JP2008270816A - 均一な無電解メッキ厚さを得ることができる半導体素子の製造方法 - Google Patents
均一な無電解メッキ厚さを得ることができる半導体素子の製造方法 Download PDFInfo
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- JP2008270816A JP2008270816A JP2008110530A JP2008110530A JP2008270816A JP 2008270816 A JP2008270816 A JP 2008270816A JP 2008110530 A JP2008110530 A JP 2008110530A JP 2008110530 A JP2008110530 A JP 2008110530A JP 2008270816 A JP2008270816 A JP 2008270816A
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- Prior art keywords
- layer
- manufacturing
- electroless plating
- copper
- seed
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 70
- 238000007772 electroless plating Methods 0.000 title claims abstract description 52
- 239000000758 substrate Substances 0.000 claims abstract description 71
- 238000000034 method Methods 0.000 claims abstract description 64
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- 239000010949 copper Substances 0.000 claims description 107
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 101
- 229910052802 copper Inorganic materials 0.000 claims description 100
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 51
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- 238000009792 diffusion process Methods 0.000 claims description 28
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 28
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 27
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 23
- 229910052759 nickel Inorganic materials 0.000 claims description 23
- 229920002120 photoresistant polymer Polymers 0.000 claims description 15
- 230000002265 prevention Effects 0.000 claims description 14
- 238000009713 electroplating Methods 0.000 claims description 12
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 11
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- 238000004381 surface treatment Methods 0.000 claims description 11
- 229910001128 Sn alloy Inorganic materials 0.000 claims description 9
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 9
- 229910052738 indium Inorganic materials 0.000 claims description 9
