YU223674A - Method of depositing a composite layer of heteroexpitaxial silicon onto a heated saphire or spinel - Google Patents

Method of depositing a composite layer of heteroexpitaxial silicon onto a heated saphire or spinel

Info

Publication number
YU223674A
YU223674A YU02236/74A YU223674A YU223674A YU 223674 A YU223674 A YU 223674A YU 02236/74 A YU02236/74 A YU 02236/74A YU 223674 A YU223674 A YU 223674A YU 223674 A YU223674 A YU 223674A
Authority
YU
Yugoslavia
Prior art keywords
heteroexpitaxial
saphire
spinel
depositing
heated
Prior art date
Application number
YU02236/74A
Other versions
YU39168B (en
Inventor
J F Corboy
G W Cullen
N Pastal
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of YU223674A publication Critical patent/YU223674A/en
Publication of YU39168B publication Critical patent/YU39168B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/007—Autodoping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/025—Deposition multi-step
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/129—Pulse doping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/15—Silicon on sapphire SOS

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
YU02236/74A 1973-08-17 1974-08-15 Process for the preparation of a palladium catalyst process for the deposition of a combined layer of heteroepitaxial silicon on a heated substrate of sapphire or spine YU39168B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US389192A US3885061A (en) 1973-08-17 1973-08-17 Dual growth rate method of depositing epitaxial crystalline layers

Publications (2)

Publication Number Publication Date
YU223674A true YU223674A (en) 1982-05-31
YU39168B YU39168B (en) 1984-08-31

Family

ID=23537232

Family Applications (1)

Application Number Title Priority Date Filing Date
YU02236/74A YU39168B (en) 1973-08-17 1974-08-15 Process for the preparation of a palladium catalyst process for the deposition of a combined layer of heteroepitaxial silicon on a heated substrate of sapphire or spine

Country Status (14)

Country Link
US (1) US3885061A (en)
JP (1) JPS547556B2 (en)
BE (1) BE814071A (en)
CA (1) CA1025334A (en)
CH (1) CH590084A5 (en)
DE (1) DE2422508C3 (en)
FR (1) FR2245406B1 (en)
GB (1) GB1459839A (en)
IN (1) IN141844B (en)
IT (1) IT1012165B (en)
NL (1) NL7406548A (en)
SE (1) SE401463B (en)
SU (1) SU612610A3 (en)
YU (1) YU39168B (en)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3986192A (en) * 1975-01-02 1976-10-12 Bell Telephone Laboratories, Incorporated High efficiency gallium arsenide impatt diodes
US4201604A (en) * 1975-08-13 1980-05-06 Raytheon Company Process for making a negative resistance diode utilizing spike doping
AU530905B2 (en) * 1977-12-22 1983-08-04 Canon Kabushiki Kaisha Electrophotographic photosensitive member
DE2943634C2 (en) * 1979-10-29 1983-09-29 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Epitaxial reactor
US4279688A (en) * 1980-03-17 1981-07-21 Rca Corporation Method of improving silicon crystal perfection in silicon on sapphire devices
US4596208A (en) * 1984-11-05 1986-06-24 Spire Corporation CVD reaction chamber
GB2185758B (en) * 1985-12-28 1990-09-05 Canon Kk Method for forming deposited film
US4772356A (en) * 1986-07-03 1988-09-20 Emcore, Inc. Gas treatment apparatus and method
US4838983A (en) * 1986-07-03 1989-06-13 Emcore, Inc. Gas treatment apparatus and method
US4775641A (en) * 1986-09-25 1988-10-04 General Electric Company Method of making silicon-on-sapphire semiconductor devices
CA1332039C (en) * 1987-03-26 1994-09-20 Takao Yonehara Ii - vi group compound crystal article and process for producing the same
US5281283A (en) * 1987-03-26 1994-01-25 Canon Kabushiki Kaisha Group III-V compound crystal article using selective epitaxial growth
JPS63237517A (en) * 1987-03-26 1988-10-04 Canon Inc Selective formation of iii-v compound film
CA1321121C (en) * 1987-03-27 1993-08-10 Hiroyuki Tokunaga Process for producing compound semiconductor and semiconductor device using compound semiconductor obtained by same
US5304820A (en) * 1987-03-27 1994-04-19 Canon Kabushiki Kaisha Process for producing compound semiconductor and semiconductor device using compound semiconductor obtained by same
JPH01161826A (en) * 1987-12-18 1989-06-26 Toshiba Corp Vapor phase epitaxial growth method
US5104690A (en) * 1990-06-06 1992-04-14 Spire Corporation CVD thin film compounds
USH1145H (en) 1990-09-25 1993-03-02 Sematech, Inc. Rapid temperature response wafer chuck
JP2000223419A (en) 1998-06-30 2000-08-11 Sony Corp Method of forming single crystal silicon layer, and semiconductor device and manufacture thereof
RU2618279C1 (en) * 2016-06-23 2017-05-03 Акционерное общество "Эпиэл" Method of manufacturing the epitaxial layer of silicon on a dielectric substrate
CN116884832B (en) * 2023-09-06 2023-12-15 合肥晶合集成电路股份有限公司 Semiconductor device and method for manufacturing the same

