JP2010116453A - フィルム状接着剤、それを用いた半導体パッケージ及びその製造方法 - Google Patents
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Abstract
【解決手段】接着剤組成物からなるフィルム状接着剤であって、
前記接着剤組成物が、全塩素濃度が250ppm以下である低塩素含有率液状エポキシ樹脂(A)、ジシクロペンタジエン型固形エポキシ樹脂(B)、イオントラップ剤(C)、及び平均粒子径が3〜20μmであるシリカ充填剤(D)を含有するものであり、且つ前記接着剤組成物中の前記シリカ充填剤(D)の含有比率が固形分換算で50〜70質量%であることを特徴とするフィルム状接着剤。
【選択図】なし
Description
前記接着剤組成物が、全塩素濃度が250ppm以下である低塩素含有率液状エポキシ樹脂(A)、ジシクロペンタジエン型固形エポキシ樹脂(B)、イオントラップ剤(C)、及び平均粒子径が3〜20μmであるシリカ充填剤(D)を含有するものであり、且つ前記接着剤組成物中の前記シリカ充填剤(D)の含有比率が固形分換算で50〜70質量%であることを特徴とするものである。
で表される樹脂であることが好ましい。
前記第1の半導体素子をダイシングテープから脱離し、その後金属ワイヤにより配線基板と電気的に接続されている第2の半導体素子上に、前記金属ワイヤの一部が前記接着剤層に埋まるように、前記第1の半導体素子を接着せしめる工程と、
を含むことを特徴とする方法である。また、本発明の半導体パッケージは、前記半導体パッケージの製造方法により得られるものである。
前記接着剤組成物が、全塩素濃度が250ppm以下である低塩素含有率液状エポキシ樹脂(A)、ジシクロペンタジエン型固形エポキシ樹脂(B)、イオントラップ剤(C)、及び平均粒子径が3〜20μmであるシリカ充填剤(D)を含有するものであり、且つ前記接着剤組成物中の前記シリカ充填剤(D)の含有比率が固形分換算で50〜70質量%であるものである。
熱硬化前のフィルム状接着剤を約10g切り取り、熱風オーブンを用いて温度180℃にて1時間の熱処理を行い、熱硬化後のサンプルを作製した。容器に熱硬化後のサンプル約2gと純水50mLを入れ、温度121℃にて20時間の熱処理を行い、水に塩素イオンを抽出させた。得られた抽出水の塩素イオン濃度(単位:ppm)をイオンクロマトグラフィにより測定した。
熱硬化前のフィルム状接着剤を約10g切り取り、金型(形状:円板状、直径:5cmΦ、厚み:3mm)に入れた後に温度150℃の熱板上でフィルム状接着剤を溶融させ成型した。成型後のサンプルを室温下で冷却し、温度180℃にて1時間の熱処理を行い、熱硬化後のサンプルを作製した。得られた熱硬化後のサンプルについて、初期の質量(W0)及び温度85℃、相対湿度85%の条件下において100時間放置後の質量(W100)を測定し、その測定値から吸水率〔{(W100−W0)/W0}×100〕(単位:質量%)を求めた。
先ず、熱硬化前のフィルム状接着剤を半導体素子に貼り付けて接着剤付き半導体素子を作製した。一方、銅材質のワイヤが設けられた半導体素子をリードフレーム基板(材質:42Arroy系金属、厚み:125μm)上に搭載し、銅ワイヤ(直径:25μm)をリードフレーム基板に接合した。
XD−1000(ジシクロペンタジエン型固形エポキシ樹脂、軟化点:約70℃、日本化薬製)55g、YP−70(フェノキシ樹脂、軟化点:約70℃、東都化成製)30g、YD−825GSH(ビスフェノールA型低塩素型液状エポキシ樹脂、東都化成製)49gを秤量し、83gのMIBKを溶剤として500mlのセパラブルフラスコ中、温度110℃で2時間加熱攪拌して樹脂ワニスを得た。得られた樹脂ワニス217gを800mlのプラネタリーミキサーに秤量し、FB−3SDX(球状シリカ、平均粒子径:3μm、デンカ社製)186gを加えて混合したものを3本ロールで混練して混合物を得た。得られた混合物に、IXE−6107(ビスマス/ジルコニア系イオントラップ剤、東亞合成製)7g及び2PHZ−PW(イミダゾール型硬化剤、四国化成株式会社)9gを加えてプラネタリーミキサーで攪拌混合後、真空脱泡して接着剤組成物を得た。得られた接着剤組成物を厚さ50μmの離型処理されたPETフィルム上に塗布後、温度80℃で10分間、温度150℃で1分間の熱風乾燥を行い、厚みが60μmのフィルム状接着剤を得た。
低塩素型液状エポキシ樹脂として、YD−825GSHに代えてLX−01(ビスフェノールA型低塩素型液状エポキシ樹脂、ダイソー製)49gを用いた以外は実施例1と同様にしてフィルム状接着剤を得た。
シリカ充填剤FB−3SDXの添加量を350gとした以外は実施例1と同様にしてフィルム状接着剤を得た。
イオントラップ剤として、IXE−6107に代えてIXE−550(ビスマス系イオントラップ剤、東亞合成製)7gを用いた以外は実施例1と同様にしてフィルム状接着剤を得た。
YD−825GSHに代えてJER828(ビスフェノールA型液状エポキシ樹脂、ジャパンエポキシレジン製)49gを用い、イオントラップ剤を使用せず、更にシリカ充填剤FB−3SDXの添加量を146gとした以外は実施例1と同様にしてフィルム状接着剤を得た。
シリカ充填剤FB−3SDXの添加量を100gとした以外は実施例1と同様にしてフィルム状接着剤を得た。
YD−825GSHに代えてJER828(ビスフェノールA型液状エポキシ樹脂、ジャパンエポキシレジン製)49gを用いた以外は実施例1と同様にしてフィルム状接着剤を得た。
<溶融粘度及びダイアタッチ可能温度領域の評価>
実施例1〜4及び比較例1〜3で得られたフィルム状接着剤について、塩素イオン濃度、吸水率及び腐食性を、上記の方法で評価した。得られた結果を表1に示す。また、実施例1〜4及び比較例1〜3で得られたフィルム状接着剤における接着剤組成物の配合組成、並びに接着剤組成物中のシリカ充填剤(D)の含有比率(固形分換算)を表1に示す。
Claims (6)
- 接着剤組成物からなるフィルム状接着剤であって、
前記接着剤組成物が、全塩素濃度が250ppm以下である低塩素含有率液状エポキシ樹脂(A)、ジシクロペンタジエン型固形エポキシ樹脂(B)、イオントラップ剤(C)、及び平均粒子径が3〜20μmであるシリカ充填剤(D)を含有するものであり、且つ前記接着剤組成物中の前記シリカ充填剤(D)の含有比率が固形分換算で50〜70質量%であることを特徴とするフィルム状接着剤。 - 前記イオントラップ剤(C)が、塩素イオン交換容量が2.5meq/g以上のものであり、且つビスマス系化合物及びジルコニア系化合物からなる群から選択される少なくとも一つの無機化合物であることを特徴とする請求項1に記載のフィルム状接着剤。
- 前記フィルム状接着剤の厚みが10〜150μmであることを特徴とする請求項1〜3のうちのいずれか一項に記載のフィルム状接着剤。
- 複数の半導体素子を備えている半導体ウェハの一方の表面上に請求項1〜4のうちのいずれか一項に記載のフィルム状接着剤を形成し、前記フィルム状接着剤の表面上にダイシングテープを貼り合せた後に、前記フィルム状接着剤と前記半導体ウェハとを同時にダイシングすることにより接着剤層を備える第1の半導体素子を得る工程と、
前記第1の半導体素子をダイシングテープから脱離し、その後金属ワイヤにより配線基板と電気的に接続されている第2の半導体素子上に、前記金属ワイヤの一部が前記接着剤層に埋まるように、前記第1の半導体素子を接着せしめる工程と、
を含むことを特徴とする半導体パッケージの製造方法。 - 請求項5に記載の半導体パッケージの製造方法により得られるものであることを特徴とする半導体パッケージ。
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CN109312205B (zh) * | 2016-05-27 | 2021-06-29 | 奥林巴斯株式会社 | 粘接剂组合物、超声波振子、内窥镜装置和超声波内窥镜装置 |
JP2020072149A (ja) * | 2018-10-30 | 2020-05-07 | 日立化成株式会社 | 半導体用フィルム状接着剤、半導体装置の製造方法及び半導体装置 |
JP7183702B2 (ja) | 2018-10-30 | 2022-12-06 | 昭和電工マテリアルズ株式会社 | 半導体用フィルム状接着剤、半導体用フィルム状接着剤の製造方法、半導体装置の製造方法及び半導体装置 |
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