JP2009003187A - 液晶表示装置 - Google Patents
液晶表示装置 Download PDFInfo
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- JP2009003187A JP2009003187A JP2007164240A JP2007164240A JP2009003187A JP 2009003187 A JP2009003187 A JP 2009003187A JP 2007164240 A JP2007164240 A JP 2007164240A JP 2007164240 A JP2007164240 A JP 2007164240A JP 2009003187 A JP2009003187 A JP 2009003187A
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- transparent electrode
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- crystal display
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- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 56
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 239000010409 thin film Substances 0.000 claims description 29
- 239000003990 capacitor Substances 0.000 claims description 26
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 238000003860 storage Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 description 96
- 238000000034 method Methods 0.000 description 49
- 239000011229 interlayer Substances 0.000 description 26
- 238000010586 diagram Methods 0.000 description 16
- 239000010410 layer Substances 0.000 description 16
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 14
- 229910052581 Si3N4 Inorganic materials 0.000 description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 12
- 238000004544 sputter deposition Methods 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 10
- 229920005591 polysilicon Polymers 0.000 description 10
- 101000702394 Homo sapiens Signal peptide peptidase-like 2A Proteins 0.000 description 8
- 101000702393 Homo sapiens Signal peptide peptidase-like 2B Proteins 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 7
- 102100028007 Cystatin-SA Human genes 0.000 description 5
- 101000722958 Homo sapiens Cystatin-SA Proteins 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 5
- 102100038387 Cystatin-SN Human genes 0.000 description 4
- 101000884768 Homo sapiens Cystatin-SN Proteins 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 101100166255 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) CEP3 gene Proteins 0.000 description 3
- 101100495436 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) CSE4 gene Proteins 0.000 description 3
- FFBHFFJDDLITSX-UHFFFAOYSA-N benzyl N-[2-hydroxy-4-(3-oxomorpholin-4-yl)phenyl]carbamate Chemical compound OC1=C(NC(=O)OCC2=CC=CC=C2)C=CC(=C1)N1CCOCC1=O FFBHFFJDDLITSX-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 210000002858 crystal cell Anatomy 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000005224 laser annealing Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- -1 phosphorus ions Chemical class 0.000 description 2
- 239000000565 sealant Substances 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910000952 Be alloy Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- MGRWKWACZDFZJT-UHFFFAOYSA-N molybdenum tungsten Chemical compound [Mo].[W] MGRWKWACZDFZJT-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004071 soot Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Geometry (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Abstract
【解決手段】TFT基板SUBに、該基板の面と平行に積層された第1透明電極PSL1と第2透明電極PSL2および第3透明電極PSL3の3つの層を形成し、第1透明電極PSL1と第2透明電極PSL2の間、前記第2透明電極PSL2と第3透明電極PSL3の間に液晶容量の補助容量を2つ形成する。
【選択図】図2
Description
塗布法による厚さ900nmの樹脂膜を製膜して2層目の層間絶縁膜IL2とし、コンタクト穴を加工する(ホト工程6)。スパッタ法により厚さ50nmのITO膜を製膜し、第2の補助容量用の電極PSL1を形成する。この透明電極PSL1には画素電極と同じ電位を供給する(ホト工程7)。
Claims (8)
- 薄膜トランジスタアレイが形成された基板を持つ液晶表示装置であって、
前記基板は、該基板の面と平行に積層された第1透明電極と第2透明電極および第3透明電極の3つの層を有し、
前記第1透明電極と前記第2透明電極の間、および前記第2透明電極と前記第3透明電極の間に液晶容量の補助容量が形成されていることを特徴とする液晶表示装置。 - 請求項1において、
前記第3透明電極は前記3つの透明電極の最上層で、かつ前記基板の面と平行な面内で分割された櫛型あるいはスリット状の電極であることを特徴とする液晶表示装置。 - 請求項1又は2において、
前記第3透明電極は前記3つの透明電極の最上層で、前記第1透明電極は前記3つの透明電極の最下層であり、前記第3透明電極と前記第1透明電極は電気的に接続されていることを特徴とする液晶表示装置。 - 請求項1又は2において、
前記第3透明電極は前記3つの透明電極の最上層で画素電極を構成し、前記第1透明電極は前記3つの透明電極の最下層を構成し、前記第3透明電極と前記第1透明電極の間にある中層である第2透明電極は共通電極であることを特徴とする液晶表示装置。 - 薄膜トランジスタアレイが形成された基板を持つ液晶表示装置であって、
前記薄膜トランジスタアレイを構成する薄膜トランジスタのゲート電極は、複数の金属層からなる積層構造であり、
前記基板は、該基板の面と平行に積層された第1透明電極と第2透明電極および第3透明電極の3つの層を有し、
