GB1260233A - Improvements in or relating to the epitaxial deposition of crystalline material from the gas phase - Google Patents

Improvements in or relating to the epitaxial deposition of crystalline material from the gas phase

Info

Publication number
GB1260233A
GB1260233A GB2816169A GB2816169A GB1260233A GB 1260233 A GB1260233 A GB 1260233A GB 2816169 A GB2816169 A GB 2816169A GB 2816169 A GB2816169 A GB 2816169A GB 1260233 A GB1260233 A GB 1260233A
Authority
GB
United Kingdom
Prior art keywords
crystalline material
gas
deposition
epitaxial deposition
zone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2816169A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of GB1260233A publication Critical patent/GB1260233A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating

Abstract

1,260,233. Epitaxial deposition. SIEMENS A.G. June 4, 1969 [June 5, 1968], No.28161/69. Heading C7F. In a process for the epitaxial deposition of a crystalline material (e.g. a semi-conductor such as Si or Ge) from a reaction gas (such as a hydrogen/halide mixture) on to a substrate (particularly a semi-conductor such as Si) the substrate body 14 is conveyed on a transport device 10 into a high temperature zone I of a reaction vessel in which deposition of the crystalline material takes place and is then conveyed on said transport device 10 out of said vessel. Reaction gas is fed in at 3, and exists depleted at 4, and etching gas, e.g. HCl may be fed in at 16 to etch the substrates in zone II prior to coating. Gas blankets provided by passage of high-pressure or velocity gas from inlets 5, 5<SP>1</SP> to outlets 6, 6<SP>1</SP>, isolate the deposition zone from the atmosphere. Heating is provided by furnace 2 and the transporter means are trucks 10 moving on tracks, the trucks being made of, or coated with, SiO 2 , SiC, Si 3 N 4 or Al 2 O 3 .
GB2816169A 1968-06-05 1969-06-04 Improvements in or relating to the epitaxial deposition of crystalline material from the gas phase Expired GB1260233A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19681769520 DE1769520A1 (en) 1968-06-05 1968-06-05 Process for the epitaxial deposition of crystalline material from the gas phase, in particular for semiconductor purposes

Publications (1)

Publication Number Publication Date
GB1260233A true GB1260233A (en) 1972-01-12

Family

ID=5700164

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2816169A Expired GB1260233A (en) 1968-06-05 1969-06-04 Improvements in or relating to the epitaxial deposition of crystalline material from the gas phase

Country Status (8)

Country Link
JP (1) JPS5149191B1 (en)
AT (1) AT288811B (en)
CH (1) CH521163A (en)
DE (1) DE1769520A1 (en)
FR (1) FR1597032A (en)
GB (1) GB1260233A (en)
NL (1) NL6906275A (en)
SE (1) SE356905B (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2162367A (en) * 1984-07-23 1986-01-29 Int Standard Electric Corp System for producing semiconductor layer structures by way of epitaxial growth
GB2164357A (en) * 1984-09-13 1986-03-19 Toshiba Ceramics Co Susceptor for supporting a silicon wafer
GB2196650A (en) * 1986-10-27 1988-05-05 Prutec Ltd Cadmium sulphide solar cells
GB2326649A (en) * 1997-06-27 1998-12-30 Samsung Electronics Co Ltd Manufacturing silica film in a continuous process

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4096821A (en) * 1976-12-13 1978-06-27 Westinghouse Electric Corp. System for fabricating thin-film electronic components
DE2722545C2 (en) * 1977-05-18 1984-03-08 Kurt Dr.-Ing. 7802 Merzhausen Heber Diffusion furnace for the treatment of semiconductor substrates
DE2800574A1 (en) * 1978-01-07 1979-07-12 Stanley Electric Co Ltd Ear examination instrument with needle like probe - has battery housed in with socket to receive plug for electrode
DE2830589C2 (en) * 1978-07-12 1985-04-18 Ibm Deutschland Gmbh, 7000 Stuttgart Continuous furnace for processing semiconductor wafers
DE2849240C2 (en) * 1978-11-13 1983-01-13 Siemens Ag, 1000 Berlin Und 8000 Muenchen CVD coating device for small parts and their use
FR2498813A1 (en) * 1981-01-27 1982-07-30 Instruments Sa EQUIPMENT TREATMENT FACILITY FOR SEMICONDUCTOR PRODUCTION
DE3907610A1 (en) * 1989-03-09 1990-09-13 Telefunken Electronic Gmbh Epitaxial process
JP5698059B2 (en) * 2011-04-08 2015-04-08 株式会社日立国際電気 Substrate processing apparatus and solar cell manufacturing method

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2162367A (en) * 1984-07-23 1986-01-29 Int Standard Electric Corp System for producing semiconductor layer structures by way of epitaxial growth
AU582767B2 (en) * 1984-07-23 1989-04-13 Alcatel N.V. A vapour deposition process
US4934315A (en) * 1984-07-23 1990-06-19 Alcatel N.V. System for producing semicondutor layer structures by way of epitaxial growth
GB2164357A (en) * 1984-09-13 1986-03-19 Toshiba Ceramics Co Susceptor for supporting a silicon wafer
GB2196650A (en) * 1986-10-27 1988-05-05 Prutec Ltd Cadmium sulphide solar cells
GB2326649A (en) * 1997-06-27 1998-12-30 Samsung Electronics Co Ltd Manufacturing silica film in a continuous process
GB2326649B (en) * 1997-06-27 1999-09-01 Samsung Electronics Co Ltd Apparatus for manufacturing silica film and method for manufacturing silica film using the same
US6280525B1 (en) 1997-06-27 2001-08-28 Samsung Electronics Co., Ltd. Apparatus for manufacturing silica film

Also Published As

Publication number Publication date
AT288811B (en) 1971-03-25
DE1769520A1 (en) 1972-03-02
JPS5149191B1 (en) 1976-12-24
NL6906275A (en) 1969-12-09
SE356905B (en) 1973-06-12
CH521163A (en) 1972-04-15
FR1597032A (en) 1970-06-22

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Legal Events

Date Code Title Description
PS Patent sealed
PLNP Patent lapsed through nonpayment of renewal fees