GB2247779A - Semiconductor device tolerant of electrostatic discharge - Google Patents

Semiconductor device tolerant of electrostatic discharge Download PDF

Info

Publication number: GB2247779A
Authority: GB; United Kingdom
Prior art keywords: semiconductor device; conductive type; junction region; type; substrate
Prior art date: 1990-09-05
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Withdrawn

Application number

GB9100619A

Other languages

English (en)

Other versions

GB9100619D0 (en

Inventor

Yun-Seung Sin

Jun Kang

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Samsung Electronics Co Ltd

Original Assignee

Samsung Electronics Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1990-09-05

Filing date

1991-01-11

Publication date

1992-03-11

1991-01-11 Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd

1991-02-27 Publication of GB9100619D0 publication Critical patent/GB9100619D0/en

1992-03-11 Publication of GB2247779A publication Critical patent/GB2247779A/en

Status Withdrawn legal-status Critical Current

Links

239000004065 semiconductor Substances 0.000 title claims abstract description 58
239000000758 substrate Substances 0.000 claims abstract description 36
238000000034 method Methods 0.000 claims description 22
230000015556 catabolic process Effects 0.000 claims description 11
229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 9
239000010936 titanium Substances 0.000 claims description 9
230000005611 electricity Effects 0.000 claims description 8
239000003870 refractory metal Substances 0.000 claims description 8
229910052710 silicon Inorganic materials 0.000 claims description 8
239000010703 silicon Substances 0.000 claims description 8
230000003068 static effect Effects 0.000 claims description 8
229910052719 titanium Inorganic materials 0.000 claims description 6
RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
229910052782 aluminium Inorganic materials 0.000 claims description 4
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
230000015572 biosynthetic process Effects 0.000 claims description 4
229910052750 molybdenum Inorganic materials 0.000 claims description 4
229910052715 tantalum Inorganic materials 0.000 claims description 4
229910052721 tungsten Inorganic materials 0.000 claims description 4
ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
239000010941 cobalt Substances 0.000 claims description 3
229910017052 cobalt Inorganic materials 0.000 claims description 3
GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 3
239000011733 molybdenum Substances 0.000 claims description 3
229910021332 silicide Inorganic materials 0.000 claims description 3
FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 3
GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
239000010937 tungsten Substances 0.000 claims description 3
239000010949 copper Substances 0.000 claims description 2
RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
239000004411 aluminium Substances 0.000 claims 1
239000002131 composite material Substances 0.000 claims 1
229910052802 copper Inorganic materials 0.000 claims 1
238000012421 spiking Methods 0.000 abstract description 5
150000004767 nitrides Chemical class 0.000 description 12
229910052751 metal Inorganic materials 0.000 description 10
239000002184 metal Substances 0.000 description 10
229920002120 photoresistant polymer Polymers 0.000 description 8
-1 boron ion Chemical class 0.000 description 7
239000003990 capacitor Substances 0.000 description 7
239000012535 impurity Substances 0.000 description 7
238000004519 manufacturing process Methods 0.000 description 7
238000012360 testing method Methods 0.000 description 7
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
229910052796 boron Inorganic materials 0.000 description 4
238000007599 discharging Methods 0.000 description 4
238000012856 packing Methods 0.000 description 4
229910052698 phosphorus Inorganic materials 0.000 description 4
239000011574 phosphorus Substances 0.000 description 4
238000001259 photo etching Methods 0.000 description 4
238000005468 ion implantation Methods 0.000 description 3
230000008018 melting Effects 0.000 description 3
238000002844 melting Methods 0.000 description 3
VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
229910007277 Si3 N4 Inorganic materials 0.000 description 2
238000006243 chemical reaction Methods 0.000 description 2
229910052681 coesite Inorganic materials 0.000 description 2
238000007796 conventional method Methods 0.000 description 2
229910052906 cristobalite Inorganic materials 0.000 description 2
238000000151 deposition Methods 0.000 description 2
238000013461 design Methods 0.000 description 2
238000010586 diagram Methods 0.000 description 2
150000002500 ions Chemical class 0.000 description 2
229910052682 stishovite Inorganic materials 0.000 description 2
229910052905 tridymite Inorganic materials 0.000 description 2
108091006146 Channels Proteins 0.000 description 1
108010075750 P-Type Calcium Channels Proteins 0.000 description 1
OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
230000004913 activation Effects 0.000 description 1
238000000137 annealing Methods 0.000 description 1
HAYXDMNJJFVXCI-UHFFFAOYSA-N arsenic(5+) Chemical compound [As+5] HAYXDMNJJFVXCI-UHFFFAOYSA-N 0.000 description 1
238000005229 chemical vapour deposition Methods 0.000 description 1
239000013078 crystal Substances 0.000 description 1
230000006866 deterioration Effects 0.000 description 1
230000002542 deteriorative effect Effects 0.000 description 1
230000000694 effects Effects 0.000 description 1
238000005265 energy consumption Methods 0.000 description 1
239000011521 glass Substances 0.000 description 1
239000007943 implant Substances 0.000 description 1
239000000463 material Substances 0.000 description 1
230000003647 oxidation Effects 0.000 description 1
238000007254 oxidation reaction Methods 0.000 description 1
238000000059 patterning Methods 0.000 description 1
238000000206 photolithography Methods 0.000 description 1
239000004033 plastic Substances 0.000 description 1
229920003023 plastic Polymers 0.000 description 1
238000001556 precipitation Methods 0.000 description 1
230000001681 protective effect Effects 0.000 description 1
239000000377 silicon dioxide Substances 0.000 description 1
235000012239 silicon dioxide Nutrition 0.000 description 1
238000001039 wet etching Methods 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

Engineering & Computer Science (AREA)
Power Engineering (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Semiconductor Integrated Circuits (AREA)

GB9100619A 1990-09-05 1991-01-11 Semiconductor device tolerant of electrostatic discharge Withdrawn GB2247779A (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
KR1019900014002A KR920007171A (ko)	1990-09-05	1990-09-05	고신뢰성 반도체장치

Publications (2)

Publication Number	Publication Date
GB9100619D0 GB9100619D0 (en)	1991-02-27
GB2247779A true GB2247779A (en)	1992-03-11

Family

ID=19303260

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
GB9100619A Withdrawn GB2247779A (en)	1990-09-05	1991-01-11	Semiconductor device tolerant of electrostatic discharge

Country Status (6)

Country	Link
JP (1)	JPH04234162A (ja)
KR (1)	KR920007171A (ja)
DE (1)	DE4101274A1 (ja)
FR (1)	FR2666454A1 (ja)
GB (1)	GB2247779A (ja)
IT (1)	IT1245794B (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
GB2274203A (en) *	1993-01-07	1994-07-13	Seiko Epson Corp	Semiconductor device protection
EP0609658A2 (en) *	1993-01-12	1994-08-10	Sony Corporation	Output circuit device for charge transfer element
EP0655783A1 (fr) *	1993-11-30	1995-05-31	STMicroelectronics S.A.	Fusible pour circuit intégré
US5907174A (en) *	1993-10-21	1999-05-25	Hyundai Electronics Industries Co., Ltd.	Electrostatic discharge protecting transistor
US5932917A (en) *	1996-04-19	1999-08-03	Nippon Steel Corporation	Input protective circuit having a diffusion resistance layer
US7304349B2 (en)	2004-03-16	2007-12-04	Infineon Technologies Ag	Power semiconductor component with increased robustness

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH1070266A (ja) *	1996-08-26	1998-03-10	Nec Corp	半導体装置およびその製造方法
DE19840239A1 (de) *	1998-09-03	2000-03-09	Siemens Ag	Leistungshalbleiter-Bauelement mit einer Anordnung zum Schutz vor Schäden durch elektrostatische Entladungen

Citations (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
GB1073560A (en) *	1964-12-28	1967-06-28	Gen Electric	Improvements in semiconductor devices
GB1229385A (ja) *	1968-10-16	1971-04-21
GB2103877A (en) *	1981-08-07	1983-02-23	Hitachi Ltd	Gate protection for insulated gate semiconductor devices
US4509067A (en) *	1981-06-23	1985-04-02	Tokyo Shibaura Denki Kabushiki Kaisha	Semiconductor integrated circuit devices with protective means against overvoltages
EP0217525A1 (en) *	1985-09-27	1987-04-08	Advanced Micro Devices, Inc.	Electrostatic discharge protection devices for integrated circuits

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS6134967A (ja) *	1984-05-03	1986-02-19	デイジタル　イクイプメント　コ−ポレ−シヨン	Ｖｌｓｉ集積回路装置用の入力保護構成体

