HK1041055A1 - 微型平版印刷術光阻劑、聚合體及過程 - Google Patents
微型平版印刷術光阻劑、聚合體及過程Info
- Publication number
- HK1041055A1 HK1041055A1 HK02101647.3A HK02101647A HK1041055A1 HK 1041055 A1 HK1041055 A1 HK 1041055A1 HK 02101647 A HK02101647 A HK 02101647A HK 1041055 A1 HK1041055 A1 HK 1041055A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- microlithography
- photoresists
- polymers
- processes
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
- Y10S430/108—Polyolefin or halogen containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
- Y10S430/111—Polymer of unsaturated acid or ester
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/115—Cationic or anionic
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10150298P | 1998-09-23 | 1998-09-23 | |
US12004599P | 1999-02-12 | 1999-02-12 | |
PCT/US1999/021912 WO2000017712A1 (en) | 1998-09-23 | 1999-09-21 | Photoresists, polymers and processes for microlithography |
Publications (1)
Publication Number | Publication Date |
---|---|
HK1041055A1 true HK1041055A1 (zh) | 2002-06-28 |
Family
ID=26798325
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK02101647.3A HK1041055A1 (zh) | 1998-09-23 | 2002-03-04 | 微型平版印刷術光阻劑、聚合體及過程 |
Country Status (10)
Country | Link |
---|---|
US (2) | US6593058B1 (zh) |
EP (1) | EP1131677B1 (zh) |
JP (2) | JP4327360B2 (zh) |
CN (1) | CN1253759C (zh) |
AU (1) | AU6056099A (zh) |
DE (1) | DE69926532T2 (zh) |
HK (1) | HK1041055A1 (zh) |
IL (1) | IL141803A0 (zh) |
TW (1) | TWI221944B (zh) |
WO (1) | WO2000017712A1 (zh) |
Families Citing this family (157)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4327360B2 (ja) * | 1998-09-23 | 2009-09-09 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | ホトレジスト、ポリマーおよびマイクロリソグラフィの方法 |
US6849377B2 (en) * | 1998-09-23 | 2005-02-01 | E. I. Du Pont De Nemours And Company | Photoresists, polymers and processes for microlithography |
US6673523B2 (en) | 1999-03-09 | 2004-01-06 | Matsushita Electric Industrial Co., Ltd. | Pattern formation method |
CN1224620C (zh) * | 1999-05-04 | 2005-10-26 | 纳幕尔杜邦公司 | 生产氟化环氧化物的方法和有关聚合物 |
US6790587B1 (en) | 1999-05-04 | 2004-09-14 | E. I. Du Pont De Nemours And Company | Fluorinated polymers, photoresists and processes for microlithography |
DE60044493D1 (de) * | 1999-05-04 | 2010-07-15 | Du Pont | Fluorierte photoresists und verfahren für die mikrolithographie |
US6468712B1 (en) * | 2000-02-25 | 2002-10-22 | Massachusetts Institute Of Technology | Resist materials for 157-nm lithography |
JP4923376B2 (ja) * | 2000-04-04 | 2012-04-25 | ダイキン工業株式会社 | 酸反応性基を有する新規なフッ素ポリマーおよびそれを用いた化学増幅型フォトレジスト組成物 |
US6951705B2 (en) | 2000-05-05 | 2005-10-04 | E. I. Du Pont De Nemours And Company | Polymers for photoresist compositions for microlithography |
EP1279069A2 (en) * | 2000-05-05 | 2003-01-29 | E.I. Du Pont De Nemours And Company | Polymers for photoresist compositions for microlithography |
EP1278786B1 (en) * | 2000-05-05 | 2006-01-04 | E.I. Du Pont De Nemours And Company | Copolymers for photoresists and processes therefor |
SG100729A1 (en) * | 2000-06-16 | 2003-12-26 | Jsr Corp | Radiation-sensitive resin composition |
KR20030076228A (ko) * | 2000-06-21 | 2003-09-26 | 아사히 가라스 가부시키가이샤 | 레지스트 조성물 |
AU2001288865A1 (en) * | 2000-09-08 | 2002-03-22 | Shipley Company, L.L.C. | Polymers and photoresist compositions comprising electronegative groups |
US7132214B2 (en) | 2000-09-08 | 2006-11-07 | Shipley Company, L.L.C. | Polymers and photoresist compositions for short wavelength imaging |
WO2002021213A2 (en) * | 2000-09-08 | 2002-03-14 | Shipley Company, L.L.C. | Novel polymers and photoresist compositions for short wavelength imaging |
US7108953B2 (en) | 2000-10-13 | 2006-09-19 | E. I. Du Pont De Nemours And Company | Dissolution inhibitors in photoresist compositions for microlithography |
AU2002232383A1 (en) * | 2000-10-18 | 2002-04-29 | E.I. Du Pont De Nemours And Company | Compositions for microlithography |
US6974657B2 (en) | 2000-10-18 | 2005-12-13 | E. I. Du Pont De Nemours And Company | Compositions for microlithography |
WO2002036533A1 (fr) * | 2000-10-31 | 2002-05-10 | Daicel Chemical Industries, Ltd. | Monomeres possedant des groupes suppresseurs d"electrons et leurs procedes de preparation |
JP4034538B2 (ja) | 2000-10-31 | 2008-01-16 | 株式会社東芝 | フォトレジスト用高分子化合物、単量体化合物、感光性樹脂組成物、これを用いたパターン形成方法、および電子部品の製造方法 |
WO2002039186A2 (en) * | 2000-11-09 | 2002-05-16 | E. I. Du Pont De Nemours And Company | Photoacid generators in photoresist compositions for microlithography |
CN1545644A (zh) * | 2000-11-29 | 2004-11-10 | 纳幕尔杜邦公司 | 用于显微光刻中的抗反射层 |
EP1354245A2 (en) * | 2000-11-29 | 2003-10-22 | E. I. du Pont de Nemours and Company | Multilayer elements containing photoresist compositions and their use in microlithography |
JP2004536327A (ja) | 2000-11-29 | 2004-12-02 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | ポリマーブレンド及びマイクロリソグラフィ用フォトレジスト組成物中でのそれらの使用 |
EP1379920A2 (en) * | 2000-11-29 | 2004-01-14 | E. I. du Pont de Nemours and Company | Photoresist compositions comprising bases and surfactants for microlithography |
US6730452B2 (en) * | 2001-01-26 | 2004-05-04 | International Business Machines Corporation | Lithographic photoresist composition and process for its use |
JP3800538B2 (ja) * | 2001-02-09 | 2006-07-26 | 旭硝子株式会社 | レジスト組成物 |
JP4821068B2 (ja) * | 2001-02-22 | 2011-11-24 | 大日本印刷株式会社 | 体積型ホログラム記録用感光性組成物及び体積型ホログラム記録用感光性媒体 |
US6794109B2 (en) | 2001-02-23 | 2004-09-21 | Massachusetts Institute Of Technology | Low abosorbing resists for 157 nm lithography |
US6787286B2 (en) | 2001-03-08 | 2004-09-07 | Shipley Company, L.L.C. | Solvents and photoresist compositions for short wavelength imaging |
JP4554889B2 (ja) | 2001-03-22 | 2010-09-29 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | フォトレジスト組成物 |
WO2002084401A2 (en) * | 2001-03-22 | 2002-10-24 | Shipley Company, L.L.C. | Photoresist compositions comprising solvents for short wavelength imaging |
EP1246013A3 (en) * | 2001-03-30 | 2003-11-19 | E.I. Du Pont De Nemours And Company | Photoresists, polymers and processes for microlithography |
WO2002088216A1 (fr) * | 2001-04-27 | 2002-11-07 | Mitsui Chemicals, Inc. | Polymeres cycloolefiniques fluores, procedes de preparation de monomeres cycloolefiniques fluores et polymeres associes, et leur application |
US6936398B2 (en) * | 2001-05-09 | 2005-08-30 | Massachusetts Institute Of Technology | Resist with reduced line edge roughness |
US6686429B2 (en) | 2001-05-11 | 2004-02-03 | Clariant Finance (Bvi) Limited | Polymer suitable for photoresist compositions |
US6737215B2 (en) | 2001-05-11 | 2004-05-18 | Clariant Finance (Bvi) Ltd | Photoresist composition for deep ultraviolet lithography |
JP4137408B2 (ja) | 2001-05-31 | 2008-08-20 | 富士フイルム株式会社 | ポジ型レジスト組成物 |
US6958123B2 (en) | 2001-06-15 | 2005-10-25 | Reflectivity, Inc | Method for removing a sacrificial material with a compressed fluid |
KR100863984B1 (ko) | 2001-07-03 | 2008-10-16 | 후지필름 가부시키가이샤 | 포지티브 레지스트 조성물 |
US20040234899A1 (en) * | 2001-07-12 | 2004-11-25 | Minoru Toriumi | Method of forming fine pattern |
JP4155771B2 (ja) * | 2001-08-27 | 2008-09-24 | 大日本印刷株式会社 | 体積型ホログラム記録用感光性組成物及びそれを用いた体積型ホログラム記録用感光性媒体 |
US20040248042A1 (en) * | 2001-10-03 | 2004-12-09 | Minoru Toriumi | Method of forming fine pattern |
DE60217251T2 (de) * | 2001-10-10 | 2007-07-12 | Rohm And Haas Co. | Verbessertes Verfahren zur Herstellung von Lithiumborohydrid |
US20040106062A1 (en) * | 2001-10-31 | 2004-06-03 | Petrov Viacheslav Alexandrovich | Photoacid generators in photoresist compositions for microlithography |
US6723488B2 (en) | 2001-11-07 | 2004-04-20 | Clariant Finance (Bvi) Ltd | Photoresist composition for deep UV radiation containing an additive |
JP2003160612A (ja) * | 2001-11-26 | 2003-06-03 | Daicel Chem Ind Ltd | フォトレジスト用高分子化合物及びフォトレジスト用樹脂組成物 |
US7205086B2 (en) * | 2001-11-26 | 2007-04-17 | E. I. Du Pont De Nemours And Company | Multilayer elements containing photoresist compositions and their use in microlithography |
EP1319981B1 (en) * | 2001-12-13 | 2012-10-24 | FUJIFILM Corporation | Positive resist composition |
US6800416B2 (en) * | 2002-01-09 | 2004-10-05 | Clariant Finance (Bvi) Ltd. | Negative deep ultraviolet photoresist |
