JP2007531317A - 発光変換要素を備える半導体発光デバイスおよびそのパッケージング方法 - Google Patents
発光変換要素を備える半導体発光デバイスおよびそのパッケージング方法 Download PDFInfo
- Publication number
- JP2007531317A JP2007531317A JP2007506264A JP2007506264A JP2007531317A JP 2007531317 A JP2007531317 A JP 2007531317A JP 2007506264 A JP2007506264 A JP 2007506264A JP 2007506264 A JP2007506264 A JP 2007506264A JP 2007531317 A JP2007531317 A JP 2007531317A
- Authority
- JP
- Japan
- Prior art keywords
- encapsulant
- conversion element
- light emitting
- amount
- cavity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 135
- 238000000034 method Methods 0.000 title claims abstract description 99
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 49
- 239000004065 semiconductor Substances 0.000 title claims abstract description 34
- 239000008393 encapsulating agent Substances 0.000 claims abstract description 248
- 239000000463 material Substances 0.000 claims abstract description 217
- 238000004020 luminiscence type Methods 0.000 claims abstract description 101
- 230000005499 meniscus Effects 0.000 claims description 66
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 43
- 230000008859 change Effects 0.000 claims description 26
- 230000005855 radiation Effects 0.000 claims description 15
- 230000002596 correlated effect Effects 0.000 claims description 12
- 230000007423 decrease Effects 0.000 claims description 9
- 238000012545 processing Methods 0.000 claims description 4
- 239000002991 molded plastic Substances 0.000 claims description 3
- 239000002159 nanocrystal Substances 0.000 claims description 3
- 238000001723 curing Methods 0.000 description 39
- 230000008569 process Effects 0.000 description 29
- 239000000758 substrate Substances 0.000 description 21
- 230000003287 optical effect Effects 0.000 description 20
- 239000007788 liquid Substances 0.000 description 14
- 238000009826 distribution Methods 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 10
- 238000009736 wetting Methods 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 8
- 239000000499 gel Substances 0.000 description 8
- 229920001296 polysiloxane Polymers 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 238000011049 filling Methods 0.000 description 7
- 230000032798 delamination Effects 0.000 description 6
- 238000010252 digital analysis Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 230000001276 controlling effect Effects 0.000 description 5
- 238000005538 encapsulation Methods 0.000 description 5
- 238000003780 insertion Methods 0.000 description 5
- 230000037431 insertion Effects 0.000 description 5
- 238000001228 spectrum Methods 0.000 description 5
- 101150038956 cup-4 gene Proteins 0.000 description 4
- 230000009977 dual effect Effects 0.000 description 4
- 230000006872 improvement Effects 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001125 extrusion Methods 0.000 description 2
- 239000000314 lubricant Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000005382 thermal cycling Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
Description
Claims (42)
- 半導体発光デバイスをパッケージングする方法であって、
第1の量の封入材料を、前記発光デバイスを備える空洞中に分配するステップと、
前記空洞中の前記第1の量の封入材料を処理して、選択された形状を有する硬化した上面を形成するステップと、
前記処理された第1の量の封入材料の前記上面の上に発光変換要素を設けるステップであって、前記発光変換要素は、波長変換材料を含み、さらに前記反射空洞の中心領域で前記空洞の側壁に近い領域よりも大きな厚さを有するステップと
を含むことを特徴とする方法。 - 前記発光変換要素の厚さは、前記発光変換要素が前記中心領域から前記側壁に向かって半径方向に外側に広がるにつれて連続的に減少することを特徴とする請求項1に記載の方法。
- 前記発光変換要素の厚さは、前記発光変換要素の最大厚さの10パーセントよりも多く変化することを特徴とする請求項1に記載の方法。
- 前記発光変換要素は、両凸、平凸または凹凸形状を有していることを特徴とする請求項1に記載の方法。
- 前記発光変換要素の上に第2の量の封入材料を分配し、レンズの所望の形状を実現する封入材料で構成された凸状メニスカスを前記空洞中に形成するステップと、
前記第2の量の封入材料を硬化させ、前記パッケージングされた発光デバイス用のレンズを前記封入材料で形成するステップと
をさらに含むことを特徴とする請求項1に記載の方法。 - 前記発光変換要素の上に第2の量の封入材料を分配するステップと、
前記空洞中に、前記分配された第2の量の封入材料の上にレンズを位置付けするステップと、
前記分配された第2の量の封入材料を硬化させ、前記レンズを前記空洞中に取り付けるステップと
をさらに含むことを特徴とする請求項1に記載の方法。 - 発光変換要素を設けるステップは、
前記第1の量の封入材料の上面に第2の量の封入材料を分配するステップであって、前記第2の量の封入材料は前記波長変換材料をその中に有しているステップと、
前記第2の量の封入材料を硬化させ、前記発光変換要素を画定するステップと
を含むことを特徴とする請求項1に記載の方法。 - 前記発光変換要素は両凸形状を有し、前記選択された形状は凹状であり、前記第2の量の封入材料を分配し、硬化させるステップは、前記第2の量の封入材料を分配し、硬化させ、前記第2の量の封入材料の凸状の上面を形成することを含むことを特徴とする請求項7に記載の方法。
- 前記発光変換要素は平凸形状を有し、前記選択された形状は凹状であり、前記第2の量の封入材料を分配し、硬化させるステップは、前記第2の量の封入材料を分配し、硬化させ、前記第2の量の封入材料の平面の上面を形成することを含むことを特徴とする請求項7に記載の方法。
- 前記発光変換要素は平凸形状を有し、前記選択された形状は平面であり、前記第2の量の封入材料を分配し、硬化させるステップは、前記第2の量の封入材料を分配し、硬化させ、前記第2の量の封入材料の凸状の上面を形成することを含むことを特徴とする請求項7に記載の方法。
- 前記発光変換要素は凹凸形状を有し、前記選択された形状は凸状であり、前記第2の量の封入材料を分配し、硬化させるステップは、前記第2の量の封入材料を分配し、硬化させ、前記第2の量の封入材料の凸状の上面を形成することを含むことを特徴とする請求項7に記載の方法。
- 前記発光変換要素は凹凸形状を有し、前記選択された形状は凹状であり、前記第2の量の封入材料を分配し、硬化させるステップは、前記第2の量の封入材料を分配し、硬化させ、前記第2の量の封入材料の凹状の上面を形成することを含むことを特徴とする請求項7に記載の方法。
- 前記波長変換材料は、蛍光体および/またはナノ結晶を含むことを特徴とする請求項1に記載の方法。
- 前記第1の量の封入材料を処理する前記ステップは、前記第1の量の封入材料を硬化させることを含むことを特徴とする請求項1に記載の方法。
- 前記第1の量の封入材料を処理するステップは、前記第1の量の封入材料を予備硬化させ、その上面に固まった皮膜を形成することを含み、前記方法は、前記発光変換要素を設けた後で前記第1の量の封入材料を硬化させることをさらに含むことを特徴とする請求項1に記載の方法。
- 前記波長変換材料は、蛍光体を含み、さらに前記第1の量の封入材料は蛍光体を実質的に含まないことを特徴とする請求項1に記載の方法。
- 前記波長変換材料は、蛍光体を含み、前記第1の量の封入材料は蛍光体を含み、前記第1の量の封入材料が前記発光変換要素よりも重量で低いパーセント値の蛍光体を有していることを特徴とする請求項1に記載の方法。
- 前記発光変換要素は、予備成形挿入物を含み、前記発光変換要素を前記上面に設けるステップは、前記予備成形挿入物を前記処理された第1の量の封入材料の上面に配置することを含むことを特徴とする請求項1に記載の方法。
- 前記予備成形挿入物は、成形プラスチック蛍光体充填片部分を含むことを特徴とする請求項18に記載の方法。
- 前記予備成形挿入物を前記上面に配置する前に、前記予備成形挿入物を試験することを特徴とする請求項18に記載の方法。
- パッケージングされた半導体発光デバイスであって、
空洞を画定する側壁部を有する本体と、
前記空洞中に位置付けされた発光デバイスと、
前記発光デバイスを備える前記空洞の中の、第1の量の硬化された封入材料と、
前記第1の量の封入材料の上面の上の発光変換要素であって、波長変換材料を含み、前記空洞の中心領域で前記空洞の側壁に近い領域よりも大きな厚さを有している発光変換要素と
を備えることを特徴とするデバイス。 - 前記発光変換要素の厚さは、前記発光変換要素が前記中心領域から前記側壁に向かって半径方向に外側に広がるにつれて、連続的に減少することを特徴とする請求項21に記載のデバイス。
- 前記発光変換要素の厚さは、前記発光変換要素の最大厚さの10パーセントよりも多く変化していることを特徴とする請求項21に記載のデバイス。
- 前記発光変換要素は、両凸、平凸または凹凸形状を有していることを特徴とする請求項21に記載のデバイス。
- 前記発光デバイスは、発光ダイオード(LED)を備えることを特徴とする請求項21に記載のデバイス。
- 前記デバイスは、放射角のうち180(中心軸から+/−90)度範囲にわたって、最大色温度より僅か30パーセント下の最小色温度を有していることを特徴とする請求項21に記載のデバイス。