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 238000009832 plasma treatment Methods 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- 238000002161 passivation Methods 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 239000002356 single layer Substances 0.000 claims description 4
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- 229910021645 metal ion Inorganic materials 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
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- 239000002994 raw material Substances 0.000 description 2
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
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- 230000006872 improvement Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
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- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- JRKICGRDRMAZLK-UHFFFAOYSA-L peroxydisulfate Chemical compound [O-]S(=O)(=O)OOS([O-])(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 description 1
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Abstract
【解決手段】ボンディングパッド106が外部に露出された半導体基板102を準備する工程と、前記半導体基板102上に多層膜で形成された種層を形成する工程と、前記種層上に所定のパターンを持つ金属配線をメッキ方式で形成する工程と、前記多層膜で形成された種層の前記メッキにおいて使われた最上層の膜の前記金属配線以外の部分のみを除去し、すべての前記金属配線を前記種層により接続させる工程と、前記金属配線上に無電解メッキで表面導電層を形成する工程と、前記半導体基板102上に残留する種層を除去する工程とを有することを特徴とする。
【選択図】図20
Description
図1〜図8を参照すると、まず、半導体基板10上に集積回路部(図示せず)が形成され、窒化膜(SiN)材質の最終保護膜12よりボンディングパッド14が外部に露出された構造の半導体基板10を備える。次いで、半導体基板10上に種層32をスパッタリング方式で形成する。種層32は、下部はチタン層16であり、上部は銅層18であることが適している。
図9及び図10を参照すると、一般的に半導体基板上に形成されたバンプ22は、一般的な信号端子の役割を行うバンプ22Aと、接地機能を行うバンプ22Bとがある。かかる半導体基板10に対して無電解メッキを実施すると、一般的な信号端子の役割を行うバンプ22Aは、半導体素子の構造上、半導体基板10の内部に形成されたウェル(P−well)28により絶縁されるため、内部での電子の供給が円滑でない。これにより、一般的な信号端子の役割を行う銅バンプ22Aの表面に貼着される金属イオン(Pd,Au)の動きは活発でなくて制限的になるしかない。
前記拡散防止層の材質は、Ti、TiN、TiW、Cr、Alの内から選択される一つであること。
前記種層は、3層構造であること。
前記3層構造の種層は、下部のチタン(Ti)層、中間の窒化チタン(TiN)層、及び上部の銅(Cu)層が順次に積層された構造であること。
前記所定のパターンを持つ金属配線は、銅(Cu)バンプ、銅を含む金属バンプ、ニッケルバンプの内から選択される一つであること。
前記所定のパターンを持つ金属配線は、前記ボンディングパッドの再配置パターンであること。
前記表面導電層は、ニッケル(Ni)層を有した多層構造であること。
前記表面導電層は、パラジウム(Pd)層を有した多層構造であること。
前記表面導電層は、スズ(Sn)層、スズ合金層、インジウム(In)層の内から選択される一つを有すること。
前記表面導電層は、パラジウム層、ニッケル層、ゴールド層が順次に積層された構造であること。
前記表面導電層を形成する工程は、前記表面導電層と前記半導体基板の上部の種層とが接する領域に、種層の下部拡散防止層が残留するように表面導電層を形成すること。
前記上部種層を除去した工程後に、前記下部拡散防止層に対する表面処理工程をさらに実施すること。
前記表面処理工程は、酸素プラズマ処理であること。
