JP5663648B2 - 反応器 - Google Patents
反応器 Download PDFInfo
- Publication number
- JP5663648B2 JP5663648B2 JP2013242648A JP2013242648A JP5663648B2 JP 5663648 B2 JP5663648 B2 JP 5663648B2 JP 2013242648 A JP2013242648 A JP 2013242648A JP 2013242648 A JP2013242648 A JP 2013242648A JP 5663648 B2 JP5663648 B2 JP 5663648B2
- Authority
- JP
- Japan
- Prior art keywords
- carbon nanotube
- growth substrate
- reaction chamber
- carbon
- carbon nanotubes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 267
- 239000002041 carbon nanotube Substances 0.000 claims description 162
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 162
- 239000000758 substrate Substances 0.000 claims description 113
- 238000006243 chemical reaction Methods 0.000 claims description 83
- 239000003054 catalyst Substances 0.000 claims description 48
- 239000002245 particle Substances 0.000 claims description 42
- 239000012495 reaction gas Substances 0.000 claims description 7
- 239000002238 carbon nanotube film Substances 0.000 description 41
- 239000007789 gas Substances 0.000 description 34
- 229910052799 carbon Inorganic materials 0.000 description 20
- 239000000463 material Substances 0.000 description 11
- 239000011800 void material Substances 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 9
- 239000003960 organic solvent Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 6
- 239000010410 layer Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical group CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 239000000654 additive Substances 0.000 description 4
- 230000000996 additive effect Effects 0.000 description 4
- 239000012159 carrier gas Substances 0.000 description 4
- 239000002131 composite material Chemical group 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 3
- 239000005977 Ethylene Substances 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000001878 scanning electron micrograph Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 238000004220 aggregation Methods 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000002048 multi walled nanotube Substances 0.000 description 2
- 239000002071 nanotube Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000002109 single walled nanotube Substances 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- WSLDOOZREJYCGB-UHFFFAOYSA-N 1,2-Dichloroethane Chemical compound ClCCCl WSLDOOZREJYCGB-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002079 double walled nanotube Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/158—Carbon nanotubes
- C01B32/16—Preparation
- C01B32/162—Preparation characterised by catalysts
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0605—Carbon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