前記第1透明電極と前記第2透明電極の間、および前記第2透明電極と前記第3透明電極の間に液晶容量の補助容量が形成され、
前記透明電極のうち1つの透明電極が前記積層ゲート電極のうちの1層と同層であることを特徴とする液晶表示装置。 - 請求項5において、
前記第3透明電極は前記3つの透明電極の最上層で、かつ前記基板の面と平行な面内で分割された櫛型あるいはスリット状の電極であることを特徴とする液晶表示装置。 - 請求項5又は6において、
前記第3透明電極は前記3つの透明電極の最上層で、前記第1透明電極は前記3つの透明電極の最下層であり、前記第3透明電極と前記第1透明電極は電気的に接続されていることを特徴とする液晶表示装置。 - 請求項5又は6において、
前記第3透明電極は前記3つの透明電極の最上層で画素電極を構成し、前記第1透明電極は前記3つの透明電極の最下層を構成し、前記第3透明電極と前記第1透明電極の間にある中層である第2透明電極は共通電極であることを特徴とする液晶表示装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007164240A JP5305190B2 (ja) | 2007-06-21 | 2007-06-21 | 液晶表示装置 |
US12/153,508 US7924355B2 (en) | 2007-06-21 | 2008-05-20 | Liquid crystal display device |
CN2008101081960A CN101329485B (zh) | 2007-06-21 | 2008-05-30 | 液晶显示装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007164240A JP5305190B2 (ja) | 2007-06-21 | 2007-06-21 | 液晶表示装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009003187A true JP2009003187A (ja) | 2009-01-08 |
JP5305190B2 JP5305190B2 (ja) | 2013-10-02 |
Family
ID=40136092
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007164240A Active JP5305190B2 (ja) | 2007-06-21 | 2007-06-21 | 液晶表示装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7924355B2 (ja) |
JP (1) | JP5305190B2 (ja) |
CN (1) | CN101329485B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013178523A (ja) * | 2013-03-25 | 2013-09-09 | Japan Display Inc | 液晶表示装置 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102629037B (zh) * | 2011-10-28 | 2015-01-07 | 京东方科技集团股份有限公司 | 阵列基板、液晶面板及其制造方法 |
WO2014084130A1 (ja) * | 2012-11-30 | 2014-06-05 | シャープ株式会社 | Tft基板 |
US9703158B2 (en) * | 2015-04-13 | 2017-07-11 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Liquid crystal display panel and liquid crystal display apparatus having the same |
CN104777638B (zh) * | 2015-04-13 | 2018-04-20 | 深圳市华星光电技术有限公司 | 液晶显示面板及液晶显示装置 |
US10330991B1 (en) | 2018-05-31 | 2019-06-25 | a.u. Vista Inc. | Liquid crystal display devices with electrode stacks and methods for manufacturing such devices |
US11201175B2 (en) * | 2018-11-21 | 2021-12-14 | Sharp Kabushiki Kaisha | Array substrate with capacitance forming portion to hold potential at electrode |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH0244317A (ja) * | 1988-08-05 | 1990-02-14 | Hitachi Ltd | 補助容量を有する液晶表示装置 |
JPH0843854A (ja) * | 1994-07-27 | 1996-02-16 | Sony Corp | 液晶表示装置 |
JP2000155337A (ja) * | 1998-11-24 | 2000-06-06 | Hitachi Ltd | 液晶表示装置 |
JP2001142092A (ja) * | 1999-11-10 | 2001-05-25 | Hitachi Ltd | 液晶表示装置とその製造方法 |
JP2003295210A (ja) * | 2002-04-03 | 2003-10-15 | Hitachi Ltd | 液晶表示装置 |
Family Cites Families (15)
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JP3640224B2 (ja) * | 1996-06-25 | 2005-04-20 | 株式会社半導体エネルギー研究所 | 液晶表示パネル |
JPH10240162A (ja) * | 1997-02-28 | 1998-09-11 | Sony Corp | アクティブマトリクス表示装置 |
US6369410B1 (en) * | 1997-12-15 | 2002-04-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the semiconductor device |
KR100325079B1 (ko) * | 1999-12-22 | 2002-03-02 | 주식회사 현대 디스플레이 테크놀로지 | 고개구율 및 고투과율 액정표시장치의 제조방법 |
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-
2007
- 2007-06-21 JP JP2007164240A patent/JP5305190B2/ja active Active
-
2008
- 2008-05-20 US US12/153,508 patent/US7924355B2/en active Active
- 2008-05-30 CN CN2008101081960A patent/CN101329485B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0244317A (ja) * | 1988-08-05 | 1990-02-14 | Hitachi Ltd | 補助容量を有する液晶表示装置 |
JPH0843854A (ja) * | 1994-07-27 | 1996-02-16 | Sony Corp | 液晶表示装置 |
JP2000155337A (ja) * | 1998-11-24 | 2000-06-06 | Hitachi Ltd | 液晶表示装置 |
JP2001142092A (ja) * | 1999-11-10 | 2001-05-25 | Hitachi Ltd | 液晶表示装置とその製造方法 |
JP2003295210A (ja) * | 2002-04-03 | 2003-10-15 | Hitachi Ltd | 液晶表示装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013178523A (ja) * | 2013-03-25 | 2013-09-09 | Japan Display Inc | 液晶表示装置 |
Also Published As
Publication number | Publication date |
---|---|
CN101329485A (zh) | 2008-12-24 |
US20080316385A1 (en) | 2008-12-25 |
US7924355B2 (en) | 2011-04-12 |
CN101329485B (zh) | 2011-04-06 |
JP5305190B2 (ja) | 2013-10-02 |
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