HK1201376A1 - 半導體裝置 - Google Patents

半導體裝置

Info

Publication number
HK1201376A1
HK1201376A1 HK15101659.3A HK15101659A HK1201376A1 HK 1201376 A1 HK1201376 A1 HK 1201376A1 HK 15101659 A HK15101659 A HK 15101659A HK 1201376 A1 HK1201376 A1 HK 1201376A1
Authority
HK
Hong Kong
Prior art keywords
semiconductor device
semiconductor
Prior art date
Application number
HK15101659.3A
Other languages
English (en)
Inventor
Kenji Oyachi
Tamaki Wada
Yuichi Morinaga
Original Assignee
Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Publication of HK1201376A1 publication Critical patent/HK1201376A1/zh

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    • HELECTRICITY
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    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06KGRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K19/00Record carriers for use with machines and with at least a part designed to carry digital markings
    • G06K19/06Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
    • G06K19/067Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
    • G06K19/07Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
    • G06K19/077Constructional details, e.g. mounting of circuits in the carrier
    • G06K19/07718Constructional details, e.g. mounting of circuits in the carrier the record carrier being manufactured in a continuous process, e.g. using endless rolls
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06KGRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K19/00Record carriers for use with machines and with at least a part designed to carry digital markings
    • G06K19/06Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
    • G06K19/067Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
    • G06K19/07Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
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    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06KGRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
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    • G06K19/06Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
    • G06K19/067Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
    • G06K19/07Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
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    • G06COMPUTING; CALCULATING OR COUNTING
    • G06KGRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
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    • H01L2224/85438Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/85444Gold (Au) as principal constituent
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    • H01L2224/92Specific sequence of method steps
    • H01L2224/922Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222Sequential connecting processes
    • H01L2224/92242Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
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    • H01L2224/93Batch processes
    • H01L2224/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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    • H01L24/02Bonding areas ; Manufacturing methods related thereto
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    • H01L24/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31Structure, shape, material or disposition of the layer connectors after the connecting process
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    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
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    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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    • H01L24/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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    • H01L2924/0001Technical content checked by a classifier
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    • H01L2924/1015Shape
    • H01L2924/1016Shape being a cuboid
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    • H01L2924/102Material of the semiconductor or solid state bodies
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    • H01L2924/10251Elemental semiconductors, i.e. Group IV
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    • H01L2924/181Encapsulation
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    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • H01L2924/183Connection portion, e.g. seal
    • H01L2924/18301Connection portion, e.g. seal being an anchoring portion, i.e. mechanical interlocking between the encapsulation resin and another package part

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Geometry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Wire Bonding (AREA)
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Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9362254B1 (en) 2015-02-12 2016-06-07 Nanya Technology Corporation Wire bonding method and chip structure
JP6125332B2 (ja) * 2013-05-31 2017-05-10 ルネサスエレクトロニクス株式会社 半導体装置
JP6279339B2 (ja) * 2014-02-07 2018-02-14 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
DE102015102453A1 (de) 2015-02-20 2016-08-25 Heraeus Deutschland GmbH & Co. KG Bandförmiges Substrat zur Herstellung von Chipkartenmodulen, Chipkartenmodul, elektronische Einrichtung mit einem derartigen Chipkartenmodul und Verfahren zur Herstellung eines Substrates
US20170039462A1 (en) * 2015-08-03 2017-02-09 Johnson Electric S.A. Contact Smart Card and Method of Forming Such
CN108028234B (zh) * 2015-12-04 2021-12-31 瑞萨电子株式会社 半导体芯片、半导体器件以及电子器件
US9881870B2 (en) * 2015-12-30 2018-01-30 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
CN107025481B (zh) * 2016-02-02 2021-08-20 上海伯乐电子有限公司 柔性印制电路板及应用其的智能卡模块和智能卡
KR102521893B1 (ko) * 2016-09-23 2023-04-14 삼성전자주식회사 패키지 기판 및 이를 포함하는 반도체 패키지
IT201700089965A1 (it) 2017-08-03 2019-02-03 St Microelectronics Srl Procedimento di produzione di componenti elettronici e corrispondente componente elettronico
JP2019186326A (ja) * 2018-04-05 2019-10-24 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP2020101484A (ja) * 2018-12-25 2020-07-02 セイコーエプソン株式会社 慣性センサー、電子機器および移動体
TWI785619B (zh) * 2021-05-21 2022-12-01 德商Ses Rfid解決方案有限公司 晶片封裝結構、用以製造一晶片封裝結構的方法及無線識別標籤