- C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
Description
図1を参照すると、本実施例の反応器10は、反応室13と、成長基板14と、支持体16と、を含む。支持体16によって、成長基板14は反応室13の内に固定される。
図10を参照すると、本実施例の反応器20は、反応室13と、複数の成長基板14と、複数の支持体16と、を含む。支持体16によって、成長基板14は反応室13の内に固定される。複数の成長基板14は複数の支持体16と一対一に対応する。反応室13は、入口11及び出口12を有する。入口11及び出口12は反応室13の長手方向の相対する両端に設置される。反応室13において、反応室13の長手方向に沿って、複数の成長基板14は間隔をあけて設置される。
図12を参照すると、本実施例の反応器30は、反応室13と、複数の成長基板14と、支持体16と、を含む。支持体16によって、成長基板14は反応室13の内に固定される。反応室13は、入口11及び出口12を有する。入口11及び出口12は反応室13の相対する両端に設置される。反応室13において、複数の成長基板14は間隔をあけて設置される。
11 入口
12 出口
13 反応室
14 成長基板
15 触媒粒
16 支持体
140 電源
142 空隙
143 カーボンナノチューブセグメント
144 第一電極
145 カーボンナノチューブ
146 第二電極
Claims (2)
- カーボンナノチューブを成長させる反応器であって、
反応室と、少なくとも一つの成長基板と、を含み、
前記反応室は入口及び出口を含み、
前記少なくとも一つの成長基板は反応室の内に設置され、
前記少なくとも一つの成長基板はカーボンナノチューブ構造体及び触媒粒を含み、
各成長基板は複数の空隙を有し、
前記入口から導入される反応気体は、前記成長基板に流れ、前記少なくとも一つの成長基板の空隙を通じて抜けて、出口から流出し、
前記反応気体の流れる方向は、前記少なくとも一つの成長基板の表面と、角度αを成し、前記角度αは、0°〜90°(0°を含まず)であることを特徴とする反応器。 - 前記反応気体の流れる方向は、前記少なくとも一つの成長基板の表面と垂直であることを特徴とする請求項1に記載の反応器。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210587878.0A CN103896245B (zh) | 2012-12-29 | 2012-12-29 | 反应器及生长碳纳米管的方法 |
CN201210587878.0 | 2012-12-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014129222A JP2014129222A (ja) | 2014-07-10 |
JP5663648B2 true JP5663648B2 (ja) | 2015-02-04 |
Family
ID=50987879
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013242648A Active JP5663648B2 (ja) | 2012-12-29 | 2013-11-25 | 反応器 |
Country Status (4)
Country | Link |
---|---|
US (2) | US9561962B2 (ja) |
JP (1) | JP5663648B2 (ja) |
CN (1) | CN103896245B (ja) |
TW (1) | TWI545079B (ja) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103896244B (zh) * | 2012-12-29 | 2016-08-10 | 清华大学 | 反应器及生长碳纳米管的方法 |
CN103896245B (zh) * | 2012-12-29 | 2016-01-20 | 清华大学 | 反应器及生长碳纳米管的方法 |
CN103896243B (zh) * | 2012-12-29 | 2016-03-09 | 清华大学 | 反应器及生长碳纳米管的方法 |
PL3194067T3 (pl) * | 2014-08-20 | 2018-11-30 | Bayer Aktiengesellschaft | Sposób fosgenowania związków zawierających grupy hydroksylowe, tiolowe, aminowe i/lub formamidowe |
TWI633052B (zh) * | 2016-05-20 | 2018-08-21 | 鴻海精密工業股份有限公司 | 奈米碳管陣列電學特性的原位測量裝置 |
CN107400924B (zh) * | 2016-05-20 | 2021-04-02 | 清华大学 | 碳纤维膜及其制备方法 |
CN106185872A (zh) * | 2016-08-31 | 2016-12-07 | 无锡东恒新能源科技有限公司 | 一种带升降基底的反应装置及碳纳米管制备的方法 |
CN106185875A (zh) * | 2016-08-31 | 2016-12-07 | 无锡东恒新能源科技有限公司 | 一种碳纳米管的制备装置和制备方法 |
CN106185871A (zh) * | 2016-08-31 | 2016-12-07 | 无锡东恒新能源科技有限公司 | 一种带有网格电极的反应装置和碳纳米管的制备方法 |
CN106185876A (zh) * | 2016-08-31 | 2016-12-07 | 无锡东恒新能源科技有限公司 | 一种带热处理的反应装置和制备碳纳米管的方法 |
CN108872338B (zh) * | 2017-05-08 | 2021-08-03 | 清华大学 | 生物传感器微电极及生物传感器 |
CN108930061B (zh) * | 2017-05-22 | 2021-04-02 | 清华大学 | 外延生长装置及其生长外延层的方法 |
CN109030595B (zh) * | 2017-06-09 | 2023-09-26 | 清华大学 | 生物传感器电极及生物传感器 |
