JP5302279B2 - ダイヤモンド薄膜の成長装置 - Google Patents
ダイヤモンド薄膜の成長装置 Download PDFInfo
- Publication number
- JP5302279B2 JP5302279B2 JP2010198908A JP2010198908A JP5302279B2 JP 5302279 B2 JP5302279 B2 JP 5302279B2 JP 2010198908 A JP2010198908 A JP 2010198908A JP 2010198908 A JP2010198908 A JP 2010198908A JP 5302279 B2 JP5302279 B2 JP 5302279B2
- Authority
- JP
- Japan
- Prior art keywords
- carbon nanotube
- thin film
- diamond thin
- hot filament
- carbon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229910003460 diamond Inorganic materials 0.000 title claims description 65
- 239000010432 diamond Substances 0.000 title claims description 65
- 239000010409 thin film Substances 0.000 title claims description 56
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 150
- 239000002041 carbon nanotube Substances 0.000 claims description 129
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 129
- 238000006243 chemical reaction Methods 0.000 claims description 38
- 239000000758 substrate Substances 0.000 description 26
- 239000000463 material Substances 0.000 description 25
- 239000002238 carbon nanotube film Substances 0.000 description 22
- 239000007789 gas Substances 0.000 description 21
- 229910052799 carbon Inorganic materials 0.000 description 17
- 238000000034 method Methods 0.000 description 17
- 238000004050 hot filament vapor deposition Methods 0.000 description 9
- 239000003960 organic solvent Substances 0.000 description 9
- 239000007769 metal material Substances 0.000 description 8
- 239000012495 reaction gas Substances 0.000 description 8
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 5
- 238000001816 cooling Methods 0.000 description 5
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 4
- 239000005977 Ethylene Substances 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 239000003054 catalyst Substances 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229930195733 hydrocarbon Natural products 0.000 description 3
- 150000002430 hydrocarbons Chemical class 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000006911 nucleation Effects 0.000 description 3
- 238000010899 nucleation Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 239000002079 double walled nanotube Substances 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 239000002048 multi walled nanotube Substances 0.000 description 2
- 229910052755 nonmetal Inorganic materials 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000002109 single walled nanotube Substances 0.000 description 2
- 230000002194 synthesizing effect Effects 0.000 description 2
- SCYULBFZEHDVBN-UHFFFAOYSA-N 1,1-Dichloroethane Chemical compound CC(Cl)Cl SCYULBFZEHDVBN-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 238000001241 arc-discharge method Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/271—Diamond only using hot filaments
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Carbon And Carbon Compounds (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
19 反応室
199 支持体
18 真空装置
195 ホットフィラメント
192 第一電極
194 第二電極
191 入気口
193 排気口
197 基材
1950 カーボンナノチューブワイヤの表面
145、1953 カーボンナノチューブ
143a カーボンナノチューブフィルム
143b カーボンナノチューブセグメント
Claims (2)
- 入気口及び排気口を有する反応室と、
前記排気口によって前記反応室に連接された真空装置と、
前記入気口と対向して間隔を置いて前記反応室の中に設置された支持体と、
前記入気口と前記支持体との間に設置されたホットフィラメントと、
を含むダイヤモンド薄膜の成長装置において、
前記ホットフィラメントが少なくとも一本のカーボンナノチューブワイヤからなり、該カーボンナノチューブワイヤが複数のカーボンナノチューブからなることを特徴とするダイヤモンド薄膜の成長装置。 - 前記複数のカーボンナノチューブにおいて、隣接するカーボンナノチューブが、端と端で接続されていることを特徴とする、請求項1に記載のダイヤモンド薄膜の成長装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200910190151.7A CN102011101B (zh) | 2009-09-04 | 2009-09-04 | 金刚石薄膜的生长装置 |
CN200910190151.7 | 2009-09-04 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011057544A JP2011057544A (ja) | 2011-03-24 |
JP5302279B2 true JP5302279B2 (ja) | 2013-10-02 |
Family
ID=43646682
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010198908A Active JP5302279B2 (ja) | 2009-09-04 | 2010-09-06 | ダイヤモンド薄膜の成長装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20110056433A1 (ja) |
JP (1) | JP5302279B2 (ja) |
CN (1) | CN102011101B (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101880035A (zh) | 2010-06-29 | 2010-11-10 | 清华大学 | 碳纳米管结构 |
JP7061049B2 (ja) * | 2018-09-10 | 2022-04-27 | 株式会社神戸製鋼所 | 熱フィラメントcvd装置 |
CN110079786A (zh) * | 2019-06-03 | 2019-08-02 | 杭州睿清环保科技有限公司 | 用于制备大面积金刚石薄膜的热壁热丝cvd的装置 |
CN112323046B (zh) * | 2020-08-31 | 2023-02-21 | 广东鼎泰机器人科技有限公司 | 一种涂层机的真空加热装置 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60221395A (ja) * | 1984-04-19 | 1985-11-06 | Yoshio Imai | ダイヤモンド薄膜の製造方法 |
JP2834797B2 (ja) * | 1989-10-25 | 1998-12-14 | 株式会社リコー | 薄膜形成装置 |
CN1123847A (zh) * | 1994-11-29 | 1996-06-05 | 中国科学院物理研究所 | 一种热丝法生长金刚石的方法 |
KR100334993B1 (ko) * | 1998-12-01 | 2002-05-02 | 추후제출 | 히터 |
WO2000047795A1 (en) * | 1999-02-10 | 2000-08-17 | Auburn University Industrial Programs & Tech Transfer | Method of hot-filament chemical vapor deposition of diamond |
KR100379475B1 (ko) * | 2000-08-18 | 2003-04-10 | 엘지전자 주식회사 | 탄소나노튜브의 무촉매 성장방법 |
KR100382943B1 (ko) * | 2001-02-26 | 2003-05-09 | 프리시젼다이아몬드 주식회사 | 고온 열 필라멘트를 이용한 기상화학다이아몬드증착장치 |
US6949877B2 (en) * | 2001-03-27 | 2005-09-27 | General Electric Company | Electron emitter including carbon nanotubes and its application in gas discharge devices |
JP3840147B2 (ja) * | 2002-06-21 | 2006-11-01 | キヤノン株式会社 | 成膜装置、成膜方法およびそれを用いた電子放出素子、電子源、画像形成装置の製造方法 |
CN1282216C (zh) * | 2002-09-16 | 2006-10-25 | 清华大学 | 一种灯丝及其制备方法 |
CN1415781A (zh) * | 2002-10-10 | 2003-05-07 | 上海大学 | 一种用作集成电路封装基板材料的制造方法 |
KR20060032402A (ko) * | 2004-10-12 | 2006-04-17 | 삼성에스디아이 주식회사 | 카본나노튜브 에미터 및 그 제조방법과 이를 응용한전계방출소자 및 그 제조방법 |
US20060185595A1 (en) * | 2005-02-23 | 2006-08-24 | Coll Bernard F | Apparatus and process for carbon nanotube growth |
SE529375C2 (sv) * | 2005-07-22 | 2007-07-24 | Sandvik Intellectual Property | Anordning för förbättrad plasmaaktivitet i PVD-reaktorer |
CN100418876C (zh) * | 2005-08-19 | 2008-09-17 | 清华大学 | 碳纳米管阵列制备装置及方法 |
CN101090586B (zh) * | 2006-06-16 | 2010-05-12 | 清华大学 | 纳米柔性电热材料及包括该纳米柔性电热材料的加热装置 |
JP4613327B2 (ja) * | 2006-11-06 | 2011-01-19 | 学校法人 名城大学 | カーボンナノチューブ製フィラメントおよびその利用 |
CN101499328B (zh) * | 2008-02-01 | 2013-06-05 | 清华大学 | 绞线 |
JP2010027175A (ja) * | 2008-07-23 | 2010-02-04 | Showa Denko HD Singapore Pte Ltd | 炭素膜の形成方法、磁気記録媒体の製造方法、及び炭素膜の形成装置 |
-
2009
- 2009-09-04 CN CN200910190151.7A patent/CN102011101B/zh active Active
- 2009-12-03 US US12/592,906 patent/US20110056433A1/en not_active Abandoned
-
2010
- 2010-09-06 JP JP2010198908A patent/JP5302279B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
JP2011057544A (ja) | 2011-03-24 |
US20110056433A1 (en) | 2011-03-10 |
CN102011101A (zh) | 2011-04-13 |
CN102011101B (zh) | 2013-06-05 |
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