- 前記デバイスは、放射角のうち180(中心軸から+/−90)度範囲にわたって、約1000K未満の全相関色温度(CCT)変化を有する主発光パターンを有していることを特徴とする請求項21に記載のデバイス。
- 前記デバイスは、放射角のうち180(中心軸から+/−90)度範囲にわたって、約500Kの全CCT変化を有する主発光パターンを有していることを特徴とする請求項21に記載のデバイス。
- 前記デバイスは、放射角のうち120(中心軸から+/−45)度範囲にわたって、約1000K未満の全相関色温度(CCT)変化を有する主発光パターンを有していることを特徴とする請求項21に記載のデバイス。
- 前記デバイスは、放射角のうち90(中心軸から+/−45)度範囲にわたって、約500K未満の全相関色温度(CCT)変化を有する主発光パターンを有していることを特徴とする請求項21に記載のデバイス。
- 前記本体は反射器を備え、前記空洞は反射空洞を備えていることを特徴とする請求項21に記載のデバイス。
- パッケージングされた半導体発光デバイスであって
空洞を画定する側壁部を有する本体と、
前記空洞中に位置付けされた発光デバイスと、
前記発光デバイスを備える前記空洞の中の、第1の量の硬化された封入材料と、
前記第1の量の封入材料の上面の上の発光変換要素であって、波長変換材料を含む発光変換要素と
を備え、
放射角のうち180(中心軸から+/−90)度範囲にわたって、2000K未満の相関色温度の変化を示すことを特徴とするパッケージングされた半導体発光デバイス。 - 前記発光変換要素は、前記空洞の中心領域で前記空洞の側壁に近い領域よりも大きな厚さを有していることを特徴とする請求項32に記載のデバイス。
- 前記発光変換要素の厚さは、前記発光変換要素の最大厚さの10パーセントよりも多く変化していることを特徴とする請求項33に記載のデバイス。
- 前記発光変換要素は、両凸、平凸または凹凸形状を有していることを特徴とする請求項32に記載のデバイス。
- 前記発光デバイスは、発光ダイオード(LED)を備えることを特徴とする請求項32に記載のデバイス。
- 前記デバイスは、放射角のうち180(中心軸から+/−90)度範囲にわたって、最大色温度より僅か30パーセント下の最小色温度を有していることを特徴とする請求項32に記載のデバイス。
- 前記デバイスは、放射角のうち180(中心軸から+/−90)度範囲にわたって、約1000K未満の全相関色温度(CCT)変化を有する主発光パターンを有していることを特徴とする請求項32に記載のデバイス。
- 前記デバイスは、放射角のうち180(中心軸から+/−90)度範囲にわたって、約500Kの全CCT変化を有する主発光パターンを有していることを特徴とする請求項32に記載のデバイス。
- 前記デバイスは、放射角のうち120(中心軸から+/−45)度範囲にわたって、約1000K未満の全相関色温度(CCT)変化を有する主発光パターンを有していることを特徴とする請求項32に記載のデバイス。
- 前記デバイスは、放射角のうち90(中心軸から+/−45)度範囲にわたって約500K未満の全相関色温度(CCT)変化を有する主発光パターンを有していることを特徴とする請求項32に記載のデバイス。
- 前記本体は反射器を備え、前記空洞は反射空洞を備えていることを特徴とする請求項32に記載のデバイス。
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US55831404P | 2004-03-31 | 2004-03-31 | |
US60/558,314 | 2004-03-31 | ||
US63770004P | 2004-12-21 | 2004-12-21 | |
US60/637,700 | 2004-12-21 | ||
US11/055,194 | 2005-02-10 | ||
US11/055,194 US7517728B2 (en) | 2004-03-31 | 2005-02-10 | Semiconductor light emitting devices including a luminescent conversion element |
PCT/US2005/009778 WO2005098976A2 (en) | 2004-03-31 | 2005-03-24 | Semiconductor light emitting devices including a luminescent conversion element and methods for packaging the same |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007531317A true JP2007531317A (ja) | 2007-11-01 |
JP5285271B2 JP5285271B2 (ja) | 2013-09-11 |
Family
ID=35054898
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007506264A Active JP5285271B2 (ja) | 2004-03-31 | 2005-03-24 | 発光変換要素を備える半導体発光デバイスおよびそのパッケージング方法 |
Country Status (6)
Country | Link |
---|---|
US (4) | US7517728B2 (ja) |
EP (1) | EP1730793B1 (ja) |
JP (1) | JP5285271B2 (ja) |
KR (1) | KR20060135848A (ja) |
TW (2) | TWI413272B (ja) |
WO (1) | WO2005098976A2 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011151998A1 (ja) * | 2010-05-31 | 2011-12-08 | パナソニック株式会社 | 発光装置及びその製造方法 |
JP2013058765A (ja) * | 2007-09-11 | 2013-03-28 | Avago Technologies Ecbu Ip (Singapore) Pte Ltd | 発光装置 |
JP2020004842A (ja) * | 2018-06-28 | 2020-01-09 | 日亜化学工業株式会社 | 発光装置及び発光装置の製造方法 |
Families Citing this family (160)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2270887B1 (en) | 2003-04-30 | 2020-01-22 | Cree, Inc. | High powered light emitter packages with compact optics |
US7005679B2 (en) | 2003-05-01 | 2006-02-28 | Cree, Inc. | Multiple component solid state white light |
US7915085B2 (en) | 2003-09-18 | 2011-03-29 | Cree, Inc. | Molded chip fabrication method |
US7517728B2 (en) * | 2004-03-31 | 2009-04-14 | Cree, Inc. | Semiconductor light emitting devices including a luminescent conversion element |
US7837348B2 (en) * | 2004-05-05 | 2010-11-23 | Rensselaer Polytechnic Institute | Lighting system using multiple colored light emitting sources and diffuser element |
US7791061B2 (en) * | 2004-05-18 | 2010-09-07 | Cree, Inc. | External extraction light emitting diode based upon crystallographic faceted surfaces |
US7456499B2 (en) | 2004-06-04 | 2008-11-25 | Cree, Inc. | Power light emitting die package with reflecting lens and the method of making the same |
US7534633B2 (en) | 2004-07-02 | 2009-05-19 | Cree, Inc. | LED with substrate modifications for enhanced light extraction and method of making same |
US9929326B2 (en) | 2004-10-29 | 2018-03-27 | Ledengin, Inc. | LED package having mushroom-shaped lens with volume diffuser |
US8134292B2 (en) * | 2004-10-29 | 2012-03-13 | Ledengin, Inc. | Light emitting device with a thermal insulating and refractive index matching material |
US8324641B2 (en) * | 2007-06-29 | 2012-12-04 | Ledengin, Inc. | Matrix material including an embedded dispersion of beads for a light-emitting device |
US8816369B2 (en) | 2004-10-29 | 2014-08-26 | Led Engin, Inc. | LED packages with mushroom shaped lenses and methods of manufacturing LED light-emitting devices |
US7939842B2 (en) | 2005-01-27 | 2011-05-10 | Cree, Inc. | Light emitting device packages, light emitting diode (LED) packages and related methods |
DE102005020908A1 (de) * | 2005-02-28 | 2006-08-31 | Osram Opto Semiconductors Gmbh | Beleuchtungsvorrichtung |
EP1861876A1 (en) * | 2005-03-24 | 2007-12-05 | Tir Systems Ltd. | Solid-state lighting device package |
EP1872401B1 (en) * | 2005-04-05 | 2018-09-19 | Philips Lighting Holding B.V. | Electronic device package with an integrated evaporator |
US7365371B2 (en) * | 2005-08-04 | 2008-04-29 | Cree, Inc. | Packages for semiconductor light emitting devices utilizing dispensed encapsulants |
CN101351891B (zh) | 2005-12-22 | 2014-11-19 | 科锐公司 | 照明装置 |
US7521728B2 (en) * | 2006-01-20 | 2009-04-21 | Cree, Inc. | Packages for semiconductor light emitting devices utilizing dispensed reflectors and methods of forming the same |
EP1843400A1 (en) * | 2006-03-16 | 2007-10-10 | Centro Ricerche Plast-Optica S.r.l. | Light emission device and corresponding manufacturing process |
KR100738933B1 (ko) * | 2006-03-17 | 2007-07-12 | (주)대신엘이디 | 조명용 led 모듈 |
