JP2011165861A - 炭化珪素半導体素子 - Google Patents
炭化珪素半導体素子 Download PDFInfo
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- JP2011165861A JP2011165861A JP2010026458A JP2010026458A JP2011165861A JP 2011165861 A JP2011165861 A JP 2011165861A JP 2010026458 A JP2010026458 A JP 2010026458A JP 2010026458 A JP2010026458 A JP 2010026458A JP 2011165861 A JP2011165861 A JP 2011165861A
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 30
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 29
- 239000004065 semiconductor Substances 0.000 title claims abstract description 21
- 239000000758 substrate Substances 0.000 claims description 11
- 230000005684 electric field Effects 0.000 abstract description 22
- 230000015556 catabolic process Effects 0.000 abstract description 17
- 230000015572 biosynthetic process Effects 0.000 abstract description 6
- 230000005669 field effect Effects 0.000 abstract description 2
- 229910044991 metal oxide Inorganic materials 0.000 abstract description 2
- -1 silicon carbide metal oxide Chemical class 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 49
- 230000009467 reduction Effects 0.000 description 13
- 238000000034 method Methods 0.000 description 10
- 230000007423 decrease Effects 0.000 description 8
- 230000014509 gene expression Effects 0.000 description 7
- 239000011229 interlayer Substances 0.000 description 7
- 238000005468 ion implantation Methods 0.000 description 6
- 230000003068 static effect Effects 0.000 description 5
- 238000004364 calculation method Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Images
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
【解決手段】炭化珪素MOSFETの基本単位構造において、ウェル領域3のチャネル形成部3cのドーピング濃度は上面部で最小になり、ウェル領域3の底部のドーピング濃度はソース領域4の下の部分3aとチャネル形成部3cの下の部分3bとで同じである。JFET領域5のドーピング濃度をNJFET[/cm3]、基本単位構造におけるJFET領域5の最小幅をLJFET[μm]とそれぞれ定義すると、NJFET≧6×1015+3.8×1016×2LJFET -2.5、NJFET≦8×1015+1.4×1017×2LJFET -3.15、0.6μm≦2LJFET≦2μmの関係を充たす。
【選択図】図1
Description
NJFET=6×1015+3.8×1016×2LJFET -2.5 …(1)
NJFET=7.6×1015+9.3×1016×2LJFET -2.9 …(2)
NJFET=8×1015+1.4×1017×2LJFET -3.15 …(3)
NJFET=6.5×1016×2LJFET -1.7 …(4)
NJFET≧6×1015+3.8×1016×2LJFET -2.5 …(5)
NJFET≦8×1015+1.4×1017×2LJFET -3.15 …(6)
0.6μm≦2LJFET≦2μm …(7)
NJFET≧6×1015+3.8×1016×2LJFET -2.5 …(8)
NJFET≦7.6×1015+9.3×1016×2LJFET -2.9 …(9)
0.6μm≦2LJFET≦2μm …(10)
NJFET≧6.5×1016×2LJFET -1.7 …(11)
NJFET≦8×1015+1.4×1017×2LJFET -3.15 …(12)
0.6μm≦2LJFET≦2μm …(13)
NJFET≧6.5×1016×2LJFET -1.7 …(14)
NJFET≦7.6×1015+9.3×1016×2LJFET -2.9 …(15)
0.6μm≦2LJFET≦2μm …(16)
0.8μm≦2LJFET≦1.5μm …(17)
Claims (5)
- SiC基板と、
前記SiC基板上に形成された第1導電型のドリフト層と、
前記ドリフト層の上部に選択的に形成された第2導電型のウェル領域と、
前記ウェル領域内に選択的に形成された第1導電型のソース領域と、
前記ドリフト層上部において前記ウェル領域に隣接し、当該ドリフト層の他の部分よりドーピング濃度の高い第1導電型のJFET領域と、
前記ドリフト層上にゲート絶縁膜を介して配設され、前記ソース領域、前記JFET領域およびその間の前記ウェル領域上に跨るゲート電極と
を有する基本単位構造を備え、
