JP2009528969A5 - - Google Patents

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JP2009528969A5
JP2009528969A5 JP2008552497A JP2008552497A JP2009528969A5 JP 2009528969 A5 JP2009528969 A5 JP 2009528969A5 JP 2008552497 A JP2008552497 A JP 2008552497A JP 2008552497 A JP2008552497 A JP 2008552497A JP 2009528969 A5 JP2009528969 A5 JP 2009528969A5
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catalyst
temperature
eutectic point
carbon precursor
particle size
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JP2008552497A
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JP2009528969A (en
JP5550833B2 (en
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Priority claimed from PCT/US2007/002513 external-priority patent/WO2008016388A2/en
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Claims (25)

炭素前駆ガスを、触媒の融点未満かつ触媒の共晶点より約５℃〜約８０℃高い温度で、担体に担持された触媒に接触させ、単層カーボンナノチューブ（ＳＷＮＴ）を形成するステップ
を含むＳＷＮＴを調製する化学蒸着法。 Contacting a carbon precursor gas with a catalyst supported on a support at a temperature below the melting point of the catalyst and about 5 ° C. to about 80 ° C. above the eutectic point of the catalyst to form single-walled carbon nanotubes (SWNTs). Chemical vapor deposition method for preparing SWNTs. 前記炭素前駆ガスがメタンであることを特徴とする請求項１に記載の方法。   The method according to claim 1, wherein the carbon precursor gas is methane. 前記炭素前駆ガスが不活性ガスおよび水素をさらに含むことを特徴とする請求項２に記載の方法。   The method of claim 2, wherein the carbon precursor gas further comprises an inert gas and hydrogen. 前記不活性ガスがアルゴン、ヘリウム、窒素、水素またはそれらの混合物であることを特徴とする請求項３に記載の方法。   4. The method of claim 3, wherein the inert gas is argon, helium, nitrogen, hydrogen or a mixture thereof. 前記触媒が鉄、モリブデンまたはそれらの混合物であることを特徴とする請求項１に記載の方法。   The process according to claim 1, wherein the catalyst is iron, molybdenum or a mixture thereof. 前記触媒の粒径が１ｎｍ〜１０ｎｍであることを特徴とする請求項１に記載の方法。   The method according to claim 1, wherein the catalyst has a particle size of 1 nm to 10 nm. 前記触媒の粒径が約１ｎｍであることを特徴とする請求項６に記載の方法。   The method of claim 6, wherein the catalyst has a particle size of about 1 nm. 前記触媒の粒径が約３ｎｍであることを特徴とする請求項６に記載の方法。   The method of claim 6, wherein the catalyst has a particle size of about 3 nm. 前記触媒の粒径が約５ｎｍであることを特徴とする請求項６に記載の方法。   The method of claim 6, wherein the catalyst has a particle size of about 5 nm. 前記担体がＡｌ２Ｏ３、ＳｉＯ３、ＭｇＯおよびゼオライトからなる群より選ばれる粉末酸化物であることを特徴とする請求項６に記載の方法。 The method according to claim 6, wherein the carrier is a powder oxide selected from the group consisting of Al 2 O 3 , SiO 3 , MgO and zeolite. 前記粉末酸化物がＡｌ２Ｏ３であることを特徴とする請求項１０に記載の方法。 The method according to claim 10, wherein the powdered oxide is Al 2 O 3 . 前記温度が共晶点より約８０℃高いことを特徴とする請求項１に記載の方法。 The method of claim 1, wherein the temperature is about 80 ° C. above the eutectic point. 前記温度が共晶点より約５０℃高いことを特徴とする請求項１に記載の方法。   The method of claim 1, wherein the temperature is about 50 ° C. above the eutectic point. 前記ＳＷＮＴの直径が約０．８ｎｍ〜約２ｎｍであることを特徴とする請求項１に記載の方法。   The method of claim 1, wherein the SWNT has a diameter of about 0.8 nm to about 2 nm. 炭素前駆ガスを、Ａｌ２Ｏ３、ＳｉＯ３、ＭｇＯおよびゼオライトからなる群より選ばれる担体上の触媒に接触させ；そして
触媒の融点と触媒の共晶点との間の反応温度を維持する
工程によって製造される単層カーボンナノチューブ（ＳＷＮＴ）。 Contacting the carbon precursor gas with a catalyst on a support selected from the group consisting of Al 2 O 3 , SiO 3 , MgO and zeolite; and maintaining a reaction temperature between the melting point of the catalyst and the eutectic point of the catalyst Single-walled carbon nanotubes (SWNT) produced by 前記炭素前駆ガスがメタンであることを特徴とする請求項１５に記載の工程。 The process according to claim 15 , wherein the carbon precursor gas is methane. 前記炭素前駆ガスが不活性ガスおよび水素をさらに含むことを特徴とする請求項１６に記載の工程。 The process of claim 16 , wherein the carbon precursor gas further comprises an inert gas and hydrogen. 前記不活性ガスがアルゴン、ヘリウム、窒素、水素またはそれらの混合物であることを特徴とする請求項１７に記載の工程。 The process according to claim 17 , wherein the inert gas is argon, helium, nitrogen, hydrogen or a mixture thereof. 前記触媒が鉄、モリブデンまたはそれらの混合物であることを特徴とする請求項１５に記載の工程。 The process of claim 15 , wherein the catalyst is iron, molybdenum or a mixture thereof. 前記触媒の粒径が１ｎｍ〜１０ｎｍであることを特徴とする請求項１５に記載の工程。 The process according to claim 15 , wherein the catalyst has a particle size of 1 nm to 10 nm. 前記担体がＡｌ２Ｏ３であることを特徴とする請求項１５に記載の工程。 The process according to claim 15 , wherein the support is Al 2 O 3 . 前記触媒と前記担体の比が約１：１〜約１：５０であることを特徴とする請求項１５に記載の工程。 The process of claim 15 , wherein the ratio of the catalyst to the support is from about 1: 1 to about 1:50. 前記温度が共晶点より約１０℃〜約１００℃高いことを特徴とする請求項１５に記載の工程。 The process of claim 15 , wherein the temperature is about 10 ° C. to about 100 ° C. above the eutectic point. 前記温度が共晶点より約５０℃高いことを特徴とする請求項１５に記載の工程。 The process of claim 15 wherein the temperature is about 50 ° C above the eutectic point. 前記温度が共晶点より約８０℃高いことを特徴とする請求項１５に記載の工程。 The process of claim 15 wherein the temperature is about 80 ° C above the eutectic point.
JP2008552497A 2006-01-30 2007-01-30 Method and apparatus for high quality single-walled carbon nanotube growth Expired - Fee Related JP5550833B2 (en)

Applications Claiming Priority (3)

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US76381306P 2006-01-30 2006-01-30
US60/763,813 2006-01-30
PCT/US2007/002513 WO2008016388A2 (en) 2006-01-30 2007-01-30 Method and apparatus for growth of high quality carbon single-walled nanotubes

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JP2009528969A JP2009528969A (en) 2009-08-13
JP2009528969A5 true JP2009528969A5 (en) 2010-03-18
JP5550833B2 JP5550833B2 (en) 2014-07-16

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WO (1) WO2008016388A2 (en)

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