JP5928429B2 - 半導体装置及びその製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims description 86
- 238000004519 manufacturing process Methods 0.000 title claims description 21
- 239000012535 impurity Substances 0.000 claims description 104
- 229910021332 silicide Inorganic materials 0.000 claims description 35
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 35
- 239000000758 substrate Substances 0.000 claims description 35
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 13
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 11
- 230000003647 oxidation Effects 0.000 claims description 11
- 238000007254 oxidation reaction Methods 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical group [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical group [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 5
- 229910052698 phosphorus Inorganic materials 0.000 claims description 5
- 239000011574 phosphorus Substances 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 148
- 238000009792 diffusion process Methods 0.000 description 93
- 150000002500 ions Chemical class 0.000 description 19
- 239000011229 interlayer Substances 0.000 description 14
- 238000005468 ion implantation Methods 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 8
- 229910010271 silicon carbide Inorganic materials 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 238000009413 insulation Methods 0.000 description 5
- 125000004437 phosphorous atom Chemical class 0.000 description 5
- 230000002411 adverse Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910005883 NiSi Inorganic materials 0.000 description 1
- 229910005881 NiSi 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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Description
本発明の半導体装置は、半導体基板の表面に形成されたゲート酸化膜と、当該ゲート酸化膜上に形成されたゲート電極と、主電極と接続され前記半導体基板の表面において形成された高濃度不純物層と、を具備する半導体装置であって、前記高濃度不純物層においてドーピングされた不純物種には、燐(P)である第1不純物種と、アルゴン(Ar)である第2不純物種とが含まれ、前記高濃度不純物層の表面において、前記第2不純物種の濃度は、前記第1不純物種の濃度よりも高く、前記高濃度不純物層における前記第1不純物種の深さ方向における濃度のピークは、前記第2不純物種の深さ方向における濃度のピークよりも深い箇所とされ、前記ゲート電極は、前記ゲート電極の下でチャネルが形成される領域から、前記高濃度不純物層の上において、前記ゲート電極の下でチャネルが形成される領域の上の前記ゲート酸化膜よりも厚く形成された前記ゲート酸化膜の上まで、延伸して形成されたことを特徴とする。
本発明の半導体装置は、前記高濃度不純物層が表面から掘り下げられた箇所で前記高濃度不純物層と前記主電極とが接続された構成を具備することを特徴とする。
本発明の半導体装置は、前記高濃度不純物層と前記主電極とがシリサイド電極を介して接続されたことを特徴とする。
本発明の半導体装置において、前記シリサイド電極はニッケル(Ni)シリサイドで構成されたことを特徴とする。
本発明の半導体装置において、前記高濃度不純物層における不純物濃度は5×1019cm−3以上であることを特徴とする。
本発明の半導体装置において、前記半導体基板は炭化珪素(SiC)で構成されたことを特徴とする。
本発明の半導体装置の製造方法は、前記半導体装置の製造方法であって、前記第1不純物種の飛程が前記第2不純物種の飛程よりも大きくなる条件で前記半導体基板に対して前記第1不純物種及び前記第2不純物種をイオン注入することによって前記高濃度不純物層を形成する高濃度不純物層形成工程と、前記半導体基板を熱酸化することによって前記ゲート酸化膜を形成するゲート酸化工程と、前記ゲート酸化膜上にゲート電極を形成するゲート電極形成工程と、前記高濃度不純物層に前記主電極を接続する主電極接続工程と、を具備することを特徴とする。
本発明の半導体装置の製造方法は、前記主電極接続工程において、前記主電極を接続する前に、前記主電極が接続される領域における前記高濃度不純物層の表面を掘り下げるエッチングを行うことを特徴とする。
本発明の半導体装置の製造方法は、シリサイド電極を介して前記主電極を前記高濃度不純物層に接続することを特徴とする。
本発明の半導体装置の製造方法において、前記半導体基板は炭化珪素(SiC)で構成されたことを特徴とする。
20、90 半導体基板
21、91 n層
22、92 p型拡散層
24、94 n++拡散層(高濃度不純物層)
30、81 ゲート酸化膜
31、82 ゲート電極
32、83 層間絶縁層
33、84 シリサイド電極
34、85 ソース電極(主電極)
51 第2不純物種イオン
52 第1不純物種イオン
93 n+拡散層
Claims (10)
- 半導体基板の表面に形成されたゲート酸化膜と、当該ゲート酸化膜上に形成されたゲート電極と、主電極と接続され前記半導体基板の表面において形成された高濃度不純物層と、を具備する半導体装置であって、
前記高濃度不純物層においてドーピングされた不純物種には、燐(P)である第1不純物種と、アルゴン(Ar)である第2不純物種とが含まれ、
前記高濃度不純物層の表面において、前記第2不純物種の濃度は、前記第1不純物種の濃度よりも高く、
前記高濃度不純物層における前記第1不純物種の深さ方向における濃度のピークは、前記第2不純物種の深さ方向における濃度のピークよりも深い箇所とされ、
前記ゲート電極は、前記ゲート電極の下でチャネルが形成される領域から、前記高濃度不純物層の上において、前記ゲート電極の下でチャネルが形成される領域の上の前記ゲート酸化膜よりも厚く形成された前記ゲート酸化膜の上まで、延伸して形成されたことを特徴とする半導体装置。 - 前記高濃度不純物層が表面から掘り下げられた箇所で前記高濃度不純物層と前記主電極とが接続された構成を具備することを特徴とする請求項1に記載の半導体装置。
- 前記高濃度不純物層と前記主電極とがシリサイド電極を介して接続されたことを特徴とする請求項1又は2に記載の半導体装置。
- 前記シリサイド電極はニッケル(Ni)シリサイドで構成されたことを特徴とする請求項3に記載の半導体装置。
- 前記高濃度不純物層における不純物濃度は5×1019cm−3以上であることを特徴とする請求項1から請求項4までのいずれか1項に記載の半導体装置。
- 前記半導体基板は炭化珪素(SiC)で構成されたことを特徴とする請求項1から請求項5までのいずれか1項に記載の半導体装置。
- 請求項1に記載の半導体装置の製造方法であって、
前記第1不純物種の飛程が前記第2不純物種の飛程よりも大きくなる条件で前記半導体基板に対して前記第1不純物種及び前記第2不純物種をイオン注入することによって前記高濃度不純物層を形成する高濃度不純物層形成工程と、
前記半導体基板を熱酸化することによって前記ゲート酸化膜を形成するゲート酸化工程と、
前記ゲート酸化膜上にゲート電極を形成するゲート電極形成工程と、
前記高濃度不純物層に前記主電極を接続する主電極接続工程と、
を具備することを特徴とする半導体装置の製造方法。 - 前記主電極接続工程において、前記主電極を接続する前に、前記主電極が接続される領域における前記高濃度不純物層の表面を掘り下げるエッチングを行うことを特徴とする請求項7に記載の半導体装置の製造方法。
- シリサイド電極を介して前記主電極を前記高濃度不純物層に接続することを特徴とする請求項7又は8に記載の半導体装置の製造方法。
- 前記半導体基板は炭化珪素(SiC)で構成されたことを特徴とする請求項7から請求項9までのいずれか1項に記載の半導体装置の製造方法。
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US5322802A (en) * | 1993-01-25 | 1994-06-21 | North Carolina State University At Raleigh | Method of fabricating silicon carbide field effect transistor |
JPH0964346A (ja) * | 1995-08-21 | 1997-03-07 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
US5770485A (en) * | 1997-03-04 | 1998-06-23 | Advanced Micro Devices, Inc. | MOSFET device with an amorphized source and fabrication method thereof |
JP2000340520A (ja) * | 1999-05-26 | 2000-12-08 | Denso Corp | 半導体装置及びその製造方法 |
US6407014B1 (en) * | 1999-12-16 | 2002-06-18 | Philips Electronics North America Corporation | Method achieving higher inversion layer mobility in novel silicon carbide semiconductor devices |
US6303508B1 (en) * | 1999-12-16 | 2001-10-16 | Philips Electronics North America Corporation | Superior silicon carbide integrated circuits and method of fabricating |
JP3881840B2 (ja) * | 2000-11-14 | 2007-02-14 | 独立行政法人産業技術総合研究所 | 半導体装置 |
JP4792645B2 (ja) * | 2001-03-12 | 2011-10-12 | 株式会社デンソー | 炭化珪素半導体装置の製造方法 |
JP2004304155A (ja) * | 2003-03-19 | 2004-10-28 | Seiko Instruments Inc | 半導体装置の製造方法 |
EP1519419B1 (en) * | 2003-09-24 | 2018-02-21 | Nissan Motor Co., Ltd. | Semiconductor device and manufacturing method thereof |
US7407837B2 (en) * | 2004-01-27 | 2008-08-05 | Fuji Electric Holdings Co., Ltd. | Method of manufacturing silicon carbide semiconductor device |
JP2006024880A (ja) * | 2004-06-09 | 2006-01-26 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
JP4842527B2 (ja) * | 2004-08-24 | 2011-12-21 | パナソニック株式会社 | 半導体装置の製造方法 |
US7569900B2 (en) * | 2004-11-16 | 2009-08-04 | Kabushiki Kaisha Toshiba | Silicon carbide high breakdown voltage semiconductor device |
JP4761942B2 (ja) * | 2004-11-16 | 2011-08-31 | 株式会社東芝 | 半導体装置 |
JP4872217B2 (ja) * | 2005-02-16 | 2012-02-08 | 富士電機株式会社 | 炭化珪素半導体素子の製造方法 |
JP4903439B2 (ja) * | 2005-05-31 | 2012-03-28 | 株式会社東芝 | 電界効果トランジスタ |
US20080108190A1 (en) * | 2006-11-06 | 2008-05-08 | General Electric Company | SiC MOSFETs and self-aligned fabrication methods thereof |
JP4286877B2 (ja) * | 2007-03-13 | 2009-07-01 | Okiセミコンダクタ株式会社 | 炭化珪素半導体装置およびその製造方法 |
JP5339698B2 (ja) * | 2007-08-20 | 2013-11-13 | 新日本無線株式会社 | 半導体装置の製造方法 |
JP2009182271A (ja) * | 2008-01-31 | 2009-08-13 | Toshiba Corp | 炭化珪素半導体装置 |
JP2012253293A (ja) | 2011-06-07 | 2012-12-20 | Sumitomo Electric Ind Ltd | 半導体装置 |
JP5777455B2 (ja) * | 2011-09-08 | 2015-09-09 | 株式会社東芝 | 半導体装置および半導体装置の製造方法 |
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