前記ウェル領域において、前記JFET領域と前記ソース領域との間の部分であるチャネル形成部のドーピング濃度は上面部で最小になり、前記ウェル領域の底部のドーピング濃度は前記ソース領域の下の部分と前記チャネル形成部の下の部分とで同じであり、
前記JFET領域のドーピング濃度をNJFET[/cm3]、基本単位構造における前記JFET領域の最小幅をLJFET[μm]とそれぞれ定義すると、
NJFET≧6×1015+3.8×1016×2LJFET -2.5
NJFET≦8×1015+1.4×1017×2LJFET -3.15
0.6μm≦2LJFET≦2μm
の関係を充たす
ことを特徴とする炭化珪素半導体素子。 - 前記チャネル形成部は、前記ドリフト層の上面に向けて狭まる形状である
請求項1記載の炭化珪素半導体素子。 - NJFET≦7.6×1015+9.3×1016×2LJFET -2.9
の関係をさらに充たす
請求項1または請求項2記載の炭化珪素半導体素子。 - NJFET≧6.5×1016×2LJFET -1.7
の関係をさらに充たす
請求項1から請求項3のいずれか1つに記載の炭化珪素半導体素子。 - 0.8μm≦2LJFET≦1.5μm
の関係をさらに充たす
請求項1から請求項4のいずれか1つに記載の炭化珪素半導体素子。
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013161448A1 (ja) * | 2012-04-27 | 2013-10-31 | 富士電機株式会社 | 半導体装置 |
CN103579341A (zh) * | 2012-07-31 | 2014-02-12 | 株式会社东芝 | 晶体管以及用于制造该晶体管的方法 |
WO2022046444A1 (en) * | 2020-08-27 | 2022-03-03 | Cree, Inc. | Power silicon carbide based semiconductor devices with improved short circuit capabilities and methods of making such devices |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2004036655A1 (ja) * | 2002-10-18 | 2004-04-29 | National Institute Of Advanced Industrial Science And Technology | 炭化ケイ素半導体装置及びその製造方法 |
JP2006511961A (ja) * | 2002-12-20 | 2006-04-06 | クリー インコーポレイテッド | 縦型jfet制限型シリコンカーバイドパワー金属酸化膜半導体電界効果トランジスタおよび縦型jfet制限型シリコンカーバイド金属酸化膜半導体電界効果トランジスタを製造する方法 |
-
2010
- 2010-02-09 JP JP2010026458A patent/JP2011165861A/ja active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2004036655A1 (ja) * | 2002-10-18 | 2004-04-29 | National Institute Of Advanced Industrial Science And Technology | 炭化ケイ素半導体装置及びその製造方法 |
JP2006511961A (ja) * | 2002-12-20 | 2006-04-06 | クリー インコーポレイテッド | 縦型jfet制限型シリコンカーバイドパワー金属酸化膜半導体電界効果トランジスタおよび縦型jfet制限型シリコンカーバイド金属酸化膜半導体電界効果トランジスタを製造する方法 |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013161448A1 (ja) * | 2012-04-27 | 2013-10-31 | 富士電機株式会社 | 半導体装置 |
JP2013232561A (ja) * | 2012-04-27 | 2013-11-14 | National Institute Of Advanced Industrial & Technology | 半導体装置 |
US9356100B2 (en) | 2012-04-27 | 2016-05-31 | Fuji Electric Co., Ltd. | Semiconductor device |
CN103579341A (zh) * | 2012-07-31 | 2014-02-12 | 株式会社东芝 | 晶体管以及用于制造该晶体管的方法 |
JP2014029952A (ja) * | 2012-07-31 | 2014-02-13 | Toshiba Corp | トランジスタ及びその製造方法 |
US9018637B2 (en) | 2012-07-31 | 2015-04-28 | Kabushiki Kaisha Toshiba | Transistor and method for manufacturing same |
US9099342B2 (en) | 2012-07-31 | 2015-08-04 | Kabushiki Kaisha Toshiba | Transistor and method for manufacturing same |
WO2022046444A1 (en) * | 2020-08-27 | 2022-03-03 | Cree, Inc. | Power silicon carbide based semiconductor devices with improved short circuit capabilities and methods of making such devices |
US11843061B2 (en) | 2020-08-27 | 2023-12-12 | Wolfspeed, Inc. | Power silicon carbide based semiconductor devices with improved short circuit capabilities and methods of making such devices |
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