GB1459839A - Dual growth rate method of depositing epitaxial crystalline layers - Google Patents

Dual growth rate method of depositing epitaxial crystalline layers

Info

Publication number
GB1459839A
GB1459839A GB1906074A GB1906074A GB1459839A GB 1459839 A GB1459839 A GB 1459839A GB 1906074 A GB1906074 A GB 1906074A GB 1906074 A GB1906074 A GB 1906074A GB 1459839 A GB1459839 A GB 1459839A
Authority
GB
United Kingdom
Prior art keywords
stage
rate
growth rate
rate method
crystalline layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1906074A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of GB1459839A publication Critical patent/GB1459839A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/007—Autodoping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/025—Deposition multi-step
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/129—Pulse doping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/15—Silicon on sapphire SOS

Abstract

1459839 Silicon RCA CORPORATION 1 May 1974 [17 Aug 1973] 19060/74 Heading C1A [Also in Division C7] In a two-stage epitaxial deposition of, e.g. Si on a substrate of, e.g. sapphire or spinel by decomposing a vapour, e.g. silane, the first stage takes place at a rate of at least 4 Ám. per min., and the second stage at a rate of not more than 0À5 Ám. per min. Semi-conductor substrates 26 mounted on a rotatable support are heated by R.F. to 1000‹ C., and a valve opened to allow the reaction gases to flow from a pressurized chamber to give the initial fast rate of growth. After this initial stage, a further valve is opened to give the slower rate of growth. The gas mixture may contain diborane or arsine as dopants.
GB1906074A 1973-08-17 1974-05-01 Dual growth rate method of depositing epitaxial crystalline layers Expired GB1459839A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US389192A US3885061A (en) 1973-08-17 1973-08-17 Dual growth rate method of depositing epitaxial crystalline layers

Publications (1)

Publication Number Publication Date
GB1459839A true GB1459839A (en) 1976-12-31

Family

ID=23537232

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1906074A Expired GB1459839A (en) 1973-08-17 1974-05-01 Dual growth rate method of depositing epitaxial crystalline layers

Country Status (14)

Country Link
US (1) US3885061A (en)
JP (1) JPS547556B2 (en)
BE (1) BE814071A (en)
CA (1) CA1025334A (en)
CH (1) CH590084A5 (en)
DE (1) DE2422508C3 (en)
FR (1) FR2245406B1 (en)
GB (1) GB1459839A (en)
IN (1) IN141844B (en)
IT (1) IT1012165B (en)
NL (1) NL7406548A (en)
SE (1) SE401463B (en)
SU (1) SU612610A3 (en)
YU (1) YU39168B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4265991A (en) 1977-12-22 1981-05-05 Canon Kabushiki Kaisha Electrophotographic photosensitive member and process for production thereof
GB2185758A (en) * 1985-12-28 1987-07-29 Canon Kk Method for forming deposited film

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3986192A (en) * 1975-01-02 1976-10-12 Bell Telephone Laboratories, Incorporated High efficiency gallium arsenide impatt diodes
US4201604A (en) * 1975-08-13 1980-05-06 Raytheon Company Process for making a negative resistance diode utilizing spike doping
DE2943634C2 (en) * 1979-10-29 1983-09-29 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Epitaxial reactor
US4279688A (en) * 1980-03-17 1981-07-21 Rca Corporation Method of improving silicon crystal perfection in silicon on sapphire devices
US4596208A (en) * 1984-11-05 1986-06-24 Spire Corporation CVD reaction chamber
US4772356A (en) * 1986-07-03 1988-09-20 Emcore, Inc. Gas treatment apparatus and method
US4838983A (en) * 1986-07-03 1989-06-13 Emcore, Inc. Gas treatment apparatus and method
US4775641A (en) * 1986-09-25 1988-10-04 General Electric Company Method of making silicon-on-sapphire semiconductor devices
JPS63237517A (en) * 1987-03-26 1988-10-04 Canon Inc Selective formation of iii-v compound film
US5281283A (en) * 1987-03-26 1994-01-25 Canon Kabushiki Kaisha Group III-V compound crystal article using selective epitaxial growth
CA1332039C (en) * 1987-03-26 1994-09-20 Takao Yonehara Ii - vi group compound crystal article and process for producing the same
CA1321121C (en) * 1987-03-27 1993-08-10 Hiroyuki Tokunaga Process for producing compound semiconductor and semiconductor device using compound semiconductor obtained by same
US5304820A (en) * 1987-03-27 1994-04-19 Canon Kabushiki Kaisha Process for producing compound semiconductor and semiconductor device using compound semiconductor obtained by same
JPH01161826A (en) * 1987-12-18 1989-06-26 Toshiba Corp Vapor phase epitaxial growth method
US5104690A (en) * 1990-06-06 1992-04-14 Spire Corporation CVD thin film compounds
USH1145H (en) 1990-09-25 1993-03-02 Sematech, Inc. Rapid temperature response wafer chuck
JP2000223419A (en) 1998-06-30 2000-08-11 Sony Corp Method of forming single crystal silicon layer, and semiconductor device and manufacture thereof
RU2618279C1 (en) * 2016-06-23 2017-05-03 Акционерное общество "Эпиэл" Method of manufacturing the epitaxial layer of silicon on a dielectric substrate
CN116884832B (en) * 2023-09-06 2023-12-15 合肥晶合集成电路股份有限公司 Semiconductor device and method for manufacturing the same

