HK1243226B - 曝光裝置、曝光方法以及器件製造方法 - Google Patents

曝光裝置、曝光方法以及器件製造方法

Info

Publication number
HK1243226B
HK1243226B HK18102618.8A HK18102618A HK1243226B HK 1243226 B HK1243226 B HK 1243226B HK 18102618 A HK18102618 A HK 18102618A HK 1243226 B HK1243226 B HK 1243226B
Authority
HK
Hong Kong
Prior art keywords
exposure
device manufacturing
exposure apparatus
exposure method
manufacturing
Prior art date
Application number
HK18102618.8A
Other languages
English (en)
Inventor
Hiroyuki Nagasaka
Kenichi Shiraishi
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of HK1243226B publication Critical patent/HK1243226B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning

Landscapes

  • Physics & Mathematics (AREA)
  • Public Health (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Environmental & Geological Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
HK18102618.8A 2004-06-21 2018-02-23 曝光裝置、曝光方法以及器件製造方法 HK1243226B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004182343 2004-06-21
JP2004237343 2004-08-17
JP2004327787 2004-11-11

Publications (1)

Publication Number Publication Date
HK1243226B true HK1243226B (zh) 2019-08-23

Family

ID=35509987

Family Applications (1)

Application Number Title Priority Date Filing Date
HK18102618.8A HK1243226B (zh) 2004-06-21 2018-02-23 曝光裝置、曝光方法以及器件製造方法

Country Status (6)

Country Link
US (3) US20090225286A1 (zh)
EP (5) EP1783822A4 (zh)
JP (3) JP5353856B2 (zh)
KR (3) KR101245070B1 (zh)
HK (1) HK1243226B (zh)
WO (1) WO2005124833A1 (zh)

Families Citing this family (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101245070B1 (ko) * 2004-06-21 2013-03-18 가부시키가이샤 니콘 노광 장치 및 그 부재의 세정 방법, 노광 장치의 메인터넌스 방법, 메인터넌스 기기, 그리고 디바이스 제조 방법
EP3267257B1 (en) 2004-08-03 2019-02-13 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
KR101236120B1 (ko) 2004-10-26 2013-02-28 가부시키가이샤 니콘 기판 처리 방법, 노광 장치 및 디바이스 제조 방법
US20080137056A1 (en) * 2004-12-06 2008-06-12 Tomoharu Fujiwara Method for Processing Substrate, Exposure Method, Exposure Apparatus, and Method for Producing Device
EP1821337B1 (en) 2004-12-06 2016-05-11 Nikon Corporation Maintenance method
US7450217B2 (en) 2005-01-12 2008-11-11 Asml Netherlands B.V. Exposure apparatus, coatings for exposure apparatus, lithographic apparatus, device manufacturing method, and device manufactured thereby
CN101156226B (zh) * 2005-04-27 2012-03-14 株式会社尼康 曝光方法、曝光装置、组件制造方法、以及膜的评估方法
JP4858062B2 (ja) * 2005-04-27 2012-01-18 株式会社ニコン 露光方法、露光装置、デバイス製造方法、及び膜の評価方法
KR20070122445A (ko) 2005-04-28 2007-12-31 가부시키가이샤 니콘 노광 방법 및 노광 장치, 그리고 디바이스 제조 방법
WO2006133428A2 (en) * 2005-06-08 2006-12-14 Jeffery Givens Improvements in the device and method of providing portable electrical, hydraulic and air pressure utilities for on-site tool applications
EP1901338A4 (en) * 2005-06-30 2011-06-29 Nikon Corp EXPOSURE APPARATUS AND METHOD, METHOD OF SERVICING THE EXPOSURE APPARATUS, AND DEVICE MANUFACTURING METHOD
EP1909310A4 (en) * 2005-07-11 2010-10-06 Nikon Corp EXPOSURE DEVICE AND METHOD FOR MANUFACTURING COMPONENTS
US8125610B2 (en) * 2005-12-02 2012-02-28 ASML Metherlands B.V. Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus
JP2007173695A (ja) * 2005-12-26 2007-07-05 Sokudo:Kk 基板処理方法、基板処理システムおよび基板処理装置
CN102298274A (zh) * 2006-05-18 2011-12-28 株式会社尼康 曝光方法及装置、维护方法、以及组件制造方法
US7969548B2 (en) 2006-05-22 2011-06-28 Asml Netherlands B.V. Lithographic apparatus and lithographic apparatus cleaning method
CN102156389A (zh) * 2006-05-23 2011-08-17 株式会社尼康 维修方法、曝光方法及装置、以及组件制造方法
KR101523388B1 (ko) * 2006-08-30 2015-05-27 가부시키가이샤 니콘 노광 장치, 디바이스 제조 방법, 클리닝 방법 및 클리닝용 부재
WO2008029884A1 (fr) 2006-09-08 2008-03-13 Nikon Corporation Dispositif et procédé de nettoyage, et procédé de fabrication du dispositif
WO2008089990A2 (en) * 2007-01-26 2008-07-31 Carl Zeiss Smt Ag Method for operating an immersion lithography apparatus
US8817226B2 (en) 2007-02-15 2014-08-26 Asml Holding N.V. Systems and methods for insitu lens cleaning using ozone in immersion lithography
US8654305B2 (en) * 2007-02-15 2014-02-18 Asml Holding N.V. Systems and methods for insitu lens cleaning in immersion lithography
WO2008146819A1 (ja) 2007-05-28 2008-12-04 Nikon Corporation 露光装置、デバイス製造方法、洗浄装置、及びクリーニング方法並びに露光方法
US8098362B2 (en) 2007-05-30 2012-01-17 Nikon Corporation Detection device, movable body apparatus, pattern formation apparatus and pattern formation method, exposure apparatus and exposure method, and device manufacturing method
US20090025753A1 (en) * 2007-07-24 2009-01-29 Asml Netherlands B.V. Lithographic Apparatus And Contamination Removal Or Prevention Method
US7916269B2 (en) 2007-07-24 2011-03-29 Asml Netherlands B.V. Lithographic apparatus and contamination removal or prevention method
NL1036571A1 (nl) * 2008-03-07 2009-09-08 Asml Netherlands Bv Lithographic Apparatus and Methods.
NL1036709A1 (nl) * 2008-04-24 2009-10-27 Asml Netherlands Bv Lithographic apparatus and a method of operating the apparatus.
NL2003363A (en) * 2008-09-10 2010-03-15 Asml Netherlands Bv Lithographic apparatus, method of manufacturing an article for a lithographic apparatus and device manufacturing method.
JPWO2010044268A1 (ja) * 2008-10-15 2012-03-15 株式会社ニコン 露光装置及びその組立て方法、並びにデバイス製造方法
JP2010147471A (ja) 2008-12-18 2010-07-01 Asml Netherlands Bv リソグラフィ装置及び少なくとも２つのターゲット部分を照射する方法
JP5861642B2 (ja) * 2009-11-09 2016-02-16 株式会社ニコン 露光装置、露光方法、露光装置のメンテナンス方法、露光装置の調整方法、デバイス製造方法、及びダミー基板
NL2005610A (en) 2009-12-02 2011-06-06 Asml Netherlands Bv Lithographic apparatus and surface cleaning method.
US20120113513A1 (en) * 2010-10-22 2012-05-10 The Regents Of The University Of Colorado, A Body Corporate Self-cleaning of optical surfaces in low-pressure reactive gas environments in advanced optical systems
TW201229673A (en) * 2011-01-03 2012-07-16 Inotera Memories Inc Immersion exposure apparatus and method of utilizing thereof
CN102179029B (zh) * 2011-03-21 2012-08-08 北京交通大学 光催化降解抗生素及其它新兴污染物的实验装置
CN103987664B (zh) 2011-12-06 2017-03-08 德尔塔阀门公司 龙头中的臭氧分配
WO2014054689A1 (ja) * 2012-10-02 2014-04-10 株式会社ニコン 移動体装置、露光装置、及びデバイス製造方法
KR102071873B1 (ko) * 2012-12-27 2020-02-03 삼성디스플레이 주식회사 용매 제거장치 및 이를 포함하는 포토리소그래피 장치
KR101433509B1 (ko) * 2013-02-07 2014-08-22 (주)오로스 테크놀로지 다크 필드 조명 장치
JP5783472B2 (ja) * 2013-06-10 2015-09-24 ウシオ電機株式会社 アッシング装置
JP6278833B2 (ja) 2014-05-21 2018-02-14 キヤノン株式会社 リソグラフィ装置、および物品の製造方法
US10549001B2 (en) * 2015-07-08 2020-02-04 Clean Light Laboratories Llc System and device for sanitizing personal use items
US11458214B2 (en) 2015-12-21 2022-10-04 Delta Faucet Company Fluid delivery system including a disinfectant device
TWI770115B (zh) 2017-02-06 2022-07-11 新加坡商平面半導體公司 加工汙水之去除
SG11201906903PA (en) 2017-02-06 2019-08-27 Planar Semiconductor Inc Sub-nanometer-level substrate cleaning mechanism
US11069521B2 (en) * 2017-02-06 2021-07-20 Planar Semiconductor, Inc. Subnanometer-level light-based substrate cleaning mechanism
US20200251691A1 (en) * 2017-03-17 2020-08-06 Applied Materials, Inc. Apparatus for vacuum processing of a substrate, system for vacuum processing of a substrate, and method for transportation of a substrate carrier and a mask carrier in a vacuum chamber
DE102017213121A1 (de) 2017-07-31 2019-01-31 Carl Zeiss Smt Gmbh Optisches System für die Mikrolithographie
WO2019239926A1 (ja) 2018-06-12 2019-12-19 ウシオ電機株式会社 真空紫外光偏光素子、真空紫外光偏光装置、真空紫外光偏光方法及び配向方法
JP7200510B2 (ja) * 2018-06-12 2023-01-10 ウシオ電機株式会社 配向方法及び光配向装置
WO2020064265A1 (en) 2018-09-24 2020-04-02 Asml Netherlands B.V. A process tool and an inspection method
CN114503034A (zh) * 2019-10-01 2022-05-13 Asml荷兰有限公司 清洁装置、光刻设备、去除水或其它污染物的方法、和器件制造方法
KR102316238B1 (ko) * 2020-02-26 2021-10-22 세메스 주식회사 기판 처리 장치 및 기판 처리 방법

