JP2012129528A - 浅いトレンチ分離および基板貫通ビアの集積回路設計への統合 - Google Patents
浅いトレンチ分離および基板貫通ビアの集積回路設計への統合 Download PDFInfo
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- 238000004544 sputter deposition Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76837—Filling up the space between adjacent conductive structures; Gap-filling properties of dielectrics
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
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- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
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Abstract
【解決手段】ICを製造する方法は、第1の側、および第2の対向する側を有する基板を用意すること、基板の第1の側にSTI開口を形成すること、および基板の第1の側に部分的TSV開口を形成すること、および部分的TSV開口を延長することを含む。延長された部分的TSV開口は、STI開口より基板内への深さが深い。方法はまた、STI開口を第1の固体材料で充填すること、および延長された部分的TSV開口を第2の固体材料で充填することを含む。STI開口、部分的TSV開口、または延長された部分的TSV開口のいずれも、基板の第2の側の外面を貫通しない。少なくとも、STI開口および部分的TSV開口は同時に形成され、またはSTI開口および延長された部分的TSV開口は同時に充填される。
【選択図】図1
Description
本出願は、本出願の譲受人に譲渡され、参照によりその全体が本明細書に組み込まれている、M.A.Bachman、S.M.Merchant、およびJ.Osenbach(「Bachmanら」)への「METHOD OF FABRICATION OF THROUGH−SUBSTRATE VIAS」という名称の米国特許出願第12/969,836号(整理番号L09−0808)に関連する。
Claims (10)
- 集積回路を製造する方法であって、
第1の側、および第2の対向する側を有する基板を用意すること、
前記基板の前記第1の側に浅いトレンチ分離開口を形成すること、
前記基板の前記第1の側に部分的基板貫通ビア開口を形成すること、
前記部分的基板貫通ビア開口を延長することであって、前記延長された部分的基板貫通ビア開口は、前記浅いトレンチ分離開口より前記基板内への深さが深い、前記部分的基板貫通ビア開口を延長すること、
前記浅いトレンチ分離開口を第1の固体材料で充填すること、および
前記延長された部分的基板貫通ビア開口を第2の固体材料で充填すること
を含み、
前記浅いトレンチ分離開口、前記部分的基板貫通ビア開口、または前記延長された部分的基板貫通ビアのいずれも、前記基板の前記第2の側の外面を貫通せず、
少なくとも、前記浅いトレンチ分離開口および前記部分的基板貫通ビア開口は同時に形成され、または前記浅いトレンチ分離開口および前記延長された部分的基板貫通ビア開口は同時に充填される、方法。 - 前記基板の前記第1の側上に少なくとも1つの能動または受動電子構成要素を形成することをさらに含み、前記能動または受動電子構成要素は、前記基板の前記第1の側上の隣接する能動または受動電子構成要素から、前記能動または受動電子構成要素と前記隣接する能動または受動電子構成要素との間に配置された前記浅いトレンチ分離開口によって電気的に分離される、請求項1に記載の方法。
- 前記基板の前記第1の側上に少なくとも1つの能動または受動電子構成要素を形成することをさらに含み、前記能動または受動電子構成要素は、隣接する延長された部分的基板貫通ビア開口から、前記能動または受動電子構成要素と前記隣接する延長された部分的基板貫通ビア開口との間に配置された前記浅いトレンチ分離開口によって電気的に分離される、請求項1に記載の方法。
- 第2の側の基板貫通ビア開口が前記基板の前記第2の側から前記第1の側まで延びるように、前記基板の前記第2の側から、前記延長された部分的基板貫通ビア開口の内部の前記第2の固体材料の少なくとも一部分を除去することをさらに含む、請求項1に記載の方法。
- 前記第2の側の基板貫通ビア開口を導電性材料で充填することをさらに含む、請求項4に記載の方法。
- 第1の側、および第2の対向する側を有する基板と、
浅いトレンチ分離構造であって、前記浅いトレンチ分離構造の一方の端部は、前記基板の内部に埋め込まれ、前記浅いトレンチ分離構造の反対側の端部は、前記基板の前記第1の側の表面に位置する、浅いトレンチ分離構造と、
基板貫通ビアであって、前記基板貫通ビアの一方の端部は、前記基板の前記第1の側の前記表面に位置し、前記基板貫通ビアの反対側の端部は、前記基板の前記第2の側の表面に位置する、基板貫通ビアと
を備え、
前記浅いトレンチ分離構造を画定する開口内、および前記基板貫通ビアを画定する開口内には、同じ絶縁層が配置される、集積回路。 - 前記浅いトレンチ分離構造が、前記基板貫通ビアと、前記基板の前記第1の側上に位置する受動または能動電気的構成要素との間に配置される、請求項6に記載の集積回路。
- 前記基板の前記第1の側上に位置し、前記第1の側上の基板貫通ビア開口を覆う導電層をさらに含む、請求項6に記載の集積回路。
- 前記基板の前記第1の側上に金属ラインと、層間誘電体層とをさらに含み、前記金属ラインの少なくとも1つは、前記基板の前記第1の側上に配置された受動または能動電気的構成要素を、前記基板貫通ビアを覆う導電層に電気的に接続する、請求項6に記載の集積回路。
- 前記基板が、前記基板貫通ビアによって1つまたは複数の他の基板に相互接続された、請求項6に記載の集積回路。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/969,852 | 2010-12-16 | ||
US12/969,852 US8742535B2 (en) | 2010-12-16 | 2010-12-16 | Integration of shallow trench isolation and through-substrate vias into integrated circuit designs |
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JP2012129528A true JP2012129528A (ja) | 2012-07-05 |
JP5670306B2 JP5670306B2 (ja) | 2015-02-18 |
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JP2011273948A Active JP5670306B2 (ja) | 2010-12-16 | 2011-12-15 | 浅いトレンチ分離および基板貫通ビアの集積回路設計への統合 |
Country Status (6)
Country | Link |
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US (2) | US8742535B2 (ja) |
EP (1) | EP2466634B1 (ja) |
JP (1) | JP5670306B2 (ja) |
KR (1) | KR101475108B1 (ja) |
CN (1) | CN102543829B (ja) |
TW (1) | TWI463584B (ja) |
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JP7391741B2 (ja) | 2020-03-23 | 2023-12-05 | 株式会社東芝 | 構造体 |
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CN102543829B (zh) | 2015-01-21 |
US8742535B2 (en) | 2014-06-03 |
KR101475108B1 (ko) | 2014-12-22 |
US9613847B2 (en) | 2017-04-04 |
TWI463584B (zh) | 2014-12-01 |
US20120153430A1 (en) | 2012-06-21 |
US20140220760A1 (en) | 2014-08-07 |
EP2466634A1 (en) | 2012-06-20 |
KR20120067941A (ko) | 2012-06-26 |
JP5670306B2 (ja) | 2015-02-18 |
CN102543829A (zh) | 2012-07-04 |
TW201230221A (en) | 2012-07-16 |
EP2466634B1 (en) | 2019-06-19 |
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