GB1406760A - Depositing semiconductor material - Google Patents

Depositing semiconductor material

Info

Publication number
GB1406760A
GB1406760A GB2355473A GB2355473A GB1406760A GB 1406760 A GB1406760 A GB 1406760A GB 2355473 A GB2355473 A GB 2355473A GB 2355473 A GB2355473 A GB 2355473A GB 1406760 A GB1406760 A GB 1406760A
Authority
GB
United Kingdom
Prior art keywords
substrate
hydride
conductor
semi
deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2355473A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Publication of GB1406760A publication Critical patent/GB1406760A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth

Abstract

1406760 Semi-conductor vapour phase deposition PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 17 May 1973 [20 May 1972] 23554/73 Heading C1A [Also in Division C7] Semi-conductor, e.g. Si, is deposited on to a heated substrate from a gas flow containing a hydrogen halide and 0À3-10% by vol. of a hydride of the semi-conductor. The hydride may be SiH 4 or GeH 4 and the halide may be HCl or HBr, preferably in an amount 1-3 times by vol. the amount of hydride. The substrate may be a (100) face oriented Si slice or a polycrystalline Si rod or wire. In addition sapphire, MgAlO 4 , an oxide or nitride may be used as substrate. The rate of deposition may be 2-100 Ám./min. to produce layers 150-200 Á thick. Prior to deposition the substrate may be cleared by heating at 1200‹ C. in a current of H 2 /HCl. The substrate may be heated to 1050-1200‹ C. and the hydride flow may contain PH 3 or B 2 H 6 as doping agents.
GB2355473A 1972-05-20 1973-05-17 Depositing semiconductor material Expired GB1406760A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7206877A NL7206877A (en) 1972-05-20 1972-05-20

Publications (1)

Publication Number Publication Date
GB1406760A true GB1406760A (en) 1975-09-17

Family

ID=19816097

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2355473A Expired GB1406760A (en) 1972-05-20 1973-05-17 Depositing semiconductor material

Country Status (7)

Country Link
JP (1) JPS5225295B2 (en)
CA (1) CA990626A (en)
DE (1) DE2324127A1 (en)
FR (1) FR2185445B1 (en)
GB (1) GB1406760A (en)
IT (1) IT985922B (en)
NL (1) NL7206877A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0045600A1 (en) * 1980-07-28 1982-02-10 Monsanto Company Improved method for producing semiconductor grade silicon
GB2164357A (en) * 1984-09-13 1986-03-19 Toshiba Ceramics Co Susceptor for supporting a silicon wafer

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3725598B2 (en) * 1996-01-12 2005-12-14 東芝セラミックス株式会社 Epitaxial wafer manufacturing method
JP2006070342A (en) * 2004-09-03 2006-03-16 Sumitomo Electric Ind Ltd Vapor phase film deposition system, susceptor and vapor phase film deposition method
JP6333646B2 (en) 2014-07-08 2018-05-30 ビーエーエスエフ コーティングス ゲゼルシャフト ミット ベシュレンクテル ハフツングＢＡＳＦ Ｃｏａｔｉｎｇｓ ＧｍｂＨ Two-component coating composition and method for forming multilayer coating film using the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0045600A1 (en) * 1980-07-28 1982-02-10 Monsanto Company Improved method for producing semiconductor grade silicon
GB2164357A (en) * 1984-09-13 1986-03-19 Toshiba Ceramics Co Susceptor for supporting a silicon wafer

Also Published As

Publication number Publication date
JPS4943572A (en) 1974-04-24
FR2185445B1 (en) 1976-06-11
IT985922B (en) 1974-12-30
NL7206877A (en) 1973-11-22
JPS5225295B2 (en) 1977-07-06
FR2185445A1 (en) 1974-01-04
DE2324127A1 (en) 1973-12-06
CA990626A (en) 1976-06-08

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee