JP5075368B2 - 桶形状のベースボディを備えたパワー半導体モジュール - Google Patents
桶形状のベースボディを備えたパワー半導体モジュール Download PDFInfo
- Publication number
- JP5075368B2 JP5075368B2 JP2006191708A JP2006191708A JP5075368B2 JP 5075368 B2 JP5075368 B2 JP 5075368B2 JP 2006191708 A JP2006191708 A JP 2006191708A JP 2006191708 A JP2006191708 A JP 2006191708A JP 5075368 B2 JP5075368 B2 JP 5075368B2
- Authority
- JP
- Japan
- Prior art keywords
- power semiconductor
- semiconductor module
- housing
- substrate
- base body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
- H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
- H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/4813—Connecting within a semiconductor or solid-state body, i.e. fly wire, bridge wire
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4846—Connecting portions with multiple bonds on the same bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Dispersion Chemistry (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Hybrid Cells (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Description
2 ベースプレート/ベースボディ
20 ベースボディの底領域
22 ベースボディの底領域の穴
24 ベースボディの側壁
26 ベースボディの側壁の縁領域
28 ベースボディの領域
3 ハウジング
32 ハウジングの第1部分
34 ハウジングの第2部分
36 ハウジングの延長部
38 ハウジングの被覆部
40 端子要素(パワー端子)
5 基板
52 金属性の積層部(導体パス:接続パス)
53 金属性の積層部
54 絶縁材料ボディ
56 基板の穴
60 端子要素(補助端子)
70 ボンディング接続部
72 パワー半導体素子
80 封止剤(絶縁質量体)
90 冷却体
Claims (7)
- 冷却体(90)上に取り付けるベースプレート(2)を備えたパワー半導体モジュール(1)であって、このパワー半導体モジュール(1)が、少なくとも、ハウジング(3)と、外部に通じる端子要素(40、60)と、ハウジング(3)内に配設されている電気絶縁式の少なくとも1つの基板(5)とを有し、この基板(5)の方が、絶縁材料ボディ(54)と、ベースプレート(2)とは反対側にある絶縁材料ボディ(54)の第1主面上に設けられていて互いに電気絶縁されている金属性の複数の接続パス(52)と、これらの接続パス(54)上に配設されていて少なくとも1つの接続要素(70)を備えた少なくとも1つのパワー半導体素子(72)とを有する、前記パワー半導体モジュール(1)において、
ベースボディ(2)が、桶形状に形成されている部分を有し、この部分が、前記の少なくとも1つの基板(5)を、この桶部材の側壁(24)がこの桶部材の内部の絶縁質量体(80)のレベル高さよりも大きな高さを有するように包囲しており、桶部材が少なくとも1つの接続要素(70)及び少なくとも1つのパワー半導体素子(72)を包囲していること、及び
ハウジング(3)が、縁領域又は表面で、桶部材の側壁に当接しており、それによりハウジング(3)がパワー半導体モジュールのカバーとして作用し、且つ、ハウジング(3)がパワー半導体モジュール(1)の内部への複数の延長部(36)を有し、これら複数の延長部(36)が、冷却体(90)上にパワー半導体モジュール(1)を固定するための捩込み接続部を配設するために連続穴を有すること
を特徴とする、パワー半導体モジュール(1)。 - ハウジング(3)が接着接続部及び/又はスナップ・ロック接続部を用いて桶部材の側壁(24)の縁領域(26)上に配設されていることを特徴とする、請求項1に記載のパワー半導体モジュール(1)。
- 複数の延長部(36)がベースボディ(2)の底領域(20)に至るまで達し、この底領域(20)が同様に穴(22)を有し、及び/又は、延長部(36)が基板(5)に至るまでに達し、基板(5)及びベースボディ(2)の底領域(20)が穴(56、22)を有することを特徴とする、請求項1に記載のパワー半導体モジュール(1)。
- パワー半導体モジュール(1)のベースボディ(2)が冷却体(90)及び/又は基板(5)に対して接着接続部を用いて固定されていることを特徴とする、請求項1に記載のパワー半導体モジュール(1)。
- 基板(5)の絶縁材料ボディ(54)が直接的にベースボディ(2)の底領域(20)上に接着接続部を用いて固定されていることを特徴とする、請求項4に記載のパワー半導体モジュール(1)。
- ハウジング(3)が一部材で形成されていることを特徴とする、請求項1に記載のパワー半導体モジュール(1)。
- ハウジング(3)が、ベースボディ(2)の桶状部分の側壁(24)とオーバーラップしていることを特徴とする、請求項1に記載のパワー半導体モジュール(1)。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102005037522.7 | 2005-08-09 | ||
DE102005037522A DE102005037522A1 (de) | 2005-08-09 | 2005-08-09 | Leistungshalbleitermodul mit wannenförmigem Grundkörper |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007049131A JP2007049131A (ja) | 2007-02-22 |
JP5075368B2 true JP5075368B2 (ja) | 2012-11-21 |
Family
ID=37529277
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006191708A Expired - Fee Related JP5075368B2 (ja) | 2005-08-09 | 2006-07-12 | 桶形状のベースボディを備えたパワー半導体モジュール |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP1753025B1 (ja) |
JP (1) | JP5075368B2 (ja) |
AT (1) | ATE445910T1 (ja) |
DE (2) | DE102005037522A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2117203A4 (en) | 2007-02-28 | 2011-04-27 | Nec Corp | PORTABLE ELECTRONIC DEVICE |
DE102008054932B4 (de) * | 2008-12-18 | 2011-12-01 | Infineon Technologies Ag | Leistungshalbleitermodul mit versteifter Bodenplatte |
DE102010043446B3 (de) | 2010-11-05 | 2012-01-12 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitersystem |
CN104067387B (zh) | 2012-03-22 | 2016-12-14 | 三菱电机株式会社 | 半导体装置及其制造方法 |
EP3799546A1 (de) * | 2019-09-25 | 2021-03-31 | Siemens Aktiengesellschaft | Träger für elektrische bauelemente |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3604882A1 (de) * | 1986-02-15 | 1987-08-20 | Bbc Brown Boveri & Cie | Leistungshalbleitermodul und verfahren zur herstellung des moduls |
DE3937045A1 (de) * | 1989-11-07 | 1991-05-08 | Abb Ixys Semiconductor Gmbh | Leistungshalbleitermodul |
US5005069A (en) * | 1990-04-30 | 1991-04-02 | Motorola Inc. | Rectifier and method |
JP2883787B2 (ja) * | 1993-07-20 | 1999-04-19 | 富士電機株式会社 | パワー半導体装置用基板 |
JPH07297575A (ja) * | 1994-04-21 | 1995-11-10 | Mitsubishi Electric Corp | パワーモジュール装置 |
JP3650162B2 (ja) * | 1995-04-24 | 2005-05-18 | 三菱電機株式会社 | 内燃機関用点火装置 |
DE19533298A1 (de) * | 1995-09-08 | 1997-03-13 | Siemens Ag | Elektronisches Modul mit Leistungsbauelementen |
JP3449217B2 (ja) * | 1998-04-30 | 2003-09-22 | 株式会社豊田自動織機 | 半導体モジュール |
JP2000216332A (ja) * | 1999-01-20 | 2000-08-04 | Hitachi Ltd | 半導体装置 |
JP3667130B2 (ja) * | 1998-12-25 | 2005-07-06 | 京セラ株式会社 | 配線基板モジュール |
EP1818980A3 (de) * | 1999-06-22 | 2010-08-11 | Infineon Technologies AG | Substrat für Hochspannungsmodule |
DE10129006B4 (de) * | 2001-06-15 | 2009-07-30 | Conti Temic Microelectronic Gmbh | Elektronische Baugruppe |
JP4737885B2 (ja) * | 2001-08-08 | 2011-08-03 | イビデン株式会社 | モジュール用基板 |
DE10316356B4 (de) * | 2003-04-10 | 2012-07-26 | Semikron Elektronik Gmbh & Co. Kg | Modular aufgebautes Leistungshalbleitermodul |
DE10333329B4 (de) * | 2003-07-23 | 2011-07-21 | SEMIKRON Elektronik GmbH & Co. KG, 90431 | Leistungshalbleitermodul mit biegesteifer Grundplatte |
-
2005
- 2005-08-09 DE DE102005037522A patent/DE102005037522A1/de not_active Withdrawn
-
2006
- 2006-07-12 JP JP2006191708A patent/JP5075368B2/ja not_active Expired - Fee Related
- 2006-07-18 EP EP06014878A patent/EP1753025B1/de not_active Not-in-force
- 2006-07-18 AT AT06014878T patent/ATE445910T1/de active
- 2006-07-18 DE DE502006005081T patent/DE502006005081D1/de active Active
Also Published As
Publication number | Publication date |
---|---|
DE102005037522A1 (de) | 2007-02-15 |
ATE445910T1 (de) | 2009-10-15 |
DE502006005081D1 (de) | 2009-11-26 |
EP1753025B1 (de) | 2009-10-14 |
EP1753025A2 (de) | 2007-02-14 |
EP1753025A3 (de) | 2008-07-23 |
JP2007049131A (ja) | 2007-02-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6237912B2 (ja) | パワー半導体モジュール | |
CN108231714B (zh) | 一种功率模块及其制作方法 | |
JP2013232614A (ja) | 半導体装置 | |
US11533824B2 (en) | Power semiconductor module and a method for producing a power semiconductor module | |
US20120235293A1 (en) | Semiconductor device including a base plate | |
WO2000068992A1 (en) | Semiconductor device | |
US9466542B2 (en) | Semiconductor device | |
JP5075368B2 (ja) | 桶形状のベースボディを備えたパワー半導体モジュール | |
WO2013171946A1 (ja) | 半導体装置の製造方法および半導体装置 | |
US11581230B2 (en) | Power semiconductor module and a method for producing a power semiconductor module | |
JP2002314038A (ja) | パワー半導体モジュール | |
US20230170287A1 (en) | Power semiconductor module, method for assembling a power semiconductor module and housing for a power semiconductor module | |
JP7237647B2 (ja) | 回路基板および電子装置 | |
JP2007073782A (ja) | 大電力用半導体装置 | |
JP5135101B2 (ja) | 基板キャリア用の密閉機構を備えるパワー半導体モジュールおよびその製造方法 | |
JP4051027B2 (ja) | パワー半導体デバイスモジュール | |
JP4208490B2 (ja) | 半導体電力用モジュール及びその製造方法 | |
CN103779282B (zh) | 一种便于安装的功率半导体模块 | |
JP7512659B2 (ja) | 半導体モジュール及び半導体モジュールの製造方法 | |
JP6769556B2 (ja) | 半導体装置及び半導体モジュール | |
US10251256B2 (en) | Heat dissipating structure | |
JP2002314037A (ja) | パワー半導体モジュール | |
JP2005354118A (ja) | 混成集積回路装置 | |
JP2009164511A (ja) | 半導体装置およびその製造方法 | |
US11996348B2 (en) | Semiconductor module assembly having a cooling body and at least one semiconductor module |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20090501 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20110610 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110705 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20111005 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120131 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120312 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120814 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120827 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150831 Year of fee payment: 3 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |