IT1245794B - Dispositivo semiconduttore molto affidabile - Google Patents

Dispositivo semiconduttore molto affidabile

Info

Publication number
IT1245794B
IT1245794B ITMI910091A ITMI910091A IT1245794B IT 1245794 B IT1245794 B IT 1245794B IT MI910091 A ITMI910091 A IT MI910091A IT MI910091 A ITMI910091 A IT MI910091A IT 1245794 B IT1245794 B IT 1245794B
Authority
IT
Italy
Prior art keywords
semiconductor device
junction
region
doping
reliable semiconductor
Prior art date
Application number
ITMI910091A
Other languages
English (en)
Italian (it)
Inventor
Sin Yun-Seung
Kang Jun
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of ITMI910091A0 publication Critical patent/ITMI910091A0/it
Publication of ITMI910091A1 publication Critical patent/ITMI910091A1/it
Application granted granted Critical
Publication of IT1245794B publication Critical patent/IT1245794B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
ITMI910091A 1990-09-05 1991-01-16 Dispositivo semiconduttore molto affidabile IT1245794B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900014002A KR920007171A (ko) 1990-09-05 1990-09-05 고신뢰성 반도체장치

Publications (3)

Publication Number Publication Date
ITMI910091A0 ITMI910091A0 (it) 1991-01-16
ITMI910091A1 ITMI910091A1 (it) 1992-07-16
IT1245794B true IT1245794B (it) 1994-10-18

Family

ID=19303260

Family Applications (1)

Application Number Title Priority Date Filing Date
ITMI910091A IT1245794B (it) 1990-09-05 1991-01-16 Dispositivo semiconduttore molto affidabile

Country Status (6)

Country Link
JP (1) JPH04234162A (ja)
KR (1) KR920007171A (ja)
DE (1) DE4101274A1 (ja)
FR (1) FR2666454A1 (ja)
GB (1) GB2247779A (ja)
IT (1) IT1245794B (ja)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3456242B2 (ja) * 1993-01-07 2003-10-14 セイコーエプソン株式会社 半導体装置及びその製造方法
DE69429018T2 (de) * 1993-01-12 2002-06-13 Sony Corp Ausgangsschaltung für Ladungsübertragungselement
KR0166101B1 (ko) * 1993-10-21 1999-01-15 김주용 정전방전 보호회로의 트랜지스터 및 그 제조방법
FR2713398B1 (fr) * 1993-11-30 1996-01-19 Sgs Thomson Microelectronics Fusible pour circuit intégré.
US5932917A (en) * 1996-04-19 1999-08-03 Nippon Steel Corporation Input protective circuit having a diffusion resistance layer
JPH1070266A (ja) * 1996-08-26 1998-03-10 Nec Corp 半導体装置およびその製造方法
DE19840239A1 (de) * 1998-09-03 2000-03-09 Siemens Ag Leistungshalbleiter-Bauelement mit einer Anordnung zum Schutz vor Schäden durch elektrostatische Entladungen
DE102004012819B4 (de) 2004-03-16 2006-02-23 Infineon Technologies Ag Leistungshalbleiterbauelement mit erhöhter Robustheit

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1073560A (en) * 1964-12-28 1967-06-28 Gen Electric Improvements in semiconductor devices
DE1803392A1 (de) * 1968-10-16 1970-06-18 Siemens Ag Schutzvorrichtung fuer einen Feldeffekttransistor
JPS57211272A (en) * 1981-06-23 1982-12-25 Toshiba Corp Semiconductor device
JPS5825264A (ja) * 1981-08-07 1983-02-15 Hitachi Ltd 絶縁ゲート型半導体装置
JPS6134967A (ja) * 1984-05-03 1986-02-19 デイジタル　イクイプメント　コ−ポレ−シヨン Ｖｌｓｉ集積回路装置用の入力保護構成体
US4734752A (en) * 1985-09-27 1988-03-29 Advanced Micro Devices, Inc. Electrostatic discharge protection device for CMOS integrated circuit outputs

Also Published As

Publication number Publication date
DE4101274A1 (de) 1992-03-19
KR920007171A (ko) 1992-04-28
GB9100619D0 (en) 1991-02-27
ITMI910091A0 (it) 1991-01-16
GB2247779A (en) 1992-03-11
FR2666454A1 (fr) 1992-03-06
ITMI910091A1 (it) 1992-07-16
JPH04234162A (ja) 1992-08-21

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Legal Events

Date Code Title Description
0001 Granted
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19971028