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11163204A (ja) 1997-11-28 1999-06-18 Fujitsu Ltd 半導体装置及びその実装構造
JP3181243B2 (ja) * 1997-06-25 2001-07-03 富士通株式会社 半導体装置及びその製造方法
JP3506002B2 (ja) * 1997-07-28 2004-03-15 松下電工株式会社 プリント配線板の製造方法
US6117704A (en) * 1999-03-31 2000-09-12 Irvine Sensors Corporation Stackable layers containing encapsulated chips
US6271057B1 (en) * 1999-11-19 2001-08-07 Advanced Semiconductor Engineering, Inc. Method of making semiconductor chip package
DE10325566A1 (de) * 2003-06-05 2005-01-13 Infineon Technologies Ag Chipkartenmodul
JP4361828B2 (ja) * 2004-04-30 2009-11-11 富士通マイクロエレクトロニクス株式会社 樹脂封止型半導体装置
US20050253245A1 (en) * 2004-05-12 2005-11-17 Mark Lynch Package design and method for electrically connecting die to package
JP4528100B2 (ja) * 2004-11-25 2010-08-18 新光電気工業株式会社 半導体装置及びその製造方法
JP2006156574A (ja) * 2004-11-26 2006-06-15 Sanyo Electric Co Ltd 回路装置およびその製造方法
JP2007188489A (ja) * 2005-12-21 2007-07-26 Infineon Technologies Ag スマートカードモジュール
FR2895548B1 (fr) 2005-12-26 2008-03-21 Oberthur Card Syst Sa Procede de fabrication d'une carte a microcircuit, et carte a microcircuit associee
JP4503039B2 (ja) 2006-04-27 2010-07-14 三洋電機株式会社 回路装置
JP2008066331A (ja) * 2006-09-04 2008-03-21 Renesas Technology Corp 半導体装置の製造方法
US7573131B2 (en) * 2006-10-27 2009-08-11 Compass Technology Co., Ltd. Die-up integrated circuit package with grounded stiffener
KR100932680B1 (ko) * 2007-02-21 2009-12-21 가부시키가이샤 신가와 반도체 장치 및 와이어 본딩 방법
KR100891330B1 (ko) * 2007-02-21 2009-03-31 삼성전자주식회사 반도체 패키지 장치와, 반도체 패키지의 제조방법과,반도체 패키지 장치를 갖는 카드 장치 및 반도체 패키지장치를 갖는 카드 장치의 제조 방법
JP2009038145A (ja) 2007-07-31 2009-02-19 Toshiba Components Co Ltd リード端子型半導体装置
TWI358816B (en) * 2008-03-19 2012-02-21 Chipmos Technologies Inc Chip package structure
JP2010040902A (ja) * 2008-08-07 2010-02-18 Panasonic Corp 半導体装置
US20100059883A1 (en) * 2008-09-05 2010-03-11 Freescale Semiconductor, Inc. Method of forming ball bond
JP5116643B2 (ja) 2008-11-27 2013-01-09 京セラ株式会社 発光装置
KR101113891B1 (ko) 2009-10-01 2012-02-29 삼성테크윈 주식회사 리드 프레임 및 리드 프레임 제조 방법
JP2011210936A (ja) * 2010-03-30 2011-10-20 Renesas Electronics Corp 半導体装置の製造方法および半導体装置
TW201209971A (en) * 2010-08-17 2012-03-01 Powertech Technology Inc Semiconductor package with bonding wires in window encapsulated by underfill material and method fabricated for the same
TWI416682B (zh) * 2010-09-01 2013-11-21 Unimicron Technology Corp 封裝結構
US8991711B2 (en) * 2012-07-19 2015-03-31 Infineon Technologies Ag Chip card module
JP6125332B2 (ja) * 2013-05-31 2017-05-10 ルネサスエレクトロニクス株式会社 半導体装置

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JP2014236056A (ja) 2014-12-15
US20160293564A1 (en) 2016-10-06
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EP2816590A3 (en) 2015-04-08
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US9337134B2 (en) 2016-05-10
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