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3189494A (en) * 1963-08-22 1965-06-15 Texas Instruments Inc Epitaxial crystal growth onto a stabilizing layer which prevents diffusion from the substrate
US3663319A (en) * 1968-11-20 1972-05-16 Gen Motors Corp Masking to prevent autodoping of epitaxial deposits
US3669769A (en) * 1970-09-29 1972-06-13 Ibm Method for minimizing autodoping in epitaxial deposition
US3765960A (en) * 1970-11-02 1973-10-16 Ibm Method for minimizing autodoping in epitaxial deposition
JPS5113607B2 (en) * 1971-08-24 1976-05-01

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4265991A (en) 1977-12-22 1981-05-05 Canon Kabushiki Kaisha Electrophotographic photosensitive member and process for production thereof
US4507375A (en) * 1977-12-22 1985-03-26 Canon Kabushiki Kaisha Electrophotographic photosensitive member and process for production thereof
GB2185758A (en) * 1985-12-28 1987-07-29 Canon Kk Method for forming deposited film
GB2185758B (en) * 1985-12-28 1990-09-05 Canon Kk Method for forming deposited film

Also Published As

Publication number Publication date
SE401463B (en) 1978-05-16
US3885061A (en) 1975-05-20
FR2245406A1 (en) 1975-04-25
FR2245406B1 (en) 1982-09-24
BE814071A (en) 1974-08-16
DE2422508B2 (en) 1978-11-23
CH590084A5 (en) 1977-07-29
YU223674A (en) 1982-05-31
AU6895474A (en) 1975-11-20
DE2422508A1 (en) 1975-03-13
CA1025334A (en) 1978-01-31
JPS5046481A (en) 1975-04-25
SU612610A3 (en) 1978-06-25
JPS547556B2 (en) 1979-04-07
SE7406350L (en) 1975-02-18
NL7406548A (en) 1975-02-19
YU39168B (en) 1984-08-31
DE2422508C3 (en) 1979-08-02
IT1012165B (en) 1977-03-10
IN141844B (en) 1977-04-23

Similar Documents

Publication Publication Date Title
GB1459839A (en) Dual growth rate method of depositing epitaxial crystalline layers
US3956032A (en) Process for fabricating SiC semiconductor devices
GB1470614A (en) Process for deposition of polycrystalline silicon
JPH01162326A (en) Manufacture of beta-silicon carbide layer
GB1536586A (en) Method of manufacturing single crystals of gallium nitride by growth from the vapour phase
GB1054518A (en)
SE9500326D0 (en) Method for protecting the susceptor during epitaxial growth by CVD and a device for epitaxial growth by CVD
GB1490665A (en) Method of growing epitaxial layers of silicon
GB1368315A (en) Method for producing semiconductor on-insulator electronic devices
IE39656B1 (en) Improvements in or relating to reducing boundary charges in semiconductor layers grown on a substrate
GB1387023A (en) Vapour deposition
GB1328170A (en) Epitaxial deposition
GB1260233A (en) Improvements in or relating to the epitaxial deposition of crystalline material from the gas phase
GB1134964A (en) Improvements in or relating to the production of layers of a silicon or germanium nitrogen compound on semiconductor crystals
GB1342542A (en) Epitaxial deposition
US5098857A (en) Method of making semi-insulating gallium arsenide by oxygen doping in metal-organic vapor phase epitaxy
GB1518564A (en) Method for the low pressure pyrolytic deposition of silicon nitride
GB1406760A (en) Depositing semiconductor material
JPS54102295A (en) Epitaxial crowth method
Tsang Chemical beam epitaxy of InGaAs
JPS54106100A (en) Vapor phase chemically depositing method for silicon carbide
US5256595A (en) Method of growing device quality InP onto an InP substrate using an organometallic precursor in a hot wall reactor
JPS6489320A (en) Vapor growth method
JPS5553415A (en) Selective epitaxial growing
FR2443137A1 (en) Mfr. technique for epitaxial layers of semiconductor material - includes using homogenising chamber for carrier gas and deposited material to improve uniformity of deposition

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee