JP2005350317A - 単結晶の製造方法 - Google Patents
単結晶の製造方法 Download PDFInfo
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- JP2005350317A JP2005350317A JP2004174700A JP2004174700A JP2005350317A JP 2005350317 A JP2005350317 A JP 2005350317A JP 2004174700 A JP2004174700 A JP 2004174700A JP 2004174700 A JP2004174700 A JP 2004174700A JP 2005350317 A JP2005350317 A JP 2005350317A
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Abstract
【解決手段】 結晶の成長方向と種子結晶の結晶方位のずれ角(θ)を、所定の値以下とする。るつぼの半径(r)と、結晶成長の進行に伴って成長結晶の外周表面に顕在化する結晶面方位を反映したファセット面の水平方向の幅(a)との関係式を導き、ずれ角(θ)を補正した種子結晶を用いて結晶成長させる。
【選択図】 図5
Description
2 結晶原料
3,13,23 種子結晶
4 発熱体
5,15,25 原料溶液
6,16,26 成長結晶
7 ファセット面
8,18,28 温度勾配曲線
Claims (4)
- 炉内に保持されたるつぼ内の原料溶液を加熱溶解し、前記るつぼの下方より上方に向かって前記原料溶液を除冷することにより、前記るつぼの底部に配置された種子結晶と同じ結晶面方位を有する結晶を成長させる単結晶の製造方法において、
前記結晶の成長方向と前記種子結晶の結晶方位のずれ角(θ)を、所定の値以下とすることを特徴とする単結晶の製造方法。 - 前記結晶の主成分は、周期率表Ia族とVa族から構成され、Ia族はカリウムであり、Va族はニオブ、タンタルの少なくともいずれかであることを特徴とする請求項1または2に記載の単結晶の製造方法。
- 前記結晶の主成分は、周期率表Ia族とIIa族のうち少なくとも1つを、添加不純物として含むことを特徴とする請求項3に記載の単結晶の製造方法。
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JP2004174700A JP4571826B2 (ja) | 2004-06-11 | 2004-06-11 | 単結晶の製造方法 |
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JP2004174700A JP4571826B2 (ja) | 2004-06-11 | 2004-06-11 | 単結晶の製造方法 |
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JP2005350317A true JP2005350317A (ja) | 2005-12-22 |
JP4571826B2 JP4571826B2 (ja) | 2010-10-27 |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8048221B2 (en) | 2006-01-20 | 2011-11-01 | Stoddard Nathan G | Methods and apparatuses for manufacturing monocrystalline cast silicon and monocrystalline cast silicon bodies for photovoltaics |
US8440157B2 (en) | 2007-07-20 | 2013-05-14 | Amg Idealcast Solar Corporation | Methods and apparatuses for manufacturing cast silicon from seed crystals |
US8591649B2 (en) | 2007-07-25 | 2013-11-26 | Advanced Metallurgical Group Idealcast Solar Corp. | Methods for manufacturing geometric multi-crystalline cast materials |
US8709154B2 (en) | 2007-07-25 | 2014-04-29 | Amg Idealcast Solar Corporation | Methods for manufacturing monocrystalline or near-monocrystalline cast materials |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01278490A (ja) * | 1988-04-28 | 1989-11-08 | Nippon Telegr & Teleph Corp <Ntt> | 結晶育成方法および結晶育成用るつぼ |
JPH11302094A (ja) * | 1998-04-24 | 1999-11-02 | Japan Energy Corp | 化合物半導体単結晶の製造方法 |
-
2004
- 2004-06-11 JP JP2004174700A patent/JP4571826B2/ja not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01278490A (ja) * | 1988-04-28 | 1989-11-08 | Nippon Telegr & Teleph Corp <Ntt> | 結晶育成方法および結晶育成用るつぼ |
JPH11302094A (ja) * | 1998-04-24 | 1999-11-02 | Japan Energy Corp | 化合物半導体単結晶の製造方法 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8048221B2 (en) | 2006-01-20 | 2011-11-01 | Stoddard Nathan G | Methods and apparatuses for manufacturing monocrystalline cast silicon and monocrystalline cast silicon bodies for photovoltaics |
US8628614B2 (en) | 2006-01-20 | 2014-01-14 | Amg Idealcast Solar Corporation | Methods and apparatus for manufacturing monocrystalline cast silicon and monocrystalline cast silicon bodies for photovoltaics |
US8951344B2 (en) | 2006-01-20 | 2015-02-10 | Amg Idealcast Solar Corporation | Methods and apparatuses for manufacturing geometric multicrystalline cast silicon and geometric multicrystalline cast silicon bodies for photovoltaics |
US8440157B2 (en) | 2007-07-20 | 2013-05-14 | Amg Idealcast Solar Corporation | Methods and apparatuses for manufacturing cast silicon from seed crystals |
US8591649B2 (en) | 2007-07-25 | 2013-11-26 | Advanced Metallurgical Group Idealcast Solar Corp. | Methods for manufacturing geometric multi-crystalline cast materials |
US8709154B2 (en) | 2007-07-25 | 2014-04-29 | Amg Idealcast Solar Corporation | Methods for manufacturing monocrystalline or near-monocrystalline cast materials |
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JP4571826B2 (ja) | 2010-10-27 |
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