JP2012084871A - 半導体装置、およびその製造方法、ならびにデータ処理装置 - Google Patents
半導体装置、およびその製造方法、ならびにデータ処理装置 Download PDFInfo
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- JP2012084871A JP2012084871A JP2011200436A JP2011200436A JP2012084871A JP 2012084871 A JP2012084871 A JP 2012084871A JP 2011200436 A JP2011200436 A JP 2011200436A JP 2011200436 A JP2011200436 A JP 2011200436A JP 2012084871 A JP2012084871 A JP 2012084871A
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Abstract
【解決手段】半導体装置は、第1の面を有する材料層と、材料層内に設けられ、第1の面に開口部を有する溝を備える。溝は、開口部に接し1以上のスキャロップ形成溝を有するテーパー部と、おおむね垂直な側壁を有する垂直部を有する。スキャロップ形成溝の幅は、垂直部の溝幅よりも大きくなっている。
【選択図】図1
Description
なお、図21及び22では、スキャロッピングは実際よりも誇張して示している。
第1の面を有する材料層と、
前記材料層内に設けられ、第1の面に開口部を有する溝と、
を備え、
前記溝は、
前記開口部に接し、1以上のスキャロップ形成溝を有するテーパー部と、
おおむね垂直な側壁を有する垂直部と、
を有し、
前記スキャロップ形成溝の幅が前記垂直部の溝幅よりも大きいことを特徴とする半導体装置に関する。
材料層の第1の面からその厚み方向の内側に向かって、1以上のスキャロップ形成溝を含む溝テーパー部を形成する工程と、
前記材料層内の前記溝テーパー部の下におおむね垂直な側壁を有する垂直部を形成する工程と、
を有し、
前記スキャロップ形成溝は、その幅が前記垂直部の溝幅よりも大きいことを特徴とする半導体装置の製造方法に関する。
プロセッサーと、
DRAMメモリモジュールと、
前記プロセッサーとDRAMメモリモジュールとを接続するシステムバスと、
を備えるデータ処理装置であって、
前記データ処理装置に含まれる半導体装置は、
第1の面を有する材料層と、
前記材料層内に設けられ、第1の面に開口部を有する溝と、
を備え、
前記溝は、
前記開口部に接し、1以上のスキャロップ形成溝を有するテーパー部と、
おおむね垂直な側壁を有する垂直部と、
を有し、
前記スキャロップ形成溝の幅が前記垂直部の溝幅よりも大きいことを特徴とするデータ処理装置に関する。
本実施例を適用した具体的な半導体装置について、図1〜図10を参照して説明する。
図1に、本実施例に係る半導体装置として、貫通電極(TSV:Through Silicon Via)を備えた半導体チップの断面図を示す。半導体チップは、例えば、DRAM、SRAM、フラッシュメモリ等の記憶デバイスや、MPU、DSP等の演算処理デバイスをあげることができる。
図2に示すように、P型のシリコン(Si)からなる半導体基板50を用意して、貫通電極形成領域TVに絶縁リング形成のための溝150cを形成する。溝150cは、後に形成する貫通プラグVの周りを囲むように、平面視でリング状に形成される。溝150cは、半導体基板50の第1の面5からその厚み方向に向かって形成され、第1の面5と同じ高さの位置には開口部25を有する。なお、図2では、簡略化のため溝側面のスキャロッピングは記載を省略した(図10以降の図面においても同様である)。
ガス種類:SF6
ガス流量:230〜270sccm
圧力:80〜100mTorr