US6893792B2 (en) * | 2002-02-19 | 2005-05-17 | Sumitomo Chemical Company, Limited | Positive resist composition |
EP1341038B1 (en) | 2002-02-26 | 2012-10-24 | FUJIFILM Corporation | Photosensitive resin composition |
JP3841400B2 (ja) | 2002-02-26 | 2006-11-01 | 富士写真フイルム株式会社 | ポジ型レジスト組成物 |
TW200401164A (en) * | 2002-03-01 | 2004-01-16 | Shipley Co Llc | Photoresist compositions |
TW200403522A (en) * | 2002-03-01 | 2004-03-01 | Shipley Co Llc | Photoresist compositions |
JP2005519167A (ja) * | 2002-03-01 | 2005-06-30 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | ミクロ平版印刷法のための弗素化コポリマー |
JP4010160B2 (ja) | 2002-03-04 | 2007-11-21 | 旭硝子株式会社 | レジスト組成物 |
US7160666B2 (en) | 2002-03-06 | 2007-01-09 | Fuji Photo Film Co., Ltd. | Photosensitive resin composition |
TWI299816B (en) * | 2002-04-03 | 2008-08-11 | Sumitomo Chemical Co | Positive resist composition |
JP4007581B2 (ja) | 2002-04-19 | 2007-11-14 | 富士フイルム株式会社 | ポジ型レジスト組成物 |
KR100955006B1 (ko) | 2002-04-26 | 2010-04-27 | 후지필름 가부시키가이샤 | 포지티브 레지스트 조성물 |
KR100955454B1 (ko) | 2002-05-31 | 2010-04-29 | 후지필름 가부시키가이샤 | 포지티브 레지스트 조성물 |
US7727777B2 (en) * | 2002-05-31 | 2010-06-01 | Ebrahim Andideh | Forming ferroelectric polymer memories |
TWI284779B (en) | 2002-06-07 | 2007-08-01 | Fujifilm Corp | Photosensitive resin composition |
KR100584810B1 (ko) * | 2002-06-11 | 2006-05-30 | 주식회사 이엔에프테크놀로지 | 비닐 알킬(1-아다만틸) 에테르 및 그 제조방법 |
US20030235775A1 (en) | 2002-06-13 | 2003-12-25 | Munirathna Padmanaban | Photoresist composition for deep ultraviolet lithography comprising a mixture of photoactive compounds |
JP3986911B2 (ja) | 2002-07-15 | 2007-10-03 | 松下電器産業株式会社 | パターン形成材料及びパターン形成方法 |
AU2003259727A1 (en) * | 2002-08-09 | 2004-02-25 | E. I. Du Pont De Nemours And Company | Photoresists, fluorinated polymers and processes for 157 nm microlithography |
AU2003259728A1 (en) | 2002-08-09 | 2004-02-25 | E. I. Du Pont De Nemours And Company | Fluorinated monomers, fluorinated polymers having polycyclic groups with fused 4-membered heterocyclic rings, useful as photoresists, and processes for microlithography |
US6830871B2 (en) | 2002-08-19 | 2004-12-14 | Fuji Photo Film Co., Ltd. | Chemical amplification type resist composition |
ATE408173T1 (de) * | 2002-08-19 | 2008-09-15 | Du Pont | Fluorierte polymere, die zur verwendung als photoresists geeignet sind, und mikrolithographieverfahren |
WO2004041877A1 (ja) | 2002-11-07 | 2004-05-21 | Asahi Glass Company, Limited | 含フッ素ポリマー |
US7264913B2 (en) | 2002-11-21 | 2007-09-04 | Az Electronic Materials Usa Corp. | Antireflective compositions for photoresists |
US6790914B2 (en) * | 2002-11-29 | 2004-09-14 | Jsr Corporation | Resin film and applications thereof |
US6919160B2 (en) | 2003-02-20 | 2005-07-19 | Air Products And Chemicals, Inc. | Acrylic compounds for sub-200 nm photoresist compositions and methods for making and using same |
US20040166434A1 (en) | 2003-02-21 | 2004-08-26 | Dammel Ralph R. | Photoresist composition for deep ultraviolet lithography |
US7029832B2 (en) | 2003-03-11 | 2006-04-18 | Samsung Electronics Co., Ltd. | Immersion lithography methods using carbon dioxide |
JP4166598B2 (ja) | 2003-03-12 | 2008-10-15 | 富士フイルム株式会社 | ポジ型レジスト組成物 |
JP4115309B2 (ja) | 2003-03-24 | 2008-07-09 | 富士フイルム株式会社 | ポジ型レジスト組成物 |
WO2004088428A1 (ja) * | 2003-03-28 | 2004-10-14 | Tokyo Ohka Kogyo Co. Ltd. | ホトレジスト組成物及びそれを用いたレジストパターン形成方法 |
US7150957B2 (en) * | 2003-04-25 | 2006-12-19 | International Business Machines Corporation | Fluorinated vinyl ethers, copolymers thereof, and use in lithographic photoresist compositions |
US7867697B2 (en) | 2003-07-24 | 2011-01-11 | Fujifilm Corporation | Positive photosensitive composition and method of forming resist pattern |
JP4530751B2 (ja) * | 2003-07-24 | 2010-08-25 | 富士フイルム株式会社 | ポジ型感光性組成物及びそれを用いたパターン形成方法 |
JP2005049695A (ja) | 2003-07-30 | 2005-02-24 | Fuji Photo Film Co Ltd | ポジ型レジスト組成物 |
JP2005060664A (ja) | 2003-07-31 | 2005-03-10 | Asahi Glass Co Ltd | 含フッ素化合物、含フッ素ポリマーとその製造方法およびそれを含むレジスト組成物 |
US7138550B2 (en) | 2003-08-04 | 2006-11-21 | Air Products And Chemicals, Inc. | Bridged carbocyclic compounds and methods of making and using same |
