EP2454765A1 - Leuchtdiode und verfahren zur herstellung einer leuchtdiode - Google Patents
Leuchtdiode und verfahren zur herstellung einer leuchtdiodeInfo
- Publication number
- EP2454765A1 EP2454765A1 EP10725804A EP10725804A EP2454765A1 EP 2454765 A1 EP2454765 A1 EP 2454765A1 EP 10725804 A EP10725804 A EP 10725804A EP 10725804 A EP10725804 A EP 10725804A EP 2454765 A1 EP2454765 A1 EP 2454765A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- light
- emitting diode
- carrier
- reflective element
- diode according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- -1 polytetrafluoroethylene Polymers 0.000 claims abstract description 31
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims abstract description 31
- 239000004810 polytetrafluoroethylene Substances 0.000 claims abstract description 31
- 230000005670 electromagnetic radiation Effects 0.000 claims abstract description 29
- 239000004033 plastic Substances 0.000 claims description 26
- 239000000853 adhesive Substances 0.000 claims description 10
- 230000001070 adhesive effect Effects 0.000 claims description 10
- 239000012815 thermoplastic material Substances 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 2
- 230000008018 melting Effects 0.000 claims description 2
- 230000005855 radiation Effects 0.000 description 12
- 239000000463 material Substances 0.000 description 9
- 229920001169 thermoplastic Polymers 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 239000004416 thermosoftening plastic Substances 0.000 description 6
- 239000002184 metal Substances 0.000 description 4
- 238000007731 hot pressing Methods 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- 230000032683 aging Effects 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000012777 electrically insulating material Substances 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000001746 injection moulding Methods 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 238000004382 potting Methods 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 238000004026 adhesive bonding Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45139—Silver (Ag) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
Definitions
- Lumineszenzkonversionsmaterial is emitted.
- the radiation of the luminescence conversion material is preferably excited by the electromagnetic radiation of the at least one light-emitting diode chip of the light-emitting diode.
- the reflective element is for example for diffuse reflection of
- this non-visible radiation is reflected by the reflective element comprising porous polytetrafluoroethylene, preferably non-directional.
- Reflection of electromagnetic radiation is provided, wherein the reflective element is attached to the carrier and the reflective element comprises porous polytetrafluoroethylene.
- Light-emitting diode as described here, can be produced. That is, all the features described for the light emitting diode are also disclosed for the method and vice versa.
- a carrier which at least in places comprises a thermoplastic. That is, at least locations of the outer surface of the carrier are with a
- the light-emitting diode according to the exemplary embodiment of FIG. 2 comprises three light-emitting diode chips 2 a, 2 b, 2 c, which may be suitable, for example, for generating blue, red and green light.
- the bottom plate 10 is formed as a printed circuit board.
- the bottom plate 10 is formed of a ceramic material to which
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102009033287A DE102009033287A1 (de) | 2009-07-15 | 2009-07-15 | Leuchtdiode und Verfahren zur Herstellung einer Leuchtdiode |
PCT/EP2010/059217 WO2011006754A1 (de) | 2009-07-15 | 2010-06-29 | Leuchtdiode und verfahren zur herstellung einer leuchtdiode |
Publications (1)
Publication Number | Publication Date |
---|---|
EP2454765A1 true EP2454765A1 (de) | 2012-05-23 |
Family
ID=42670645
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP10725804A Withdrawn EP2454765A1 (de) | 2009-07-15 | 2010-06-29 | Leuchtdiode und verfahren zur herstellung einer leuchtdiode |
Country Status (7)
Country | Link |
---|---|
US (1) | US8581288B2 (ja) |
EP (1) | EP2454765A1 (ja) |
JP (1) | JP5685249B2 (ja) |
KR (1) | KR101649287B1 (ja) |
CN (1) | CN102473825B (ja) |
DE (1) | DE102009033287A1 (ja) |
WO (1) | WO2011006754A1 (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102009058421A1 (de) * | 2009-12-16 | 2011-06-22 | OSRAM Opto Semiconductors GmbH, 93055 | Verfahren zur Herstellung eines Gehäuses für ein optoelektronisches Halbleiterbauteil, Gehäuse und optoelektronisches Halbleiterbauteil |