DE102006014247B4 (de) * | 2006-03-28 | 2019-10-24 | Robert Bosch Gmbh | Bildaufnahmesystem und Verfahren zu dessen Herstellung |
US8469760B2 (en) * | 2006-03-31 | 2013-06-25 | Dowa Electronics Materials Co., Ltd. | Light emitting device and method for producing same |
US8969908B2 (en) * | 2006-04-04 | 2015-03-03 | Cree, Inc. | Uniform emission LED package |
USD738832S1 (en) | 2006-04-04 | 2015-09-15 | Cree, Inc. | Light emitting diode (LED) package |
US9780268B2 (en) * | 2006-04-04 | 2017-10-03 | Cree, Inc. | Submount based surface mount device (SMD) light emitter components and methods |
EP3422425B1 (en) * | 2006-04-24 | 2022-02-23 | CreeLED, Inc. | Side-view surface mount white led |
EP1850399A1 (en) * | 2006-04-25 | 2007-10-31 | ILED Photoelectronics Inc. | Sealing structure for a white light emitting diode |
KR100764391B1 (ko) * | 2006-04-25 | 2007-10-05 | 삼성전기주식회사 | 발광 다이오드 모듈 |
KR100731678B1 (ko) * | 2006-05-08 | 2007-06-22 | 서울반도체 주식회사 | 칩형 발광 다이오드 패키지 및 그것을 갖는 발광 장치 |
US7655486B2 (en) * | 2006-05-17 | 2010-02-02 | 3M Innovative Properties Company | Method of making light emitting device with multilayer silicon-containing encapsulant |
US7989823B2 (en) * | 2006-06-08 | 2011-08-02 | Hong-Yuan Technology Co., Ltd. | Light emitting system, light emitting apparatus and forming method thereof |
CN101467270B (zh) * | 2006-06-14 | 2013-03-27 | 皇家飞利浦电子股份有限公司 | 发光装置 |
US7906794B2 (en) * | 2006-07-05 | 2011-03-15 | Koninklijke Philips Electronics N.V. | Light emitting device package with frame and optically transmissive element |
TWI321857B (en) * | 2006-07-21 | 2010-03-11 | Epistar Corp | A light emitting device |
US7943952B2 (en) * | 2006-07-31 | 2011-05-17 | Cree, Inc. | Method of uniform phosphor chip coating and LED package fabricated using method |
US7804147B2 (en) * | 2006-07-31 | 2010-09-28 | Cree, Inc. | Light emitting diode package element with internal meniscus for bubble free lens placement |
JP5205724B2 (ja) * | 2006-08-04 | 2013-06-05 | 日亜化学工業株式会社 | 発光装置 |
US7910938B2 (en) * | 2006-09-01 | 2011-03-22 | Cree, Inc. | Encapsulant profile for light emitting diodes |
US8425271B2 (en) * | 2006-09-01 | 2013-04-23 | Cree, Inc. | Phosphor position in light emitting diodes |
US20080064131A1 (en) * | 2006-09-12 | 2008-03-13 | Mutual-Tek Industries Co., Ltd. | Light emitting apparatus and method for the same |
KR100757826B1 (ko) * | 2006-09-29 | 2007-09-11 | 서울반도체 주식회사 | 측면 발광 다이오드 패키지 |
JP2010508652A (ja) * | 2006-10-31 | 2010-03-18 | ティーアイアール テクノロジー エルピー | 照明デバイスパッケージ |
US10295147B2 (en) | 2006-11-09 | 2019-05-21 | Cree, Inc. | LED array and method for fabricating same |
US7769066B2 (en) | 2006-11-15 | 2010-08-03 | Cree, Inc. | Laser diode and method for fabricating same |
US7889421B2 (en) * | 2006-11-17 | 2011-02-15 | Rensselaer Polytechnic Institute | High-power white LEDs and manufacturing method thereof |
US20080121911A1 (en) * | 2006-11-28 | 2008-05-29 | Cree, Inc. | Optical preforms for solid state light emitting dice, and methods and systems for fabricating and assembling same |
WO2008127460A2 (en) * | 2006-12-08 | 2008-10-23 | Evident Technologies | Light-emitting device having semiconductor nanocrystal complexes |
US7902560B2 (en) * | 2006-12-15 | 2011-03-08 | Koninklijke Philips Electronics N.V. | Tunable white point light source using a wavelength converting element |
US9178121B2 (en) * | 2006-12-15 | 2015-11-03 | Cree, Inc. | Reflective mounting substrates for light emitting diodes |
DE102006062066A1 (de) * | 2006-12-29 | 2008-07-03 | Osram Opto Semiconductors Gmbh | Linsenanordnung und LED-Anzeigevorrichtung |
US7834367B2 (en) | 2007-01-19 | 2010-11-16 | Cree, Inc. | Low voltage diode with reduced parasitic resistance and method for fabricating |
US7968900B2 (en) * | 2007-01-19 | 2011-06-28 | Cree, Inc. | High performance LED package |
US9159888B2 (en) | 2007-01-22 | 2015-10-13 | Cree, Inc. | Wafer level phosphor coating method and devices fabricated utilizing method |
US9024349B2 (en) | 2007-01-22 | 2015-05-05 | Cree, Inc. | Wafer level phosphor coating method and devices fabricated utilizing method |
DE102007006349A1 (de) * | 2007-01-25 | 2008-07-31 | Osram Opto Semiconductors Gmbh | Anordnung zur Erzeugung von Mischlicht und Verfahren zur Herstellung einer solchen Anordnung |
US8212262B2 (en) * | 2007-02-09 | 2012-07-03 | Cree, Inc. | Transparent LED chip |
US20080197369A1 (en) * | 2007-02-20 | 2008-08-21 | Cree, Inc. | Double flip semiconductor device and method for fabrication |
DE102007021904A1 (de) * | 2007-02-28 | 2008-09-04 | Osram Opto Semiconductors Gmbh | Optoelektronische Vorrichtung mit Gehäusekörper |
KR100890741B1 (ko) * | 2007-03-13 | 2009-03-26 | 삼성전기주식회사 | 고출력 led 패키지 및 그 제조방법 |
US20080258130A1 (en) * | 2007-04-23 | 2008-10-23 | Bergmann Michael J | Beveled LED Chip with Transparent Substrate |
KR100900866B1 (ko) * | 2007-05-09 | 2009-06-04 | 삼성전자주식회사 | 나노결정-금속산화물 복합체를 이용하는 발광 다이오드소자 및 그의 제조방법 |
WO2008151009A1 (en) * | 2007-05-31 | 2008-12-11 | Lumination Llc | Environmentally robust lighting devices and methods of manufacturing same |
WO2009014590A2 (en) | 2007-06-25 | 2009-01-29 | Qd Vision, Inc. | Compositions and methods including depositing nanomaterial |
US20090008662A1 (en) * | 2007-07-05 | 2009-01-08 | Ian Ashdown | Lighting device package |
GB0713242D0 (en) * | 2007-07-09 | 2007-08-15 | Barco Nv | Led filling |
US20090109539A1 (en) * | 2007-07-09 | 2009-04-30 | Bruno Devos | Display panel with improved reflectivity |
US9401461B2 (en) * | 2007-07-11 | 2016-07-26 | Cree, Inc. | LED chip design for white conversion |
US10505083B2 (en) | 2007-07-11 | 2019-12-10 | Cree, Inc. | Coating method utilizing phosphor containment structure and devices fabricated using same |
WO2009014707A2 (en) | 2007-07-23 | 2009-01-29 | Qd Vision, Inc. | Quantum dot light enhancement substrate and lighting device including same |
JP5043554B2 (ja) * | 2007-08-07 | 2012-10-10 | スタンレー電気株式会社 | 半導体発光装置 |
US8128249B2 (en) | 2007-08-28 | 2012-03-06 | Qd Vision, Inc. | Apparatus for selectively backlighting a material |
US8866185B2 (en) * | 2007-09-06 | 2014-10-21 | SemiLEDs Optoelectronics Co., Ltd. | White light LED with multiple encapsulation layers |
US20090065792A1 (en) | 2007-09-07 | 2009-03-12 | 3M Innovative Properties Company | Method of making an led device having a dome lens |
US8783887B2 (en) * | 2007-10-01 | 2014-07-22 | Intematix Corporation | Color tunable light emitting device |
US9012937B2 (en) | 2007-10-10 | 2015-04-21 | Cree, Inc. | Multiple conversion material light emitting diode package and method of fabricating same |
US10256385B2 (en) | 2007-10-31 | 2019-04-09 | Cree, Inc. | Light emitting die (LED) packages and related methods |
TWI452726B (zh) | 2007-11-30 | 2014-09-11 | Univ California | 利用表面粗糙之高度光取出效率之氮化物基發光二極體 |
US9431589B2 (en) * | 2007-12-14 | 2016-08-30 | Cree, Inc. | Textured encapsulant surface in LED packages |
US9041285B2 (en) | 2007-12-14 | 2015-05-26 | Cree, Inc. | Phosphor distribution in LED lamps using centrifugal force |
US8878219B2 (en) * | 2008-01-11 | 2014-11-04 | Cree, Inc. | Flip-chip phosphor coating method and devices fabricated utilizing method |
CN101487581A (zh) * | 2008-01-17 | 2009-07-22 | 富士迈半导体精密工业(上海)有限公司 | 发光二极管光源模组 |
US8637883B2 (en) | 2008-03-19 | 2014-01-28 | Cree, Inc. | Low index spacer layer in LED devices |
JP5654447B2 (ja) * | 2008-04-08 | 2015-01-14 | コーニンクレッカ フィリップス エヌ ヴェ | Ledとルミネセンス物質を有する透過性の支持体とを備えた照明装置。 |
KR101431711B1 (ko) * | 2008-05-07 | 2014-08-21 | 삼성전자 주식회사 | 발광 장치 및 발광 시스템의 제조 방법, 상기 방법을이용하여 제조한 발광 장치 및 발광 시스템 |
CN101577297A (zh) * | 2008-05-09 | 2009-11-11 | 旭丽电子(广州)有限公司 | 发光封装结构及其制造方法 |
JP2009302339A (ja) * | 2008-06-13 | 2009-12-24 | Sanken Electric Co Ltd | 半導体発光装置 |
US20090321758A1 (en) * | 2008-06-25 | 2009-12-31 | Wen-Huang Liu | Led with improved external light extraction efficiency |
US7728399B2 (en) * | 2008-07-22 | 2010-06-01 | National Semiconductor Corporation | Molded optical package with fiber coupling feature |
US8188486B2 (en) | 2008-09-16 | 2012-05-29 | Osram Sylvania Inc. | Optical disk for lighting module |
US8501435B2 (en) * | 2008-10-09 | 2013-08-06 | Sti Medical Systems, Llc | Process for preserving three dimensional orientation to allow registering histopathological diagnoses of tissue to images of that tissue |
US8075165B2 (en) * | 2008-10-14 | 2011-12-13 | Ledengin, Inc. | Total internal reflection lens and mechanical retention and locating device |
DE102008052751A1 (de) * | 2008-10-22 | 2010-04-29 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen eines Lumineszenzkonversionselements, Lumineszenzkonversionselement und optoelektronisches Bauteil |
KR101629654B1 (ko) * | 2008-12-19 | 2016-06-13 | 삼성전자주식회사 | 발광소자 패키지, 백라이트 유닛, 디스플레이 장치 및 조명장치 |
US8507300B2 (en) * | 2008-12-24 | 2013-08-13 | Ledengin, Inc. | Light-emitting diode with light-conversion layer |
KR100981651B1 (ko) * | 2008-12-26 | 2010-09-10 | 김민공 | 렌즈보호형 광소자 페키지 |
DE102009012517A1 (de) * | 2009-03-10 | 2010-09-16 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement |
KR100963743B1 (ko) * | 2009-06-23 | 2010-06-14 | 한국광기술원 | 파장변환물질층을 구비하는 발광 다이오드 및 이의 제조방법 |
US20120235576A1 (en) * | 2009-12-04 | 2012-09-20 | Alessandro Bizzotto | LED Lighting Module with Co-Molded Light Sensor |
US9991427B2 (en) | 2010-03-08 | 2018-06-05 | Cree, Inc. | Photonic crystal phosphor light conversion structures for light emitting devices |
US8525213B2 (en) | 2010-03-30 | 2013-09-03 | Lg Innotek Co., Ltd. | Light emitting device having multiple cavities and light unit having the same |
KR101628690B1 (ko) * | 2010-06-03 | 2016-06-21 | 엘지이노텍 주식회사 | 발광소자 패키지 |
US10546846B2 (en) | 2010-07-23 | 2020-01-28 | Cree, Inc. | Light transmission control for masking appearance of solid state light sources |
WO2012014360A1 (ja) * | 2010-07-26 | 2012-02-02 | 株式会社小糸製作所 | 発光モジュール |
JP5488310B2 (ja) * | 2010-07-30 | 2014-05-14 | 市光工業株式会社 | 車両用灯具の半導体型光源の光源ユニット、車両用灯具 |
TW201207324A (en) * | 2010-08-13 | 2012-02-16 | Foxsemicon Integrated Tech Inc | Lightening structure of LED light source |
JP2012069589A (ja) * | 2010-09-21 | 2012-04-05 | Toshiba Corp | 発光装置 |
US9140429B2 (en) | 2010-10-14 | 2015-09-22 | Cree, Inc. | Optical element edge treatment for lighting device |
US8491140B2 (en) | 2010-11-05 | 2013-07-23 | Cree, Inc. | Lighting device with multiple emitters and remote lumiphor |
DE102010055265A1 (de) * | 2010-12-20 | 2012-06-21 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauteil |
CN102588762A (zh) * | 2011-01-06 | 2012-07-18 | 隆达电子股份有限公司 | 发光二极管杯灯 |
TWI414714B (zh) | 2011-04-15 | 2013-11-11 | Lextar Electronics Corp | 發光二極體杯燈 |
US9166126B2 (en) | 2011-01-31 | 2015-10-20 | Cree, Inc. | Conformally coated light emitting devices and methods for providing the same |
KR101210066B1 (ko) | 2011-01-31 | 2012-12-07 | 엘지이노텍 주식회사 | 광 변환 부재 및 이를 포함하는 표시장치 |
JP5732884B2 (ja) * | 2011-02-09 | 2015-06-10 | 富士通株式会社 | 半導体装置及びその製造方法、電源装置 |
US8791642B2 (en) | 2011-03-03 | 2014-07-29 | Cree, Inc. | Semiconductor light emitting devices having selectable and/or adjustable color points and related methods |
US8796952B2 (en) | 2011-03-03 | 2014-08-05 | Cree, Inc. | Semiconductor light emitting devices having selectable and/or adjustable color points and related methods |
CN102683542B (zh) * | 2011-03-15 | 2014-12-10 | 展晶科技(深圳)有限公司 | Led封装结构 |
US10147853B2 (en) | 2011-03-18 | 2018-12-04 | Cree, Inc. | Encapsulant with index matched thixotropic agent |
KR101798884B1 (ko) * | 2011-05-18 | 2017-11-17 | 삼성전자주식회사 | 발광소자 어셈블리 및 이를 포함하는 전조등 |
GB201109065D0 (en) * | 2011-05-31 | 2011-07-13 | Nanoco Technologies Ltd | Semiconductor nanoparticle-containing materials and light emitting devices incorporating the same |
KR20130009020A (ko) | 2011-07-14 | 2013-01-23 | 엘지이노텍 주식회사 | 광학 부재, 이를 포함하는 표시장치 및 이의 제조방법 |
KR101305696B1 (ko) | 2011-07-14 | 2013-09-09 | 엘지이노텍 주식회사 | 표시장치 및 광학 부재 |
KR101241549B1 (ko) | 2011-07-18 | 2013-03-11 | 엘지이노텍 주식회사 | 광학 부재, 이를 포함하는 표시장치 및 이의 제조방법 |
KR101893494B1 (ko) * | 2011-07-18 | 2018-08-30 | 엘지이노텍 주식회사 | 광학 부재 및 이를 포함하는 표시장치 |
KR101262520B1 (ko) | 2011-07-18 | 2013-05-08 | 엘지이노텍 주식회사 | 광학 부재 및 이를 포함하는 표시장치 |
JPWO2013011628A1 (ja) * | 2011-07-19 | 2015-02-23 | パナソニック株式会社 | 発光装置及びその製造方法 |
KR101294415B1 (ko) | 2011-07-20 | 2013-08-08 | 엘지이노텍 주식회사 | 광학 부재 및 이를 포함하는 표시장치 |
KR101890457B1 (ko) * | 2011-08-10 | 2018-08-21 | 헵타곤 마이크로 옵틱스 피티이. 리미티드 | 광전자 모듈 및 그것을 제조하기 위한 방법 |
US8508126B1 (en) * | 2011-08-29 | 2013-08-13 | Lednovation, Inc. | High efficiency solid state directional lighting including luminescent nanocrystal particles |
CN103000768A (zh) * | 2011-09-09 | 2013-03-27 | 展晶科技(深圳)有限公司 | 发光二极管封装结构的制造方法 |
KR101311539B1 (ko) * | 2011-10-20 | 2013-09-25 | 주식회사 케이이씨 | 다이오드 패키지 |
KR101251815B1 (ko) | 2011-11-07 | 2013-04-09 | 엘지이노텍 주식회사 | 광학 시트 및 이를 포함하는 표시장치 |
US9897284B2 (en) | 2012-03-28 | 2018-02-20 | Ledengin, Inc. | LED-based MR16 replacement lamp |
US10134961B2 (en) | 2012-03-30 | 2018-11-20 | Cree, Inc. | Submount based surface mount device (SMD) light emitter components and methods |
US10222032B2 (en) | 2012-03-30 | 2019-03-05 | Cree, Inc. | Light emitter components and methods having improved electrical contacts |
US9735198B2 (en) | 2012-03-30 | 2017-08-15 | Cree, Inc. | Substrate based light emitter devices, components, and related methods |
EP3240052A1 (en) * | 2012-04-26 | 2017-11-01 | Intematix Corporation | Methods and apparatus for implementing color consistency in remote wavelength conversion |
DE102012215514A1 (de) * | 2012-08-31 | 2014-03-06 | Osram Gmbh | Verfahren zum Herstellen eines LED-Moduls und LED-Modul |
US9182091B2 (en) | 2012-12-14 | 2015-11-10 | Remphos Technologies Llc | LED panel light fixture |
US8882298B2 (en) | 2012-12-14 | 2014-11-11 | Remphos Technologies Llc | LED module for light distribution |
US20140209950A1 (en) * | 2013-01-31 | 2014-07-31 | Luxo-Led Co., Limited | Light emitting diode package module |
US9587790B2 (en) | 2013-03-15 | 2017-03-07 | Cree, Inc. | Remote lumiphor solid state lighting devices with enhanced light extraction |
TWI506822B (zh) * | 2013-03-25 | 2015-11-01 | I Chiun Precision Ind Co Ltd | 具有不對稱環壁的發光二極體晶片承載座 |
US8896008B2 (en) | 2013-04-23 | 2014-11-25 | Cree, Inc. | Light emitting diodes having group III nitride surface features defined by a mask and crystal planes |
CN104241262B (zh) | 2013-06-14 | 2020-11-06 | 惠州科锐半导体照明有限公司 | 发光装置以及显示装置 |
ES2781971T3 (es) * | 2013-06-28 | 2020-09-09 | Lumileds Holding Bv | Dispositivo diodo emisor de luz |
CN110350069B (zh) * | 2013-07-24 | 2023-06-30 | 晶元光电股份有限公司 | 包含波长转换材料的发光管芯及其制作方法 |
KR102264061B1 (ko) * | 2013-09-13 | 2021-06-14 | 루미리즈 홀딩 비.브이. | 플립-칩 led를 위한 프레임 기반 패키지 |
US10797204B2 (en) | 2014-05-30 | 2020-10-06 | Cree, Inc. | Submount based light emitter components and methods |
CN105185890A (zh) * | 2015-08-10 | 2015-12-23 | 深圳市华星光电技术有限公司 | Led光源结构及其封装方法 |
CN106527385B (zh) * | 2016-06-13 | 2019-10-18 | 华南理工大学 | 一种大批量led封装生产过程的品质控制方法 |
WO2019147589A1 (en) | 2018-01-24 | 2019-08-01 | Apple Inc. | Micro led based display panel |
JP6944660B2 (ja) * | 2018-02-27 | 2021-10-06 | 東芝ライテック株式会社 | 車両用照明装置、および車両用灯具 |
JP2020150229A (ja) * | 2019-03-15 | 2020-09-17 | 日亜化学工業株式会社 | 発光装置およびその製造方法 |
US11083059B2 (en) | 2019-10-03 | 2021-08-03 | Creeled, Inc. | Lumiphoric arrangements for light emitting diode packages |
DE102019134904A1 (de) * | 2019-12-18 | 2021-06-24 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches halbleiterbauelement und verfahren zum betreiben eines optoelektronischen halbleiterbauelements |
CN215294804U (zh) | 2020-10-27 | 2021-12-24 | 东芝照明技术株式会社 | 车辆用照明装置及车辆用灯具 |
TWI818418B (zh) * | 2022-01-20 | 2023-10-11 | 國立臺灣科技大學 | 發光裝置 |
DE102023200393A1 (de) | 2023-01-19 | 2024-07-25 | Robert Bosch Gesellschaft mit beschränkter Haftung | Photodetektoreinrichtung und Verfahren zum Herstellen einer Photodetektoreinrichtung |
Citations (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07150114A (ja) * | 1993-11-26 | 1995-06-13 | Olympus Optical Co Ltd | レンズ接合装置 |
JPH0983018A (ja) * | 1995-09-11 | 1997-03-28 | Nippon Denyo Kk | 発光ダイオードユニット |
JPH10190065A (ja) * | 1996-12-27 | 1998-07-21 | Nichia Chem Ind Ltd | 発光装置及びそれを用いたled表示器 |
JPH1187778A (ja) * | 1997-09-02 | 1999-03-30 | Toshiba Corp | 半導体発光素子、半導体発光装置およびその製造方法 |
JP2000156528A (ja) * | 1998-11-19 | 2000-06-06 | Sharp Corp | 発光素子 |
JP2000353826A (ja) * | 1999-06-09 | 2000-12-19 | Sanyo Electric Co Ltd | 混成集積回路装置および光照射装置 |
JP2002509362A (ja) * | 1997-12-15 | 2002-03-26 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング ウント コンパニー オッフェネ ハンデルスゲゼルシャフト | 表面取り付け可能なオプトエレクトロニクス素子を製作する方法及び表面取り付け可能なオプトエレクトロニクス素子 |
JP2002185046A (ja) * | 2000-12-19 | 2002-06-28 | Sharp Corp | チップ部品型ledとその製造方法 |
JP2003046133A (ja) * | 2001-07-26 | 2003-02-14 | Matsushita Electric Works Ltd | 発光装置およびその製造方法 |
JP2003046134A (ja) * | 2001-07-26 | 2003-02-14 | Matsushita Electric Works Ltd | 発光装置の製造方法 |
JP2003110146A (ja) * | 2001-07-26 | 2003-04-11 | Matsushita Electric Works Ltd | 発光装置 |
JP2003159718A (ja) * | 2001-11-27 | 2003-06-03 | Fuji Photo Optical Co Ltd | 複合非球面レンズの製造方法 |
JP2003234511A (ja) * | 2002-02-06 | 2003-08-22 | Toshiba Corp | 半導体発光素子およびその製造方法 |
US20030185526A1 (en) * | 2000-05-12 | 2003-10-02 | Hoehn Klaus | Optoelectronic component and method for the production thereof |
JP2003318448A (ja) * | 2002-02-19 | 2003-11-07 | Nichia Chem Ind Ltd | 発光装置とその形成方法 |
JP2004095969A (ja) * | 2002-09-02 | 2004-03-25 | Stanley Electric Co Ltd | 波長変換素子 |
JP2005039104A (ja) * | 2003-07-17 | 2005-02-10 | Sanyo Electric Co Ltd | 発光ダイオード及びその製造方法 |
JP2005268323A (ja) * | 2004-03-16 | 2005-09-29 | Sumitomo Electric Ind Ltd | 半導体発光装置 |
Family Cites Families (88)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS48102585A (ja) | 1972-04-04 | 1973-12-22 | ||
US3760237A (en) * | 1972-06-21 | 1973-09-18 | Gen Electric | Solid state lamp assembly having conical light director |
US3932881A (en) * | 1972-09-05 | 1976-01-13 | Nippon Electric Co., Inc. | Electroluminescent device including dichroic and infrared reflecting components |
US4081764A (en) | 1972-10-12 | 1978-03-28 | Minnesota Mining And Manufacturing Company | Zinc oxide light emitting diode |
US4501637A (en) * | 1981-06-12 | 1985-02-26 | Motorola, Inc. | LED having self-aligned lens |
US5043716A (en) | 1988-07-14 | 1991-08-27 | Adaptive Micro Systems, Inc. | Electronic display with lens matrix |
US5027168A (en) | 1988-12-14 | 1991-06-25 | Cree Research, Inc. | Blue light emitting diode formed in silicon carbide |
US4918497A (en) | 1988-12-14 | 1990-04-17 | Cree Research, Inc. | Blue light emitting diode formed in silicon carbide |
US4966862A (en) | 1989-08-28 | 1990-10-30 | Cree Research, Inc. | Method of production of light emitting diodes |
US5117279A (en) * | 1990-03-23 | 1992-05-26 | Motorola, Inc. | Semiconductor device having a low temperature uv-cured epoxy seal |
US5210051A (en) | 1990-03-27 | 1993-05-11 | Cree Research, Inc. | High efficiency light emitting diodes from bipolar gallium nitride |
JPH0629577A (ja) * | 1992-07-10 | 1994-02-04 | Sumitomo Electric Ind Ltd | 半導体発光素子の製造方法 |
US5416342A (en) | 1993-06-23 | 1995-05-16 | Cree Research, Inc. | Blue light-emitting diode with high external quantum efficiency |
US5338944A (en) | 1993-09-22 | 1994-08-16 | Cree Research, Inc. | Blue light-emitting diode with degenerate junction structure |
US5393993A (en) | 1993-12-13 | 1995-02-28 | Cree Research, Inc. | Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices |
JPH07176794A (ja) | 1993-12-17 | 1995-07-14 | Nichia Chem Ind Ltd | 面状光源 |
JP3116727B2 (ja) | 1994-06-17 | 2000-12-11 | 日亜化学工業株式会社 | 面状光源 |
JPH0832120A (ja) | 1994-07-19 | 1996-02-02 | Rohm Co Ltd | 面発光表示器 |
US5604135A (en) | 1994-08-12 | 1997-02-18 | Cree Research, Inc. | Method of forming green light emitting diode in silicon carbide |
US5523589A (en) | 1994-09-20 | 1996-06-04 | Cree Research, Inc. | Vertical geometry light emitting diode with group III nitride active layer and extended lifetime |
US5631190A (en) | 1994-10-07 | 1997-05-20 | Cree Research, Inc. | Method for producing high efficiency light-emitting diodes and resulting diode structures |
US5585640A (en) | 1995-01-11 | 1996-12-17 | Huston; Alan L. | Glass matrix doped with activated luminescent nanocrystalline particles |
US5572070A (en) * | 1995-02-06 | 1996-11-05 | Rjr Polymers, Inc. | Integrated circuit packages with heat dissipation for high current load |
US5739554A (en) | 1995-05-08 | 1998-04-14 | Cree Research, Inc. | Double heterojunction light emitting diode with gallium nitride active layer |
US5701451A (en) * | 1995-06-07 | 1997-12-23 | International Business Machines Corporation | Method for fulfilling requests of a web browser |
JPH0927643A (ja) | 1995-07-13 | 1997-01-28 | Stanley Electric Co Ltd | 受光/発光素子 |
DE19638667C2 (de) * | 1996-09-20 | 2001-05-17 | Osram Opto Semiconductors Gmbh | Mischfarbiges Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement |
KR100643442B1 (ko) * | 1996-06-26 | 2006-11-10 | 오스람 게젤샤프트 미트 베쉬랭크터 하프퉁 | 발광 변환 소자를 포함하는 발광 반도체 소자 |
JP3310551B2 (ja) | 1996-08-23 | 2002-08-05 | シャープ株式会社 | 半導体発光装置及びその製造方法 |
US6613247B1 (en) * | 1996-09-20 | 2003-09-02 | Osram Opto Semiconductors Gmbh | Wavelength-converting casting composition and white light-emitting semiconductor component |
US6274890B1 (en) * | 1997-01-15 | 2001-08-14 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device and its manufacturing method |
US5933555A (en) * | 1997-05-01 | 1999-08-03 | Alliance Fiber Optics Products, Inc. | Optical recirculation depolarizer and method of depolarizing light |
US5813753A (en) * | 1997-05-27 | 1998-09-29 | Philips Electronics North America Corporation | UV/blue led-phosphor device with efficient conversion of UV/blues light to visible light |
US5847507A (en) * | 1997-07-14 | 1998-12-08 | Hewlett-Packard Company | Fluorescent dye added to epoxy of light emitting diode lens |
US5962971A (en) * | 1997-08-29 | 1999-10-05 | Chen; Hsing | LED structure with ultraviolet-light emission chip and multilayered resins to generate various colored lights |
US6340824B1 (en) * | 1997-09-01 | 2002-01-22 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device including a fluorescent material |
US6201262B1 (en) | 1997-10-07 | 2001-03-13 | Cree, Inc. | Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure |
KR100485232B1 (ko) * | 1998-02-09 | 2005-04-25 | 세이코 엡슨 가부시키가이샤 | 액정 패널, 이를 구비한 전자 기기 및 박막 트랜지스터 어레이 기판 |
JP2907286B1 (ja) * | 1998-06-26 | 1999-06-21 | サンケン電気株式会社 | 蛍光カバーを有する樹脂封止型半導体発光装置 |
US5959316A (en) * | 1998-09-01 | 1999-09-28 | Hewlett-Packard Company | Multiple encapsulation of phosphor-LED devices |
US6429583B1 (en) * | 1998-11-30 | 2002-08-06 | General Electric Company | Light emitting device with ba2mgsi2o7:eu2+, ba2sio4:eu2+, or (srxcay ba1-x-y)(a1zga1-z)2sr:eu2+phosphors |
JP3604298B2 (ja) | 1999-02-25 | 2004-12-22 | 日亜化学工業株式会社 | 発光ダイオードの形成方法 |
US6155699A (en) * | 1999-03-15 | 2000-12-05 | Agilent Technologies, Inc. | Efficient phosphor-conversion led structure |
DE19918370B4 (de) | 1999-04-22 | 2006-06-08 | Osram Opto Semiconductors Gmbh | LED-Weißlichtquelle mit Linse |
