JP2006148045A - 低分子有機電界発光素子及びその製造方法 - Google Patents
低分子有機電界発光素子及びその製造方法 Download PDFInfo
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- JP2006148045A JP2006148045A JP2005151497A JP2005151497A JP2006148045A JP 2006148045 A JP2006148045 A JP 2006148045A JP 2005151497 A JP2005151497 A JP 2005151497A JP 2005151497 A JP2005151497 A JP 2005151497A JP 2006148045 A JP2006148045 A JP 2006148045A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/06—Luminescent, e.g. electroluminescent, chemiluminescent materials containing organic luminescent materials
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2101/00—Properties of the organic materials covered by group H10K85/00
- H10K2101/10—Triplet emission
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2101/00—Properties of the organic materials covered by group H10K85/00
- H10K2101/90—Multiple hosts in the emissive layer
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/321—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
- H10K85/324—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising aluminium, e.g. Alq3
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
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Abstract
【解決手段】 本発明による有機電界発光素子は、基板と、第1の電極と、少なくとも一つの発光層を含む有機膜層と、第2の電極と、を含み、前記発光層は、少なくとも一つの燐光ドーパントと2種以上のホスト物質からなることを特徴とする。
【選択図】 図1C
Description
洗浄及び乾燥過程を経たITO透明電極上に有機電界発光素子の正孔注入層と正孔輸送層の役割をするN,N'−ジ(1−ナフチル)−N,N'−ジフェニルベンジディン(NPD)を10−6Torrの真空下で50nmの厚さで蒸着した。
101 基板
102 第1の電極
104 第2の電極
200 ドナー基板
201 基材層
202 光−熱変換層
203 転写層
203' 発光層
Claims (24)
- 基板と、
第1の電極と、
少なくとも一つの発光層を含む有機膜層と、
第2の電極と、を含み、
前記発光層は、少なくとも一つの燐光ドーパントと2種以上のホスト物質からなること
を特徴とする有機電界発光素子。 - 前記ホスト物質は、第1のホスト物質と第2のホスト物質からなること
を特徴とする請求項1に記載の有機電界発光素子。 - 前記第2のホスト物質は、前記第1のホスト物質の結晶化発生を抑制し、電子輸送特性を有する物質からなること
を特徴とする請求項2に記載の有機電界発光素子。 - 前記第1のホスト物質は、カルバゾール(carbazol)系、アリールアミン系、ヒドラゾーン系及びスターバースト系よりなった群から選択された一つの物質からなること
を特徴とする請求項2に記載の有機電界発光素子。 - 前記第2のホスト物質は、有機金属系、オキサディアゾール(oxadiazole)系、トリアゾール(triazole)系、トリアジン(triazine)系及びスピロフルオレン(spiro fluorene)系よりなった群から選択された一つの物質からなること
を特徴とする請求項2に記載の有機電界発光素子。 - 前記第2のホスト物質は、第1のホスト物質の重量1を基準として0.1〜10の重量比で添加されること
を特徴とする請求項1記載の有機電界発光素子。 - 前記第2のホスト物質は、第1のホスト物質の重量1を基準として0.3〜3の重量比で添加されること
を特徴とする請求項1に記載の有機電界発光素子。 - 前記燐光ドーパントは、Pt、Ir、Tb及びEuよりなった群から選択される一つの物質を含む有機金属錯体に形成されること
を特徴とする請求項1に記載の有機電界発光素子。 - 前記有機膜層は、正孔注入層、正孔輸送層、電子注入層、正孔抑制層及び電子輸送層のうちで一つ以上の層をさらに含むこと
を特徴とする請求項1に記載の有機電界発光素子。 - 基板が提供される段階と、
前記基板に第1の電極を形成する段階と、
前記第1の電極上に少なくとも発光層を含む有機膜層を形成する段階と、
前記有機膜層の上部に第2の電極を形成する段階と、を含み、
前記発光層は、少なくとも一つの燐光ドーパントと2種以上のホスト物質からなること
を特徴とする有機電界発光素子の製造方法。 - 前記発光層は、レーザー熱転写法、真空蒸着、スプレーコーティング及びインクジェットプリンティング法のうちで一つの方式を選択して形成されること
を特徴とする請求項10に記載の有機電界発光素子の製造方法。 - 前記レーザー熱転写法は、前記第1の電極が形成された基板の画素領域とドナー基板を対向して配置し、前記ドナー基板に選択的にレーザーを照射して少なくとも発光層を含む有機膜を形成し、
前記ドナー基板は、少なくとも一つの燐光ドーパント、第1のホスト物質及び第2のホスト物質からなる転写層を具備すること
を特徴とする請求項11に記載の有機電界発光素子の製造方法。 - 前記転写層は、スプレーコーティング方式、ディップコーティング方式、グラビアコーティング方式、ロールコーティング方式、スピンコーティング方式及び真空蒸着方式のうちで一つの方式を選択して形成すること
を特徴とする請求項12に記載の有機電界発光素子の製造方法。 - 前記第1のホスト物質は、カルバゾール系、アリールアミン系、ヒドラゾーン系及びスターバースト系よりなった群から選択された一つの物質からなること
を特徴とする請求項12に記載の有機電界発光素子の製造方法。 - 前記第2のホスト物質は、有機金属系、オキサディアゾール系、トリアゾール系、トリアジン系及びスピロフルオレン系よりなった群から選択された一つの物質からなること
を特徴とする請求項12に記載の有機電界発光素子の製造方法。 - 前記第2のホスト物質は、第1のホスト物質の重量1を基準として0.33〜3の重量比で添加されること
を特徴とする請求項12に記載の有機電界発光素子の製造方法。 - 前記有機膜層は、正孔注入層、正孔輸送層、電子注入層、正孔抑制層及び電子輸送層のうちで一つ以上の層をさらに含むこと
を特徴とする請求項10に記載の有機電界発光素子の製造方法。 - 前記有機膜層は、真空蒸着、スプレーコーティングまたは発光層形成の時にレーザー熱転写法により同時に形成されること
を特徴とする請求項10に記載の有機電界発光素子の製造方法。 - 基材層と、
前記基材層の上部に形成された光−熱変換層と、
前記光−熱変換層上に形成された転写層と、を含み、
前記転写層は、少なくとも一つの燐光ドーパント、第1のホスト物質及び第2のホスト物質からなること
を特徴とするドナー基板。 - 前記第2のホスト物質は、第1のホスト物質の結晶化発生を抑制し、電子輸送特性を有する物質からなること
を特徴とする請求項19に記載のドナー基板。 - 前記第1のホスト物質は、カルバゾール系、アリールアミン系、ヒドラゾーン系及びスターバースト系よりなった群から選択された一つの物質からなること
を特徴とする請求項19に記載のドナー基板。 - 前記第2のホスト物質は、有機金属系、オキサディアゾール系、トリアゾール系、トリアジン系及びスピロフルオレン系よりなった群から選択された一つの物質からなること
を特徴とする請求項19に記載のドナー基板。 - 前記第2のホスト物質は、第1のホスト物質の重量1を基準として0.1〜10重量比で混合すること
を特徴とする請求項19に記載のドナー基板。 - 前記レーザー熱転写用ドナー基板は、前記光−熱変換層上にガス生成層、バッファー層及び金属反射膜のうちで少なくとも一つの層をさらに含むこと
を特徴とする請求項19に記載のドナー基板。
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JP4744931B2 (ja) | 2011-08-10 |
US20060103298A1 (en) | 2006-05-18 |
US20090197497A1 (en) | 2009-08-06 |
US7579772B2 (en) | 2009-08-25 |
KR100721565B1 (ko) | 2007-05-23 |
US7959993B2 (en) | 2011-06-14 |
KR20060055061A (ko) | 2006-05-23 |
CN1780019A (zh) | 2006-05-31 |
CN100565962C (zh) | 2009-12-02 |
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