methods 0.000 description 17
- 239000011347 resin Substances 0.000 description 17
- 229920005989 resin Polymers 0.000 description 17
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 15
- 239000001257 hydrogen Substances 0.000 description 15
- 229910052739 hydrogen Inorganic materials 0.000 description 15
- 229910000077 silane Inorganic materials 0.000 description 15
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 14
- 125000004429 atom Chemical group 0.000 description 13
- 230000007423 decrease Effects 0.000 description 13
- 229910052721 tungsten Inorganic materials 0.000 description 13
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 12
- 229910052757 nitrogen Inorganic materials 0.000 description 12
- 238000004544 sputter deposition Methods 0.000 description 12
- 239000010937 tungsten Substances 0.000 description 12
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 11
- 230000000694 effects Effects 0.000 description 11
- 239000000463 material Substances 0.000 description 11
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 11
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 10
- 238000009826 distribution Methods 0.000 description 10
- 239000002245 particle Substances 0.000 description 10
- 230000008859 change Effects 0.000 description 9
- 102100040856 Dual specificity protein kinase CLK3 Human genes 0.000 description 8
- 102100040858 Dual specificity protein kinase CLK4 Human genes 0.000 description 8
- 101000749304 Homo sapiens Dual specificity protein kinase CLK3 Proteins 0.000 description 8
- 101000749298 Homo sapiens Dual specificity protein kinase CLK4 Proteins 0.000 description 8
- 239000000203 mixture Substances 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 102100040844 Dual specificity protein kinase CLK2 Human genes 0.000 description 7
- 101000749291 Homo sapiens Dual specificity protein kinase CLK2 Proteins 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 7
- 229960001730 nitrous oxide Drugs 0.000 description 7
- 235000013842 nitrous oxide Nutrition 0.000 description 7
- 239000000843 powder Substances 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 239000012298 atmosphere Substances 0.000 description 6
- 239000000969 carrier Substances 0.000 description 6
- -1 chlorine radicals Chemical class 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 6
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 6
- 239000002356 single layer Substances 0.000 description 6
- 239000003381 stabilizer Substances 0.000 description 6
- 208000005156 Dehydration Diseases 0.000 description 5
- 229910052783 alkali metal Inorganic materials 0.000 description 5
- 150000001340 alkali metals Chemical class 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- 230000018044 dehydration Effects 0.000 description 5
- 238000006297 dehydration reaction Methods 0.000 description 5
- 238000006356 dehydrogenation reaction Methods 0.000 description 5
- 230000006872 improvement Effects 0.000 description 5
- 230000003071 parasitic effect Effects 0.000 description 5
- 238000004088 simulation Methods 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 238000002834 transmittance Methods 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 229910001868 water Inorganic materials 0.000 description 5
- 239000011787 zinc oxide Substances 0.000 description 5
- 239000004983 Polymer Dispersed Liquid Crystal Substances 0.000 description 4
- 229910020994 Sn-Zn Inorganic materials 0.000 description 4
- 229910009069 Sn—Zn Inorganic materials 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 4
- 150000001342 alkaline earth metals Chemical class 0.000 description 4
- 229910021529 ammonia Inorganic materials 0.000 description 4
- 239000000470 constituent Substances 0.000 description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 4
- 238000010893 electron trap Methods 0.000 description 4
- 229910001195 gallium oxide Inorganic materials 0.000 description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 239000003566 sealing material Substances 0.000 description 4
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 4
- 229910018137 Al-Zn Inorganic materials 0.000 description 3
- 229910018573 Al—Zn Inorganic materials 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052684 Cerium Inorganic materials 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 229910001882 dioxygen Inorganic materials 0.000 description 3
- 239000005262 ferroelectric liquid crystals (FLCs) Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910003437 indium oxide Inorganic materials 0.000 description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 3
- 229910052746 lanthanum Inorganic materials 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- 230000000704 physical effect Effects 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910052726 zirconium Inorganic materials 0.000 description 3
- WZJUBBHODHNQPW-UHFFFAOYSA-N 2,4,6,8-tetramethyl-1,3,5,7,2$l^{3},4$l^{3},6$l^{3},8$l^{3}-tetraoxatetrasilocane Chemical compound C[Si]1O[Si](C)O[Si](C)O[Si](C)O1 WZJUBBHODHNQPW-UHFFFAOYSA-N 0.000 description 2
- UWCWUCKPEYNDNV-LBPRGKRZSA-N 2,6-dimethyl-n-[[(2s)-pyrrolidin-2-yl]methyl]aniline Chemical compound CC1=CC=CC(C)=C1NC[C@H]1NCCC1 UWCWUCKPEYNDNV-LBPRGKRZSA-N 0.000 description 2
- 229910018120 Al-Ga-Zn Inorganic materials 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 239000004986 Cholesteric liquid crystals (ChLC) Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 239000005264 High molar mass liquid crystal Substances 0.000 description 2
- 206010021143 Hypoxia Diseases 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910020833 Sn-Al-Zn Inorganic materials 0.000 description 2
- 229910020868 Sn-Ga-Zn Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 230000005281 excited state Effects 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- 230000005283 ground state Effects 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- PLDDOISOJJCEMH-UHFFFAOYSA-N neodymium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Nd+3].[Nd+3] PLDDOISOJJCEMH-UHFFFAOYSA-N 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 2
