JP2005522022A - 高電圧に耐えるパワー半導体モジュール用パッケージ - Google Patents
高電圧に耐えるパワー半導体モジュール用パッケージ Download PDFInfo
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- JP2005522022A JP2005522022A JP2003568946A JP2003568946A JP2005522022A JP 2005522022 A JP2005522022 A JP 2005522022A JP 2003568946 A JP2003568946 A JP 2003568946A JP 2003568946 A JP2003568946 A JP 2003568946A JP 2005522022 A JP2005522022 A JP 2005522022A
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- Prior art keywords
- power semiconductor
- semiconductor module
- insulating material
- electrical conductor
- package
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/62—Protection against overvoltage, e.g. fuses, shunts
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K5/00—Casings, cabinets or drawers for electric apparatus
- H05K5/06—Hermetically-sealed casings
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/14—Mounting supporting structure in casing or on frame or rack
- H05K7/1422—Printed circuit boards receptacles, e.g. stacked structures, electronic circuit modules or box like frames
- H05K7/1427—Housings
- H05K7/1432—Housings specially adapted for power drive units or power converters
- H05K7/14322—Housings specially adapted for power drive units or power converters wherein the control and power circuits of a power converter are arranged within the same casing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Casings For Electric Apparatus (AREA)
Abstract
Description
2 第二の導線
30 ガスを充填された体積部
301 部分体積部
302 残りの部分体積部
31 パッケージカバー
32 パッケージ側壁
33 パッケージ底部
34 電気絶縁性の構造体
35 第一の開口部
36 第二の開口部
4 絶縁材料
5 表面
61 基板
62 導電層(半田層)
7 パワー半導体構成素子
8 制御ユニット
9 第三の導線
10 絶縁物体
A−B 断面の線
Claims (10)
- ・絶縁材料(4)を部分的に充填されたパッケージと、
・絶縁材料(4)で覆われたパワー半導体構成素子(7)と、
・パッケージ内部における、ガスを充填された体積部(30)と、
・ガスを充填された体積部(30)と境界を接する、絶縁材料の表面(5)と、
・ガスを充填された体積部(30)および絶縁材料(4)の表面(5)を通して配線されている、少なくとも一つの第一の電気導線(1)と少なくとも一つの第二の電気導線(30)とを有するパワー半導体モジュールにおいて、
絶縁材料(4)の表面(5)上に延びる表面漏れの経路を延長または解消するための手段(34,10)が、第一の電気導線(1)と第二の電気導線(2)間の領域において、この表面(5)内に沈み込んでいることを特徴とするパワー半導体モジュール。 - パッケージ壁(31,32,33)の電気絶縁性の構造体(34)が、第一の電気導線(1)と第二の電気導線(2)間の領域において、絶縁材料(4)の表面(5)内に沈み込んでいることを特徴とする請求項1に記載のパワー半導体モジュール。
- 絶縁物体(10)が、第一の電気導線(1)と第二の電気導線(2)間の領域において、絶縁材料(4)の表面(5)内に沈み込んでいることを特徴とする請求項1に記載のパワー半導体モジュール。
- パワー半導体モジュールが、少なくとも一つの制御ユニット(8)を有し、この制御ユニットを用いて、パワー半導体構成素子(7)を制御可能であることを特徴とする請求項1から3までのいずれか一つに記載のパワー半導体モジュール。
- 制御ユニット(8)が、絶縁材料(4)で取り囲まれていることを特徴とする請求項4に記載のパワー半導体モジュール。
- 構造体(34)が、ガスを充填された体積部(30)において、第一の電気導線(1)と第二の電気導線(2)を相互に遮蔽していることを特徴とする請求項1から5までのいずれか一つに記載のパワー半導体モジュール。
- ・当該のパワー半導体構成素子が、少なくとも一つの主接点を有することと、
・第一の電気導線(1)が、このパワー半導体構成素子(7)の少なくとも一つの主接点と接続していることと、
・第二の電気導線(2)が、制御ユニット(8)と接続していることとを特徴とする請求項4、5または6に記載のパワー半導体モジュール。 - パッケージ壁(31,32,33)の構造体(34)が、ガスを充填された体積部(30)の中の部分体積部(301)を、残りの部分体積部(302)から切り離しており、この部分体積部(301)を通して、第一の電気導線(1)が配線されており、この残りの体積部を通して、第二の電気導線(2)が配線されていることを特徴とする請求項1から7までのいずれか一つに記載のパワー半導体モジュール。
- パッケージ壁(31,32,33)が、第一と第二の開口部(35,36)を有し、これらの開口部が、部分体積部(301)をパッケージの外部と結び付けていることを特徴とする請求項8に記載のパワー半導体モジュール。
- パッケージ壁の構造体(34)が、第一または第二の電気導線(1,2)を管状に取り囲んでいることを特徴とする請求項9に記載のパワー半導体モジュール。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP02405110A EP1336990A1 (de) | 2002-02-14 | 2002-02-14 | Gehäuse für ein hochspannungsfestes Leistungshalbleitermodul |
PCT/CH2003/000103 WO2003069968A2 (de) | 2002-02-14 | 2003-02-13 | Gehäuse für ein hochspannungsfestes leistungshalbleitermodul |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2005522022A true JP2005522022A (ja) | 2005-07-21 |
JP2005522022A5 JP2005522022A5 (ja) | 2006-03-23 |
JP4652692B2 JP4652692B2 (ja) | 2011-03-16 |
Family
ID=27619202
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003568946A Expired - Lifetime JP4652692B2 (ja) | 2002-02-14 | 2003-02-13 | 高電圧に耐えるパワー半導体モジュール |
Country Status (5)
Country | Link |
---|---|
EP (2) | EP1336990A1 (ja) |
JP (1) | JP4652692B2 (ja) |
AU (1) | AU2003203111A1 (ja) |
DE (1) | DE50300583D1 (ja) |
WO (1) | WO2003069968A2 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ATE514187T1 (de) * | 2005-09-27 | 2011-07-15 | Semikron Elektronik Gmbh | Leistungshalbleitermodul mit überstromschutzeinrichtung |
DE102005046063B3 (de) | 2005-09-27 | 2007-03-15 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul mit Überstromschutzeinrichtung |
DE102009000884B3 (de) * | 2009-02-16 | 2010-10-07 | Semikron Elektronik Gmbh & Co. Kg | Halbleitermodul mit Gehäuse aus präkeramischem Polymer |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58112354A (ja) * | 1981-12-25 | 1983-07-04 | Fuji Electric Co Ltd | サイリスタ用接続導体 |
JPH08191130A (ja) * | 1995-01-11 | 1996-07-23 | Hitachi Ltd | 半導体モジュール |
JPH10173098A (ja) * | 1996-12-10 | 1998-06-26 | Mitsubishi Electric Corp | パワー半導体装置およびその製法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3621994A1 (de) * | 1986-07-01 | 1988-01-14 | Bbc Brown Boveri & Cie | Leistungshalbleitermodul |
DE4418426B4 (de) * | 1993-09-08 | 2007-08-02 | Mitsubishi Denki K.K. | Halbleiterleistungsmodul und Verfahren zur Herstellung des Halbleiterleistungsmoduls |
JPH1167977A (ja) * | 1997-08-25 | 1999-03-09 | Hitachi Ltd | 樹脂封止型パワーモジュール装置およびその製法 |
-
2002
- 2002-02-14 EP EP02405110A patent/EP1336990A1/de not_active Withdrawn
-
2003
- 2003-02-13 WO PCT/CH2003/000103 patent/WO2003069968A2/de active IP Right Grant
- 2003-02-13 DE DE50300583T patent/DE50300583D1/de not_active Expired - Lifetime
- 2003-02-13 EP EP03701416A patent/EP1474828B1/de not_active Expired - Lifetime
- 2003-02-13 AU AU2003203111A patent/AU2003203111A1/en not_active Abandoned
- 2003-02-13 JP JP2003568946A patent/JP4652692B2/ja not_active Expired - Lifetime
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58112354A (ja) * | 1981-12-25 | 1983-07-04 | Fuji Electric Co Ltd | サイリスタ用接続導体 |
JPH08191130A (ja) * | 1995-01-11 | 1996-07-23 | Hitachi Ltd | 半導体モジュール |
JPH10173098A (ja) * | 1996-12-10 | 1998-06-26 | Mitsubishi Electric Corp | パワー半導体装置およびその製法 |
Also Published As
Publication number | Publication date |
---|---|
JP4652692B2 (ja) | 2011-03-16 |
AU2003203111A1 (en) | 2003-09-04 |
AU2003203111A8 (en) | 2003-09-04 |
DE50300583D1 (de) | 2005-06-30 |
EP1474828A2 (de) | 2004-11-10 |
WO2003069968A3 (de) | 2003-11-13 |
EP1336990A1 (de) | 2003-08-20 |
EP1474828B1 (de) | 2005-05-25 |
WO2003069968A2 (de) | 2003-08-21 |
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