DE4101274A1 - Halbleiterbauelement hoher zuverlaessigkeit - Google Patents
Halbleiterbauelement hoher zuverlaessigkeitInfo
- Publication number
- DE4101274A1 DE4101274A1 DE4101274A DE4101274A DE4101274A1 DE 4101274 A1 DE4101274 A1 DE 4101274A1 DE 4101274 A DE4101274 A DE 4101274A DE 4101274 A DE4101274 A DE 4101274A DE 4101274 A1 DE4101274 A1 DE 4101274A1
- Authority
- DE
- Germany
- Prior art keywords
- conductivity type
- semiconductor
- transition
- type
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 239000004065 semiconductor Substances 0.000 title claims description 49
- 230000007704 transition Effects 0.000 claims description 44
- 239000000758 substrate Substances 0.000 claims description 27
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 238000002844 melting Methods 0.000 claims description 10
- 230000005611 electricity Effects 0.000 claims description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 7
- 230000003068 static effect Effects 0.000 claims description 7
- 239000010936 titanium Substances 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 238000009413 insulation Methods 0.000 claims description 5
- 230000008018 melting Effects 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000010941 cobalt Substances 0.000 claims description 3
- 229910017052 cobalt Inorganic materials 0.000 claims description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229910021332 silicide Inorganic materials 0.000 claims description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- 101100346656 Drosophila melanogaster strat gene Proteins 0.000 claims 1
- 239000000654 additive Substances 0.000 claims 1
- 238000000034 method Methods 0.000 description 18
- 239000003990 capacitor Substances 0.000 description 15
- 230000008569 process Effects 0.000 description 10
- 150000004767 nitrides Chemical class 0.000 description 9
- -1 boron ions Chemical class 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000012360 testing method Methods 0.000 description 7
- 230000015556 catabolic process Effects 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 238000012856 packing Methods 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- VRZFDJOWKAFVOO-UHFFFAOYSA-N [O-][Si]([O-])([O-])O.[B+3].P Chemical compound [O-][Si]([O-])([O-])O.[B+3].P VRZFDJOWKAFVOO-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 230000036039 immunity Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 238000005496 tempering Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019900014002A KR920007171A (ko) | 1990-09-05 | 1990-09-05 | 고신뢰성 반도체장치 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE4101274A1 true DE4101274A1 (de) | 1992-03-19 |
Family
ID=19303260
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE4101274A Ceased DE4101274A1 (de) | 1990-09-05 | 1991-01-17 | Halbleiterbauelement hoher zuverlaessigkeit |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPH04234162A (ja) |
| KR (1) | KR920007171A (ja) |
| DE (1) | DE4101274A1 (ja) |
| FR (1) | FR2666454A1 (ja) |
| GB (1) | GB2247779A (ja) |
| IT (1) | IT1245794B (ja) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19840239A1 (de) * | 1998-09-03 | 2000-03-09 | Siemens Ag | Leistungshalbleiter-Bauelement mit einer Anordnung zum Schutz vor Schäden durch elektrostatische Entladungen |
| US7304349B2 (en) | 2004-03-16 | 2007-12-04 | Infineon Technologies Ag | Power semiconductor component with increased robustness |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3456242B2 (ja) * | 1993-01-07 | 2003-10-14 | セイコーエプソン株式会社 | 半導体装置及びその製造方法 |
| DE69429018T2 (de) * | 1993-01-12 | 2002-06-13 | Sony Corp | Ausgangsschaltung für Ladungsübertragungselement |
| KR0166101B1 (ko) * | 1993-10-21 | 1999-01-15 | 김주용 | 정전방전 보호회로의 트랜지스터 및 그 제조방법 |
| FR2713398B1 (fr) * | 1993-11-30 | 1996-01-19 | Sgs Thomson Microelectronics | Fusible pour circuit intégré. |
| US5932917A (en) * | 1996-04-19 | 1999-08-03 | Nippon Steel Corporation | Input protective circuit having a diffusion resistance layer |
| JPH1070266A (ja) * | 1996-08-26 | 1998-03-10 | Nec Corp | 半導体装置およびその製造方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4952994A (en) * | 1984-05-03 | 1990-08-28 | Digital Equipment Corporation | Input protection arrangement for VLSI integrated circuit devices |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1073560A (en) * | 1964-12-28 | 1967-06-28 | Gen Electric | Improvements in semiconductor devices |
| DE1803392A1 (de) * | 1968-10-16 | 1970-06-18 | Siemens Ag | Schutzvorrichtung fuer einen Feldeffekttransistor |
| JPS57211272A (en) * | 1981-06-23 | 1982-12-25 | Toshiba Corp | Semiconductor device |
| JPS5825264A (ja) * | 1981-08-07 | 1983-02-15 | Hitachi Ltd | 絶縁ゲート型半導体装置 |
| US4734752A (en) * | 1985-09-27 | 1988-03-29 | Advanced Micro Devices, Inc. | Electrostatic discharge protection device for CMOS integrated circuit outputs |
-
1990
- 1990-09-05 KR KR1019900014002A patent/KR920007171A/ko not_active Application Discontinuation
-
1991
- 1991-01-11 GB GB9100619A patent/GB2247779A/en not_active Withdrawn
- 1991-01-16 IT ITMI910091A patent/IT1245794B/it active IP Right Grant
- 1991-01-17 JP JP3004039A patent/JPH04234162A/ja active Pending
- 1991-01-17 DE DE4101274A patent/DE4101274A1/de not_active Ceased
- 1991-01-21 FR FR9100620A patent/FR2666454A1/fr not_active Withdrawn
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4952994A (en) * | 1984-05-03 | 1990-08-28 | Digital Equipment Corporation | Input protection arrangement for VLSI integrated circuit devices |
Non-Patent Citations (1)
| Title |
|---|
| BOYCET. AHLPORT, J. RONALD CRICCHI DOUGLAS A. BARTH: "C-MOS/Sos LSI Input/Output Protection Networks". In: IEEE Trans. on Electron Dev., Vol. ED-25, No. 8, August 1978, S. 933-938 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19840239A1 (de) * | 1998-09-03 | 2000-03-09 | Siemens Ag | Leistungshalbleiter-Bauelement mit einer Anordnung zum Schutz vor Schäden durch elektrostatische Entladungen |
| US7304349B2 (en) | 2004-03-16 | 2007-12-04 | Infineon Technologies Ag | Power semiconductor component with increased robustness |
Also Published As
| Publication number | Publication date |
|---|---|
| IT1245794B (it) | 1994-10-18 |
| KR920007171A (ko) | 1992-04-28 |
| GB9100619D0 (en) | 1991-02-27 |
| ITMI910091A0 (it) | 1991-01-16 |
| GB2247779A (en) | 1992-03-11 |
| FR2666454A1 (fr) | 1992-03-06 |
| ITMI910091A1 (it) | 1992-07-16 |
| JPH04234162A (ja) | 1992-08-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| 8131 | Rejection |