KR102440177B1 (ko) * | 2020-09-25 | 2022-09-05 | 비나텍주식회사 | 탄소나노섬유 제조방법 및 탄소나노섬유 제조장치 |
CN115247301B (zh) * | 2021-04-02 | 2024-03-12 | 丰田自动车株式会社 | 由碳纳米管构成的纺织线及其制造方法 |
Family Cites Families (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8024A (en) * | 1851-04-08 | Bbick-pbess | ||
JP3595233B2 (ja) * | 2000-02-16 | 2004-12-02 | 株式会社ノリタケカンパニーリミテド | 電子放出源及びその製造方法 |
KR100360470B1 (ko) * | 2000-03-15 | 2002-11-09 | 삼성에스디아이 주식회사 | 저압-dc-열화학증착법을 이용한 탄소나노튜브 수직배향증착 방법 |
US6699525B2 (en) * | 2001-04-16 | 2004-03-02 | The Board Of Trustees Of Western Michigan University | Method of forming carbon nanotubes and apparatus therefor |
CN100411979C (zh) * | 2002-09-16 | 2008-08-20 | 清华大学 | 一种碳纳米管绳及其制造方法 |
CN1239387C (zh) * | 2002-11-21 | 2006-02-01 | 清华大学 | 碳纳米管阵列及其生长方法 |
US20040224217A1 (en) * | 2003-05-08 | 2004-11-11 | Toops Todd Jefferson | Integrated membrane electrode assembly using aligned carbon nanotubules |
JP2005213700A (ja) * | 2004-01-30 | 2005-08-11 | National Institute For Materials Science | 繊維径の異なる複合型繊維状炭素およびその製造方法 |
KR100708540B1 (ko) | 2004-02-09 | 2007-04-18 | (주)케이에이치 케미컬 | Y-분지형 탄소나노튜브의 제조 |
US7744793B2 (en) | 2005-09-06 | 2010-06-29 | Lemaire Alexander B | Apparatus and method for growing fullerene nanotube forests, and forming nanotube films, threads and composite structures therefrom |
CN100467370C (zh) | 2005-09-12 | 2009-03-11 | 鸿富锦精密工业(深圳)有限公司 | 一种碳纳米管制备装置及方法 |
US20070084407A1 (en) * | 2005-10-14 | 2007-04-19 | Hon Hai Precision Industry Co., Ltd. | Apparatus and method for manufacturing carbon nanotubes |
US8372470B2 (en) * | 2005-10-25 | 2013-02-12 | Massachusetts Institute Of Technology | Apparatus and methods for controlled growth and assembly of nanostructures |
JP4779621B2 (ja) * | 2005-12-12 | 2011-09-28 | 株式会社デンソー | カーボンナノチューブの製造方法 |
CN100500556C (zh) * | 2005-12-16 | 2009-06-17 | 清华大学 | 碳纳米管丝及其制作方法 |
JP4983042B2 (ja) * | 2006-02-21 | 2012-07-25 | 住友電気工業株式会社 | カーボンナノ構造体の製造方法、および触媒反応容器 |
EP2385016B1 (en) * | 2006-05-19 | 2018-08-08 | Massachusetts Institute of Technology | Continuous process for the production of nanostructures |
US9487877B2 (en) * | 2007-02-01 | 2016-11-08 | Purdue Research Foundation | Contact metallization of carbon nanotubes |
JP5213099B2 (ja) * | 2007-09-18 | 2013-06-19 | 国立大学法人東京工業大学 | カーボンファイバーシート上のカーボンナノチューブの成長方法およびカーボンナノチューブエミッター |
CN101465434B (zh) * | 2007-12-19 | 2010-09-29 | 清华大学 | 燃料电池膜电极及其制备方法 |
CN101497436B (zh) * | 2008-02-01 | 2015-06-03 | 清华大学 | 碳纳米管薄膜结构及其制备方法 |
US9077042B2 (en) * | 2008-07-25 | 2015-07-07 | Tsinghua University | Membrane electrode assembly and biofuel cell using the same |
CN101372327B (zh) * | 2008-09-26 | 2011-03-23 | 厦门大学 | 一种碳纳米管阵列的生长方法 |
KR101082831B1 (ko) * | 2008-11-25 | 2011-11-11 | 금호석유화학 주식회사 | 탄소나노튜브 합성장치 |
