FR2666454A1 - Structure de jonction de contact tolerant l'endommagement electrostatique pour dispositif semi-conducteur en particulier cmos. - Google Patents

Structure de jonction de contact tolerant l'endommagement electrostatique pour dispositif semi-conducteur en particulier cmos. Download PDF

Info

Publication number: FR2666454A1
Authority: FR; France
Prior art keywords: semiconductor device; high reliability; conductive type; substrate; type
Prior art date: 1990-09-05
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Withdrawn

Application number

FR9100620A

Other languages

English (en)

French (fr)

Inventor

Yun-Seung Sin

Jun Kang

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Samsung Electronics Co Ltd

Original Assignee

Samsung Electronics Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1990-09-05

Filing date

1991-01-21

Publication date

1992-03-06

1991-01-21 Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd

1992-03-06 Publication of FR2666454A1 publication Critical patent/FR2666454A1/fr

Status Withdrawn legal-status Critical Current

Links

239000004065 semiconductor Substances 0.000 title claims abstract description 48
239000000758 substrate Substances 0.000 claims abstract description 36
229910052710 silicon Inorganic materials 0.000 claims description 10
229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 9
230000015556 catabolic process Effects 0.000 claims description 8
230000005611 electricity Effects 0.000 claims description 8
239000003870 refractory metal Substances 0.000 claims description 8
239000010703 silicon Substances 0.000 claims description 8
230000003068 static effect Effects 0.000 claims description 8
239000010936 titanium Substances 0.000 claims description 8
230000015572 biosynthetic process Effects 0.000 claims description 6
239000004020 conductor Substances 0.000 claims description 5
ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
229910052782 aluminium Inorganic materials 0.000 claims description 4
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
239000010941 cobalt Substances 0.000 claims description 4
229910017052 cobalt Inorganic materials 0.000 claims description 4
GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 4
229910052751 metal Inorganic materials 0.000 claims description 4
239000002184 metal Substances 0.000 claims description 4
229910052750 molybdenum Inorganic materials 0.000 claims description 4
239000011733 molybdenum Substances 0.000 claims description 4
229910052715 tantalum Inorganic materials 0.000 claims description 4
GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 4
229910052719 titanium Inorganic materials 0.000 claims description 4
WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
229910052721 tungsten Inorganic materials 0.000 claims description 4
239000010937 tungsten Substances 0.000 claims description 4
229910021332 silicide Inorganic materials 0.000 claims description 3
FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 3
229910052802 copper Inorganic materials 0.000 claims description 2
239000010949 copper Substances 0.000 claims description 2
RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
239000002131 composite material Substances 0.000 claims 1
150000002739 metals Chemical class 0.000 claims 1
238000000034 method Methods 0.000 description 20
239000003990 capacitor Substances 0.000 description 14
150000004767 nitrides Chemical class 0.000 description 12
239000012535 impurity Substances 0.000 description 8
229920002120 photoresistant polymer Polymers 0.000 description 8
238000004519 manufacturing process Methods 0.000 description 7
-1 phosphorus ion Chemical class 0.000 description 7
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
229910052796 boron Inorganic materials 0.000 description 4
230000010354 integration Effects 0.000 description 4
229910052698 phosphorus Inorganic materials 0.000 description 4
239000011574 phosphorus Substances 0.000 description 4
238000005229 chemical vapour deposition Methods 0.000 description 3
150000002500 ions Chemical class 0.000 description 3
108091006146 Channels Proteins 0.000 description 2
238000006243 chemical reaction Methods 0.000 description 2
238000007796 conventional method Methods 0.000 description 2
238000000151 deposition Methods 0.000 description 2
238000010586 diagram Methods 0.000 description 2
230000004927 fusion Effects 0.000 description 2
BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 2
238000005468 ion implantation Methods 0.000 description 2
ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
108010075750 P-Type Calcium Channels Proteins 0.000 description 1
NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
230000004913 activation Effects 0.000 description 1
238000000137 annealing Methods 0.000 description 1
HAYXDMNJJFVXCI-UHFFFAOYSA-N arsenic(5+) Chemical compound [As+5] HAYXDMNJJFVXCI-UHFFFAOYSA-N 0.000 description 1
230000000903 blocking effect Effects 0.000 description 1
239000005388 borosilicate glass Substances 0.000 description 1
230000003247 decreasing effect Effects 0.000 description 1
230000006866 deterioration Effects 0.000 description 1
230000002542 deteriorative effect Effects 0.000 description 1
238000009792 diffusion process Methods 0.000 description 1
230000000694 effects Effects 0.000 description 1
239000007943 implant Substances 0.000 description 1
238000002513 implantation Methods 0.000 description 1
238000009413 insulation Methods 0.000 description 1
239000000463 material Substances 0.000 description 1
230000008018 melting Effects 0.000 description 1
238000002844 melting Methods 0.000 description 1
230000003647 oxidation Effects 0.000 description 1
238000007254 oxidation reaction Methods 0.000 description 1
238000000206 photolithography Methods 0.000 description 1
239000004033 plastic Substances 0.000 description 1
229920003023 plastic Polymers 0.000 description 1
238000001556 precipitation Methods 0.000 description 1
238000001039 wet etching Methods 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

Engineering & Computer Science (AREA)
Power Engineering (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Semiconductor Integrated Circuits (AREA)

FR9100620A 1990-09-05 1991-01-21 Structure de jonction de contact tolerant l'endommagement electrostatique pour dispositif semi-conducteur en particulier cmos. Withdrawn FR2666454A1 (fr)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
KR1019900014002A KR920007171A (ko)	1990-09-05	1990-09-05	고신뢰성 반도체장치

Publications (1)

Publication Number	Publication Date
FR2666454A1 true FR2666454A1 (fr)	1992-03-06

Family

ID=19303260

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
FR9100620A Withdrawn FR2666454A1 (fr)	1990-09-05	1991-01-21	Structure de jonction de contact tolerant l'endommagement electrostatique pour dispositif semi-conducteur en particulier cmos.

Country Status (6)

Country	Link
JP (1)	JPH04234162A (ja)
KR (1)	KR920007171A (ja)
DE (1)	DE4101274A1 (ja)
FR (1)	FR2666454A1 (ja)
GB (1)	GB2247779A (ja)
IT (1)	IT1245794B (ja)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP3456242B2 (ja) *	1993-01-07	2003-10-14	セイコーエプソン株式会社	半導体装置及びその製造方法
DE69429018T2 (de) *	1993-01-12	2002-06-13	Sony Corp	Ausgangsschaltung für Ladungsübertragungselement
KR0166101B1 (ko) *	1993-10-21	1999-01-15	김주용	정전방전 보호회로의 트랜지스터 및 그 제조방법
FR2713398B1 (fr) *	1993-11-30	1996-01-19	Sgs Thomson Microelectronics	Fusible pour circuit intégré.
US5932917A (en) *	1996-04-19	1999-08-03	Nippon Steel Corporation	Input protective circuit having a diffusion resistance layer
JPH1070266A (ja) *	1996-08-26	1998-03-10	Nec Corp	半導体装置およびその製造方法
DE19840239A1 (de) *	1998-09-03	2000-03-09	Siemens Ag	Leistungshalbleiter-Bauelement mit einer Anordnung zum Schutz vor Schäden durch elektrostatische Entladungen
DE102004012819B4 (de)	2004-03-16	2006-02-23	Infineon Technologies Ag	Leistungshalbleiterbauelement mit erhöhter Robustheit

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
GB1073560A (en) *	1964-12-28	1967-06-28	Gen Electric	Improvements in semiconductor devices
DE1803392A1 (de) *	1968-10-16	1970-06-18	Siemens Ag	Schutzvorrichtung fuer einen Feldeffekttransistor
JPS57211272A (en) *	1981-06-23	1982-12-25	Toshiba Corp	Semiconductor device
JPS5825264A (ja) *	1981-08-07	1983-02-15	Hitachi Ltd	絶縁ゲート型半導体装置
JPS6134967A (ja) *	1984-05-03	1986-02-19	デイジタル　イクイプメント　コ−ポレ−シヨン	Ｖｌｓｉ集積回路装置用の入力保護構成体
US4734752A (en) *	1985-09-27	1988-03-29	Advanced Micro Devices, Inc.	Electrostatic discharge protection device for CMOS integrated circuit outputs

1990
- 1990-09-05 KR KR1019900014002A patent/KR920007171A/ko not_active Application Discontinuation
1991
- 1991-01-11 GB GB9100619A patent/GB2247779A/en not_active Withdrawn
- 1991-01-16 IT ITMI910091A patent/IT1245794B/it active IP Right Grant
- 1991-01-17 JP JP3004039A patent/JPH04234162A/ja active Pending
- 1991-01-17 DE DE4101274A patent/DE4101274A1/de not_active Ceased
- 1991-01-21 FR FR9100620A patent/FR2666454A1/fr not_active Withdrawn

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
24TH ANNUAL PROCEEDINGS OF IEEE RELIABILITY PHYSICS SYMPOSIUM, Anaheim, CA, 1-3 avril 1986, pages 206-214; L.F. DeCHIARO et al.: "Input ESD protection networks for fineline NMOS - effects of stressing waveform and circuit layout" *
25TH ANNUAL PROCEEDINGS OF IEEE RELIABILITY PHYSICS SYMPOSIUM, San Diego, CA, 7-9 avril 1987, pages 174-180; C. DUVVURY et al.: "ESD phenomena and protection issues in CMOS output buffers" *
ELECTRICAL OVERSTRESS/ELECTROSTATIC DISCHARGE SYMPOSIUM PROCEEDINGS, Philadelphia, PA, 1984, pages 202-209; C.M. LIN et al.: "A CMOS VLSI ESD input protection device, DIFIDW" *

Also Published As

Publication number	Publication date
IT1245794B (it)	1994-10-18
DE4101274A1 (de)	1992-03-19
KR920007171A (ko)	1992-04-28
GB9100619D0 (en)	1991-02-27
ITMI910091A0 (it)	1991-01-16
GB2247779A (en)	1992-03-11
ITMI910091A1 (it)	1992-07-16
JPH04234162A (ja)	1992-08-21

Legal Events

Date	Code	Title	Description
1994-11-25	ST	Notification of lapse

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