ソースパワー:2300〜2700W。
ガス種類:C4F8
ガス流量:230〜270sccm
圧力:60〜80mTorr
ソースパワー:2300〜2700W。
ガス種類:SF6
ガス流量:230〜270sccm
圧力:60〜80mTorr
ソースパワー:2300〜2700W。
図15に示すように、貫通電極形成領域TVに配置された最上層の第3配線112は、表面バンプを形成するためのパッドとして機能する。第3配線112の上面を露出させるように保護膜113に開口(ホール)を形成し、第3配線に接続する表面バンプ140を形成する。表面バンプ140は、チタン(Ti)膜上に銅を積層したシード膜141、銅バンプ142、表面金属膜143の3層により形成されている。表面金属膜143としては、膜厚2〜4μmのスズと銀の合金膜(Sn−Ag膜)を例示できる。銅バンプ142は高さ(バンプ膜厚)を10〜12μm程度になるように、電界メッキ法により形成する。
本変形例は、絶縁溝150cを形成した後、更に、スキャロッピングによる端部を平滑化して丸めるためのエッチング工程を設ける点が第1実施例とは異なる。以下では、第1実施例と異なる工程のみを説明し、その他の工程の説明は省略する。
本変形例は、絶縁溝150cを形成した後、更に、絶縁溝150cの内壁側面上に絶縁膜を形成する工程、絶縁溝150cの内壁側面のエッチングを行う工程を有する点が第1実施例とは異なる。以下では、第1実施例と異なる工程のみを説明し、その他の工程の説明は省略する。
次に、第1実施例の応用例について説明する。
図18は、第1実施例で説明した方法によって形成した、貫通電極を備えたDRAMチップを2枚積層して、高集積化したパッケージの断面模式図である。半導体チップ323、324は、本実施例を用いて形成したDRAMのコアチップであり、メモリセル回路とメモリセルへのデータ入出力用の周辺回路から形成されている。貫通電極の具体的な構造は先に説明した通りであり、図18では詳細な記載を省略した。また、図18では絶縁リングは省略した。
図20は本実施例のデータ処理装置500の概略構成図である。データ処理装置500には、演算処理デバイス(Processor)520とDRAMメモリモジュール530が含まれており、システムバス510を介して相互に接続されている。演算処理デバイス520は、MPU(Micro Processing Unit)や、DSP(Digital Signal Processor)等である。DRAMメモリモジュール530は、本実施例を用いて形成したDRAMチップを備えている。また、固定データの格納用に、ROM(Read Only Memory)540がシステムバス510に接続されていてもよい。
1.材料層の第1の面からその厚み方向の内側に向かって、1以上のスキャロップ形成溝を有するテーパー部を形成する工程と、
前記材料層内の、前記テーパー部の下に、複数のスキャロップ形成溝を有する垂直部を形成する工程と、
を有する半導体装置の製造方法であって、
前記テーパー部のスキャロップ形成溝は、前記材料層の厚み方向と垂直な断面における断面積S(n)(nは1以上の整数)が前記厚み方向を内側に進むにつれて変化すると共に前記S(n)の最大値S(n)max(nは1以上の整数)を有し、
前記垂直部のスキャロップ形成溝は、前記材料層の厚み方向と垂直な断面における断面積S’(a)(aは1以上の整数)が前記厚み方向を内側に進むにつれて変化すると共に各々の前記スキャロップ形成溝において前記S’(a)の最大値S’(a)max(aは1以上の整数)が一定の値となるように、各スキャロップ形成溝を形成する工程を2回以上、繰り返して形成され、
前記S’(a)maxは何れのS(n)maxよりも小さくなるように前記垂直部を形成する、半導体装置の製造方法。
前記材料層の第1の面上にマスクパターンを設ける工程と、