Family Cites Families (87)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4346164A (en) * 1980-10-06 1982-08-24 Werner Tabarelli Photolithographic method for the manufacture of integrated circuits
JPS57117238A (en) * 1981-01-14 1982-07-21 Nippon Kogaku Kk <Nikon> Exposing and baking device for manufacturing integrated circuit with illuminometer
JPS57153433A (en) * 1981-03-18 1982-09-22 Hitachi Ltd Manufacturing device for semiconductor
DD221563A1 (de) * 1983-09-14 1985-04-24 Mikroelektronik Zt Forsch Tech Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur
JPS6197918A (ja) * 1984-10-19 1986-05-16 Hitachi Ltd Ｘ線露光装置
JPH0782981B2 (ja) 1986-02-07 1995-09-06 株式会社ニコン 投影露光方法及び装置
JP2897355B2 (ja) 1990-07-05 1999-05-31 株式会社ニコン アライメント方法，露光装置，並びに位置検出方法及び装置
JP3246615B2 (ja) 1992-07-27 2002-01-15 株式会社ニコン 照明光学装置、露光装置、及び露光方法
JPH06188169A (ja) 1992-08-24 1994-07-08 Canon Inc 結像方法及び該方法を用いる露光装置及び該方法を用いるデバイス製造方法
JPH06124873A (ja) 1992-10-09 1994-05-06 Canon Inc 液浸式投影露光装置
JP2753930B2 (ja) * 1992-11-27 1998-05-20 キヤノン株式会社 液浸式投影露光装置
JP3412704B2 (ja) 1993-02-26 2003-06-03 株式会社ニコン 投影露光方法及び装置、並びに露光装置
US5874820A (en) 1995-04-04 1999-02-23 Nikon Corporation Window frame-guided stage mechanism
US5528118A (en) 1994-04-01 1996-06-18 Nikon Precision, Inc. Guideless stage with isolated reaction stage
JP3555230B2 (ja) 1994-05-18 2004-08-18 株式会社ニコン 投影露光装置
US5623853A (en) 1994-10-19 1997-04-29 Nikon Precision Inc. Precision motion stage with single guide beam and follower stage
JPH08316124A (ja) * 1995-05-19 1996-11-29 Hitachi Ltd 投影露光方法及び露光装置
JPH08313705A (ja) * 1995-05-22 1996-11-29 Seiko Epson Corp 防曇性物品及びその製造方法
US5825043A (en) 1996-10-07 1998-10-20 Nikon Precision Inc. Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus
JP4029182B2 (ja) 1996-11-28 2008-01-09 株式会社ニコン 露光方法
JP4029183B2 (ja) 1996-11-28 2008-01-09 株式会社ニコン 投影露光装置及び投影露光方法
JP2000505958A (ja) 1996-12-24 2000-05-16 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ ２個の物品ホルダを有する二次元バランス位置決め装置及びこの位置決め装置を有するリソグラフ装置
JP3747566B2 (ja) 1997-04-23 2006-02-22 株式会社ニコン 液浸型露光装置
US6268904B1 (en) * 1997-04-23 2001-07-31 Nikon Corporation Optical exposure apparatus and photo-cleaning method
JPH1116816A (ja) 1997-06-25 1999-01-22 Nikon Corp 投影露光装置、該装置を用いた露光方法、及び該装置を用いた回路デバイスの製造方法
JPH1152102A (ja) * 1997-08-05 1999-02-26 Nikon Corp エキシマレーザー用光学部材、その仮保護方法及び投影露光装置
JP3445120B2 (ja) * 1997-09-30 2003-09-08 キヤノン株式会社 露光装置及びデバイスの製造方法
JP4210871B2 (ja) 1997-10-31 2009-01-21 株式会社ニコン 露光装置
JPH11283903A (ja) * 1998-03-30 1999-10-15 Nikon Corp 投影光学系検査装置及び同装置を備えた投影露光装置
AU1175799A (en) * 1997-11-21 1999-06-15 Nikon Corporation Projection aligner and projection exposure method
EP1041357A4 (en) * 1997-12-18 2005-06-15 Nikon Corp PLATINUM AND EXPOSURE APPARATUS
WO1999049504A1 (fr) 1998-03-26 1999-09-30 Nikon Corporation Procede et systeme d'exposition par projection
JP2000058436A (ja) 1998-08-11 2000-02-25 Nikon Corp 投影露光装置及び露光方法
JP2000079367A (ja) * 1998-09-07 2000-03-21 Dainippon Screen Mfg Co Ltd 処理液供給用ノズルおよび該ノズルを備えた基板処理装置、ならびに該ノズルを用いた塗布方法
JP2000311933A (ja) * 1999-04-27 2000-11-07 Canon Inc 基板保持装置、基板搬送システム、露光装置、塗布装置およびデバイス製造方法ならびに基板保持部クリーニング方法
JP2001087696A (ja) * 1999-09-22 2001-04-03 Promos Technologies Inc フォトレジスト現像用のノズル座
WO2001035168A1 (en) 1999-11-10 2001-05-17 Massachusetts Institute Of Technology Interference lithography utilizing phase-locked scanning beams
JP2001170495A (ja) * 1999-12-16 2001-06-26 Daido Steel Co Ltd 光触媒活性を有するチタンまたはチタン基合金の製造方法
JP2001210582A (ja) 2000-01-28 2001-08-03 Nikon Corp 投影露光装置とその光洗浄方法、およびマイクロデバイス並びにマイクロデバイスの製造方法
DE10011130A1 (de) 2000-03-10 2001-09-13 Mannesmann Vdo Ag Entlüftungseinrichtung für einen Kraftstoffbehälter
JP2002014005A (ja) 2000-04-25 2002-01-18 Nikon Corp 空間像計測方法、結像特性計測方法、空間像計測装置及び露光装置
TW529172B (en) 2001-07-24 2003-04-21 Asml Netherlands Bv Imaging apparatus
JP2003124089A (ja) * 2001-10-09 2003-04-25 Nikon Corp 荷電粒子線露光装置及び露光方法
EP1313337A1 (de) * 2001-11-15 2003-05-21 Siemens Aktiengesellschaft Verfahren zur Übertragung von Informationen in einem zellularen Funkkommunikationssystem mit Funksektoren
EP1329773A3 (en) 2002-01-18 2006-08-30 ASML Netherlands B.V. Lithographic apparatus, apparatus cleaning method, and device manufacturing method
EP1333323A3 (en) * 2002-02-01 2004-10-06 Nikon Corporation Self-cleaning reflective optical elements for use in x-ray optical systems, and optical systems and microlithography systems comprising same
US6778254B2 (en) * 2002-02-18 2004-08-17 Ando Electric Co., Ltd. Motion picture code evaluator and related systems
JP3806670B2 (ja) 2002-06-12 2006-08-09 住友金属建材株式会社 土留め用かご枠の連結部材
US20040021061A1 (en) * 2002-07-30 2004-02-05 Frederik Bijkerk Photodiode, charged-coupled device and method for the production
EP1532489A2 (en) 2002-08-23 2005-05-25 Nikon Corporation Projection optical system and method for photolithography and exposure apparatus and method using same
JP2004114619A (ja) * 2002-09-27 2004-04-15 Sony Corp インクジェット記録装置
EP1420299B1 (en) 2002-11-12 2011-01-05 ASML Netherlands B.V. Immersion lithographic apparatus and device manufacturing method
SG121819A1 (en) * 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
CN101424881B (zh) * 2002-11-12 2011-11-30 Asml荷兰有限公司 光刻投射装置
DE60335595D1 (de) * 2002-11-12 2011-02-17 Asml Netherlands Bv Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung
EP1586386A4 (en) * 2002-12-03 2010-04-21 Nikon Corp METHOD AND DEVICE FOR REMOVING CONTAMINATION AND EXPOSURE METHOD AND DEVICE
TW200412617A (en) * 2002-12-03 2004-07-16 Nikon Corp Optical illumination device, method for adjusting optical illumination device, exposure device and exposure method
ATE424026T1 (de) * 2002-12-13 2009-03-15 Koninkl Philips Electronics Nv Flüssigkeitsentfernung in einem verfahren und einer einrichtung zum bestrahlen von flecken auf einer schicht
US7798159B2 (en) * 2002-12-19 2010-09-21 Valerie Palfy At-home integrated cleaning and disinfection system and method for dental hardware
EP2161620A1 (en) * 2003-04-11 2010-03-10 Nikon Corporation Cleanup method for optics in immersion lithography
TWI616932B (zh) * 2003-05-23 2018-03-01 Nikon Corp Exposure device and component manufacturing method
EP2261741A3 (en) * 2003-06-11 2011-05-25 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US7317504B2 (en) * 2004-04-08 2008-01-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US6867844B2 (en) * 2003-06-19 2005-03-15 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
JP2006528835A (ja) * 2003-07-24 2006-12-21 カール・ツアイス・エスエムテイ・アーゲー マイクロリソグラフィ投影露光装置および浸漬液体を浸漬空間へ導入する方法
