JP2008529271A - 電流閉じ込め構造および粗面処理を有するled - Google Patents
電流閉じ込め構造および粗面処理を有するled Download PDFInfo
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
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Abstract
Description
Claims (35)
- 関連したpコンタクトを有するp型材料層と、
関連したnコンタクトを有するn型材料層と、
前記p型層と前記n型層との間の活性領域と、
前記p型材料層および前記n型材料層のうちの少なくとも1つの中に形成された閉じ込め構造であって、前記閉じ込め構造の面積と一致する前記活性領域の面積からの光の放射を実質的に妨げる閉じ込め構造と、
前記p型材料層および前記n型材料層のうちの1つと関連した粗面と
を備えることを特徴とする発光ダイオード(LED)。 - 前記閉じ込め構造は、前記p型材料層および前記n型材料層のうちの少なくとも1つのイオン注入領域を備えることを特徴とする請求項1に記載のLED。
- 前記閉じ込め構造は、前記p型材料層および前記n型材料層のうちの少なくとも1つの酸化領域を備えることを特徴とする請求項1に記載のLED。
- 前記閉じ込め構造は、前記p型材料層および前記n型材料層のうちの少なくとも1つの中の電流阻止領域を備えることを特徴とする請求項1に記載のLED。
- 前記p型材料層は、前記活性領域と隣接接触し、前記電流閉じ込め構造は、前記p型材料層の中にあることを特徴とする請求項1に記載のLED。
- 前記n型材料層は、前記活性領域と隣接接触し、前記電流閉じ込め構造は、前記n型材料層の中にあることを特徴とする請求項1に記載のLED。
- 前記n型材料層に隣接して電導性基板をさらに備え、前記nコンタクトは、前記基板と隣接接触していることを特徴とする請求項1に記載のLED。
- 関連した第1のコンタクトおよび光が放射される第1の表面を有する第1の材料層と、
関連した第2のコンタクトを有する第2の材料層と、
前記第1の層と前記第2の層との間の活性領域と、
前記第1の層および前記第2の層のうちの1つと一体化され、前記第1のコンタクトとほぼ軸方向に一列に並んでいる閉じ込め構造であって、前記閉じ込め構造の面積と一致する前記活性領域の面積における光の放射を実質的に妨げる閉じ込め構造と
を備えることを特徴とする発光ダイオード(LED)。 - 前記閉じ込め構造は、前記第1の層および第2の層のうちの1つの一部を備え、前記一部は、イオン注入されていることを特徴とする請求項8に記載のLED。
- 前記閉じ込め構造は、前記第1の層および第2の層のうちの1つの一部を備え、前記一部は、酸化されていることを特徴とする請求項8に記載のLED。
- 前記閉じ込め構造は、前記第1の層および第2の層のうちの1つの一部を備え、前記一部は、イオン注入されていることを特徴とする請求項8に記載のLED。
- 前記閉じ込め構造は、第1の層および第2の層のうちの1つの一部を備え、前記一部は、半絶縁性材料を注入されていることを特徴とする請求項8に記載のLED。
- 前記第1の層および第2の層の材料はGaNを含み、前記半絶縁性材料は、AlおよびGaのうちの1つを含むことを特徴とする請求項12に記載のLED。
- 前記第1の表面は、少なくとも部分的に粗面処理されていることを特徴とする請求項8に記載のLED。
- 前記第1の表面に隣接して、少なくとも部分的に粗面処理された透明電導性材料の層をさらに備えることを特徴とする請求項8に記載のLED。
- 前記透明材料は、ZnO、In2O3および酸化インジウム錫(ITO)のうちの1つを含むことを特徴とする請求項15に記載のLED。
- 前記第2のコンタクトは、反射性材料から形成されていることを特徴とする請求項8に記載のLED。
- 前記閉じ込め構造の前記面積は、前記第1のコンタクトの面積と実質的に同じであることを特徴とする請求項8に記載のLED。
- 関連した第1のコンタクトおよび光が放射される第1の表面を有する第1の材料層と、
第2の材料層と、
前記第1の層と前記第2の層との間の活性領域と、
前記第2の材料層に隣接し、関連した基板コンタクトを有する電導性基板と、
前記第1の層、前記第2の層および前記基板のうちの1つの中にあり、前記第1のコンタクトとほぼ軸方向に一列に並んだ少なくとも1つの閉じ込め構造であって、前記活性領域の方に向かって流れる電流を、前記閉じ込め構造の面積と一致する前記活性領域の面積から遠ざけるように方向付ける閉じ込め構造と
を備えることを特徴とする発光ダイオード(LED)。 - 前記第1の材料層はp型材料を含み、前記第2の材料層はn型材料を含み、前記少なくとも1つの電流閉じ込め構造は前記p型材料の中にあることを特徴とする請求項19に記載のLED。
- 前記第1の材料層はp型材料を含み、前記第2の材料層はn型材料を含み、前記少なくとも1つの電流閉じ込め構造は前記n型材料の中にあることを特徴とする請求項19に記載のLED。
- 前記第1の材料層はp型材料を含み、前記第2の材料層はn型材料を含み、前記少なくとも1つの電流閉じ込め構造は前記基板の中にあることを特徴とする請求項19に記載のLED。
- 前記第1の材料層はn型材料を含み、前記第2の材料層はp型材料を含み、前記少なくとも1つの電流閉じ込め構造は前記n型材料の中にあることを特徴とする請求項19に記載のLED。
- 前記第1の材料層はn型材料を含み、前記第2の材料層はp型材料を含み、前記少なくとも1つの電流閉じ込め構造は前記p型材料の中にあることを特徴とする請求項19に記載のLED。
