FR2854732A1 - Substrat de matrice de transistor a couche mince et procede de fabrication de celui-ci - Google Patents
Substrat de matrice de transistor a couche mince et procede de fabrication de celui-ciInfo
- Publication number
- FR2854732A1 FR2854732A1 FR0404564A FR0404564A FR2854732A1 FR 2854732 A1 FR2854732 A1 FR 2854732A1 FR 0404564 A FR0404564 A FR 0404564A FR 0404564 A FR0404564 A FR 0404564A FR 2854732 A1 FR2854732 A1 FR 2854732A1
- Authority
- FR
- France
- Prior art keywords
- thin film
- gate
- film transistor
- substrate
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title abstract 6
- 239000010409 thin film Substances 0.000 title abstract 5
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000011159 matrix material Substances 0.000 title 1
- 238000009413 insulation Methods 0.000 abstract 4
- 239000007772 electrode material Substances 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136231—Active matrix addressed cells for reducing the number of lithographic steps
- G02F1/136236—Active matrix addressed cells for reducing the number of lithographic steps using a grey or half tone lithographic process
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Nonlinear Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Ceramic Engineering (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Un substrat de matrice de transistor à couche mince (106) comprend une ligne de grille formée sur un substrat, une ligne de données (104) formée sur le substrat croisant la ligne de grille (102) pour définir une région de pixel, un transistor à couche mince (106) formé à l'intersection de la ligne de grille (102) et la ligne de données (104), le transistor à couche mince (106) comprenant une électrode de grille formée sur le substrat, une couche d'isolation de grille formée sur l'électrode de grille et le substrat, une couche semi-conductrice formée sur la couche d'isolation de grille, une couche de contact ohmique sur la couche semi-conductrice, et une électrode source et une électrode de drain sur la couche de contact ohmique, et un matériau d'électrode transparent dans la région de pixel et connecté à l'électrode de drain du transistor à couche mince (106), dans lequel la couche d'isolation de grille comprend un motif d'isolation de grille (146) au-dessous de la ligne de données et du matériau d'électrode transparent, et recouvrant la ligne de grille.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020030028642A KR100598737B1 (ko) | 2003-05-06 | 2003-05-06 | 박막 트랜지스터 어레이 기판 및 그 제조 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2854732A1 true FR2854732A1 (fr) | 2004-11-12 |
FR2854732B1 FR2854732B1 (fr) | 2007-04-13 |
Family
ID=36821439
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0404564A Expired - Fee Related FR2854732B1 (fr) | 2003-05-06 | 2004-04-29 | Substrat de matrice de transistor a couche mince et procede de fabrication de celui-ci |
Country Status (8)
Country | Link |
---|---|
US (2) | US7217586B2 (fr) |
JP (1) | JP4658514B2 (fr) |
KR (1) | KR100598737B1 (fr) |
CN (1) | CN100385671C (fr) |
DE (1) | DE102004021157B4 (fr) |
FR (1) | FR2854732B1 (fr) |
GB (1) | GB2402548B (fr) |
TW (1) | TWI237396B (fr) |
Families Citing this family (34)
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US5631861A (en) * | 1990-02-02 | 1997-05-20 | Virtual Technologies, Inc. | Force feedback and texture simulating interface device |
TW413844B (en) | 1998-11-26 | 2000-12-01 | Samsung Electronics Co Ltd | Manufacturing methods of thin film transistor array panels for liquid crystal displays and photolithography method of thin films |
KR100615211B1 (ko) * | 2004-02-26 | 2006-08-25 | 삼성에스디아이 주식회사 | 유기 전계 발광 표시장치 및 그 제조방법 |
KR101046928B1 (ko) * | 2004-09-24 | 2011-07-06 | 삼성전자주식회사 | 박막 트랜지스터 표시판과 그 제조방법 |
KR101146418B1 (ko) * | 2004-11-08 | 2012-05-17 | 엘지디스플레이 주식회사 | 폴리 실리콘형 액정 표시 장치용 어레이 기판 및 그 제조방법 |
KR101107246B1 (ko) | 2004-12-24 | 2012-01-25 | 엘지디스플레이 주식회사 | 박막 트랜지스터 기판 및 그 제조 방법 |
KR101107265B1 (ko) * | 2004-12-31 | 2012-01-19 | 엘지디스플레이 주식회사 | 수평 전계 박막 트랜지스터 기판 및 그 제조 방법과, 그를이용한 액정 패널 및 그 제조 방법 |
KR101125252B1 (ko) * | 2004-12-31 | 2012-03-21 | 엘지디스플레이 주식회사 | 폴리 액정 표시 패널 및 그 제조 방법 |
KR101107267B1 (ko) * | 2004-12-31 | 2012-01-19 | 엘지디스플레이 주식회사 | 박막 트랜지스터 기판 및 그 제조 방법과, 그를 이용한액정 패널 및 그 제조 방법 |
KR101107251B1 (ko) * | 2004-12-31 | 2012-01-19 | 엘지디스플레이 주식회사 | 폴리 박막 트랜지스터 기판 및 그 제조 방법 |
KR20060089526A (ko) * | 2005-02-04 | 2006-08-09 | 삼성전자주식회사 | 박막 트랜지스터 표시판과 그 제조 방법 |
US7410842B2 (en) * | 2005-04-19 | 2008-08-12 | Lg. Display Co., Ltd | Method for fabricating thin film transistor of liquid crystal display device |
CN100444408C (zh) * | 2005-09-15 | 2008-12-17 | 中华映管股份有限公司 | 薄膜晶体管及其制造方法 |
JP2007086197A (ja) * | 2005-09-20 | 2007-04-05 | Sharp Corp | アクティブマトリクス基板の製造方法、その製造方法により製造されたアクティブマトリクス基板を備えた表示装置 |
KR101219046B1 (ko) * | 2005-11-17 | 2013-01-08 | 삼성디스플레이 주식회사 | 표시장치와 이의 제조방법 |
KR100818887B1 (ko) * | 2005-12-14 | 2008-04-02 | 엘지.필립스 엘시디 주식회사 | 액정 표시장치 및 그 제조 방법 |
CN100452410C (zh) * | 2006-04-30 | 2009-01-14 | 北京京东方光电科技有限公司 | 一种有源驱动tft矩阵结构及其制造方法 |
KR101282404B1 (ko) | 2006-09-05 | 2013-07-04 | 삼성디스플레이 주식회사 | 액정 표시 장치의 제조 방법 |
TWI352430B (en) | 2006-10-14 | 2011-11-11 | Au Optronics Corp | Lcd tft array substrate and fabricating method the |
JP5038047B2 (ja) * | 2006-10-14 | 2012-10-03 | 友達光電股▲ふん▼有限公司 | 液晶表示装置の薄膜トランジスタアレイ基板及びその製造方法 |
JP4774006B2 (ja) * | 2007-03-08 | 2011-09-14 | 株式会社アルバック | エッチング方法 |
CN100446222C (zh) * | 2007-03-28 | 2008-12-24 | 友达光电股份有限公司 | 薄膜晶体管基板的制造方法 |
TWI426563B (zh) * | 2008-05-07 | 2014-02-11 | Au Optronics Corp | 像素結構與其中之電晶體以及其製造方法 |
WO2010032639A1 (fr) | 2008-09-19 | 2010-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Dispositif d'affichage et procédé de fabrication associé |
WO2011152233A1 (fr) | 2010-06-04 | 2011-12-08 | Semiconductor Energy Laboratory Co., Ltd. | Dispositif semi-conducteur |
US9230826B2 (en) * | 2010-08-26 | 2016-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Etching method using mixed gas and method for manufacturing semiconductor device |
CN102116982B (zh) * | 2010-11-26 | 2012-08-22 | 深圳市华星光电技术有限公司 | 液晶显示面板及其制造方法 |
CN102148194B (zh) * | 2010-11-26 | 2013-09-18 | 深圳市华星光电技术有限公司 | 薄膜晶体管、液晶显示面板及其制造方法 |
KR101529557B1 (ko) * | 2011-06-09 | 2015-06-19 | 엘지디스플레이 주식회사 | 프린지 필드형 액정표시장치의 제조방법 |
KR101976212B1 (ko) * | 2011-10-24 | 2019-05-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
US9048148B2 (en) * | 2012-04-28 | 2015-06-02 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Method of manufacturing TFT array using multi-tone mask |
CN104241297B (zh) | 2014-08-25 | 2017-12-08 | 京东方科技集团股份有限公司 | 阵列基板及其制造方法和显示面板 |
CN104992947B (zh) * | 2015-06-03 | 2018-01-12 | 合肥鑫晟光电科技有限公司 | 一种氧化物半导体tft阵列基板及其制备方法 |
CN108010924A (zh) * | 2017-12-06 | 2018-05-08 | 京东方科技集团股份有限公司 | 一种阵列基板及制作方法、显示面板 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2307087A (en) * | 1995-08-19 | 1997-05-14 | Lg Electronics Inc | Liquid crystal displays |
US5847780A (en) * | 1992-06-01 | 1998-12-08 | Samsung Electronics Co., Ltd. | Liquid crystal display and a manufacturing method thereof |
US6338989B1 (en) * | 1999-08-02 | 2002-01-15 | Lg. Philips Lcd Co., Ltd. | Array substrate for use in liquid crystal display device and method of manufacturing the same |
US6506617B1 (en) * | 2001-11-06 | 2003-01-14 | Hannstar Display Corporation | In-plane switching liquid crystal display array |
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JP2816982B2 (ja) * | 1989-03-16 | 1998-10-27 | 松下電子工業株式会社 | 液晶表示装置 |
KR100190023B1 (ko) * | 1996-02-29 | 1999-06-01 | 윤종용 | 박막트랜지스터-액정표시장치 및 그 제조방법 |
KR100269518B1 (ko) * | 1997-12-29 | 2000-10-16 | 구본준 | 박막트랜지스터 제조방법 |
KR100538293B1 (ko) | 1998-04-03 | 2006-03-17 | 삼성전자주식회사 | 평면 구동 방식 액정 표시 장치의 제조 방법 |
KR100590750B1 (ko) | 1999-03-08 | 2006-06-15 | 삼성전자주식회사 | 액정표시장치용박막트랜지스터기판의제조방법 |
US6524876B1 (en) * | 1999-04-08 | 2003-02-25 | Samsung Electronics Co., Ltd. | Thin film transistor array panels for a liquid crystal display and a method for manufacturing the same |
US6759281B1 (en) * | 1999-04-26 | 2004-07-06 | Samsung Electronics Co., Ltd. | Method of making a display switch having a contact hole through a passivation layer and a color filter |
JP3327287B2 (ja) * | 1999-05-20 | 2002-09-24 | 日本電気株式会社 | アクティブマトリクス型液晶表示装置 |
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JP3391343B2 (ja) * | 1999-10-26 | 2003-03-31 | 日本電気株式会社 | アクティブマトリクス基板及びその製造方法 |
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KR100806897B1 (ko) | 2001-08-07 | 2008-02-22 | 삼성전자주식회사 | 액정 표시 장치 |
KR20030016051A (ko) * | 2001-08-20 | 2003-02-26 | 삼성전자주식회사 | 액정 표시 장치용 박막 트랜지스터 기판 및 그 제조 방법 |
-
2003
- 2003-05-06 KR KR1020030028642A patent/KR100598737B1/ko not_active IP Right Cessation
-
2004
- 2004-04-28 US US10/833,185 patent/US7217586B2/en not_active Expired - Fee Related
- 2004-04-29 FR FR0404564A patent/FR2854732B1/fr not_active Expired - Fee Related
- 2004-04-29 DE DE102004021157A patent/DE102004021157B4/de not_active Expired - Fee Related
- 2004-04-30 GB GB0409739A patent/GB2402548B/en not_active Expired - Fee Related
- 2004-05-06 JP JP2004137480A patent/JP4658514B2/ja not_active Expired - Fee Related
- 2004-05-06 TW TW093112763A patent/TWI237396B/zh not_active IP Right Cessation
- 2004-05-08 CN CNB2004100381298A patent/CN100385671C/zh not_active Expired - Fee Related
-
2007
- 2007-03-12 US US11/716,690 patent/US7525120B2/en not_active Expired - Lifetime
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5847780A (en) * | 1992-06-01 | 1998-12-08 | Samsung Electronics Co., Ltd. | Liquid crystal display and a manufacturing method thereof |
GB2307087A (en) * | 1995-08-19 | 1997-05-14 | Lg Electronics Inc | Liquid crystal displays |
US6338989B1 (en) * | 1999-08-02 | 2002-01-15 | Lg. Philips Lcd Co., Ltd. | Array substrate for use in liquid crystal display device and method of manufacturing the same |
US6506617B1 (en) * | 2001-11-06 | 2003-01-14 | Hannstar Display Corporation | In-plane switching liquid crystal display array |
Also Published As
Publication number | Publication date |
---|---|
US7217586B2 (en) | 2007-05-15 |
TW200427098A (en) | 2004-12-01 |
GB2402548B (en) | 2005-12-21 |
KR20040095045A (ko) | 2004-11-12 |
CN1551367A (zh) | 2004-12-01 |
GB2402548A (en) | 2004-12-08 |
GB0409739D0 (en) | 2004-06-09 |
DE102004021157B4 (de) | 2010-11-18 |
US7525120B2 (en) | 2009-04-28 |
CN100385671C (zh) | 2008-04-30 |
KR100598737B1 (ko) | 2006-07-10 |
US20040222421A1 (en) | 2004-11-11 |
JP2004334214A (ja) | 2004-11-25 |
JP4658514B2 (ja) | 2011-03-23 |
US20070170432A1 (en) | 2007-07-26 |
FR2854732B1 (fr) | 2007-04-13 |
DE102004021157A1 (de) | 2004-12-23 |
TWI237396B (en) | 2005-08-01 |
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