JP2005072404A (ja) * 2003-08-27 2005-03-17 Sony Corp 露光装置および半導体装置の製造方法
JP4305095B2 (ja) * 2003-08-29 2009-07-29 株式会社ニコン 光学部品の洗浄機構を搭載した液浸投影露光装置及び液浸光学部品洗浄方法
JP2005083800A (ja) * 2003-09-05 2005-03-31 Hitachi Ltd 欠陥検査方法及び欠陥検査装置
US7394521B2 (en) * 2003-12-23 2008-07-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7589822B2 (en) * 2004-02-02 2009-09-15 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
JP2005236047A (ja) * 2004-02-19 2005-09-02 Canon Inc 露光装置及び方法
US20050205108A1 (en) * 2004-03-16 2005-09-22 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system for immersion lithography lens cleaning
KR101747662B1 (ko) * 2004-06-09 2017-06-15 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
KR101245070B1 (ko) * 2004-06-21 2013-03-18 가부시키가이샤 니콘 노광 장치 및 그 부재의 세정 방법, 노광 장치의 메인터넌스 방법, 메인터넌스 기기, 그리고 디바이스 제조 방법
JP4677833B2 (ja) * 2004-06-21 2011-04-27 株式会社ニコン 露光装置、及びその部材の洗浄方法、露光装置のメンテナンス方法、メンテナンス機器、並びにデバイス製造方法
JP4444743B2 (ja) * 2004-07-07 2010-03-31 キヤノン株式会社 露光装置及びデバイス製造方法
JP2006032750A (ja) * 2004-07-20 2006-02-02 Canon Inc 液浸型投影露光装置、及びデバイス製造方法
US7224427B2 (en) * 2004-08-03 2007-05-29 Taiwan Semiconductor Manufacturing Company, Ltd. Megasonic immersion lithography exposure apparatus and method
JP4772306B2 (ja) * 2004-09-06 2011-09-14 株式会社東芝 液浸光学装置及び洗浄方法
US20090213357A1 (en) * 2004-10-08 2009-08-27 Dai Arai Exposure apparatus and device manufacturing method
US7362412B2 (en) * 2004-11-18 2008-04-22 International Business Machines Corporation Method and apparatus for cleaning a semiconductor substrate in an immersion lithography system
US7732123B2 (en) * 2004-11-23 2010-06-08 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion photolithography with megasonic rinse
EP1821337B1 (en) * 2004-12-06 2016-05-11 Nikon Corporation Maintenance method
US7880860B2 (en) * 2004-12-20 2011-02-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7450217B2 (en) * 2005-01-12 2008-11-11 Asml Netherlands B.V. Exposure apparatus, coatings for exposure apparatus, lithographic apparatus, device manufacturing method, and device manufactured thereby
US8125610B2 (en) * 2005-12-02 2012-02-28 ASML Metherlands B.V. Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus
US20090025753A1 (en) * 2007-07-24 2009-01-29 Asml Netherlands B.V. Lithographic Apparatus And Contamination Removal Or Prevention Method

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EP3190605B1 (en) 2018-05-09
JP2012134512A (ja) 2012-07-12
JP5353856B2 (ja) 2013-11-27
KR101245070B1 (ko) 2013-03-18
KR20070020080A (ko) 2007-02-16
EP1783822A1 (en) 2007-05-09
JP5573857B2 (ja) 2014-08-20
WO2005124833A1 (ja) 2005-12-29
EP1783822A4 (en) 2009-07-15
US20080252865A1 (en) 2008-10-16
EP3462241A1 (en) 2019-04-03
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EP3255652A1 (en) 2017-12-13
EP3255652B1 (en) 2018-07-25
KR20120003509A (ko) 2012-01-10
EP3098835B1 (en) 2017-07-26
JP2011014929A (ja) 2011-01-20
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US20090225286A1 (en) 2009-09-10
EP3098835A1 (en) 2016-11-30
US20100134772A1 (en) 2010-06-03
KR20120125995A (ko) 2012-11-19
JP2014027316A (ja) 2014-02-06
EP3190605A1 (en) 2017-07-12

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