- 前記第1の材料層はn型材料を含み、前記第2の材料層はp型材料を含み、前記少なくとも1つの電流閉じ込め構造は前記基板の中にあることを特徴とする請求項19に記載のLED。
- 前記第1の表面の少なくとも一部が粗面処理されていることを特徴とする請求項19に記載のLED。
- 前記第1の表面に隣接して、少なくとも部分的に粗面処理された透明電導性材料の層をさらに備えることを特徴とする請求項19に記載のLED。
- 関連した第1のコンタクトおよび光が放射される第1の表面を有する第1の材料層と、
関連した第2のコンタクトを有する第2の材料層と、
前記第1の層と前記第2の層との間の活性領域と、
前記第2のコンタクトと関連した閉じ込め構造であって、前記活性領域の方に向かって流れる電流を、前記閉じ込め構造の面積と一致する前記活性領域の面積から遠ざけるように方向付ける閉じ込め構造と
を備えることを特徴とする発光ダイオード(LED)。 - 前記閉じ込め構造は、絶縁性非電導性材料を備えることを特徴とする請求項28に記載のLED。
- 前記絶縁性非電導性材料は、SiO2、AlNおよびSiNのうちの1つを含むことを特徴とする請求項29に記載のLED。
- 前記閉じ込め構造は、前記第1のコンタクトとほぼ軸方向に一列に並んでいることを特徴とする請求項28に記載のLED。
- 前記第2のコンタクトは、反射性材料から形成されていることを特徴とする請求項28に記載のLED。
- 前記第1の表面の少なくとも一部が粗面処理されていることを特徴とする請求項28に記載のLED。
- 前記第1の表面に隣接して、少なくとも部分的に粗面処理された透明電導性材料の層をさらに備えることを特徴とする請求項28に記載のLED。
- 前記透明材料は、ZnO、In2O3および酸化インジウム錫(ITO)のうちの1つを含むことを特徴とする請求項34に記載のLED。
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US11/042,030 US7335920B2 (en) | 2005-01-24 | 2005-01-24 | LED with current confinement structure and surface roughening |
PCT/US2005/036552 WO2006080958A1 (en) | 2005-01-24 | 2005-09-15 | Led with curent confinement structure and surface roughening |
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JP2011117143A Division JP5887068B2 (ja) | 2005-01-24 | 2011-05-25 | 電流閉じ込め構造および粗面処理を有するled |
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EP (2) | EP2267803B1 (ja) |
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CN (1) | CN101107720A (ja) |
AT (1) | ATE524838T1 (ja) |
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Cited By (4)
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KR20120018637A (ko) * | 2010-08-23 | 2012-03-05 | 엘지이노텍 주식회사 | 발광 소자 |
JP2014049759A (ja) * | 2012-08-31 | 2014-03-17 | Advanced Optoelectronic Technology Inc | 発光ダイオードチップの製造方法 |
JP2015524167A (ja) * | 2012-06-01 | 2015-08-20 | コーニンクレッカ フィリップス エヌ ヴェ | Led表面の粗面仕上げにおける特徴サイズ及び形状制御を用いる光抽出の改良 |
KR101936267B1 (ko) * | 2012-06-08 | 2019-01-08 | 엘지이노텍 주식회사 | 발광소자, 발광소자 패키지 및 라이트 유닛 |
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CN101335320B (zh) | 2003-09-19 | 2012-06-06 | 霆激科技股份有限公司 | 用于制作发光器件的方法 |
KR20070013273A (ko) * | 2004-03-15 | 2007-01-30 | 팅기 테크놀러지스 프라이빗 리미티드 | 반도체 장치의 제조 |
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EP2267803B1 (en) | 2020-11-04 |
EP1849193A1 (en) | 2007-10-31 |
CN101107720A (zh) | 2008-01-16 |
US20060163586A1 (en) | 2006-07-27 |
US7335920B2 (en) | 2008-02-26 |
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