1990
- 1990-09-05 KR KR1019900014002A patent/KR920007171A/ko not_active Application Discontinuation
1991
- 1991-01-11 GB GB9100619A patent/GB2247779A/en not_active Withdrawn
- 1991-01-16 IT ITMI910091A patent/IT1245794B/it active IP Right Grant
- 1991-01-17 JP JP3004039A patent/JPH04234162A/ja active Pending
- 1991-01-17 DE DE4101274A patent/DE4101274A1/de not_active Ceased
- 1991-01-21 FR FR9100620A patent/FR2666454A1/fr not_active Withdrawn

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
GB1073560A (en) *	1964-12-28	1967-06-28	Gen Electric	Improvements in semiconductor devices
GB1229385A (ja) *	1968-10-16	1971-04-21
US4509067A (en) *	1981-06-23	1985-04-02	Tokyo Shibaura Denki Kabushiki Kaisha	Semiconductor integrated circuit devices with protective means against overvoltages
GB2103877A (en) *	1981-08-07	1983-02-23	Hitachi Ltd	Gate protection for insulated gate semiconductor devices
EP0217525A1 (en) *	1985-09-27	1987-04-08	Advanced Micro Devices, Inc.	Electrostatic discharge protection devices for integrated circuits

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
GB2274203A (en) *	1993-01-07	1994-07-13	Seiko Epson Corp	Semiconductor device protection
US5614752A (en) *	1993-01-07	1997-03-25	Seiko Epson Corporation	Semiconductor device containing external surge protection component
GB2274203B (en) *	1993-01-07	1996-08-07	Seiko Epson Corp	Semiconductor device
US5498887A (en) *	1993-01-12	1996-03-12	Sony Corporation	Output circuit device for a charge transfer element having tripartite diffusion layer
US5432364A (en) *	1993-01-12	1995-07-11	Sony Corporation	Output circuit device for charge transfer element
EP0609658A3 (en) *	1993-01-12	1994-11-09	Sony Corp	Output circuit for charge transfer element.
US5569616A (en) *	1993-01-12	1996-10-29	Sony Corporation	Process for forming an output circuit device for a charge transfer element having tripartite diffusion layer
EP0609658A2 (en) *	1993-01-12	1994-08-10	Sony Corporation	Output circuit device for charge transfer element
US5907174A (en) *	1993-10-21	1999-05-25	Hyundai Electronics Industries Co., Ltd.	Electrostatic discharge protecting transistor
FR2713398A1 (fr) *	1993-11-30	1995-06-09	Sgs Thomson Microelectronics	Fusible pour circuit intégré.
EP0655783A1 (fr) *	1993-11-30	1995-05-31	STMicroelectronics S.A.	Fusible pour circuit intégré
US5665627A (en) *	1993-11-30	1997-09-09	Sgs Thomson Microelectronics S.A.	Method of irreversibly locking a portion of a semiconductor device
US5969403A (en) *	1993-11-30	1999-10-19	Sgs-Thomson Microelectronics S.A.	Physical fuse for semiconductor integrated circuit
US5932917A (en) *	1996-04-19	1999-08-03	Nippon Steel Corporation	Input protective circuit having a diffusion resistance layer
US7304349B2 (en)	2004-03-16	2007-12-04	Infineon Technologies Ag	Power semiconductor component with increased robustness

Also Published As

Publication number	Publication date
IT1245794B (it)	1994-10-18
DE4101274A1 (de)	1992-03-19
KR920007171A (ko)	1992-04-28
GB9100619D0 (en)	1991-02-27
ITMI910091A0 (it)	1991-01-16
FR2666454A1 (fr)	1992-03-06
ITMI910091A1 (it)	1992-07-16
JPH04234162A (ja)	1992-08-21

Legal Events

Date	Code	Title	Description
1995-06-21	WAP	Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)

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US6524893B2 (en)	2003-02-25	Electrostatic discharge protection device for semiconductor integrated circuit, method for producing the same, and electrostatic discharge protection circuit using the same
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US6410964B1 (en)	2002-06-25	Semiconductor device capable of preventing gate oxide film from damage by plasma process and method of manufacturing the same
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US5646062A (en)	1997-07-08	Method for ESD protection circuit with deep source diffusion
US5348907A (en)	1994-09-20	Method of fabricating of semiconductor device by forming two electrically insulated wells of the same type electroconductivity on semiconductor substrate