DE19940319B4 (de) | 1999-08-25 | 2004-10-14 | Osram Opto Semiconductors Gmbh | Verfahren zum spannungsarmen Aufsetzen einer Linse auf ein oberflächenmontierbares optoelektronisches Bauelement |
US6504301B1 (en) | 1999-09-03 | 2003-01-07 | Lumileds Lighting, U.S., Llc | Non-incandescent lightbulb package using light emitting diodes |
DE10020465A1 (de) * | 2000-04-26 | 2001-11-08 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Halbleiterbauelement mit Lumineszenzkonversionselement |
JP4066620B2 (ja) * | 2000-07-21 | 2008-03-26 | 日亜化学工業株式会社 | 発光素子、および発光素子を配置した表示装置ならびに表示装置の製造方法 |
JP2002050797A (ja) * | 2000-07-31 | 2002-02-15 | Toshiba Corp | 半導体励起蛍光体発光装置およびその製造方法 |
US6610263B2 (en) * | 2000-08-01 | 2003-08-26 | Enviroscrub Technologies Corporation | System and process for removal of pollutants from a gas stream |
US6747406B1 (en) | 2000-08-07 | 2004-06-08 | General Electric Company | LED cross-linkable phospor coating |
US7129638B2 (en) * | 2000-08-09 | 2006-10-31 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Light emitting devices with a phosphor coating having evenly dispersed phosphor particles and constant thickness |
JP2002057375A (ja) | 2000-08-09 | 2002-02-22 | Rohm Co Ltd | 発光ダイオード |
US6635363B1 (en) | 2000-08-21 | 2003-10-21 | General Electric Company | Phosphor coating with self-adjusting distance from LED chip |
US6614103B1 (en) * | 2000-09-01 | 2003-09-02 | General Electric Company | Plastic packaging of LED arrays |
EP1187226B1 (en) | 2000-09-01 | 2012-12-26 | Citizen Electronics Co., Ltd. | Surface-mount type light emitting diode and method of manufacturing same |
JP5110744B2 (ja) | 2000-12-21 | 2012-12-26 | フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー | 発光装置及びその製造方法 |
US6791119B2 (en) | 2001-02-01 | 2004-09-14 | Cree, Inc. | Light emitting diodes including modifications for light extraction |
DE10109349B4 (de) | 2001-02-27 | 2012-04-19 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Halbleiterbauelement |
US20020163001A1 (en) | 2001-05-04 | 2002-11-07 | Shaddock David Mulford | Surface mount light emitting device package and fabrication method |
KR100419611B1 (ko) * | 2001-05-24 | 2004-02-25 | 삼성전기주식회사 | 발광다이오드 및 이를 이용한 발광장치와 그 제조방법 |
US6958497B2 (en) | 2001-05-30 | 2005-10-25 | Cree, Inc. | Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures |
US6642652B2 (en) | 2001-06-11 | 2003-11-04 | Lumileds Lighting U.S., Llc | Phosphor-converted light emitting device |
US6576488B2 (en) | 2001-06-11 | 2003-06-10 | Lumileds Lighting U.S., Llc | Using electrophoresis to produce a conformally coated phosphor-converted light emitting semiconductor |
US6765801B1 (en) * | 2001-06-25 | 2004-07-20 | Amkor Technology, Inc. | Optical track drain package |
US6766817B2 (en) | 2001-07-25 | 2004-07-27 | Tubarc Technologies, Llc | Fluid conduction utilizing a reversible unsaturated siphon with tubarc porosity action |
US7153015B2 (en) | 2001-12-31 | 2006-12-26 | Innovations In Optics, Inc. | Led white light optical system |
US20030141563A1 (en) * | 2002-01-28 | 2003-07-31 | Bily Wang | Light emitting diode package with fluorescent cover |
US6924514B2 (en) * | 2002-02-19 | 2005-08-02 | Nichia Corporation | Light-emitting device and process for producing thereof |
JP4172196B2 (ja) * | 2002-04-05 | 2008-10-29 | 豊田合成株式会社 | 発光ダイオード |
US6791116B2 (en) * | 2002-04-30 | 2004-09-14 | Toyoda Gosei Co., Ltd. | Light emitting diode |
US7479662B2 (en) | 2002-08-30 | 2009-01-20 | Lumination Llc | Coated LED with improved efficiency |
US7244965B2 (en) * | 2002-09-04 | 2007-07-17 | Cree Inc, | Power surface mount light emitting die package |
US7264378B2 (en) | 2002-09-04 | 2007-09-04 | Cree, Inc. | Power surface mount light emitting die package |
TWI292961B (en) * | 2002-09-05 | 2008-01-21 | Nichia Corp | Semiconductor device and an optical device using the semiconductor device |
AU2003276867A1 (en) | 2002-09-19 | 2004-04-08 | Cree, Inc. | Phosphor-coated light emitting diodes including tapered sidewalls, and fabrication methods therefor |
US6744077B2 (en) | 2002-09-27 | 2004-06-01 | Lumileds Lighting U.S., Llc | Selective filtering of wavelength-converted semiconductor light emitting devices |
US6917057B2 (en) * | 2002-12-31 | 2005-07-12 | Gelcore Llc | Layered phosphor coatings for LED devices |
TWI237546B (en) | 2003-01-30 | 2005-08-01 | Osram Opto Semiconductors Gmbh | Semiconductor-component sending and/or receiving electromagnetic radiation and housing-basebody for such a component |
JP4390541B2 (ja) * | 2003-02-03 | 2009-12-24 | Necエレクトロニクス株式会社 | 半導体装置及びその製造方法 |
US7633093B2 (en) * | 2003-05-05 | 2009-12-15 | Lighting Science Group Corporation | Method of making optical light engines with elevated LEDs and resulting product |
US7029935B2 (en) * | 2003-09-09 | 2006-04-18 | Cree, Inc. | Transmissive optical elements including transparent plastic shell having a phosphor dispersed therein, and methods of fabricating same |
JP2005197369A (ja) | 2004-01-05 | 2005-07-21 | Toshiba Corp | 光半導体装置 |
US7326583B2 (en) * | 2004-03-31 | 2008-02-05 | Cree, Inc. | Methods for packaging of a semiconductor light emitting device |
US7517728B2 (en) * | 2004-03-31 | 2009-04-14 | Cree, Inc. | Semiconductor light emitting devices including a luminescent conversion element |
JP5092432B2 (ja) * | 2007-02-02 | 2012-12-05 | 富士ゼロックス株式会社 | 面発光型半導体レーザ、面発光型半導体レーザの製造方法、光学装置、光照射装置、情報処理装置、光送信装置、光空間伝送装置および光伝送システム |
JP2008283028A (ja) * | 2007-05-11 | 2008-11-20 | Fuji Xerox Co Ltd | 面発光型半導体レーザ、面発光型半導体レーザの製造方法、モジュール、光源装置、情報処理装置、光送信装置、光空間伝送装置および光空間伝送システム。 |
KR100984126B1 (ko) * | 2009-03-30 | 2010-09-28 | 서울대학교산학협력단 | 발광소자 코팅 방법, 광커플러 및 광커플러 제조 방법 |
-
2005
- 2005-02-10 US US11/055,194 patent/US7517728B2/en active Active
- 2005-03-24 WO PCT/US2005/009778 patent/WO2005098976A2/en not_active Application Discontinuation
