JP2011003608A - 半導体装置 - Google Patents
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Abstract
【解決手段】主表面を有する半導体基板SUBの内部には、p-エピタキシャル領域EP1が形成されている。p-エピタキシャル領域EP1の主表面側には、p-エピタキシャル領域EP2が形成されている。p-エピタキシャル領域EP2の主表面側には、n型ドリフト領域DRIとp型ボディ領域BOとが形成されている。p-エピタキシャル領域EP1とp-エピタキシャル領域EP2との間には、これらの領域を電気的に分離するためにフローティング電位のn+埋め込み領域NBが形成されている。n+埋め込み領域NBとp-エピタキシャル領域EP2との間には、p-エピタキシャル領域EP2よりも高いp型不純物濃度を有するp+埋め込み領域PBが形成されている。
【選択図】図1
Description
(実施の形態1)
まず図1を用いて本実施の形態の半導体装置の構成について説明する。
図4を参照して、まずエピタキシャル成長により、半導体基板SUBにp-エピタキシャル領域EP1が形成される。
アナログ・デジタル混載技術においては、実施の形態1のようなLDMOSトランジスタが、CMOS(Complementary MOS)、バイポーラトランジスタ、ダイオード、メモリー素子などと同一プロセスで1チップ上に形成される場合がある。そのようなチップ上で実施の形態1のトランジスタをレイアウトする場合、そのトランジスタを他の素子と電気的に分離する必要がある。本実施の形態においては、その電気的分離のための構造について図19および図20を用いて説明する。
図21および図22を参照して、本実施の形態においては、LDMOSトランジスタのアレー配置領域ARAを他の素子と電気的に分離するためのトレンチ分離が形成されている。このトレンチ分離は、分離用溝TRSと、充填絶縁層BISとを有している。
本実施の形態では、アレー配置領域ARAを他の素子から電気的に分離するためにトレンチ分離が用いられているため、実施の形態2のn型分離領域SRを設けた場合のようなn型不純物の拡散によるトランジスタへの影響を考慮する必要がない。このため、実施の形態2の拡散分離の場合よりも、アレー配置領域ARAとトレンチ分離との間隔を狭めることができ(たとえば間隔を0にすることもでき)、実施の形態2よりもチップシュリンクが可能となる。
図23を参照して、本実施の形態においては、トレンチ分離の分離用溝TRSがp+埋め込み領域PBに接していない(貫通していない)点において実施の形態3の構成と異なっている。このため、本実施の形態においては、分離用溝TRSとp+埋め込み領域PBとの間に、p-エピタキシャル領域EP2が位置している。
上記の実施の形態1〜4においては、横型高耐圧素子としてLDMOSトランジスタについて説明したが、横型高耐圧素子はIGBT(Insulated Gate Bipolar Transistor)またはダイオードであってもよい。
Claims (9)
- 主表面を有する半導体基板と、
前記半導体基板内に形成された第1導電型の第1領域と、
前記半導体基板内であって前記第1領域の前記主表面側に形成された第1導電型の第2領域と、
前記半導体基板内であって前記第2領域の前記主表面側に形成され、かつ前記第2領域との間でpn接合を構成する第2導電型の第3領域と、
前記第2領域の前記主表面側において前記第2領域と接するとともに前記第3領域と隣り合うように前記半導体基板内に形成され、かつ前記第2領域よりも高い第1導電型の不純物濃度を有する第1導電型の第4領域と、
前記第1領域と前記第2領域とを電気的に分離するように前記第1領域と前記第2領域との間の前記半導体基板内に形成され、かつフローティング電位となるように構成された第2導電型の第5領域と、
前記第5領域と前記第2領域との間の前記半導体基板内に形成され、かつ前記第2領域よりも高い第1導電型の不純物濃度を有する第1導電型の第6領域とを備えた、半導体装置。 - 前記第2、第3および第4領域を含む横型素子の形成領域の周囲を前記主表面において取り囲むとともに、前記主表面から前記第5領域に達するように形成された第2導電型の分離用不純物領域をさらに備えた、請求項1に記載の半導体装置。
- 前記半導体基板は、前記第2、第3および第4領域を含む横型素子の形成領域の周囲を前記主表面において取り囲むとともに、前記主表面から前記第5領域に少なくとも達するように形成された分離用溝を有する、請求項1に記載の半導体装置。
- 前記分離用溝は、前記第6領域を貫通して前記第5領域に達している、請求項3に記載の半導体装置。
- 前記分離用溝は、前記第6領域に接しないで前記第5領域に達している、請求項3に記載の半導体装置。
- 前記第3領域と接するように前記主表面に形成され、かつ前記第3領域よりも高い第1導電型の不純物濃度を有する第1導電型のドレイン領域と、
前記第4領域とpn接合を構成するように前記主表面に形成された第1導電型のソース領域と、
前記ドレイン領域と前記ソース領域とに挟まれた前記第4領域の部分と絶縁して対向するように形成されたゲート電極とをさらに備えた、請求項1〜5のいずれかに記載の半導体装置。 - 前記第3領域とpn接合を構成するように前記主表面に形成された第2導電型のコレクタ領域と、
前記第4領域とpn接合を構成するように前記主表面に形成された第1導電型のエミッタ領域と、
前記コレクタ領域と前記エミッタ領域とに挟まれた前記第4領域の部分と絶縁して対向するように形成されたゲート電極とをさらに備えた、請求項1〜5のいずれかに記載の半導体装置。 - 前記第3領域と接するように前記主表面に形成され、かつ前記第3領域よりも高い第1導電型の不純物濃度を有する第1導電型のカソードコンタクト領域と、
前記第4領域と接するように前記主表面に形成され、かつ前記第4領域よりも高い第2導電型の不純物濃度を有する第2導電型のアノードコンタクト領域とさらに備えた、請求項1〜5のいずれかに記載の半導体装置。 - 前記第3領域内の前記主表面に選択的に形成された絶縁膜をさらに備えた、請求項1〜8のいずれかに記載の半導体装置。
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