前記マスクパターンを用いたエッチングにより、前記材料層内に、第1のスキャロップ形成溝を設ける工程と、
前記第1のスキャロップ形成溝の内壁上に、保護膜を堆積させる工程と、
エッチングにより、前記第1のスキャロップ形成溝の底部に堆積された保護膜を除去する工程と、
を有する上記1に記載の半導体装置の製造方法。
前記材料層の第1の面からその厚み方向の内側に進むにつれて、各スキャロップ形成溝の前記S(n)maxは徐々に減少し、
前記材料層の第1の面からその厚み方向に関して最も離れた最下のスキャロップ形成溝のS(n)maxは前記S’(a)maxよりも大きい、上記2に記載の半導体装置の製造方法。
下記工程(A1)〜(A3)からなるスキャロップ形成溝形成サイクルを1回以上、繰り返すことにより、前記第1のスキャロップ形成溝に連通するように、前記材料層内に1以上のスキャロップ形成溝を設ける工程を有する、上記3に記載の半導体装置の製造方法。
(A1)前記マスクパターン及びスキャロップ形成溝内に残留した保護膜をマスクに用いたエッチングにより、前記材料層の第1の面からその厚み方向に関して最も離れたスキャロップ形成溝の下に、スキャロップ形成溝を新たに設ける工程、
(A2)新たに設けた前記スキャロップ形成溝の内壁上に、保護膜を堆積させる工程、
(A3)エッチングにより、新たに設けた前記スキャロップ形成溝の底部に堆積された保護膜を除去する工程。
前記各スキャロップ形成溝を形成する工程として、下記工程(B1)〜(B3)からなるスキャロップ形成溝形成サイクルを、2回以上、繰り返すことにより、前記テーパー部に連通するように、前記材料層内に2以上のスキャロップ形成溝を設ける、上記1〜5の何れか一つに記載の半導体装置の製造方法。
(B1)前記マスクパターン及びスキャロップ形成溝内に残留した保護膜をマスクに用いたエッチングにより、前記材料層の第1の面からその厚み方向に関して最も離れたスキャロップ形成溝の下に、新たにスキャロップ形成溝を設ける工程と、
(B2)新たに設けた前記スキャロップ形成溝の内壁上に、保護膜を堆積させる工程、
(B3)エッチングにより、新たに設けた前記スキャロップ形成溝の底部に堆積された保護膜を除去する工程。
前記テーパー部を形成する工程および前記垂直部を形成する工程において、SF6ガスを用いたドライエッチングを行う工程を含む、上記1〜7の何れか一つに記載の半導体装置の製造方法。
前記保護膜を堆積させる工程はC4F8ガスを用いたデポジション工程を含む、上記2〜7の何れか一つに記載の半導体装置の製造方法。
連通した一連の前記テーパー部及び垂直部は、前記材料層内を貫通すると共に前記電極を囲むように形成され、
前記テーパー部及び垂直部を形成後に更に、前記テーパー部及び垂直部内に絶縁膜を埋め込むことにより、前記電極の外側を囲む絶縁リングを形成する工程を有する、上記1〜9の何れか一つに記載の半導体装置の製造方法。
前記材料層の第1の面からその内側に向かって設けられた1以上のスキャロップ形成溝を有するテーパー部と、
前記材料層内の、前記テーパー部の下に設けられた複数のスキャロップ形成溝を有する垂直部と、
を有する半導体装置であって、
前記テーパー部のスキャロップ形成溝は、前記材料層の厚み方向と垂直な断面における断面積S(n)(nは1以上の整数)が前記厚み方向を内側に進むにつれて変化すると共に前記S(n)の最大値S(n)max(nは1以上の整数)を有し、
前記垂直部のスキャロップ形成溝は、前記材料層の厚み方向と垂直な断面における断面積S’(a)(aは1以上の整数)が前記厚み方向を内側に進むにつれて変化すると共に各々の前記スキャロップ形成溝において前記S’(a)の最大値S’(a)max(aは1以上の整数)が一定の値であり、
前記S’(a)maxは何れのS(n)maxよりも小さい、半導体装置。
前記材料層の第1の面からその厚み方向の内側を進むにつれて、各スキャロップ形成溝の前記S(n)maxは徐々に減少し、