DE102010026344A1 (de) * | 2010-07-07 | 2012-01-12 | Osram Opto Semiconductors Gmbh | Leuchtdiode |
JP5902823B2 (ja) | 2011-11-17 | 2016-04-13 | ルーメンス カンパニー リミテッド | 発光素子パッケージ及びそれを備えるバックライトユニット |
KR102304741B1 (ko) | 2013-11-07 | 2021-09-24 | 루미리즈 홀딩 비.브이. | Led를 둘러싸는 내부 전반사 층을 갖는 led를 위한 기판 |
US9834456B2 (en) | 2015-06-08 | 2017-12-05 | Rayvio Corporation | Ultraviolet disinfection system |
US10246348B2 (en) | 2015-06-08 | 2019-04-02 | Rayvio Corporation | Ultraviolet disinfection system |
US9540252B1 (en) | 2015-06-08 | 2017-01-10 | Rayvio Corporation | Ultraviolet disinfection system |
DE102017110850A1 (de) | 2017-05-18 | 2018-11-22 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zum Herstellen eines optoelektronischen Bauelements |
TWI648878B (zh) * | 2018-05-15 | 2019-01-21 | 東貝光電科技股份有限公司 | Led發光源、led發光源之製造方法及其直下式顯示器 |
DE102018132542A1 (de) | 2018-12-17 | 2020-06-18 | Osram Opto Semiconductors Gmbh | Optoelektronische leuchtvorrichtung und herstellungsverfahren |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006135496A2 (en) * | 2005-06-10 | 2006-12-21 | Cree, Inc. | Led package |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3003500B2 (ja) | 1994-04-28 | 2000-01-31 | ダイキン工業株式会社 | ポリテトラフルオロエチレン複合多孔膜 |
US5596450A (en) | 1995-01-06 | 1997-01-21 | W. L. Gore & Associates, Inc. | Light reflectant surface and method for making and using same |
DE10153259A1 (de) | 2001-10-31 | 2003-05-22 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement |
US6950220B2 (en) * | 2002-03-18 | 2005-09-27 | E Ink Corporation | Electro-optic displays, and methods for driving same |
US20040032728A1 (en) * | 2002-08-19 | 2004-02-19 | Robert Galli | Optical assembly for LED chip package |
WO2004087889A1 (en) | 2003-04-04 | 2004-10-14 | Novozymes A/S | Mash viscosity reduction |
JP4183175B2 (ja) | 2003-04-21 | 2008-11-19 | 京セラ株式会社 | 発光素子収納用パッケージおよび発光装置 |
DE102004014207A1 (de) * | 2004-03-23 | 2005-10-13 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauteil mit mehrteiligem Gehäusekörper |
DE102004053116A1 (de) | 2004-11-03 | 2006-05-04 | Tridonic Optoelectronics Gmbh | Leuchtdioden-Anordnung mit Farbkonversions-Material |
US7537374B2 (en) * | 2005-08-27 | 2009-05-26 | 3M Innovative Properties Company | Edge-lit backlight having light recycling cavity with concave transflector |
US8525402B2 (en) | 2006-09-11 | 2013-09-03 | 3M Innovative Properties Company | Illumination devices and methods for making the same |
US7601989B2 (en) * | 2007-03-27 | 2009-10-13 | Philips Lumileds Lighting Company, Llc | LED with porous diffusing reflector |
WO2008144656A2 (en) * | 2007-05-20 | 2008-11-27 | 3M Innovative Properties Company | Light recycling hollow cavity type display backlight |
JP2009032943A (ja) | 2007-07-27 | 2009-02-12 | Japan Gore Tex Inc | 発光素子用プリント配線基板 |
WO2009075530A2 (en) * | 2007-12-13 | 2009-06-18 | Amoleds Co., Ltd. | Semiconductor and manufacturing method thereof |
EP2255231A1 (en) * | 2008-02-07 | 2010-12-01 | 3M Innovative Properties Company | Hollow backlight with structured films |
CN101952646B (zh) * | 2008-02-22 | 2014-01-29 | 3M创新有限公司 | 具有选定的输出光通量分布的背光源及使用该背光源的显示*** |
-
2009
- 2009-07-15 DE DE102009033287A patent/DE102009033287A1/de not_active Withdrawn
-
2010
- 2010-06-29 CN CN201080031876.2A patent/CN102473825B/zh not_active Expired - Fee Related
- 2010-06-29 WO PCT/EP2010/059217 patent/WO2011006754A1/de active Application Filing
- 2010-06-29 JP JP2012519958A patent/JP5685249B2/ja not_active Expired - Fee Related
- 2010-06-29 US US13/382,313 patent/US8581288B2/en not_active Expired - Fee Related
- 2010-06-29 KR KR1020127004034A patent/KR101649287B1/ko active IP Right Grant
- 2010-06-29 EP EP10725804A patent/EP2454765A1/de not_active Withdrawn
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006135496A2 (en) * | 2005-06-10 | 2006-12-21 | Cree, Inc. | Led package |
Also Published As
Publication number | Publication date |
---|---|
JP5685249B2 (ja) | 2015-03-18 |
CN102473825A (zh) | 2012-05-23 |
US8581288B2 (en) | 2013-11-12 |
KR101649287B1 (ko) | 2016-08-18 |
JP2012533182A (ja) | 2012-12-20 |
KR20120039023A (ko) | 2012-04-24 |
US20120132947A1 (en) | 2012-05-31 |
WO2011006754A1 (de) | 2011-01-20 |
DE102009033287A1 (de) | 2011-01-20 |
CN102473825B (zh) | 2015-02-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
17P | Request for examination filed |
Effective date: 20111221 |
|
AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK SM TR |
|
DAX | Request for extension of the european patent (deleted) | ||
17Q | First examination report despatched |
Effective date: 20160415 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |
|
18D | Application deemed to be withdrawn |
Effective date: 20160826 |