JP4431540B2 (ja) * | 2003-10-06 | 2010-03-17 | 大日本印刷株式会社 | 防眩フィルム |
US20050170277A1 (en) * | 2003-10-20 | 2005-08-04 | Luke Zannoni | Fluorinated photoresists prepared, deposited, developed and removed in carbon dioxide |
EP1679297B1 (en) | 2003-10-31 | 2009-08-05 | Asahi Glass Company, Limited | Fluorine compound, fluoropolymer, and process for producing the same |
JP4322097B2 (ja) * | 2003-11-14 | 2009-08-26 | 東京応化工業株式会社 | El表示素子の隔壁、およびel表示素子 |
JP2005162861A (ja) * | 2003-12-02 | 2005-06-23 | Asahi Glass Co Ltd | 含フッ素ポリマー |
US7442487B2 (en) * | 2003-12-30 | 2008-10-28 | Intel Corporation | Low outgassing and non-crosslinking series of polymers for EUV negative tone photoresists |
US7081511B2 (en) | 2004-04-05 | 2006-07-25 | Az Electronic Materials Usa Corp. | Process for making polyesters |
JP4407358B2 (ja) | 2004-04-14 | 2010-02-03 | 旭硝子株式会社 | 含フッ素ポリマーおよびレジスト組成物 |
TWI322334B (en) | 2004-07-02 | 2010-03-21 | Rohm & Haas Elect Mat | Method for processing a photoresist composition in an immersion photolithography process and system and organic barrier composition used therein |
US7691556B2 (en) | 2004-09-15 | 2010-04-06 | Az Electronic Materials Usa Corp. | Antireflective compositions for photoresists |
US7595141B2 (en) | 2004-10-26 | 2009-09-29 | Az Electronic Materials Usa Corp. | Composition for coating over a photoresist pattern |
JP4424246B2 (ja) * | 2004-10-28 | 2010-03-03 | 旭硝子株式会社 | 含フッ素共重合体及びその用途 |
JP4789599B2 (ja) | 2004-12-06 | 2011-10-12 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | フォトレジスト組成物 |
EP1691238A3 (en) | 2005-02-05 | 2009-01-21 | Rohm and Haas Electronic Materials, L.L.C. | Coating compositions for use with an overcoated photoresist |
US7834209B2 (en) | 2005-06-07 | 2010-11-16 | E.I. Du Pont De Nemours And Company | Hydrofluoroalkanesulfonic acids from fluorovinyl ethers |
KR101222947B1 (ko) | 2005-06-30 | 2013-01-17 | 엘지디스플레이 주식회사 | 인쇄용 용제, 및 그를 이용한 인쇄용 패턴 조성물 및 패턴 형성방법 |
US7521170B2 (en) | 2005-07-12 | 2009-04-21 | Az Electronic Materials Usa Corp. | Photoactive compounds |
EP1762895B1 (en) | 2005-08-29 | 2016-02-24 | Rohm and Haas Electronic Materials, L.L.C. | Antireflective Hard Mask Compositions |
US7358029B2 (en) * | 2005-09-29 | 2008-04-15 | International Business Machines Corporation | Low activation energy dissolution modification agents for photoresist applications |
US7553905B2 (en) | 2005-10-31 | 2009-06-30 | Az Electronic Materials Usa Corp. | Anti-reflective coatings |
JP5114021B2 (ja) * | 2006-01-23 | 2013-01-09 | 富士フイルム株式会社 | パターン形成方法 |
TWI440978B (zh) * | 2006-02-15 | 2014-06-11 | Sumitomo Chemical Co | 化學增幅正型阻劑組合物 |
WO2007116664A1 (ja) | 2006-03-31 | 2007-10-18 | Jsr Corporation | フッ素含有重合体及び精製方法並びに感放射線性樹脂組成物 |
US7416991B2 (en) * | 2006-05-11 | 2008-08-26 | Hitachi Global Storage Technologies Netherlands B. V. | High resolution patterning of surface energy utilizing high resolution monomolecular resist for fabrication of patterned media masters |
US8637229B2 (en) | 2006-12-25 | 2014-01-28 | Fujifilm Corporation | Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method |
US8530148B2 (en) | 2006-12-25 | 2013-09-10 | Fujifilm Corporation | Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method |
JP4554665B2 (ja) | 2006-12-25 | 2010-09-29 | 富士フイルム株式会社 | パターン形成方法、該パターン形成方法に用いられる多重現像用ポジ型レジスト組成物、該パターン形成方法に用いられるネガ現像用現像液及び該パターン形成方法に用いられるネガ現像用リンス液 |
TWI374478B (en) | 2007-02-13 | 2012-10-11 | Rohm & Haas Elect Mat | Electronic device manufacture |
US7838609B2 (en) * | 2007-02-21 | 2010-11-23 | The Nippon Synthetic Chemical Industry Co., Ltd. | Polyvinyl alcohol type resin, monolayer film and laminate |
CN101308329B (zh) | 2007-04-06 | 2013-09-04 | 罗门哈斯电子材料有限公司 | 涂料组合物 |
US7923200B2 (en) | 2007-04-09 | 2011-04-12 | Az Electronic Materials Usa Corp. | Composition for coating over a photoresist pattern comprising a lactam |
US8034547B2 (en) * | 2007-04-13 | 2011-10-11 | Fujifilm Corporation | Pattern forming method, resist composition to be used in the pattern forming method, negative developing solution to be used in the pattern forming method and rinsing solution for negative development to be used in the pattern forming method |
KR100990106B1 (ko) | 2007-04-13 | 2010-10-29 | 후지필름 가부시키가이샤 | 패턴형성방법, 이 패턴형성방법에 사용되는 레지스트 조성물, 현상액 및 린스액 |
US8603733B2 (en) | 2007-04-13 | 2013-12-10 | Fujifilm Corporation | Pattern forming method, and resist composition, developer and rinsing solution used in the pattern forming method |
JP5315234B2 (ja) * | 2007-04-19 | 2013-10-16 | 旭化成イーマテリアルズ株式会社 | 凹凸形状を有する感光性樹脂版及び凸版印刷版の製造方法、並びに当該製造方法に用いる版面用処理液 |
US7985534B2 (en) | 2007-05-15 | 2011-07-26 | Fujifilm Corporation | Pattern forming method |
US8476001B2 (en) | 2007-05-15 | 2013-07-02 | Fujifilm Corporation | Pattern forming method |
US9046782B2 (en) | 2007-06-12 | 2015-06-02 | Fujifilm Corporation | Resist composition for negative tone development and pattern forming method using the same |
US8617794B2 (en) | 2007-06-12 | 2013-12-31 | Fujifilm Corporation | Method of forming patterns |
JP4590431B2 (ja) * | 2007-06-12 | 2010-12-01 | 富士フイルム株式会社 | パターン形成方法 |
US8632942B2 (en) | 2007-06-12 | 2014-01-21 | Fujifilm Corporation | Method of forming patterns |
JP4617337B2 (ja) | 2007-06-12 | 2011-01-26 | 富士フイルム株式会社 | パターン形成方法 |
JP5433181B2 (ja) * | 2008-03-28 | 2014-03-05 | 富士フイルム株式会社 | ネガ型現像用レジスト組成物及びこれを用いたパターン形成方法 |
TWI518456B (zh) * | 2008-04-21 | 2016-01-21 | 住友化學股份有限公司 | 化學放大型正阻劑組成物 |
US8062830B2 (en) * | 2008-04-21 | 2011-11-22 | Sumitomo Chemical Company, Limited | Chemically amplified positive resist composition |
WO2009143357A2 (en) * | 2008-05-23 | 2009-11-26 | Cornell University | Orthogonal processing of organic materials used in electronic and electrical devices |
US7745077B2 (en) | 2008-06-18 | 2010-06-29 | Az Electronic Materials Usa Corp. | Composition for coating over a photoresist pattern |
KR20110033920A (ko) | 2008-06-20 | 2011-04-01 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | 중합체 주형 및 그로부터 제조된 용품 |
US9370876B2 (en) | 2008-06-20 | 2016-06-21 | 3M Innovative Properties Company | Molded microstructured articles and method of making same |
US20100136477A1 (en) * | 2008-12-01 | 2010-06-03 | Ng Edward W | Photosensitive Composition |
EP2204694A1 (en) | 2008-12-31 | 2010-07-07 | Rohm and Haas Electronic Materials LLC | Compositions and processes for photolithography |
EP2204392A1 (en) | 2008-12-31 | 2010-07-07 | Rohm and Haas Electronic Materials LLC | Compositions and processes for photolithography |
KR20120130782A (ko) * | 2010-03-16 | 2012-12-03 | 다이킨 고교 가부시키가이샤 | 경화성 수지 조성물, 경화물 및 불소 함유 중합체 |
JP5602475B2 (ja) | 2010-03-31 | 2014-10-08 | Hoya株式会社 | レジストパターンの形成方法及びモールドの製造方法 |
JP5619458B2 (ja) * | 2010-03-31 | 2014-11-05 | Hoya株式会社 | レジストパターンの形成方法及びモールドの製造方法 |
JP5716751B2 (ja) | 2010-10-04 | 2015-05-13 | Jsr株式会社 | パターン形成方法及び感放射線性樹脂組成物 |
KR101843601B1 (ko) * | 2010-10-15 | 2018-03-29 | 제이에스알 가부시끼가이샤 | 레지스트 패턴 형성 방법 및 감방사선성 수지 조성물 |
KR101907705B1 (ko) | 2010-10-22 | 2018-10-12 | 제이에스알 가부시끼가이샤 | 패턴 형성 방법 및 감방사선성 조성물 |
JP5837812B2 (ja) * | 2010-12-27 | 2015-12-24 | Hoya株式会社 | レジスト現像剤、レジストパターンの形成方法及びモールドの製造方法 |
JP5837811B2 (ja) * | 2010-12-27 | 2015-12-24 | Hoya株式会社 | レジスト現像剤、レジストパターンの形成方法及びモールドの製造方法 |
JP5798466B2 (ja) * | 2010-12-27 | 2015-10-21 | Hoya株式会社 | レジスト現像剤、レジストパターンの形成方法及びモールドの製造方法 |
EP2472329B1 (en) | 2010-12-31 | 2013-06-05 | Rohm and Haas Electronic Materials LLC | Coating compositions for use with an overcoated photoresist |
JP5482722B2 (ja) * | 2011-04-22 | 2014-05-07 | 信越化学工業株式会社 | パターン形成方法 |
US9011591B2 (en) | 2011-09-21 | 2015-04-21 | Dow Global Technologies Llc | Compositions and antireflective coatings for photolithography |
US10738174B2 (en) | 2012-04-23 | 2020-08-11 | International Business Machines Corporation | Aqueous soluble ferrimagnets stabilized by block copolymers |
JP6297269B2 (ja) | 2012-06-28 | 2018-03-20 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | ポリマー組成物、このポリマー組成物を含むフォトレジスト、およびこのフォトレジストを含むコーティングされた物品 |
JP2015028576A (ja) * | 2013-07-01 | 2015-02-12 | 富士フイルム株式会社 | パターン形成方法 |
US9698014B2 (en) * | 2014-07-30 | 2017-07-04 | Taiwan Semiconductor Manufacturing Co., Ltd | Photoresist composition to reduce photoresist pattern collapse |
CN105693102B (zh) * | 2016-01-12 | 2018-08-24 | 中国建筑材料科学研究总院 | 石英玻璃酸刻蚀用掩膜及石英玻璃摆片的酸刻蚀方法 |
JP7395278B2 (ja) * | 2019-07-31 | 2023-12-11 | 日東電工株式会社 | 感光性組成物、デバイス及びデバイスの製造方法 |
Family Cites Families (71)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3287327A (en) * | 1961-07-27 | 1966-11-22 | Union Carbide Corp | Copolymers of bicyclo [2.2.1] hepta-2, 5-diene |
GB1069737A (en) * | 1963-12-13 | 1967-05-24 | Montedison Spa | Vulcanizable olefin copolymers |
US3444148A (en) | 1964-10-05 | 1969-05-13 | Du Pont | Copolymers of selected polyfluoroper-haloketone adducts with other selected ethylenic compounds |
US3650885A (en) | 1969-04-04 | 1972-03-21 | Sun Chemical Corp | Radiation-curable compositions |
JPS576573B2 (zh) | 1973-11-05 | 1982-02-05 | ||
JPS56139515A (en) | 1980-03-31 | 1981-10-31 | Daikin Ind Ltd | Polyfluoroalkyl acrylate copolymer |
US4382985A (en) | 1980-10-11 | 1983-05-10 | Daikin Kogyo Co., Ltd. | Process for forming film of fluoroalkyl acrylate polymer on substrate and process for preparing patterned resist from the film |
JPS589146A (ja) | 1981-07-09 | 1983-01-19 | Nippon Paint Co Ltd | 水不要平版用版材 |
JPS5833246A (ja) | 1981-08-24 | 1983-02-26 | Oki Electric Ind Co Ltd | ポジ型レジストのパタ−ン形成方法 |
EP0090089B1 (en) | 1981-12-19 | 1988-10-05 | Daikin Kogyo Co., Ltd. | Resist material and process for forming fine resist pattern |
DE3246825A1 (de) | 1982-02-24 | 1983-09-01 | Max Planck Gesellschaft zur Förderung der Wissenschaften e.V., 3400 Göttingen | Positives resistmaterial |
US4538250A (en) * | 1982-12-27 | 1985-08-27 | Allied Corporation | Construction and method for elongated towed underwater sonar |
DE3563273D1 (en) | 1984-03-19 | 1988-07-14 | Nippon Oil Co Ltd | Novel electron beam resist materials |
JPH0621109B2 (ja) | 1984-07-09 | 1994-03-23 | ダイキン工業株式会社 | 含フツ素アクリル酸エステル |
EP0174494B1 (de) | 1984-08-10 | 1989-06-07 | Siemens Aktiengesellschaft | Thermostabiles, durch Bestrahlung vernetzbares Polymersystem für mikroelektronische Anwendung |
US4876322A (en) | 1984-08-10 | 1989-10-24 | Siemens Aktiengesselschaft | Irradiation cross-linkable thermostable polymer system, for microelectronic applications |
US4751166A (en) * | 1984-10-22 | 1988-06-14 | Hoechst Celanese Corp. | Negative working diazo color proofing method |
FR2573069B1 (fr) | 1984-11-09 | 1987-07-17 | Inst Nat Rech Chimique | Nouveaux derives halogenocyclopropaniques, notamment acetals d'halogeno-2 fluoro-2 cyclopropanones, leur procede d'obtention et leur application a la fabrication de fluoro-2 acrylates d'alkyle ou d'aryle |
EP0230656B1 (en) | 1985-12-25 | 1991-03-13 | Tosoh Corporation | Halogen-containing polyacrylate derivatives |
JPS62186907A (ja) | 1986-02-13 | 1987-08-15 | Agency Of Ind Science & Technol | 液体混合物の分離膜 |
EP0240726A3 (en) | 1986-03-05 | 1987-12-09 | Daikin Industries, Limited | Resist material |
JPS62223750A (ja) | 1986-03-26 | 1987-10-01 | Toray Ind Inc | 放射線感応ポジ型レジストおよび該レジスト組成物 |
US4965158A (en) * | 1986-08-01 | 1990-10-23 | Xerox Corporation | Toner compositions with modified charge enhancing additives |
JPH0778629B2 (ja) | 1986-12-19 | 1995-08-23 | ミノルタ株式会社 | ポジ型レジスト膜及びそのレジストパターンの形成方法 |
JPS63158541A (ja) | 1986-12-23 | 1988-07-01 | Tosoh Corp | レジストパタ−ン形成方法 |
JPH087441B2 (ja) | 1986-12-29 | 1996-01-29 | 凸版印刷株式会社 | ポジ型高感度放射線感応性レジスト |
JPS6429837A (en) | 1987-07-27 | 1989-01-31 | Tosoh Corp | Method for forming positive resist pattern |
JPS6429837U (zh) | 1987-08-13 | 1989-02-22 | ||
JPS6449039A (en) | 1987-08-20 | 1989-02-23 | Tosoh Corp | Method for forming positive resist pattern |
EP0380667A4 (en) | 1987-10-07 | 1991-04-24 | Terumo Kabushiki Kaisha | Ultraviolet-absorbing polymer material and photoetching process |
JPH01118127A (ja) | 1987-10-31 | 1989-05-10 | Fujitsu Ltd | パターン形成方法 |
FR2623510B1 (fr) | 1987-11-20 | 1992-10-23 | Ecole Nale Superieure Chimie | Polymeres a base d'halo et de methacrylates de pentafluorophenyle et leur application a la realisation de fibres optiques, de photoresists positifs, de verres organiques et de resines pour disques optiques |
JPH01276129A (ja) | 1988-04-27 | 1989-11-06 | Sekisui Chem Co Ltd | 感光性樹脂組成物 |
JPH02202904A (ja) | 1989-02-02 | 1990-08-13 | Daikin Ind Ltd | 含フツ素メタクリル酸エステル系重合体及びレジスト材料 |
WO1991000880A1 (en) | 1989-07-07 | 1991-01-24 | Daikin Industries, Ltd. | Fluorinated copolymer and method of producing the same |
JP2643599B2 (ja) * | 1989-07-07 | 1997-08-20 | ダイキン工業株式会社 | 含フッ素共重合体およびその製造方法 |
US5229473A (en) * | 1989-07-07 | 1993-07-20 | Daikin Industries Ltd. | Fluorine-containing copolymer and method of preparing the same |
JP2659025B2 (ja) | 1990-01-24 | 1997-09-30 | 富士通株式会社 | 放射線用レジスト及びその製造方法及びパターン形成方法 |
DE4002397A1 (de) | 1990-01-27 | 1991-08-01 | Hoechst Ag | Strahlungsempfindliches gemisch und hieraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial |
JPH03226756A (ja) | 1990-01-31 | 1991-10-07 | Daikin Ind Ltd | レジスト、その製造方法およびそれを用いるレジストパターンの形成方法 |
JPH04171452A (ja) | 1990-11-02 | 1992-06-18 | Daikin Ind Ltd | レジストおよびそれを用いる微細レジストパターンの形成法 |
JP3032851B2 (ja) | 1991-11-08 | 2000-04-17 | 株式会社野田スクリーン | スクリーン版用樹脂組成物、スクリーン版用フィルム、及びスクリーン版 |
DE4207263A1 (de) | 1992-03-07 | 1993-09-09 | Hoechst Ag | Niedermolekulare saeurespaltbare verbindungen mit 2,2-bis-trifluormethyl-oxaethano-brueckengliedern und deren verwendung |
DE4207264B4 (de) | 1992-03-07 | 2005-07-28 | Clariant Gmbh | Negativ arbeitendes strahlungsempfindliches Gemisch und damit hergestelltes Aufzeichnungsmaterial |
DE4319178C2 (de) | 1992-06-10 | 1997-07-17 | Fujitsu Ltd | Resist-Zusammensetzung enthaltend ein Polymermaterial und einen Säuregenerator |
US5426164A (en) | 1992-12-24 | 1995-06-20 | The Dow Chemical Company | Photodefinable polymers containing perfluorocyclobutane groups |
JP3277114B2 (ja) | 1995-02-17 | 2002-04-22 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 陰画調レジスト像の作製方法 |
JP3226756B2 (ja) | 1995-06-06 | 2001-11-05 | 本田技研工業株式会社 | サッシレスドアのガラスの組付け位置調整方法及び調整治具 |
JP3046225B2 (ja) * | 1995-06-15 | 2000-05-29 | 東京応化工業株式会社 | ポジ型レジスト膜形成用塗布液 |
JPH0943856A (ja) | 1995-07-26 | 1997-02-14 | Asahi Glass Co Ltd | 含フッ素重合体膜にパターンを形成する方法 |
JPH0943845A (ja) | 1995-07-31 | 1997-02-14 | Fuji Photo Film Co Ltd | ネガ型画像記録材料 |
JP3804138B2 (ja) * | 1996-02-09 | 2006-08-02 | Jsr株式会社 | ArFエキシマレーザー照射用感放射線性樹脂組成物 |
KR100536824B1 (ko) | 1996-03-07 | 2006-03-09 | 스미토모 베이클라이트 가부시키가이샤 | 산불안정성펜던트기를지닌다중고리중합체를포함하는포토레지스트조성물 |
US5843624A (en) | 1996-03-08 | 1998-12-01 | Lucent Technologies Inc. | Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material |
JP3766140B2 (ja) * | 1996-06-21 | 2006-04-12 | 笠尾 敦司 | 画像加工合成方法およびその装置 |
JPH10142779A (ja) | 1996-11-05 | 1998-05-29 | Fuji Photo Film Co Ltd | 感光性樹脂組成物及び感光性多層シート |
US6110640A (en) | 1996-11-14 | 2000-08-29 | Fuji Photo Film Co., Ltd. | Photosensitive composition |
US5962612A (en) * | 1996-11-28 | 1999-10-05 | Asahi Glass Company Ltd. | Fluorine-containing copolymer having rings on its main chain |
JP3851398B2 (ja) | 1997-01-27 | 2006-11-29 | 富士写真フイルム株式会社 | ポジ型感光性組成物 |
US5876897A (en) | 1997-03-07 | 1999-03-02 | Clariant Finance (Bvi) Limited | Positive photoresists containing novel photoactive compounds |
JP3650985B2 (ja) * | 1997-05-22 | 2005-05-25 | Jsr株式会社 | ネガ型感放射線性樹脂組成物およびパターン製造法 |
EP0887706A1 (en) * | 1997-06-25 | 1998-12-30 | Wako Pure Chemical Industries Ltd | Resist composition containing specific cross-linking agent |
US6143472A (en) * | 1998-11-18 | 2000-11-07 | Wako Pure Chemical Industries, Ltd. | Resist composition and a method for formation of a pattern using the composition |
JP4327360B2 (ja) * | 1998-09-23 | 2009-09-09 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | ホトレジスト、ポリマーおよびマイクロリソグラフィの方法 |
US6884562B1 (en) * | 1998-10-27 | 2005-04-26 | E. I. Du Pont De Nemours And Company | Photoresists and processes for microlithography |
US6790587B1 (en) * | 1999-05-04 | 2004-09-14 | E. I. Du Pont De Nemours And Company | Fluorinated polymers, photoresists and processes for microlithography |
DE60044493D1 (de) | 1999-05-04 | 2010-07-15 | Du Pont | Fluorierte photoresists und verfahren für die mikrolithographie |
CN1224620C (zh) | 1999-05-04 | 2005-10-26 | 纳幕尔杜邦公司 | 生产氟化环氧化物的方法和有关聚合物 |
EP1278786B1 (en) * | 2000-05-05 | 2006-01-04 | E.I. Du Pont De Nemours And Company | Copolymers for photoresists and processes therefor |
EP1438635A1 (en) * | 2001-10-26 | 2004-07-21 | E. I. du Pont de Nemours and Company | Fluorinated polymers having ester groups and photoresists for microlithography |
US6875555B1 (en) * | 2003-09-16 | 2005-04-05 | E.I. Du Pont De Nemours And Company | Preparation and use of EXO-2-fluoroalkyl(bicyclo[2.2.1] hept-5-enes) |
-
1999
- 1999-09-21 JP JP2000571312A patent/JP4327360B2/ja not_active Expired - Lifetime
- 1999-09-21 CN CNB998113069A patent/CN1253759C/zh not_active Expired - Lifetime
- 1999-09-21 IL IL14180399A patent/IL141803A0/xx unknown
- 1999-09-21 US US09/806,096 patent/US6593058B1/en not_active Expired - Lifetime
- 1999-09-21 WO PCT/US1999/021912 patent/WO2000017712A1/en active IP Right Grant
- 1999-09-21 EP EP99969504A patent/EP1131677B1/en not_active Expired - Lifetime
- 1999-09-21 AU AU60560/99A patent/AU6056099A/en not_active Abandoned
- 1999-09-21 DE DE69926532T patent/DE69926532T2/de not_active Expired - Lifetime
- 1999-09-28 TW TW088116348A patent/TWI221944B/zh active
-
2002
- 2002-03-04 HK HK02101647.3A patent/HK1041055A1/zh unknown
-
2003
- 2003-05-14 US US10/437,760 patent/US7276323B2/en not_active Expired - Lifetime
-
2009
- 2009-04-08 JP JP2009094338A patent/JP2009161770A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
JP2009161770A (ja) | 2009-07-23 |
JP4327360B2 (ja) | 2009-09-09 |
CN1253759C (zh) | 2006-04-26 |
TWI221944B (en) | 2004-10-11 |
CN1319199A (zh) | 2001-10-24 |
EP1131677B1 (en) | 2005-08-03 |
WO2000017712A1 (en) | 2000-03-30 |
US7276323B2 (en) | 2007-10-02 |
US20040023152A1 (en) | 2004-02-05 |
US6593058B1 (en) | 2003-07-15 |
DE69926532T2 (de) | 2006-06-01 |
IL141803A0 (en) | 2002-03-10 |
AU6056099A (en) | 2000-04-10 |
EP1131677A1 (en) | 2001-09-12 |
DE69926532D1 (de) | 2005-09-08 |
JP2002525683A (ja) | 2002-08-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
IL141803A0 (en) | Photoresists, polymers and processes for microlithography | |
HK1047797A1 (en) | Fluorinated polymers, photoresists and processes for microlithography | |
HK1039377A1 (zh) | 為微平版印刷術而設的光致抗蝕劑及方法 | |
AU1603101A (en) | Nitrile/fluoroalcohol-containing photoresists and associated processes for microlithography | |
AU2002225766A1 (en) | Protecting groups in polymers, photoresists and processes for microlithography | |
AU2001261205A1 (en) | Copolymers for photoresists and processes therefor | |
EP0837162A4 (en) | MULTI-FILAMENT CLAVED THREAD TAPE, METHOD AND DEVICE FOR MANUFACTURING THE SAME | |
AU5653699A (en) | Parallel link mechanism, exposure system and method of manufacturing the same, and method of manufacturing devices | |
EP1153942A4 (en) | POLYMER, PROCESS FOR PRODUCING POLYMER, AND COMPOSITION | |
AU1176199A (en) | Aligner, exposure method and device manufacturing method | |
AU2747999A (en) | Projection exposure method and system | |
AU3193800A (en) | Exposure method, illuminating device, and exposure system | |
GB9903304D0 (en) | Continuous polymerization process | |
ZA98417B (en) | Gas phase polymerization process. | |
AU2001296737A1 (en) | Co2-processes photoresists, polymers, and photoactive compounds for microlithography | |
EP1153076A4 (en) | POLYMER LATEX WHICH IS USED TO ABSORB ULTRAVIOLET RAYS IN DIFFERENT SUBSTRATES | |
AU1890999A (en) | Exposure system, exposure apparatus, and coating developing exposure apparatus | |
DE69933918D1 (de) | Lithographischer Projektionsapparat | |
GB2345286B (en) | Photoresist copolymer, process for preparing the same and photoresist composition comprising the same | |
AU9184998A (en) | Processes for producing n,n-dialkylallylamine polymers and n,n-dialkylallylaminepolymers | |
GB2336592B (en) | Polymer for photoresist,photoresist composition containing the same,and preparation method thereof | |
AU2691800A (en) | Exposure system, lithography system and conveying method, and device production method and device | |
AU1172699A (en) | Vibration eliminator, aligner and projection exposure method | |
AU1890699A (en) | Exposure method and lithography system, exposure apparatus and method of producing the apparatus, and method of producing device | |
EP1091258A4 (en) | POLYMERIZABLE TONER AND PROCESS FOR PRODUCING THE SAME |