- HMMGMWAXVFQUOA-UHFFFAOYSA-N octamethylcyclotetrasiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O1 HMMGMWAXVFQUOA-UHFFFAOYSA-N 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 229910001930 tungsten oxide Inorganic materials 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 239000004985 Discotic Liquid Crystal Substance Substances 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 238000004435 EPR spectroscopy Methods 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- 239000004976 Lyotropic liquid crystal Substances 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000004988 Nematic liquid crystal Substances 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000004990 Smectic liquid crystal Substances 0.000 description 1
- 229910020944 Sn-Mg Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 239000004974 Thermotropic liquid crystal Substances 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 229910009369 Zn Mg Inorganic materials 0.000 description 1
- 229910007573 Zn-Mg Inorganic materials 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 230000003098 cholesteric effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 1
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 239000005267 main chain polymer Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 150000001282 organosilanes Chemical class 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000006213 oxygenation reaction Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000005266 side chain polymer Substances 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 238000012916 structural analysis Methods 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- FRNOGLGSGLTDKL-UHFFFAOYSA-N thulium atom Chemical compound [Tm] FRNOGLGSGLTDKL-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 description 1
- VEDJZFSRVVQBIL-UHFFFAOYSA-N trisilane Chemical compound [SiH3][SiH2][SiH3] VEDJZFSRVVQBIL-UHFFFAOYSA-N 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133345—Insulating layers
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
-
- G—PHYSICS
- G02—OPTICS
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/13624—Active matrix addressed cells having more than one switching element per pixel
-
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- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
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- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
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- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
- G02F1/13685—Top gates
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
- H01L29/78648—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate arranged on opposing sides of the channel
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- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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Abstract
Description
図1(A)に、本発明の一態様にかかる順序回路の構成を一例として示す。図1(A)に示す順序回路10は、回路11と、トランジスタ12と、トランジスタ13とを有する。回路11は、信号LIN及び信号RINの電位に従って、トランジスタ12のゲートとトランジスタ13のゲートの電位を制御する機能を有する。
次いで、図1に示したトランジスタ12、トランジスタ14乃至トランジスタ17として用いることができる、電気的に接続された一対のゲート電極を有するトランジスタ20の具体的な構成例を、図2に示す。図2(A)には、トランジスタ20の上面図を示す。なお、図2(A)では、トランジスタ20のレイアウトを明確にするために、ゲート絶縁膜などの各種の絶縁膜を省略している。また、図2(A)に示した上面図の、破線A1−A2における断面図を図2(B)に示し、破線A3−A4における断面図を図2(C)に示す。
次いで、酸化物半導体膜にチャネル形成領域を有するトランジスタに光を照射したときの、トランジスタの電気的特性を測定した結果について述べる。
ここで、チャネルエッチ型のトランジスタ及びチャネル保護型のトランジスタ、それぞれの電界効果移動度及びオン電流について比較する。なお、ここでは、酸化物半導体膜を挟んで対向するゲート電極が接続され、同電位であるDual Gate駆動のトランジスタの電界効果移動度(μFE)及びオン電流(Ion)について、比較する。
酸化物半導体膜を挟んで対向するゲート電極が接続し、同電位であるDual Gate駆動のトランジスタにおいて、チャネル長Lを小さくすることにより、電流駆動力が向上することについて説明する。
はじめに、界面準位や界面散乱などの効果を考慮しない、理想的なモデルについてシミュレーションで検討を行った。図30に、計算で用いたトランジスタのモデルを示す。なお、計算にはデバイスシミュレーションソフト Atlas(Silvaco社製)を用いた。
以下、理想的なモデルのトランジスタの飽和移動度において、低いゲート電圧でピークが生じる原因について説明する。
バルク電流が飽和移動度に影響することは、蓄積型のデバイスである酸化物半導体膜を有するトランジスタに特有の現象であり、半導体膜としてシリコン膜を有するトランジスタのような、反転型のデバイスではバルク電流の影響が少ない。
次に、実際のトランジスタの飽和移動度に近似させるために、理想的なモデルのトランジスタにおいて、ゲート絶縁膜GI_1及び酸化物半導体膜OSの界面に、電子をトラップすると負に帯電するアクセプタ型の準位、即ち浅い電子トラップ準位を仮定して計算した結果を図35に示す。
次いで、本発明の一態様にかかる半導体表示装置の構成例について説明する。
次いで、図6(A)に示した半導体表示装置70の一つである液晶表示装置を例に挙げて、画素55の構成例について説明する。図4に、図2に示したトランジスタ20と共に基板31上に形成された画素55の上面図を、一例として示す。なお、図4では、画素55のレイアウトを明確にするために、各種の絶縁膜を省略している。また、図4に示す画素55を有する素子基板を用いて形成された液晶表示装置の断面図を、図5に示す。図5に示す液晶表示装置のうち、基板31を含む素子基板は、図4の破線B1−B2における断面図に相当する。
次いで、本発明の一態様にかかる順序回路の、図1とは異なる構成例について説明する。
なお、電子供与体(ドナー)となる水分または水素などの不純物が低減され、なおかつ酸素欠損が低減されることにより高純度化された酸化物半導体(purified Oxide Semiconductor)は、キャリア発生源が少ないため、i型(真性半導体)又はi型に限りなく近くすることができる。そのため、高純度化された酸化物半導体膜にチャネル形成領域を有するトランジスタは、オフ電流が著しく小さく、信頼性が高い。そして、当該酸化物半導体膜にチャネル形成領域が形成されるトランジスタは、閾値電圧がプラスとなる電気的特性(ノーマリーオフ特性ともいう。)になりやすい。
次いで、液晶表示装置を例に挙げて、本発明の一態様にかかる半導体表示装置の作製方法の一例について、図11乃至図14を用いて説明する。なお、図11乃至図14では、図5に示す、画素55が有するトランジスタ56と、図2に示す、駆動回路が有するトランジスタ20とを有する、素子基板の作製方法について説明する。
次いで、液晶表示装置を例に挙げて、本発明の一態様にかかる半導体表示装置の外観について、図15を用いて説明する。図15は、基板4001と基板4006とを封止材4005によって接着させた液晶表示装置の上面図である。また、図16は、図15の破線C1−C2における断面図に相当する。
本発明の一態様に係る半導体装置は、表示機器、パーソナルコンピュータ、記録媒体を備えた画像再生装置(代表的にはDVD:Digital Versatile Disc等の記録媒体を再生し、その画像を表示しうるディスプレイを有する装置)に用いることができる。その他に、本発明の一態様に係る半導体装置を用いることができる電子機器として、携帯電話、携帯型を含むゲーム機、携帯情報端末、電子書籍、ビデオカメラ、デジタルスチルカメラなどのカメラ、ゴーグル型ディスプレイ(ヘッドマウントディスプレイ)、ナビゲーションシステム、音響再生装置(カーオーディオ、デジタルオーディオプレイヤー等)、複写機、ファクシミリ、プリンター、プリンター複合機、現金自動預け入れ払い機(ATM)、自動販売機などが挙げられる。これら電子機器の具体例を図18に示す。
本実施例では、本発明の一態様である試料1、2と、比較用の試料3をそれぞれ作製した。より具体的には、本発明の一態様である試料1として、図2に示す構成に相当するトランジスタを作製した。また本発明の一態様である試料2として、図19に示す構成に相当するトランジスタを作製した。また比較用の試料3としては、図2に示す構成のうち、導電膜30を有さない構成に相当するトランジスタを作製した。
まず、基板としてガラス基板を用い、基板上にゲート電極を形成した。
試料2は試料1と比較し、保護膜及びバックゲート電極の構造が異なる。より具体的には、トランジスタのチャネル幅方向において、第1の酸化物絶縁膜及び第2の酸化物絶縁膜の側面をバックゲート電極が覆うような構成とした。
比較のための試料3は、試料1と比較し、バックゲート電極を有さない点で相違する構成とした。
次に、試料1乃至試料3のトランジスタの初期特性として、Vg−Id特性を測定した。本実施例では、基板温度を25℃とし、ソース−ドレイン間の電位差(以下、ドレイン電圧、Vdともいう)を1V、10Vとし、ソース−バックゲート電極間の電位差(以下、ゲート電圧、Vgともいう)を−15V乃至15Vまで変化させたときのソース−ドレイン間に流れる電流(以下、ドレイン電流、Idともいう)の変化特性、すなわちVg−Id特性を測定した。
10_DUM 順序回路
10_j 順序回路
10_j−1 順序回路
10_y 順序回路
10_1 順序回路
10_8m 順序回路
11 回路
12 トランジスタ
13 トランジスタ
14 トランジスタ
15 トランジスタ
16 トランジスタ
17 トランジスタ
20 トランジスタ
21 導電膜
22 絶縁膜
23 酸化物半導体膜
23a 酸化物半導体膜
23b 酸化物半導体膜
23c 酸化物半導体膜
24 導電膜
25 導電膜
26 絶縁膜
27 絶縁膜
28 窒化物絶縁膜
29 絶縁膜
30 導電膜
31 基板
32 開口部
32a 開口部
32b 開口部
34 導電膜
40 導電膜
41 酸化物半導体膜
42 金属酸化物膜
42a 酸化物半導体膜
43 導電膜
44 導電膜
45 導電膜
46 基板
47 遮蔽膜
48 着色層
50 樹脂膜
51 配向膜
52 配向膜
53 液晶層
55 画素
56 トランジスタ
57 容量素子
58 開口部
59 導電膜
60 液晶素子
61 導電膜
62 開口部
70 半導体表示装置
71 画素部
72 駆動回路
73 駆動回路
80 トランジスタ
81 トランジスタ
82 トランジスタ
83 トランジスタ
84 トランジスタ
85 トランジスタ
86 トランジスタ
90 バッファ
91 トランジスタ
92 トランジスタ
93 トランジスタ
95 トランジスタ
96 トランジスタ
97 容量素子
98 発光素子
4001 基板
4002 画素部
4003 駆動回路
4004 駆動回路
4005 封止材
4006 基板
4010 トランジスタ
4018 FPC
4020 絶縁膜
4021 画素電極
4023 液晶素子
4028 液晶層
4030 配線
4050 導電膜
4059 樹脂膜
4060 共通電極
4061 導電性粒子
4062 樹脂膜
5001 筐体
5002 筐体
5003 表示部
5004 表示部
5005 マイクロホン
5006 スピーカー
5007 操作キー
5008 スタイラス
5201 筐体
5202 表示部
5203 操作ボタン
5204 バンド
5401 筐体
5402 表示部
5403 キーボード
5404 ポインティングデバイス
5601 筐体
5602 筐体
5603 表示部
5604 表示部
5605 接続部
5606 操作キー
5801 筐体
5802 筐体
5803 表示部
5804 操作キー
5805 レンズ
5806 接続部
5901 筐体
5902 表示部
5903 カメラ
5904 スピーカー
5905 ボタン
5906 外部接続部
5907 マイク
Claims (10)
- 駆動回路と、画素部とを有し、
前記駆動回路は、半導体膜を間に挟んで電気的に接続された第1ゲート及び第2ゲートを有する第1トランジスタと、ソース及びドレインの一方が前記第1トランジスタのソース及びドレインの一方に電気的に接続される第2トランジスタと、を有し、
前記画素部は、第3トランジスタと、液晶素子と、容量素子とを有し、
前記液晶素子は、前記第3トランジスタのソース及びドレインの一方に電気的に接続された透光性を有する第1導電膜と、第2導電膜と、前記第1導電膜及び前記第2導電膜間に生じる電界が与えられる液晶層とを有し、
前記容量素子は、前記第1導電膜と、透光性を有する第3導電膜と、前記第1導電膜と前記第3導電膜の間に位置する窒化物絶縁膜と、を有し、
前記窒化物絶縁膜は、前記第1トランジスタの前記半導体膜と前記第2ゲートの間に位置する半導体装置。 - 駆動回路と、画素部とを有し、
前記駆動回路は、半導体膜を間に挟んで電気的に接続された第1ゲート及び第2ゲートを有し、なおかつ、ソース及びドレインの一方に第1電位が与えられる、或いは前記第1電位と、前記第1電位よりも低い第2電位とが交互に与えられる第1トランジスタと、ソース及びドレインの一方に前記第2電位が与えられ、ソース及びドレインの他方が前記第1トランジスタのソース及びドレインの他方に電気的に接続される第2トランジスタと、を有し、
前記画素部は、第3トランジスタと、液晶素子と、容量素子とを有し、
前記液晶素子は、前記第3トランジスタのソース及びドレインの一方に電気的に接続された透光性を有する第1導電膜と、第2導電膜と、前記第1導電膜及び前記第2導電膜間に生じる電界が与えられる液晶層とを有し、
前記容量素子は、前記第1導電膜と、透光性を有する第3導電膜と、前記第1導電膜と前記第3導電膜の間に位置する窒化物絶縁膜と、を有し、
前記窒化物絶縁膜は、前記第1トランジスタの前記半導体膜と前記第2ゲートの間に位置する半導体装置。 - 駆動回路と、画素部とを有し、
前記駆動回路は、半導体膜を間に挟んで電気的に接続された第1ゲート及び第2ゲートを有し、なおかつ、ソース及びドレインの一方に第1電位が与えられる、或いは前記第1電位と、前記第1電位よりも低い第2電位とが交互に与えられる第1トランジスタと、ソース及びドレインの一方に前記第2電位が与えられ、ソース及びドレインの他方が前記第1トランジスタのソース及びドレインの他方に電気的に接続される第2トランジスタと、を有し、
前記画素部は、第3トランジスタと、液晶素子と、容量素子とを有し、
前記液晶素子は、前記第3トランジスタのソース及びドレインの一方に電気的に接続された透光性を有する第1導電膜と、第2導電膜と、前記第1導電膜及び前記第2導電膜間に生じる電界が与えられる液晶層とを有し、
前記容量素子は、前記第1導電膜と、透光性を有する第3導電膜と、前記第1導電膜と前記第3導電膜の間に位置する窒化物絶縁膜と、を有し、
前記窒化物絶縁膜は、前記第1トランジスタの前記半導体膜と前記第2ゲートの間に位置し、
前記第1トランジスタの前記第2ゲートと、前記第1導電膜とは、一の導電膜をエッチングすることで形成されている半導体装置。 - 請求項1乃至請求項3のいずれか一項において、前記第1トランジスタ乃至前記第3トランジスタは、酸化物半導体膜にチャネル形成領域が形成される半導体装置。
- 請求項4において、前記酸化物半導体膜がIn、Ga、及びZnを含む半導体装置。
- 請求項5において、前記酸化物半導体膜がCAAC−OS膜である半導体装置。
- 請求項1乃至請求項6のいずれか1項において、前記第3導電膜がIn、Ga、及びZnを含む半導体装置。
- 請求項1乃至請求項7のいずれか1項において、前記第1トランジスタは、チャネル幅方向において、前記酸化物半導体膜の端部が前記第1ゲート及び前記第2ゲートと重なるように位置する半導体装置。
- 請求項8において、前記第1トランジスタのチャネル長が0.5μm以上4.5μm以下である半導体装置。
- 請求項8または請求項9において、前記第1トランジスタがノーマリーオフ特性を有する半導体装置。
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Publication number | Publication date |
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JP7076601B2 (ja) | 2022-05-27 |
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US9939692B2 (en) | 2018-04-10 |
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US20140362324A1 (en) | 2014-12-11 |
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US9494830B2 (en) | 2016-11-15 |
JP2024041756A (ja) | 2024-03-27 |
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JP2020113776A (ja) | 2020-07-27 |
US20170052415A1 (en) | 2017-02-23 |
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WO2014196550A1 (en) | 2014-12-11 |
JP6503502B2 (ja) | 2019-04-17 |
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