JP2008156225A - シリコン半導体ウェハを製造する方法及び装置 - Google Patents
シリコン半導体ウェハを製造する方法及び装置 Download PDFInfo
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- JP2008156225A JP2008156225A JP2007328958A JP2007328958A JP2008156225A JP 2008156225 A JP2008156225 A JP 2008156225A JP 2007328958 A JP2007328958 A JP 2007328958A JP 2007328958 A JP2007328958 A JP 2007328958A JP 2008156225 A JP2008156225 A JP 2008156225A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 39
- 238000000034 method Methods 0.000 title claims abstract description 33
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 23
- 239000010703 silicon Substances 0.000 title claims abstract description 23
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 239000013078 crystal Substances 0.000 claims abstract description 129
- 239000000155 melt Substances 0.000 claims abstract description 65
- 230000007935 neutral effect Effects 0.000 claims abstract description 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 22
- 230000007547 defect Effects 0.000 claims description 76
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 22
- 239000001301 oxygen Substances 0.000 claims description 22
- 229910052760 oxygen Inorganic materials 0.000 claims description 22
- 238000001816 cooling Methods 0.000 claims description 10
- 230000006911 nucleation Effects 0.000 claims description 6
- 238000010899 nucleation Methods 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 5
- 238000010348 incorporation Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 abstract description 36
- 230000015572 biosynthetic process Effects 0.000 description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 230000005672 electromagnetic field Effects 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 125000004429 atom Chemical group 0.000 description 7
- 230000005684 electric field Effects 0.000 description 7
- 238000009826 distribution Methods 0.000 description 6
- 238000005259 measurement Methods 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 239000002244 precipitate Substances 0.000 description 3
- 230000032258 transport Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000011835 investigation Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000003723 Smelting Methods 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000005065 mining Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B30/00—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions
- C30B30/04—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions using magnetic fields
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1016—Apparatus with means for treating single-crystal [e.g., heat treating]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
【解決手段】ルツボ中に含まれる融液から単結晶を引き上げ、引き上げられた単結晶から半導体ウェハをスライシングするシリコン半導体ウェハの製造方法において、単結晶の引き上げの間に成長する単結晶の融液との界面の中心に熱を導入し、CUSP磁場の中立面が単結晶の引き上げ軸を、融液表面から少なくとも50mmの距離で横切るようにCUSP磁場を融液に印加する。
【選択図】なし
Description
Claims (16)
- ルツボ中に含まれる融液から単結晶を引き上げ、引き上げられた単結晶から半導体ウェハをスライシングするシリコン半導体ウェハの製造方法において、単結晶の引き上げの間に成長する単結晶の融液との界面の中心に熱を導入し、CUSP磁場の中立面が単結晶の引き上げ軸を、融液表面から少なくとも50mmの距離で横切るようにCUSP磁場を融液に印加する、シリコン半導体ウェハを製造する方法。
- CUSP磁場の中立面が、融液表面から50mm〜150mmの距離で単結晶の引き上げ軸を横切ることを特徴とする、請求項1記載の方法。
- 単結晶を、表面の少なくとも75%がAスワール欠陥も、30nmより大きな直径を有するCOP欠陥も生じないように比V/Gで引き上げて、その際、Vは引き上げ速度を示し、かつGは単結晶と融液との間の界面での軸方向温度勾配を示すことを特徴とする、請求項2記載の方法。
- 単結晶内への酸素の組み込みを、半導体ウェハにおいてOSF欠陥が検出できないように制御することを特徴とする、請求項1から3までのいずれか1項記載の方法。
- ルツボ底部の中心にある領域を、ルツボと共に可動する熱源により加熱することを特徴とする、請求項1から4までのいずれか1項記載の方法。
- ルツボ底部を固定配置された熱源で加熱することを特徴とする、請求項1から5までのいずれか1項記載の方法。
- 単結晶とルツボとを共回転させ、単結晶はルツボよりも速く回転させることを特徴とする、請求項1から6までのいずれか1項記載の方法。
- 熱を単結晶から、空孔集合体の核形成の温度範囲内で冷却により取り出すことを特徴とする、請求項1から7までのいずれか1項記載の方法。
- 融液表面に隣接する単結晶の縁部を加熱することを特徴とする、請求項1から8までのいずれか1項記載の方法。
- 半導体ウェハが300mmの直径を有し、単結晶を少なくとも0.35mm/minの速度で引き上げることを特徴とする、請求項1から9までのいずれか1項記載の方法。
- 融液表面の上方で少なくとも50mmの距離で単結晶の引き上げ軸を横切る中立面を有するCUSP磁場を発生させる電磁コイルを有する、ルツボ中に含まれる溶液から単結晶を引き上げる装置。
- ルツボ底部の中心にある領域を加熱する可動式熱源を有することを特徴とする、請求項11記載の装置。
- ルツボ底部を加熱する固定式熱源を有することを特徴とする、請求項11又は12記載の装置。
- 黒色にされた内面を備えた、単結晶を取り囲む熱交換器を有することを特徴とする、請求項11から13までのいずれか1項記載の装置。
- 融液表面から10〜50mmの距離を有する下方端部を備えた、単結晶を遮閉する熱シールドを有することを特徴とする、請求項11から14までのいずれか1項記載の装置。
- 融液表面に隣接する単結晶の縁部を加熱する環状熱源を有することを特徴とする、請求項11から15までのいずれか1項記載の装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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DE102006060359.1 | 2006-12-20 | ||
DE102006060359A DE102006060359B4 (de) | 2006-12-20 | 2006-12-20 | Verfahren und Vorrichtung zur Herstellung von Halbleiterscheiben aus Silicium |
Publications (2)
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JP2008156225A true JP2008156225A (ja) | 2008-07-10 |
JP4814207B2 JP4814207B2 (ja) | 2011-11-16 |
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JP2007328958A Expired - Fee Related JP4814207B2 (ja) | 2006-12-20 | 2007-12-20 | シリコン半導体ウェハを製造する方法及び装置 |
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Country | Link |
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US (1) | US8172941B2 (ja) |
JP (1) | JP4814207B2 (ja) |
KR (1) | KR100945757B1 (ja) |
CN (1) | CN101240444A (ja) |
DE (1) | DE102006060359B4 (ja) |
SG (1) | SG144051A1 (ja) |
TW (1) | TWI372192B (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2011148691A (ja) * | 2010-01-20 | 2011-08-04 | Siltronic Ag | 少なくとも450mmの直径を有するシリコンから成る半導体ウェハを製造するための方法、及び450mmの直径を有するシリコンから成る半導体ウェハ |
JP2011256103A (ja) * | 2010-06-09 | 2011-12-22 | Siltronic Ag | シリコンからなる半導体ウェハを製造するための方法 |
JP2019530632A (ja) * | 2016-10-10 | 2019-10-24 | ジルトロニック アクチエンゲゼルシャフトSiltronic AG | るつぼに含まれる融解物から半導体材料からなる単結晶を引き上げる方法 |
KR20220062052A (ko) * | 2019-09-13 | 2022-05-13 | 글로벌웨이퍼스 씨오., 엘티디. | 연속 쵸크랄스키 방법을 사용하여 질소 도핑된 단결정 실리콘 잉곳을 성장시키기 위한 방법들 및 이 방법에 의해 성장되는 단결정 실리콘 잉곳 |
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JP4710247B2 (ja) * | 2004-05-19 | 2011-06-29 | 株式会社Sumco | 単結晶製造装置及び方法 |
JP2006069841A (ja) * | 2004-09-02 | 2006-03-16 | Sumco Corp | 磁場印加式シリコン単結晶の引上げ方法 |
DE102009051010B4 (de) * | 2009-10-28 | 2012-02-23 | Siltronic Ag | Vorrichtung zur Herstellung eines Einkristalls aus Silizium durch Umschmelzen von Granulat |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08239291A (ja) * | 1995-02-02 | 1996-09-17 | Wacker Siltronic G Fuer Halbleitermaterialien Mbh | 単結晶製造装置 |
JPH10265294A (ja) * | 1997-03-21 | 1998-10-06 | Wacker Siltronic G Fuer Halbleitermaterialien Ag | 単結晶の引き上げ装置及び方法 |
JP2004292309A (ja) * | 2003-03-27 | 2004-10-21 | Siltronic Ag | シリコン単結晶を製造するための方法及び装置、シリコン単結晶及びこれから切り出された半導体ウェーハ |
JP2005330147A (ja) * | 2004-05-19 | 2005-12-02 | Sumco Corp | 単結晶製造装置及び方法並びにシリコン単結晶 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61222984A (ja) | 1985-03-28 | 1986-10-03 | Toshiba Corp | 単結晶の製造装置 |
JP3085146B2 (ja) * | 1995-05-31 | 2000-09-04 | 住友金属工業株式会社 | シリコン単結晶ウェーハおよびその製造方法 |
JP3228173B2 (ja) * | 1997-03-27 | 2001-11-12 | 住友金属工業株式会社 | 単結晶製造方法 |
JP2992988B2 (ja) * | 1997-11-06 | 1999-12-20 | 日本電気株式会社 | シリコン単結晶育成方法 |
JP2000239097A (ja) * | 1999-02-22 | 2000-09-05 | Sumitomo Metal Ind Ltd | 半導体用シリコン単結晶の引上げ方法 |
DE10102126A1 (de) * | 2001-01-18 | 2002-08-22 | Wacker Siltronic Halbleitermat | Verfahren und Vorrichtung zum Herstellen eines Einkristalls aus Silicium |
JP4236243B2 (ja) * | 2002-10-31 | 2009-03-11 | Sumco Techxiv株式会社 | シリコンウェーハの製造方法 |
DE10339792B4 (de) * | 2003-03-27 | 2014-02-27 | Siltronic Ag | Verfahren und Vorrichtung zur Herstellung eines Einkristalls aus Silicium |
US7223304B2 (en) * | 2004-12-30 | 2007-05-29 | Memc Electronic Materials, Inc. | Controlling melt-solid interface shape of a growing silicon crystal using a variable magnetic field |
US7819972B2 (en) * | 2005-06-20 | 2010-10-26 | Sumco Corporation | Method for growing silicon single crystal and method for manufacturing silicon wafer |
US8152921B2 (en) * | 2006-09-01 | 2012-04-10 | Okmetic Oyj | Crystal manufacturing |
DE102007005346B4 (de) * | 2007-02-02 | 2015-09-17 | Siltronic Ag | Halbleiterscheiben aus Silicium und Verfahren zu deren Herstellung |
-
2006
- 2006-12-20 DE DE102006060359A patent/DE102006060359B4/de not_active Expired - Fee Related
-
2007
- 2007-11-23 CN CNA2007101936606A patent/CN101240444A/zh active Pending
- 2007-11-30 KR KR1020070124005A patent/KR100945757B1/ko not_active IP Right Cessation
- 2007-12-07 TW TW096146837A patent/TWI372192B/zh not_active IP Right Cessation
- 2007-12-07 SG SG200718453-4A patent/SG144051A1/en unknown
- 2007-12-19 US US12/002,881 patent/US8172941B2/en not_active Expired - Fee Related
- 2007-12-20 JP JP2007328958A patent/JP4814207B2/ja not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08239291A (ja) * | 1995-02-02 | 1996-09-17 | Wacker Siltronic G Fuer Halbleitermaterialien Mbh | 単結晶製造装置 |
JPH10265294A (ja) * | 1997-03-21 | 1998-10-06 | Wacker Siltronic G Fuer Halbleitermaterialien Ag | 単結晶の引き上げ装置及び方法 |
JP2004292309A (ja) * | 2003-03-27 | 2004-10-21 | Siltronic Ag | シリコン単結晶を製造するための方法及び装置、シリコン単結晶及びこれから切り出された半導体ウェーハ |
JP2005330147A (ja) * | 2004-05-19 | 2005-12-02 | Sumco Corp | 単結晶製造装置及び方法並びにシリコン単結晶 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2011148691A (ja) * | 2010-01-20 | 2011-08-04 | Siltronic Ag | 少なくとも450mmの直径を有するシリコンから成る半導体ウェハを製造するための方法、及び450mmの直径を有するシリコンから成る半導体ウェハ |
JP2011256103A (ja) * | 2010-06-09 | 2011-12-22 | Siltronic Ag | シリコンからなる半導体ウェハを製造するための方法 |
US8628613B2 (en) | 2010-06-09 | 2014-01-14 | Siltronic Ag | Method for producing semiconductor wafers composed of silicon with reduced pinholes |
JP2019530632A (ja) * | 2016-10-10 | 2019-10-24 | ジルトロニック アクチエンゲゼルシャフトSiltronic AG | るつぼに含まれる融解物から半導体材料からなる単結晶を引き上げる方法 |
KR20220062052A (ko) * | 2019-09-13 | 2022-05-13 | 글로벌웨이퍼스 씨오., 엘티디. | 연속 쵸크랄스키 방법을 사용하여 질소 도핑된 단결정 실리콘 잉곳을 성장시키기 위한 방법들 및 이 방법에 의해 성장되는 단결정 실리콘 잉곳 |
KR102647797B1 (ko) * | 2019-09-13 | 2024-03-15 | 글로벌웨이퍼스 씨오., 엘티디. | 연속 쵸크랄스키 방법을 사용하여 질소 도핑된 단결정 실리콘 잉곳을 성장시키기 위한 방법들 및 이 방법에 의해 성장되는 단결정 실리콘 잉곳 |
Also Published As
Publication number | Publication date |
---|---|
US20080153261A1 (en) | 2008-06-26 |
DE102006060359A1 (de) | 2008-06-26 |
DE102006060359B4 (de) | 2013-09-05 |
SG144051A1 (en) | 2008-07-29 |
JP4814207B2 (ja) | 2011-11-16 |
KR20080058177A (ko) | 2008-06-25 |
KR100945757B1 (ko) | 2010-03-08 |
CN101240444A (zh) | 2008-08-13 |
TWI372192B (en) | 2012-09-11 |
TW200829733A (en) | 2008-07-16 |
US8172941B2 (en) | 2012-05-08 |
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