JP5375293B2 (ja) * | 2009-04-09 | 2013-12-25 | トヨタ自動車株式会社 | カーボンナノチューブの製造方法およびカーボンナノチューブ製造装置 |
CN102086035B (zh) * | 2009-12-03 | 2013-06-19 | 北京富纳特创新科技有限公司 | 碳纳米管膜及其制备方法 |
CN102092702B (zh) * | 2009-12-11 | 2012-12-19 | 北京富纳特创新科技有限公司 | 碳纳米管结构的制备方法 |
CN102092704B (zh) | 2009-12-11 | 2013-11-06 | 北京富纳特创新科技有限公司 | 碳纳米管阵列的制备装置及制备方法 |
CN103373719B (zh) * | 2012-04-25 | 2015-11-25 | 北京富纳特创新科技有限公司 | 碳纳米管膜的制备方法 |
CN103383909B (zh) * | 2012-05-04 | 2015-11-25 | 清华大学 | 场发射装置 |
CN103382037B (zh) * | 2012-05-04 | 2015-05-20 | 清华大学 | 碳纳米管结构的制备方法 |
CN103382023B (zh) * | 2012-05-04 | 2015-07-01 | 清华大学 | 碳纳米管结构及其制备方法 |
CN103896244B (zh) * | 2012-12-29 | 2016-08-10 | 清华大学 | 反应器及生长碳纳米管的方法 |
CN103896243B (zh) * | 2012-12-29 | 2016-03-09 | 清华大学 | 反应器及生长碳纳米管的方法 |
CN103896245B (zh) * | 2012-12-29 | 2016-01-20 | 清华大学 | 反应器及生长碳纳米管的方法 |
-
2012
- 2012-12-29 CN CN201210587878.0A patent/CN103896245B/zh active Active
-
2013
- 2013-01-11 TW TW102100998A patent/TWI545079B/zh active
- 2013-04-25 US US13/870,126 patent/US9561962B2/en active Active
- 2013-11-25 JP JP2013242648A patent/JP5663648B2/ja active Active
-
2016
- 2016-10-13 US US15/293,227 patent/US10337098B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US9561962B2 (en) | 2017-02-07 |
CN103896245A (zh) | 2014-07-02 |
JP2014129222A (ja) | 2014-07-10 |
TW201425210A (zh) | 2014-07-01 |
US10337098B2 (en) | 2019-07-02 |
US20170029277A1 (en) | 2017-02-02 |
CN103896245B (zh) | 2016-01-20 |
TWI545079B (zh) | 2016-08-11 |
US20140186256A1 (en) | 2014-07-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5663648B2 (ja) | 反応器 | |
JP5663646B2 (ja) | 反応器 | |
JP5663647B2 (ja) | 反応器 | |
JP5465217B2 (ja) | グラフェン−カーボンナノチューブ複合構造体 | |
JP4436821B2 (ja) | 単層カーボンナノチューブ配列の成長装置及び単層カーボンナノチューブ配列の成長方法 | |
TWI485099B (zh) | 奈米碳管結構及其製備方法 | |
JP5175313B2 (ja) | カーボンナノチューブ―ナノ粒子複合材料体及びその製造方法 | |
JP5336419B2 (ja) | カーボンナノチューブフィルム及びその製造方法、発光装置 | |
KR20090033138A (ko) | 면가열원 | |
JP2008296338A (ja) | 被覆構造体 | |
JP2013234115A (ja) | カーボンナノチューブ構造体の製造方法 | |
TWI406808B (zh) | 奈米碳管結構之製備方法 | |
JP5504238B2 (ja) | 電界放出陰極素子及びその製造方法 | |
JP5302279B2 (ja) | ダイヤモンド薄膜の成長装置 | |
JP2004083293A (ja) | フラーレンを用いたカーボンナノチューブの製造方法 | |
TWI581664B (zh) | 場發射裝置 | |
TW201226312A (en) | Carbon nanotube composite structure and method for making same | |
TWI417923B (zh) | 場發射陰極結構及其製備方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20141008 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20141014 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20141029 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20141110 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20141208 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5663648 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |