FR2726940B1 - Dispositif a semiconducteurs comportant un boitier et une embase isolante, et procede de fabrication de ce dispositif - Google Patents

Dispositif a semiconducteurs comportant un boitier et une embase isolante, et procede de fabrication de ce dispositif

Info

Publication number
FR2726940B1
FR2726940B1 FR9506472A FR9506472A FR2726940B1 FR 2726940 B1 FR2726940 B1 FR 2726940B1 FR 9506472 A FR9506472 A FR 9506472A FR 9506472 A FR9506472 A FR 9506472A FR 2726940 B1 FR2726940 B1 FR 2726940B1
Authority
FR
France
Prior art keywords
housing
manufacturing
semiconductor device
insulating base
insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR9506472A
Other languages
English (en)
Other versions
FR2726940A1 (fr
Inventor
Kiyochi Arai
Yoshio Takagi
Tatsuya Iwasa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of FR2726940A1 publication Critical patent/FR2726940A1/fr
Application granted granted Critical
Publication of FR2726940B1 publication Critical patent/FR2726940B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601—Structure
    • H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H01L2224/48139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous wire daisy chain
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01068—Erbium [Er]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Wire Bonding (AREA)
FR9506472A 1994-05-31 1995-05-31 Dispositif a semiconducteurs comportant un boitier et une embase isolante, et procede de fabrication de ce dispositif Expired - Lifetime FR2726940B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11901994A JP3316714B2 (ja) 1994-05-31 1994-05-31 半導体装置

Publications (2)

Publication Number Publication Date
FR2726940A1 FR2726940A1 (fr) 1996-05-15
FR2726940B1 true FR2726940B1 (fr) 1998-09-18

Family

ID=14750979

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9506472A Expired - Lifetime FR2726940B1 (fr) 1994-05-31 1995-05-31 Dispositif a semiconducteurs comportant un boitier et une embase isolante, et procede de fabrication de ce dispositif

Country Status (4)

Country Link
US (1) US5686758A (fr)
JP (1) JP3316714B2 (fr)
DE (1) DE19518753B4 (fr)
FR (1) FR2726940B1 (fr)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19627858A1 (de) * 1996-07-11 1998-01-22 Eurotec Ges Fuer Energiesparte Komplexes Leistungsbauelement
JP3512977B2 (ja) * 1996-08-27 2004-03-31 同和鉱業株式会社 高信頼性半導体用基板
US6281579B1 (en) * 1997-02-14 2001-08-28 International Rectifier Corporation Insert-molded leadframe to optimize interface between powertrain and driver board
US6184464B1 (en) * 1998-04-27 2001-02-06 Square D Company Protective containment apparatus for potted electronic circuits
JP4845250B2 (ja) * 2000-07-25 2011-12-28 ソニー株式会社 固体撮像素子収納パッケージ及び固体撮像装置
US6845017B2 (en) * 2000-09-20 2005-01-18 Ballard Power Systems Corporation Substrate-level DC bus design to reduce module inductance
US7012810B2 (en) * 2000-09-20 2006-03-14 Ballard Power Systems Corporation Leadframe-based module DC bus design to reduce module inductance
JP3842548B2 (ja) * 2000-12-12 2006-11-08 富士通株式会社 半導体装置の製造方法及び半導体装置
JP4813683B2 (ja) * 2001-05-11 2011-11-09 株式会社三社電機製作所 樹脂モールドされた回路装置
KR100753793B1 (ko) * 2001-08-28 2007-08-31 페어차일드코리아반도체 주식회사 전력 반도체 패키지 및 그 제조방법
KR100457380B1 (ko) 2002-05-06 2004-11-16 삼성전기주식회사 광마우스용 칩 온 보드 리드 패키지 및 그에 사용되는렌즈커버
US6779260B1 (en) * 2003-03-28 2004-08-24 Delphi Technologies, Inc. Overmolded electronic package including circuit-carrying substrate
DE102004018471B4 (de) * 2004-04-16 2009-04-16 Infineon Technologies Ag Leistungshalbleiterschaltung und Verfahren zum Herstellen einer Leistungshalbleiterschaltung
DE102004032371A1 (de) * 2004-06-30 2006-01-26 Robert Bosch Gmbh Elektronische Schaltungseinheit
DE102004042367B4 (de) * 2004-09-01 2008-07-10 Infineon Technologies Ag Leistungshalbleitermodul
JP4453498B2 (ja) * 2004-09-22 2010-04-21 富士電機システムズ株式会社 パワー半導体モジュールおよびその製造方法
EP2034519A4 (fr) * 2006-05-30 2012-01-04 Kokusan Denki Co Dispositif à semi-conducteurs scellé à la résine et dispositif électronique l'utilisant
DE102007016222B3 (de) * 2007-04-04 2008-11-06 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul in Druckkontaktausführung sowie Verfahren zur Herstellung desselben
JP5328645B2 (ja) * 2007-05-18 2013-10-30 株式会社三社電機製作所 電力用半導体モジュール
DE102007024159B3 (de) * 2007-05-24 2008-11-06 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul
US7868465B2 (en) * 2007-06-04 2011-01-11 Infineon Technologies Ag Semiconductor device with a metallic carrier and two semiconductor chips applied to the carrier
DE102007037538A1 (de) * 2007-08-09 2009-02-12 Robert Bosch Gmbh Baugruppe sowie Herstellung einer Baugruppe
JP4501977B2 (ja) 2007-09-13 2010-07-14 トヨタ自動車株式会社 半導体装置とワイヤボンディング方法
JP2013157550A (ja) * 2012-01-31 2013-08-15 Rohm Co Ltd パワーモジュール半導体装置およびその製造方法
EP2814056B1 (fr) * 2012-09-13 2017-07-12 Fuji Electric Co., Ltd. Dispositif à semi-conducteur, procédé destiné à fixer un élément de dissipation de la chaleur sur un dispositif à semi-conducteur, et procédé destiné à fabriquer un dispositif à semi-conducteur
JP2015065339A (ja) * 2013-09-25 2015-04-09 三菱電機株式会社 半導体装置
JP6480098B2 (ja) 2013-10-31 2019-03-06 三菱電機株式会社 半導体装置
JP6323325B2 (ja) 2014-04-21 2018-05-16 三菱電機株式会社 半導体装置、半導体装置の製造方法
JP6272213B2 (ja) 2014-11-26 2018-01-31 三菱電機株式会社 半導体装置
JP6848802B2 (ja) 2017-10-11 2021-03-24 三菱電機株式会社 半導体装置
CN113437027B (zh) * 2021-06-24 2022-08-05 深圳卓斌电子有限公司 一种集成电路封装支架
CN114823549B (zh) * 2022-06-27 2022-11-11 北京升宇科技有限公司 一种纵向场效应晶体管vdmos芯片的封装结构及封装方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS577148A (en) * 1980-06-16 1982-01-14 Mitsubishi Electric Corp Semiconductor module
US4750031A (en) * 1982-06-25 1988-06-07 The United States Of America As Represented By The United States National Aeronautics And Space Administration Hermetically sealable package for hybrid solid-state electronic devices and the like
DE3241508A1 (de) * 1982-11-10 1984-05-10 Brown, Boveri & Cie Ag, 6800 Mannheim Leistungstransistor-modul
DE3621994A1 (de) * 1986-07-01 1988-01-14 Bbc Brown Boveri & Cie Leistungshalbleitermodul
US4920405A (en) * 1986-11-28 1990-04-24 Fuji Electric Co., Ltd. Overcurrent limiting semiconductor device
JPH02146739A (ja) * 1988-11-28 1990-06-05 Mitsubishi Electric Corp 半導体装置
US4965710A (en) * 1989-11-16 1990-10-23 International Rectifier Corporation Insulated gate bipolar transistor power module
US5172215A (en) * 1990-03-06 1992-12-15 Fuji Electric Co., Ltd. Overcurrent-limiting type semiconductor device
JPH0770680B2 (ja) * 1990-03-29 1995-07-31 三洋電機株式会社 混成集積回路装置
JPH0476212A (ja) * 1990-07-19 1992-03-11 Meidensha Corp 熱電併給装置
JP2849865B2 (ja) * 1990-08-07 1999-01-27 京セラ株式会社 放熱体の製造方法
JPH05166969A (ja) * 1991-10-14 1993-07-02 Fuji Electric Co Ltd 半導体装置
JP2848068B2 (ja) * 1991-12-10 1999-01-20 富士電機株式会社 半導体装置
JP2656416B2 (ja) * 1991-12-16 1997-09-24 三菱電機株式会社 半導体装置および半導体装置の製造方法、並びに半導体装置に用いられる複合基板および複合基板の製造方法
JP2854757B2 (ja) * 1992-06-17 1999-02-03 三菱電機株式会社 半導体パワーモジュール
JP2725952B2 (ja) * 1992-06-30 1998-03-11 三菱電機株式会社 半導体パワーモジュール
JP2956363B2 (ja) * 1992-07-24 1999-10-04 富士電機株式会社 パワー半導体装置
US5559374A (en) * 1993-03-25 1996-09-24 Sanyo Electric Co., Ltd. Hybrid integrated circuit
JP2912526B2 (ja) * 1993-07-05 1999-06-28 三菱電機株式会社 半導体パワーモジュールおよび複合基板
DE9313483U1 (de) * 1993-09-07 1994-01-05 SZE Microelectronics GmbH, 24220 Flintbek Vorrichtung zur Aufnahme
US5408128A (en) * 1993-09-15 1995-04-18 International Rectifier Corporation High power semiconductor device module with low thermal resistance and simplified manufacturing

Also Published As

Publication number Publication date
DE19518753A1 (de) 1995-12-07
FR2726940A1 (fr) 1996-05-15
JPH07326711A (ja) 1995-12-12
US5686758A (en) 1997-11-11
DE19518753B4 (de) 2005-03-03
JP3316714B2 (ja) 2002-08-19

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