前記材料層の第1の面からその厚み方向に関して最も離れた最下のスキャロップ形成溝のS(n)maxは前記S’(a)maxよりも大きい、上記11に記載の半導体装置。
連通した一連の前記テーパー部及び垂直部は、前記材料層をその厚み方向に貫通し、
前記テーパー部及び垂直部内には、絶縁膜が埋め込まれ、
前記テーパー部及び垂直部内に埋め込まれた絶縁膜は、絶縁リングであり、
前記絶縁リングは、前記材料層内を貫通すると共に前記電極の外側を囲むように形成されている、上記11又は12に記載の半導体装置。
前記半導体装置の各々は前記電極を介して相互に接続され、
前記データ処理装置は、さらに演算処理デバイスを備え、
システムバスを介して、前記演算処理デバイスと前記半導体装置の各々が接続されたデータ処理装置。
2 マスクパターン
3−1、3−2、3−3、3−10 スキャロップ形成溝
4、4a 保護膜
5 第1の面
6 第2の面
7 端部
8 絶縁膜
10 絶縁膜
11 厚み方向
22、31、31−1、31−2 開口
25 開口部
30 半導体基板
32 マスクパターン
33、33a 保護膜
35 絶縁膜
36 空洞(ボイド)
50 半導体基板
51 ゲート絶縁膜
57 素子分離領域
83 ライナー膜
85、86、98、105、107、110 層間絶縁膜
93 金属膜
100 半導体チップ
106、109、112 配線
111 シリコン窒化膜
113 保護膜
114 N型ウェル
120 P型不純物拡散層
121 N型不純物拡散層
124、126 周辺コンタクトホール
125 シリサイド層
127 局所配線
130、131、132 コンタクトプラグ
140 表面バンプ
141 シード膜
142 銅バンプ
143 表面金属膜
150 絶縁リング
150a 内側の側面
150b 外側の側面
150c 絶縁溝
151 開口(ホール)
155 シリコン窒化膜
160 裏面バンプ
161 シード膜
162 銅バンプ
163 裏面金属膜
200 貫通電極
321 ベース基板
322、323、324 半導体チップ
323、324 半導体チップ
323a 裏面バンプ
323b 表面バンプ
323c 貫通電極
325 アタッチフィルム
326 リードフレーム
327 半田ボール
328 配線層
329 端子
330 樹脂
400 プリント基板
401 入出力端子(I/O端子)
402 DRAMパッケージ
403 制御チップ
500 データ処理装置
502 演算処理デバイス
510 システムバス
520 演算処理デバイス
530 DRAMメモリモジュール
540 ROM(Read Only Memory)
550 不揮発性記憶デバイス
560 入出力装置
D デバイス領域
S スキャロッピング
T1 テーパー部
T2 垂直部
TV 貫通電極形成領域
V 貫通プラグ
Claims (20)
- 第1の面を有する材料層と、
前記材料層内に設けられ、第1の面に開口部を有する溝と、
を備え、
前記溝は、
前記開口部に接し、1以上のスキャロップ形成溝を有するテーパー部と、
おおむね垂直な側壁を有する垂直部と、
を有し、
前記スキャロップ形成溝の幅が前記垂直部の溝幅よりも大きいことを特徴とする半導体装置。 - 前記テーパー部は、2以上のスキャロップ形成溝を有し、前記開口部に近いスキャロップ形成溝の幅は前記開口部から遠いスキャロップ形成溝の幅よりも大きいことを特徴とする請求項1に記載の半導体装置。
- 前記垂直部は、おおむね同等の幅を有する複数のスキャロップ形成溝を有することを特徴とする請求項1または2に記載の半導体装置。
- 前記スキャロップ形成溝のスキャロップ形成側壁の端部は、とがった先端部のない滑らかな表面を有することを特徴とする請求項1〜3の何れか1項に記載の半導体装置。
- 前記溝は半導体基板を貫通するように設けられていることを特徴とする請求項1〜4の何れか1項に記載の半導体装置。
- 前記溝には導電材料が埋設されていることを特徴とする請求項1〜5の何れか1項に記載の半導体装置。
- 前記溝には絶縁材料が埋設されていることを特徴とする請求項1〜5の何れか1項に記載の半導体装置。
- 前記溝は、半導体基板内を貫通するように設けられた貫通電極を囲むように設けられ、絶縁リングを形成していることを特徴とする請求項1〜6の何れか1項に記載の半導体装置。
- 前記貫通電極、絶縁リングを備えた半導体基板を複数、有し、
前記複数の半導体基板は積層され、
前記複数の半導体基板は、前記貫通電極を介して互いに電気的に接続される、請求項8に記載の半導体装置。 - 材料層の第1の面からその厚み方向の内側に向かって、1以上のスキャロップ形成溝を含む溝テーパー部を形成する工程と、
前記材料層内の前記溝テーパー部の下におおむね垂直な側壁を有する垂直部を形成する工程と、
を有し、
前記スキャロップ形成溝は、その幅が前記垂直部の溝幅よりも大きいことを特徴とする半導体装置の製造方法。 - 前記溝テーパー部は、2以上のスキャロップ形成溝を有し、前記第1の面に近いスキャロップ形成溝の幅は前記第1の面から遠いスキャロップ形成溝の幅よりも大きいことを特徴とする請求項10に記載の半導体装置の製造方法。
- 前記垂直部は、おおむね同等の幅を有する複数のスキャロップ形成溝を有することを特徴とする請求項10または11に記載の半導体装置の製造方法。
- 1つの前記スキャロップ形成溝は、下記工程(1)〜(3)からなるスキャロップ形成溝形成サイクルを1サイクル行うことで形成することを特徴とする請求項10〜12の何れか1項に記載の半導体装置の製造方法。
(1)露出している前記材料層を等方性エッチングして第2の溝を形成する工程、
(2)前記第2の溝の内壁上に保護膜を形成する工程、
(3)前記第2の溝の内壁底面上に形成された保護膜を除去する工程。 - 前記溝テーパー部を形成する工程では、前記スキャロップ形成溝形成サイクルを1サイクル行うごとに、前記工程(1)におけるエッチング時間を減少させることを特徴とする請求項13に記載の半導体装置の製造方法。
- 前記材料層はシリコンからなる半導体基板であって、
前記スキャロップ形成溝形成サイクルの工程(1)では、SF6ガスを用いることを特徴とする請求項13または14に記載の半導体装置の製造方法。 - 前記保護膜はカーボンを含有するポリマーを主成分とし、
前記スキャロップ形成溝形成サイクルの工程(2)では、C4F8ガスを用いることを特徴とする請求項13〜15の何れか1項に記載の半導体装置の製造方法。 - 前記溝テーパー部および垂直部を形成した後、
前記第2の溝の内壁の保護膜を除去する工程と、
前記スキャロップ形成溝の側壁の端部を丸める工程と、
を有することを特徴とする請求項13〜16の何れか1項に記載の半導体装置の製造方法。 - 前記スキャロップ形成溝の側壁の端部を丸める工程では、等方性エッチングを用いることを特徴とする請求項17に記載の半導体装置の製造方法。
- 前記スキャロップ形成溝の側壁の端部を丸める工程は、
第2の材料層を成膜する工程と、
エッチング工程と、
を含むことを特徴とする請求項17または18に記載の半導体装置の製造方法。 - プロセッサーと、
DRAMメモリモジュールと、
前記プロセッサーとDRAMメモリモジュールとを接続するシステムバスと、
を備えるデータ処理装置であって、
前記データ処理装置に含まれる半導体装置は、
第1の面を有する材料層と、
前記材料層内に設けられ、第1の面に開口部を有する溝と、
を備え、
前記溝は、
前記開口部に接し、1以上のスキャロップ形成溝を有するテーパー部と、
おおむね垂直な側壁を有する垂直部と、
を有し、
前記スキャロップ形成溝の幅が前記垂直部の溝幅よりも大きいことを特徴とするデータ処理装置。
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