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3189494A (en) * 1963-08-22 1965-06-15 Texas Instruments Inc Epitaxial crystal growth onto a stabilizing layer which prevents diffusion from the substrate
US3663319A (en) * 1968-11-20 1972-05-16 Gen Motors Corp Masking to prevent autodoping of epitaxial deposits
US3669769A (en) * 1970-09-29 1972-06-13 Ibm Method for minimizing autodoping in epitaxial deposition
US3765960A (en) * 1970-11-02 1973-10-16 Ibm Method for minimizing autodoping in epitaxial deposition
JPS5113607B2 (en) * 1971-08-24 1976-05-01

Also Published As

Publication number Publication date
SE7406350L (en) 1975-02-18
FR2245406A1 (en) 1975-04-25
SE401463B (en) 1978-05-16
DE2422508A1 (en) 1975-03-13
CH590084A5 (en) 1977-07-29
CA1025334A (en) 1978-01-31
SU612610A3 (en) 1978-06-25
AU6895474A (en) 1975-11-20
GB1459839A (en) 1976-12-31
JPS5046481A (en) 1975-04-25
NL7406548A (en) 1975-02-19
BE814071A (en) 1974-08-16
FR2245406B1 (en) 1982-09-24
IT1012165B (en) 1977-03-10
IN141844B (en) 1977-04-23
JPS547556B2 (en) 1979-04-07
US3885061A (en) 1975-05-20
DE2422508B2 (en) 1978-11-23
YU39168B (en) 1984-08-31
DE2422508C3 (en) 1979-08-02

Similar Documents

Publication Publication Date Title
YU223674A (en) Method of depositing a composite layer of heteroexpitaxial silicon onto a heated saphire or spinel
JPS51125159A (en) Releasable layer and its production method
PT67203A (en) Process for preparing and applying dual coat ceramic layer to a substracte in a single firing operation
PH12965A (en) Thin layer leaching method
DE2963582D1 (en) Process for forming a dense thin sintered layer
JPS536322A (en) Method of coating cementous surface
JPS52144994A (en) Method of forming layer image of threeedimensional article
JPS57118046A (en) Luster film coating method
JPS5234068A (en) Fireeretardant thin layer substance
GB1554285A (en) Depositing layers by cathode-sputtering
GB1374792A (en) Method for surface coating
GB1550767A (en) Method of depositing a hafnium layer
GB1356536A (en) Method for the preparation of an overglaze ceramic decalcomania
ZA727521B (en) Method for the production of pliable binding-agent-free web materials
CS180630B2 (en) Magnetogram layer carrier and method of manufacturing thereof
AU460087B2 (en) Process and apparatus for manufacturing a pile covering
JPS51141738A (en) Method of depositing luthenium
CS167686B1 (en) Method of thin layers forming on base material
JPS51130478A (en) Method of formation of matted film or covering layer
CA969819A (en) Method of covering a mainly flat surface with a glass-like layer and article of which a surface has been covered with such a layer by means of said method
JPS5244809A (en) Composite for forming electrooconductive internal coat onto cathodeeray tube
JPS5321047A (en) Production method of composite coating material
JPS52123644A (en) Method of forming oriented deposited film
JPS5216661A (en) Composite material manufacturing method
CA979751A (en) Method for making a film of refractory material