JP2014129221A - 反応器 - Google Patents
反応器 Download PDFInfo
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- JP2014129221A JP2014129221A JP2013242647A JP2013242647A JP2014129221A JP 2014129221 A JP2014129221 A JP 2014129221A JP 2013242647 A JP2013242647 A JP 2013242647A JP 2013242647 A JP2013242647 A JP 2013242647A JP 2014129221 A JP2014129221 A JP 2014129221A
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- carbon nanotube
- side wall
- reaction chamber
- carbon
- carbon nanotubes
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 232
- 239000002041 carbon nanotube Substances 0.000 claims abstract description 154
- 229910021393 carbon nanotube Inorganic materials 0.000 claims abstract description 154
- 238000006243 chemical reaction Methods 0.000 claims abstract description 71
- 239000000758 substrate Substances 0.000 claims abstract description 56
- 239000003054 catalyst Substances 0.000 claims abstract description 47
- 239000002245 particle Substances 0.000 claims description 44
- 239000002238 carbon nanotube film Substances 0.000 description 41
- 239000007789 gas Substances 0.000 description 29
- 229910052799 carbon Inorganic materials 0.000 description 14
- 239000000463 material Substances 0.000 description 13
- 239000011800 void material Substances 0.000 description 11
- 239000003960 organic solvent Substances 0.000 description 9
- 239000010410 layer Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical group CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 239000000654 additive Substances 0.000 description 4
- 230000000996 additive effect Effects 0.000 description 4
- 239000002131 composite material Chemical group 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 3
- 239000005977 Ethylene Substances 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 238000004220 aggregation Methods 0.000 description 3
- 230000002776 aggregation Effects 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 3
- 238000001878 scanning electron micrograph Methods 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 239000002048 multi walled nanotube Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000002109 single walled nanotube Substances 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- WSLDOOZREJYCGB-UHFFFAOYSA-N 1,2-Dichloroethane Chemical compound ClCCCl WSLDOOZREJYCGB-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002079 double walled nanotube Substances 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 239000002071 nanotube Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
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- B01J15/00—Chemical processes in general for reacting gaseous media with non-particulate solids, e.g. sheet material; Apparatus specially adapted therefor
- B01J15/005—Chemical processes in general for reacting gaseous media with non-particulate solids, e.g. sheet material; Apparatus specially adapted therefor in the presence of catalytically active bodies, e.g. porous plates
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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Abstract
【解決手段】本発明の反応器は、反応室と、成長基板と、を含む反応器であって、反応室は入口及び出口を含み、成長基板は、支持体によって反応室の内に設置され、且つ入口及び出口の間に設置され、且つ入口及び前記出口と間隔をあけて設置され、成長基板は、側壁と、底面と、底面と相対する開口を含み、側壁は相対する両端を有し、一端は底面と接合し、他端には開口が形成され、側壁はカーボンナノチューブ構造体及び触媒粒を含み、且つ複数の空隙を有し、開口は入口と面して設置され、入口から導入される混合気体は、開口を通じって、成長基板に流れ、側壁の空隙を貫通して、出口から流出する。
【選択図】図1
Description
図1を参照すると、本実施例の反応器10は、反応室13と、成長基板14と、支持体16と、を含む。支持体16によって、成長基板14は反応室13の内に固定される。
図12を参照すると、本実施例の反応器20は、反応室13と、成長基板14と、支持体16と、を含む。支持体16によって、成長基板14は反応室13の内に固定される。反応室13は、入口11及び出口12を有する。入口11及び出口12は反応室13の長手方向の相対する両端に設置される。成長基板14はバケツ状構造体であり、間隔をあける多層の側壁140と、底面144と、底面144と相対する開口146と、を含む。開口146は入口11と面して設置される。間隔をあける多層の側壁140と底面144とは、半閉鎖構造体を形成する。
11 入口
12 出口
13 反応室
14 成長基板
15 触媒粒
16 支持体
17 電源
140 側壁
142 空隙
143 カーボンナノチューブセグメント
144 底面
145 カーボンナノチューブ
146 開口
172 第一電極
174 第二電極
Claims (1)
- カーボンナノチューブを成長させる反応器であって、
反応室と、成長基板と、を含み、
前記反応室は入口及び出口を含み、
前記成長基板は、前記反応室の内に設置され、且つ前記入口及び前記出口の間に設置され、且つ前記入口及び前記出口と間隔をあけて設置され、
前記成長基板は、側壁と、底面と、前記底面に相対する開口と、を含み、
前記側壁は相対する両端を有し、一端は前記底面と接合し、他端には前記開口が形成され、
前記側壁は、カーボンナノチューブ構造体及び触媒粒を含み、且つ複数の空隙を有し、
前記開口は、前記入口と面して設置され、
前記入口から導入される混合気体は、前記開口を通じて、前記成長基板に流れ、前記側壁の空隙を貫通して、出口から流出することを特徴とする反応器。
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