JP2003152111A - 半導体記憶装置 - Google Patents

半導体記憶装置

Info

Publication number: JP2003152111A
Authority: JP; Japan
Prior art keywords: field effect; type; electrode; effect transistor; type field
Prior art date: 2001-11-13
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Pending

Application number

JP2001347370A

Other languages

English (en)

Japanese (ja)

Inventor

Koji Arai

浩二新居

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Mitsubishi Electric Corp

Original Assignee

Mitsubishi Electric Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2001-11-13

Filing date

2001-11-13

Publication date

2003-05-23

2001-11-13 Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp

2001-11-13 Priority to JP2001347370A priority Critical patent/JP2003152111A/ja

2002-04-29 Priority to TW091108874A priority patent/TW541685B/zh

2002-05-09 Priority to US10/141,139 priority patent/US6590802B2/en

2002-07-12 Priority to DE10231677A priority patent/DE10231677A1/de

2002-07-13 Priority to KR10-2002-0040948A priority patent/KR100438243B1/ko

2002-07-15 Priority to CN02126204A priority patent/CN1419293A/zh

2003-05-23 Publication of JP2003152111A publication Critical patent/JP2003152111A/ja

Status Pending legal-status Critical Current

Links

239000004065 semiconductor Substances 0.000 title claims abstract description 66
238000003860 storage Methods 0.000 title claims abstract description 34
230000005669 field effect Effects 0.000 claims description 104
229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 82
229920005591 polysilicon Polymers 0.000 claims description 81
239000000758 substrate Substances 0.000 claims description 12
230000000694 effects Effects 0.000 claims description 10
230000015572 biosynthetic process Effects 0.000 claims description 9
230000005684 electric field Effects 0.000 claims description 3
238000004904 shortening Methods 0.000 abstract description 2
101001070329 Geobacillus stearothermophilus 50S ribosomal protein L18 Proteins 0.000 abstract 1
238000009792 diffusion process Methods 0.000 description 113
229910052782 aluminium Inorganic materials 0.000 description 49
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 49
238000010586 diagram Methods 0.000 description 36
229910052751 metal Inorganic materials 0.000 description 26
239000002184 metal Substances 0.000 description 26
101000575029 Bacillus subtilis (strain 168) 50S ribosomal protein L11 Proteins 0.000 description 14
102100035793 CD83 antigen Human genes 0.000 description 14
101000946856 Homo sapiens CD83 antigen Proteins 0.000 description 14
101710114762 50S ribosomal protein L11, chloroplastic Proteins 0.000 description 8
101710156159 50S ribosomal protein L21, chloroplastic Proteins 0.000 description 7
230000010354 integration Effects 0.000 description 7
238000000926 separation method Methods 0.000 description 7
101100378758 Anemone leveillei AL21 gene Proteins 0.000 description 6
101000954570 Mus musculus V-type proton ATPase 16 kDa proteolipid subunit c Proteins 0.000 description 4
238000000034 method Methods 0.000 description 3
230000009467 reduction Effects 0.000 description 3
239000002699 waste material Substances 0.000 description 3
239000012535 impurity Substances 0.000 description 2
230000008569 process Effects 0.000 description 2
238000005452 bending Methods 0.000 description 1
230000008859 change Effects 0.000 description 1
238000010276 construction Methods 0.000 description 1
230000003111 delayed effect Effects 0.000 description 1
230000005611 electricity Effects 0.000 description 1
230000006870 function Effects 0.000 description 1
230000006872 improvement Effects 0.000 description 1
230000014759 maintenance of location Effects 0.000 description 1
238000004519 manufacturing process Methods 0.000 description 1
239000011159 matrix material Substances 0.000 description 1
230000003068 static effect Effects 0.000 description 1
239000000126 substance Substances 0.000 description 1

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Computer Hardware Design (AREA)
Semiconductor Memories (AREA)
Static Random-Access Memory (AREA)

JP2001347370A 2001-11-13 2001-11-13 半導体記憶装置 Pending JP2003152111A (ja)

Priority Applications (6)

Application Number	Priority Date	Filing Date	Title
JP2001347370A JP2003152111A (ja)	2001-11-13	2001-11-13	半導体記憶装置
TW091108874A TW541685B (en)	2001-11-13	2002-04-29	Semiconductor storage apparatus
US10/141,139 US6590802B2 (en)	2001-11-13	2002-05-09	Semiconductor storage apparatus
DE10231677A DE10231677A1 (de)	2001-11-13	2002-07-12	Halbleiterspeichervorrichtung
KR10-2002-0040948A KR100438243B1 (ko)	2001-11-13	2002-07-13	반도체 기억 장치
CN02126204A CN1419293A (zh)	2001-11-13	2002-07-15	半导体存储装置

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP2001347370A JP2003152111A (ja)	2001-11-13	2001-11-13	半導体記憶装置

Publications (1)

Publication Number	Publication Date
JP2003152111A true JP2003152111A (ja)	2003-05-23

Family

ID=19160384

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP2001347370A Pending JP2003152111A (ja)	2001-11-13	2001-11-13	半導体記憶装置

Country Status (6)

Country	Link
US (1)	US6590802B2 (de)
JP (1)	JP2003152111A (de)
KR (1)	KR100438243B1 (de)
CN (1)	CN1419293A (de)
DE (1)	DE10231677A1 (de)
TW (1)	TW541685B (de)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2006099937A (ja) *	2004-08-30	2006-04-13	Renesas Technology Corp	半導体装置
JP2006196841A (ja) *	2005-01-17	2006-07-27	Toshiba Corp	半導体集積回路装置
JP2008234794A (ja) *	2007-03-23	2008-10-02	Nippon Telegr & Teleph Corp <Ntt>	メモリセル
JP2011205101A (ja) *	2010-03-24	2011-10-13	Samsung Electronics Co Ltd	半導体メモリ装置及びその製造方法

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP4623885B2 (ja) *	2001-08-16	2011-02-02	ルネサスエレクトロニクス株式会社	半導体記憶装置
KR100468780B1 (ko) *	2002-12-18	2005-01-29	삼성전자주식회사	더블 포트 반도체 메모리 장치
JP4416428B2 (ja) *	2003-04-30	2010-02-17	株式会社ルネサステクノロジ	半導体記憶装置
US20050253287A1 (en) *	2004-05-11	2005-11-17	Taiwan Semiconductor Manufacturing Co., Ltd.	Dual-port SRAM cell structure
CN1893084A (zh) *	2005-07-07	2007-01-10	松下电器产业株式会社	半导体装置
US7269056B1 (en) *	2006-04-27	2007-09-11	Taiwan Semiconductor Manufacturing Company, Ltd.	Power grid design for split-word line style memory cell
US7525868B2 (en) *	2006-11-29	2009-04-28	Taiwan Semiconductor Manufacturing Co., Ltd.	Multiple-port SRAM device
JP2009020959A (ja) *	2007-07-12	2009-01-29	Panasonic Corp	半導体記憶装置
US7808812B2 (en) *	2008-09-26	2010-10-05	Taiwan Semiconductor Manufacturing Co., Ltd.	Robust 8T SRAM cell
US7852661B2 (en) *	2008-10-22	2010-12-14	Taiwan Semiconductor Manufacturing Company, Ltd.	Write-assist SRAM cell
US9006827B2 (en)	2011-11-09	2015-04-14	International Business Machines Corporation	Radiation hardened memory cell and design structures
CN103325788B (zh) *	2013-06-18	2016-03-23	中国科学院上海微***与信息技术研究所	一种八晶体管静态随机存储器单元
US10008257B2 (en) *	2015-11-20	2018-06-26	Oracle International Corporation	Memory bitcell with column select
US9928899B2 (en)	2015-12-29	2018-03-27	Taiwan Semiconductor Manufacturing Co., Ltd.	Flying and twisted bit line architecture for dual-port static random-access memory (DP SRAM)
US10074605B2 (en)	2016-06-30	2018-09-11	Taiwan Semiconductor Manufacturing Co., Ltd.	Memory cell and array structure having a plurality of bit lines
US10461086B2 (en)	2016-10-31	2019-10-29	Taiwan Semiconductor Manufacturing Co., Ltd.	Memory cell structure
CN109545251B (zh) *	2017-09-22	2021-01-05	联华电子股份有限公司	由静态随机存取存储器组成的存储器元件的布局图案
CN110010169B (zh) *	2018-01-04	2022-03-29	联华电子股份有限公司	双端口静态随机存取存储器单元
JP2023045647A (ja)	2021-09-22	2023-04-03	キオクシア株式会社	半導体記憶装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5338963A (en)	1993-04-05	1994-08-16	International Business Machines Corporation	Soft error immune CMOS static RAM cell
US5754468A (en) *	1996-06-26	1998-05-19	Simon Fraser University	Compact multiport static random access memory cell
KR100230426B1 (ko) *	1996-06-29	1999-11-15	윤종용	집적도가 향상된 스태틱 랜덤 억세스 메모리장치
JP3523762B2 (ja)	1996-12-19	2004-04-26	株式会社東芝	半導体記憶装置
JP3036588B2 (ja) *	1997-02-03	2000-04-24	日本電気株式会社	半導体記憶装置
JPH117751A (ja) *	1997-06-18	1999-01-12	Oputoromu:Kk	ドライブ一体型ディスク
US5877976A (en) *	1997-10-28	1999-03-02	International Business Machines Corporation	Memory system having a vertical bitline topology and method therefor
KR100502672B1 (ko) *	1998-04-21	2005-10-05	주식회사 하이닉스반도체	풀 씨모스 에스램 셀
JP2000031300A (ja) *	1998-07-09	2000-01-28	Fujitsu Ltd	スタティック型半導体記憶装置
JP4565700B2 (ja)	1999-05-12	2010-10-20	ルネサスエレクトロニクス株式会社	半導体装置
JP4885365B2 (ja) *	2000-05-16	2012-02-29	ルネサスエレクトロニクス株式会社	半導体装置

2001
- 2001-11-13 JP JP2001347370A patent/JP2003152111A/ja active Pending
2002
- 2002-04-29 TW TW091108874A patent/TW541685B/zh not_active IP Right Cessation
- 2002-05-09 US US10/141,139 patent/US6590802B2/en not_active Expired - Fee Related
- 2002-07-12 DE DE10231677A patent/DE10231677A1/de not_active Withdrawn
- 2002-07-13 KR KR10-2002-0040948A patent/KR100438243B1/ko not_active IP Right Cessation
- 2002-07-15 CN CN02126204A patent/CN1419293A/zh active Pending

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2006099937A (ja) *	2004-08-30	2006-04-13	Renesas Technology Corp	半導体装置
JP2006196841A (ja) *	2005-01-17	2006-07-27	Toshiba Corp	半導体集積回路装置
JP2008234794A (ja) *	2007-03-23	2008-10-02	Nippon Telegr & Teleph Corp <Ntt>	メモリセル
JP2011205101A (ja) *	2010-03-24	2011-10-13	Samsung Electronics Co Ltd	半導体メモリ装置及びその製造方法

Also Published As

Publication number	Publication date
KR100438243B1 (ko)	2004-07-02
CN1419293A (zh)	2003-05-21
TW541685B (en)	2003-07-11
DE10231677A1 (de)	2003-05-28
US20030090929A1 (en)	2003-05-15
KR20030040011A (ko)	2003-05-22
US6590802B2 (en)	2003-07-08

Publication	Publication Date	Title
KR100419687B1 (ko)	2004-02-21	반도체 기억 장치
KR100438243B1 (ko)	2004-07-02	반도체 기억 장치
JP5596335B2 (ja)	2014-09-24	半導体装置
JP3523762B2 (ja)	2004-04-26	半導体記憶装置
US6822300B2 (en)	2004-11-23	Semiconductor memory device
KR100522631B1 (ko)	2005-10-20	반도체 기억장치
US7330392B2 (en)	2008-02-12	Dual port semiconductor memory device
JP2004335535A (ja)	2004-11-25	半導体記憶装置
JP4744751B2 (ja)	2011-08-10	半導体装置
KR20040054361A (ko)	2004-06-25	더블 포트 반도체 메모리 장치
US20230335184A1 (en)	2023-10-19	Sram devices with reduced coupling capacitance
JP6096271B2 (ja)	2017-03-15	半導体装置

JP2003152111A - 半導体記憶装置 - Google Patents

Info

Links

Classifications

Landscapes

Priority Applications (6)

Applications Claiming Priority (1)

Publications (1)

Family

ID=19160384

Family Applications (1)

Country Status (6)

Cited By (4)

Families Citing this family (19)

Family Cites Families (11)

Cited By (4)

Also Published As

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