前記種層上にメッキ方式で金属配線を形成する工程後に、前記金属配線の上部を平坦化させる工程をさらに実施すること。
前記表面導電層を形成された前記半導体基板上に残留する種層を除去する工程後に、前記半導体基板に対する熱処理工程をさらに実施すること。
図11を参照すると、一般的にバンプ116は、大部分の半導体素子上に外部接続端子として形成できるが、半導体基板102上にバンプ116が主に形成される半導体素子はDDIC半導体素子100などがある。
図12〜図19を参照すると、半導体基板102上に集積回路部(図示せず)が形成され、最終保護膜104よりボンディングパッド106が外部に露出した構造のDDIC半導体素子100を準備する。集積回路部は、メモリ、ロジック、ASIC及びマイクロコントローラなど多様な機能の集積回路部が含まれうる。また、ボンディングパッドはその材質がアルミニウムであるか、又は銅材質でありうる。
拡散防止層108は、チタン(Ti)を使用して3000Åの厚さで形成するのが好ましい。電解メッキ時に銅バンプの成長のための種金属の役割を行う銅層110は、銅を使用して2000Åの厚さで形成するのが好ましい。種層112は、スパッタリングの代りに他の方式を通じて形成するように多様に変形でき、半導体基板102上を覆える厚さがあるように形成すればよい。この時、拡散防止層108はチタン(Ti)の代りに拡散防止の機能があり、接着力の高いTiN、TiW、Cr、Alなどの他の材質に代替してもよい。
従来技術による一般的な無電解メッキ方式では、種層112の銅層110及び下部の拡散防止層108までいずれも除去したが、本発明では上部の銅層110のみを除去するため、すべての銅バンプ116が種層112の下部拡散防止層、例えば、チタン層108を通じて電気的にいずれも接続された状態に残っている。
図20を参照すると、たとえ一般的な信号端子機能を行う銅バンプ116Aが半導体基板の内部に形成されたウェル(P−well)124により絶縁されたとしても、本発明の特徴のうち一つである半導体基板上に残留する種層112の拡散防止層108により、一般的な信号端子の機能を行う銅バンプ116Aは、接地機能を行う銅バンプ116Bと電気的に互いに接続された状態にある。
図21を参照すると、銅バンプ116上に形成される表面導電層122を、図19ではニッケルと金からなる2層構造で形成したが、これは多様な形態で変形できる。例えば、表面導電層はゴールド層でなる単層あるいは多層構造であり得、またニッケル層を備える多層構造であ得、またパラジウム層を備える多層構造であり得、スズ層、スズ合金層及びインジウム層の内から選択された一つを含む単層あるいは多層構造であり得る。
また、本実施形態は種層112上に形成される金属配線が銅バンプ116であることを一例として説明したが、銅バンプは、ニッケルバンプあるいはニッケルと銅との合金からなるバンプに変更しても適用でき得る。
図22は、半導体素子でボンディングパッドの再配線用パターンの構造を説明するための平面図である。
図23を参照すると、再配線されたボンディングパッド212を作るために、先ずパッシベーション層(最終保護膜)204よりボンディングパッドが露出された半導体基板202に第1絶縁膜208が形成される。
図24〜図31を参照すると、まずパッシベーション層204よりボンディングパッド(図示せず)が露出された半導体基板202上に第1絶縁膜208を形成する。次に、第1絶縁膜208上に、例えば、下部のチタン層216及び上部の銅層218をそれぞれ形成して2層構造の種層220を形成する。
101 基板
102、202 半導体基板
103 異方性導電接着フィルム
104、204 最終保護膜(パッシベーション層)
106、206 ボンディングパッド
108、216 拡散防止層(チタン層)
110、218 銅層
112、220 種層
114、222 フォトレジストパターン
116、116A、116B 銅バンプ
118 ニッケル層(拡散防止層)
120 ゴールド層
120A、120B (第1、第2)ゴールド層
122、226 表面導電層
124 ウェル
126 パラジウム層
200 半導体チップ
206 ボンディングパッド
208 第1絶縁膜
210、214 再配線用銅パターン(再配置パターン)
212 (再配線された)ボンディングパッド
ソルダボール
224
228 第2絶縁膜
Claims (30)
- ボンディングパッドが外部に露出された半導体基板を準備する工程と、
前記半導体基板上に多層膜で形成された種層を形成する工程と、
前記種層上に所定のパターンを持つ金属配線をメッキ方式で形成する工程と、
前記多層膜で形成された種層の前記メッキにおいて使われた最上層の膜の前記金属配線以外の部分のみを除去し、すべての前記金属配線を前記種層により接続させる工程と、
前記金属配線上に無電解メッキで表面導電層を形成する工程と、
前記半導体基板上に残留する種層を除去する工程とを有することを特徴とする均一な無電解メッキ厚さを得ることができる半導体素子の製造方法。 - 前記種層は、下部拡散防止層と上部種層との2層構造であることを特徴とする請求項1に記載の均一な無電解メッキ厚さを得ることができる半導体素子の製造方法。
- 前記拡散防止層の材質は、Ti、TiN、TiW、Cr、Alの内から選択される一つであることを特徴とする請求項2に記載の均一な無電解メッキ厚さを得ることができる半導体素子の製造方法。
- 前記種層は、3層構造であることを特徴とする請求項1に記載の均一な無電解メッキ厚さを得ることができる半導体素子の製造方法。
- 前記3層構造の種層は、下部のチタン(Ti)層、中間の窒化チタン(TiN)層、及び上部の銅(Cu)層が順次に積層された構造であることを特徴とする請求項4に記載の均一な無電解メッキ厚さを得ることができる半導体素子の製造方法。
- 前記所定のパターンを持つ金属配線は、銅(Cu)バンプ、銅を含む金属バンプ、ニッケルバンプの内から選択される一つであることを特徴とする請求項1に記載の均一な無電解メッキ厚さを得ることができる半導体素子の製造方法。
- 前記所定のパターンを持つ金属配線は、前記ボンディングパッドの再配置パターンであることを特徴とする請求項1に記載の均一な無電解メッキ厚さを得ることができる半導体素子の製造方法。
- 前記表面導電層は、ゴールド(Au)層を有することを特徴とする請求項1に記載の均一な無電解メッキ厚さを得ることができる半導体素子の製造方法。
- 前記表面導電層は、ニッケル(Ni)層を有した多層構造であることを特徴とする請求項1に記載の均一な無電解メッキ厚さを得ることができる半導体素子の製造方法。
- 前記表面導電層は、パラジウム(Pd)層を有した多層構造であることを特徴とする請求項1に記載の均一な無電解メッキ厚さを得ることができる半導体素子の製造方法。
- 前記表面導電層は、スズ(Sn)層、スズ合金層、インジウム(In)層の内から選択される一つを有することを特徴とする請求項1に記載の均一な無電解メッキ厚さを得ることができる半導体素子の製造方法。
- 前記表面導電層は、パラジウム層、ニッケル層、ゴールド層が順次に積層された構造であることを特徴とする均一な無電解メッキ厚さを得ることができる請求項1に記載の半導体素子の製造方法。
- 前記表面導電層を形成する工程は、前記3層構造の種層のうち、中間に形成された層を除去する工程をさらに含むことを特徴とする請求項4に記載の均一な無電解メッキ厚さを得ることができる半導体素子の製造方法。
- 前記表面導電層を形成する工程は、前記表面導電層と前記半導体基板の上部の種層とが接する領域に、種層の下部拡散防止層が残留するように表面導電層を形成することを特徴とする請求項2に記載の均一な無電解メッキ厚さを得ることができる半導体素子の製造方法。
- 前記上部種層を除去した工程後に、前記下部拡散防止層に対する表面処理工程をさらに実施することを特徴とする請求項2に記載の均一な無電解メッキ厚さを得ることができる半導体素子の製造方法。
- 前記表面処理工程は、酸素プラズマ処理であることを特徴とする請求項15に記載の均一な無電解メッキ厚さを得ることができる半導体素子の製造方法。
- 前記種層上にメッキ方式で金属配線を形成する工程後に、前記金属配線の上部を平坦化させる工程をさらに実施することを特徴とする請求項6に記載の均一な無電解メッキ厚さを得ることができる半導体素子の製造方法。
- 前記表面導電層を形成された前記半導体基板上に残留する種層を除去する工程後に、前記半導体基板に対する熱処理工程をさらに実施することを特徴とする請求項1に記載の均一な無電解メッキ厚さを得ることができる半導体素子の製造方法。
- ボンディングパッドが形成された半導体基板の全面にチタン層及び銅層の2層構造でなる種層を形成する工程と、
前記ボンディングパッドが露出するように前記半導体基板上にフォトレジストパターンを形成する工程と、
前記ボンディングパッド上にメッキ方式で銅バンプを形成し、前記フォトレジストパターンを除去する工程と、
前記種層の上部の前記銅層を除去し、すべての銅バンプを種層のチタン層を通じて接続させる工程と、
前記銅バンプに無電解メッキにて表面導電層を形成する工程と、
前記表面導電層が形成された半導体基板に残留する種層のチタン層を除去する工程とを有することを特徴とする均一な無電解メッキ厚さを得ることができる半導体素子の製造方法。 - 前記表面導電層は、ゴールド(Au)層、スズ(Sn)層、インジウム(In)層、及びスズ合金層の内から選択される一つであることを特徴とする請求項19に記載の均一な無電解メッキ厚さを得ることができる半導体素子の製造方法。
- 前記表面導電層は、ゴールド層、ニッケル(Ni)層、パラジウム(Pd)層、スズ層、スズ合金層、及びインジウム層の内から選択される一つを含む多層構造であることを特徴とする請求項19に記載の均一な無電解メッキ厚さを得ることができる半導体素子の製造方法。
- 前記種層の上部の銅層を除去する工程後に、前記種層のチタン層に対する表面処理工程をさらに実施することを特徴とする請求項19に記載の均一な無電解メッキ厚さを得ることができる半導体素子の製造方法。
- 前記表面処理工程は、酸素プラズマ処理であることを特徴とする請求項22に記載の均一な無電解メッキ厚さを得ることができる半導体素子の製造方法。
- 前記メッキ方式で銅バンプを形成する工程後に、前記銅バンプの上部を平坦化させる工程をさらに実施することを特徴とする請求項19に記載の均一な無電解メッキ厚さを得ることができる半導体素子の製造方法。
- 前記表面導電層を形成された前記半導体基板上に残留する種層のチタン層を除去する工程後に、前記半導体基板に対する熱処理工程をさらに実施することを特徴とする請求項19に記載の均一な無電解メッキ厚さを得ることができる半導体素子の製造方法。
- パッシベーション層よりボンディングパッドが露出された半導体基板を準備する工程と、
前記半導体基板上に前記ボンディングパッドの再配置のために、前記ボンディングパッドを露出させた第1絶縁膜を形成する工程と、
前記半導体基板の全面にチタン層と銅層との2層構造でなる種層を形成する工程と、
前記半導体基板上にメッキ方式でボンディングパッドの再配線用銅パターンを形成する工程と、
前記種層の上部層の銅層を除去し、ボンディングパッドの再配線用銅パターンを前記種層を通じて接続させる工程と、
前記ボンディングパッドの再配線用銅パターンに無電解メッキにて表面導電層を形成する工程と、
前記半導体基板の全面に残留する種層を除去する工程と、
前記表面導電層が形成されたボンディングパッドの再配線用銅パターンで位置移動が行われた再配線用ボンディングパッドを露出させた第2絶縁膜を形成する工程とを有することを特徴とする均一な無電解メッキ厚さを得ることができる半導体素子の製造方法。 - 前記表面導電層は、ニッケル(Ni)層、ゴールド(Au)層、スズ(Sn)層、インジウム(In)層、及びスズ合金層の内から選択される一つからなる単層構造であることを特徴とする請求項26に記載の均一な無電解メッキ厚さを得ることができる半導体素子の製造方法。
- 前記表面導電層は、ニッケル層、ゴールド層、スズ層、インジウム層、及びスズ合金層の内から選択される一つを含む多層構造であることを特徴とする請求項26に記載の均一な無電解メッキ厚さを得ることができる半導体素子の製造方法。
- 前記種層の上部層の銅層を除去した工程後に、前記種層のチタン層に対する表面処理工程をさらに実施することを特徴とする請求項26に記載の均一な無電解メッキ厚さを得ることができる半導体素子の製造方法。
- 前記表面処理工程は酸素プラズマ処理であることを特徴とする請求項29に記載の均一な無電解メッキ厚さを得ることができる半導体素子の製造方法。
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JP2004172423A (ja) * | 2002-11-21 | 2004-06-17 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
JP2006005322A (ja) * | 2004-05-18 | 2006-01-05 | Sony Corp | 部品実装配線基板および配線基板への部品の実装方法 |
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JP2012054519A (ja) * | 2010-09-02 | 2012-03-15 | Samsung Electro-Mechanics Co Ltd | 半導体パッケージ基板およびその製造方法 |
JP2015216344A (ja) * | 2014-04-21 | 2015-12-03 | 新光電気工業株式会社 | 配線基板及びその製造方法 |
JP2018130746A (ja) * | 2017-02-16 | 2018-08-23 | 日立化成株式会社 | 金属接合部、接合体及びその製造方法、接合方法、半導体装置並びに半導体素子 |
CN112242306A (zh) * | 2019-07-16 | 2021-01-19 | 株式会社东芝 | 半导体装置的制造方法及金属的层叠方法 |
JP2021015943A (ja) * | 2019-07-16 | 2021-02-12 | 株式会社東芝 | 半導体装置の製造方法および金属の積層方法 |
JP7189846B2 (ja) | 2019-07-16 | 2022-12-14 | 株式会社東芝 | 半導体装置の製造方法および金属の積層方法 |
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US7786581B2 (en) | 2010-08-31 |
CN101325167A (zh) | 2008-12-17 |
KR100850212B1 (ko) | 2008-08-04 |
CN101325167B (zh) | 2011-06-08 |
US20080258299A1 (en) | 2008-10-23 |
JP5525140B2 (ja) | 2014-06-18 |
US20100320500A1 (en) | 2010-12-23 |
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