JP2012533182A - 発光ダイオードおよび発光ダイオードの製造方法 - Google Patents
発光ダイオードおよび発光ダイオードの製造方法 Download PDFInfo
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- H—ELECTRICITY
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45139—Silver (Ag) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- Engineering & Computer Science (AREA)
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
Description
Claims (14)
- − 実装面(1a)を有するキャリア(1)と、
− 前記実装面(1a)に固定されている少なくとも1個の発光ダイオードチップ(2,2a,2b,2c)と、
− 電磁放射(4)を反射するように設けられている反射要素(3)と、
を備えており、
− 前記反射要素(3)が前記キャリア(1)に固定されており、
− 前記反射要素(3)が多孔質ポリテトラフルオロエチレンを備えている、
発光ダイオード。 - 前記反射要素(3)が、多孔質ポリテトラフルオロエチレンからなる箔から構成されている、
請求項1に記載の発光ダイオード。 - − 前記反射要素(3)が、多孔質ポリテトラフルオロエチレンからなる堅いインサート部として具体化されており、かつ、前記キャリア(1)の反射壁(11)に固定されており、前記反射壁(11)が前記少なくとも1個の発光ダイオードチップ(2,2a,2b,2c)の側方を囲んでおり、
− 前記キャリア(1)の外面の領域(13)であって、プラスチックによって形成されており、かつ、前記少なくとも1個の発光ダイオードチップ(2,2a,2b,2c)の動作時に前記少なくとも1個の発光ダイオードチップ(2,2a,2b,2c)によって生成される電磁放射(4)が入射し得る、領域(13)、のすべてが、前記反射要素(3)によって覆われている、
請求項1に記載の発光ダイオード。 - − 前記反射要素(3)が、前記キャリア(1)のベースプレート(10)に固定されている、多孔質ポリテトラフルオロエチレンからなる反射壁(11)、として具体化されており、
− 前記キャリア(1)の外面の領域(13)であって、プラスチックによって形成されており、かつ、前記少なくとも1個の発光ダイオードチップ(2,2a,2b,2c)の動作時に前記少なくとも1個の発光ダイオードチップ(2,2a,2b,2c)によって生成される電磁放射(4)が入射し得る、領域(13)、のすべてが、前記反射要素(3)によって覆われている、
請求項1に記載の発光ダイオード。 - 前記反射要素(3)が、多孔質ポリテトラフルオロエチレンからなる堅いインサート部として具体化されており、かつ、前記キャリア(1)の反射壁(11)に固定されており、前記反射壁(11)が前記少なくとも1個の発光ダイオードチップ(2,2a,2b,2c)の側方を囲んでいる、
請求項1に記載の発光ダイオード。 - 前記反射要素(3)が、前記キャリア(1)のベースプレート(10)に固定されている、多孔質ポリテトラフルオロエチレンからなる反射壁(11)、として具体化されている、
請求項1に記載の発光ダイオード。 - 前記反射要素(3)が、少なくとも部分的に、接着剤(31)によって前記キャリア(1)に固定されている、
請求項1から請求項6のいずれかに記載の発光ダイオード。 - 前記反射要素(3)が、少なくとも部分的に、接着剤を使用しない方法で前記キャリア(1)に固定されている、
請求項1から請求項7のいずれかに記載の発光ダイオード。 - 前記反射要素(3)が、前記キャリア(1)の外面の領域(13)であって、前記少なくとも1個の発光ダイオードチップ(2,2a,2b,2c)の動作時に前記少なくとも1個の発光ダイオードチップ(2,2a,2b,2c)によって生成される電磁放射(4)が入射し得る、領域(13)、のすべてを覆っている、
請求項1から請求項8のいずれかに記載の発光ダイオード。 - 前記少なくとも1個の発光ダイオードチップ(2,2a,2b,2c)の動作時に、前記少なくとも1個の発光ダイオードチップ(2,2a,2b,2c)によって生成される電磁放射(4)が前記キャリアの前記外面に入射しない、
請求項1から請求項9のいずれかに記載の発光ダイオード。 - 前記キャリア(1)の外面の領域(13)であって、プラスチックによって形成されており、かつ、前記少なくとも1個の発光ダイオードチップ(2,2a,2b,2c)の動作時に前記少なくとも1個の発光ダイオードチップ(2,2a,2b,2c)によって生成される電磁放射(4)が入射し得る、領域(13)、のすべてが、前記反射要素(3)によって覆われている、
請求項1から請求項10のいずれかに記載の発光ダイオード。 - プラスチックが存在していない、前記キャリア(1)の外面の前記領域(14)すべてに、前記反射要素(3)が存在していない、
請求項1から請求項11のいずれかに記載の発光ダイオード。 - 請求項1から請求項12のいずれかに記載の発光ダイオードを製造する方法であって、
前記キャリア(1)が、少なくとも部分的に熱可塑性材料を備えており、前記反射要素(3)を接着剤を使用しない方法で前記キャリア(1)に固定する目的で、前記反射要素(3)を前記プラスチックの上に前記プラスチックの溶融によって押し付ける、
方法。 - 請求項1から請求項12のいずれかに記載の発光ダイオードを製造する方法であって、
前記キャリア(1)が少なくとも部分的に熱可塑性材料を備えており、前記反射要素(3)を接着剤を使用しない方法で前記キャリア(1)に固定する目的で、前記反射要素(3)を前記プラスチックによってインサート成形する、
方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102009033287A DE102009033287A1 (de) | 2009-07-15 | 2009-07-15 | Leuchtdiode und Verfahren zur Herstellung einer Leuchtdiode |
DE102009033287.1 | 2009-07-15 | ||
PCT/EP2010/059217 WO2011006754A1 (de) | 2009-07-15 | 2010-06-29 | Leuchtdiode und verfahren zur herstellung einer leuchtdiode |
Publications (3)
Publication Number | Publication Date |
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JP2012533182A true JP2012533182A (ja) | 2012-12-20 |
JP2012533182A5 JP2012533182A5 (ja) | 2014-09-11 |
JP5685249B2 JP5685249B2 (ja) | 2015-03-18 |
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Application Number | Title | Priority Date | Filing Date |
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JP2012519958A Expired - Fee Related JP5685249B2 (ja) | 2009-07-15 | 2010-06-29 | 発光ダイオードおよび発光ダイオードの製造方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8581288B2 (ja) |
EP (1) | EP2454765A1 (ja) |
JP (1) | JP5685249B2 (ja) |
KR (1) | KR101649287B1 (ja) |
CN (1) | CN102473825B (ja) |
DE (1) | DE102009033287A1 (ja) |
WO (1) | WO2011006754A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2016535937A (ja) * | 2013-11-07 | 2016-11-17 | コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. | Ledを取り囲む全内部反射レイヤを伴うledのためのサブストレート |
Families Citing this family (9)
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DE102009058421A1 (de) * | 2009-12-16 | 2011-06-22 | OSRAM Opto Semiconductors GmbH, 93055 | Verfahren zur Herstellung eines Gehäuses für ein optoelektronisches Halbleiterbauteil, Gehäuse und optoelektronisches Halbleiterbauteil |
DE102010026344A1 (de) * | 2010-07-07 | 2012-01-12 | Osram Opto Semiconductors Gmbh | Leuchtdiode |
JP5902823B2 (ja) | 2011-11-17 | 2016-04-13 | ルーメンス カンパニー リミテッド | 発光素子パッケージ及びそれを備えるバックライトユニット |
US9834456B2 (en) | 2015-06-08 | 2017-12-05 | Rayvio Corporation | Ultraviolet disinfection system |
US10246348B2 (en) | 2015-06-08 | 2019-04-02 | Rayvio Corporation | Ultraviolet disinfection system |
US9540252B1 (en) | 2015-06-08 | 2017-01-10 | Rayvio Corporation | Ultraviolet disinfection system |
DE102017110850A1 (de) | 2017-05-18 | 2018-11-22 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zum Herstellen eines optoelektronischen Bauelements |
TWI648878B (zh) * | 2018-05-15 | 2019-01-21 | 東貝光電科技股份有限公司 | Led發光源、led發光源之製造方法及其直下式顯示器 |
DE102018132542A1 (de) | 2018-12-17 | 2020-06-18 | Osram Opto Semiconductors Gmbh | Optoelektronische leuchtvorrichtung und herstellungsverfahren |
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DE10153259A1 (de) | 2001-10-31 | 2003-05-22 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement |
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JP4183175B2 (ja) | 2003-04-21 | 2008-11-19 | 京セラ株式会社 | 発光素子収納用パッケージおよび発光装置 |
DE102004014207A1 (de) * | 2004-03-23 | 2005-10-13 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauteil mit mehrteiligem Gehäusekörper |
DE102004053116A1 (de) | 2004-11-03 | 2006-05-04 | Tridonic Optoelectronics Gmbh | Leuchtdioden-Anordnung mit Farbkonversions-Material |
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WO2008144656A2 (en) * | 2007-05-20 | 2008-11-27 | 3M Innovative Properties Company | Light recycling hollow cavity type display backlight |
JP2009032943A (ja) | 2007-07-27 | 2009-02-12 | Japan Gore Tex Inc | 発光素子用プリント配線基板 |
WO2009075530A2 (en) * | 2007-12-13 | 2009-06-18 | Amoleds Co., Ltd. | Semiconductor and manufacturing method thereof |
EP2255231A1 (en) * | 2008-02-07 | 2010-12-01 | 3M Innovative Properties Company | Hollow backlight with structured films |
CN101952646B (zh) * | 2008-02-22 | 2014-01-29 | 3M创新有限公司 | 具有选定的输出光通量分布的背光源及使用该背光源的显示*** |
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- 2009-07-15 DE DE102009033287A patent/DE102009033287A1/de not_active Withdrawn
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2010
- 2010-06-29 CN CN201080031876.2A patent/CN102473825B/zh not_active Expired - Fee Related
- 2010-06-29 WO PCT/EP2010/059217 patent/WO2011006754A1/de active Application Filing
- 2010-06-29 JP JP2012519958A patent/JP5685249B2/ja not_active Expired - Fee Related
- 2010-06-29 US US13/382,313 patent/US8581288B2/en not_active Expired - Fee Related
- 2010-06-29 KR KR1020127004034A patent/KR101649287B1/ko active IP Right Grant
- 2010-06-29 EP EP10725804A patent/EP2454765A1/de not_active Withdrawn
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2016535937A (ja) * | 2013-11-07 | 2016-11-17 | コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. | Ledを取り囲む全内部反射レイヤを伴うledのためのサブストレート |
JP2020061574A (ja) * | 2013-11-07 | 2020-04-16 | ルミレッズ ホールディング ベーフェー | Ledを取り囲む全内部反射レイヤを伴うledのためのサブストレート |
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JP5685249B2 (ja) | 2015-03-18 |
CN102473825A (zh) | 2012-05-23 |
US8581288B2 (en) | 2013-11-12 |
KR101649287B1 (ko) | 2016-08-18 |
KR20120039023A (ko) | 2012-04-24 |
EP2454765A1 (de) | 2012-05-23 |
US20120132947A1 (en) | 2012-05-31 |
WO2011006754A1 (de) | 2011-01-20 |
DE102009033287A1 (de) | 2011-01-20 |
CN102473825B (zh) | 2015-02-25 |
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