- 2005-03-24 EP EP05730762.1A patent/EP1730793B1/en active Active
- 2005-03-24 JP JP2007506264A patent/JP5285271B2/ja active Active
- 2005-03-24 KR KR1020067020239A patent/KR20060135848A/ko not_active Application Discontinuation
- 2005-03-30 TW TW094110059A patent/TWI413272B/zh active
- 2005-03-30 TW TW101115666A patent/TWI452740B/zh active
-
2009
- 2009-03-05 US US12/398,626 patent/US7799586B2/en active Active
-
2010
- 2010-09-20 US US12/886,001 patent/US8039859B2/en active Active
-
2011
- 2011-10-13 US US13/272,731 patent/US20120037931A1/en not_active Abandoned
Patent Citations (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07150114A (ja) * | 1993-11-26 | 1995-06-13 | Olympus Optical Co Ltd | レンズ接合装置 |
JPH0983018A (ja) * | 1995-09-11 | 1997-03-28 | Nippon Denyo Kk | 発光ダイオードユニット |
JPH10190065A (ja) * | 1996-12-27 | 1998-07-21 | Nichia Chem Ind Ltd | 発光装置及びそれを用いたled表示器 |
JPH1187778A (ja) * | 1997-09-02 | 1999-03-30 | Toshiba Corp | 半導体発光素子、半導体発光装置およびその製造方法 |
JP2002509362A (ja) * | 1997-12-15 | 2002-03-26 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング ウント コンパニー オッフェネ ハンデルスゲゼルシャフト | 表面取り付け可能なオプトエレクトロニクス素子を製作する方法及び表面取り付け可能なオプトエレクトロニクス素子 |
JP2000156528A (ja) * | 1998-11-19 | 2000-06-06 | Sharp Corp | 発光素子 |
JP2000353826A (ja) * | 1999-06-09 | 2000-12-19 | Sanyo Electric Co Ltd | 混成集積回路装置および光照射装置 |
US20030185526A1 (en) * | 2000-05-12 | 2003-10-02 | Hoehn Klaus | Optoelectronic component and method for the production thereof |
JP2002185046A (ja) * | 2000-12-19 | 2002-06-28 | Sharp Corp | チップ部品型ledとその製造方法 |
JP2003046133A (ja) * | 2001-07-26 | 2003-02-14 | Matsushita Electric Works Ltd | 発光装置およびその製造方法 |
JP2003110146A (ja) * | 2001-07-26 | 2003-04-11 | Matsushita Electric Works Ltd | 発光装置 |
JP2003046134A (ja) * | 2001-07-26 | 2003-02-14 | Matsushita Electric Works Ltd | 発光装置の製造方法 |
JP2003159718A (ja) * | 2001-11-27 | 2003-06-03 | Fuji Photo Optical Co Ltd | 複合非球面レンズの製造方法 |
JP2003234511A (ja) * | 2002-02-06 | 2003-08-22 | Toshiba Corp | 半導体発光素子およびその製造方法 |
JP2003318448A (ja) * | 2002-02-19 | 2003-11-07 | Nichia Chem Ind Ltd | 発光装置とその形成方法 |
JP2004095969A (ja) * | 2002-09-02 | 2004-03-25 | Stanley Electric Co Ltd | 波長変換素子 |
JP2005039104A (ja) * | 2003-07-17 | 2005-02-10 | Sanyo Electric Co Ltd | 発光ダイオード及びその製造方法 |
JP2005268323A (ja) * | 2004-03-16 | 2005-09-29 | Sumitomo Electric Ind Ltd | 半導体発光装置 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013058765A (ja) * | 2007-09-11 | 2013-03-28 | Avago Technologies Ecbu Ip (Singapore) Pte Ltd | 発光装置 |
WO2011151998A1 (ja) * | 2010-05-31 | 2011-12-08 | パナソニック株式会社 | 発光装置及びその製造方法 |
JP2020004842A (ja) * | 2018-06-28 | 2020-01-09 | 日亜化学工業株式会社 | 発光装置及び発光装置の製造方法 |
JP7177330B2 (ja) | 2018-06-28 | 2022-11-24 | 日亜化学工業株式会社 | 発光装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2005098976A3 (en) | 2006-06-15 |
US20090224277A1 (en) | 2009-09-10 |
TW200603439A (en) | 2006-01-16 |
US8039859B2 (en) | 2011-10-18 |
JP5285271B2 (ja) | 2013-09-11 |
EP1730793B1 (en) | 2016-07-20 |
TW201246629A (en) | 2012-11-16 |
US7799586B2 (en) | 2010-09-21 |
EP1730793A2 (en) | 2006-12-13 |
US20120037931A1 (en) | 2012-02-16 |
KR20060135848A (ko) | 2006-12-29 |
US20110006330A1 (en) | 2011-01-13 |
US20050221519A1 (en) | 2005-10-06 |
TWI413272B (zh) | 2013-10-21 |
WO2005098976A2 (en) | 2005-10-20 |
TWI452740B (zh) | 2014-09-11 |
US7517728B2 (en) | 2009-04-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5285271B2 (ja) | 発光変換要素を備える半導体発光デバイスおよびそのパッケージング方法 | |
JP5209959B2 (ja) | 反射器パッケージおよび半導体発光デバイスのパッケージング方法 | |
JP5357423B2 (ja) | 発光デバイスをパッケージングする方法およびパッケージングされた発光デバイス | |
US9166129B2 (en) | Batwing LED with remote phosphor configuration | |
US9018663B2 (en) | Lens-equipped optical semiconductor device and method for manufacturing the same | |
JP5566114B2 (ja) | ケーシングボディを有するオプトエレクトロニクス装置およびその製造方法 | |
CN1947266A (zh) | 包括发光变换元件的半导体发光器件和用于封装该器件的方法 | |
EP4075525B1 (en) | Semiconductor light emitting device and method for manufacturing same |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20080317 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20101116 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20101207 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20110216 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20110223 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20110301 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20110316 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20110324 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110405 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120518 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20120816 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20120823 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20120918 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20120925 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20121016 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20121023 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20121116 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20121204 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130404 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20130411 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130507 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130531 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5285271 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R360 | Written notification for declining of transfer of rights |
Free format text: JAPANESE INTERMEDIATE CODE: R360 |
|
R360 | Written notification for declining of transfer of rights |
Free format text: JAPANESE INTERMEDIATE CODE: R360 |
|
R371 | Transfer withdrawn |
Free format text: JAPANESE INTERMEDIATE CODE: R371 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |