FR2778495B1 - Dispositif semiconducteur a structure mos et procede de fabrication d'un tel dispositif - Google Patents
Dispositif semiconducteur a structure mos et procede de fabrication d'un tel dispositifInfo
- Publication number
- FR2778495B1 FR2778495B1 FR9814151A FR9814151A FR2778495B1 FR 2778495 B1 FR2778495 B1 FR 2778495B1 FR 9814151 A FR9814151 A FR 9814151A FR 9814151 A FR9814151 A FR 9814151A FR 2778495 B1 FR2778495 B1 FR 2778495B1
- Authority
- FR
- France
- Prior art keywords
- manufacturing
- mos structure
- semiconductor device
- semiconductor
- mos
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/66772—Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/78654—Monocrystalline silicon transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10123303A JPH11317527A (ja) | 1998-05-06 | 1998-05-06 | 半導体装置及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2778495A1 FR2778495A1 (fr) | 1999-11-12 |
FR2778495B1 true FR2778495B1 (fr) | 2001-10-19 |
Family
ID=14857211
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR9814151A Expired - Fee Related FR2778495B1 (fr) | 1998-05-06 | 1998-11-10 | Dispositif semiconducteur a structure mos et procede de fabrication d'un tel dispositif |
Country Status (6)
Country | Link |
---|---|
US (2) | US6340829B1 (fr) |
JP (1) | JPH11317527A (fr) |
KR (1) | KR100305308B1 (fr) |
DE (1) | DE19853432A1 (fr) |
FR (1) | FR2778495B1 (fr) |
TW (1) | TW390036B (fr) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6875640B1 (en) * | 2000-06-08 | 2005-04-05 | Micron Technology, Inc. | Stereolithographic methods for forming a protective layer on a semiconductor device substrate and substrates including protective layers so formed |
KR100366923B1 (ko) * | 2001-02-19 | 2003-01-06 | 삼성전자 주식회사 | 에스오아이 기판 및 이의 제조방법 |
US6465313B1 (en) * | 2001-07-05 | 2002-10-15 | Advanced Micro Devices, Inc. | SOI MOSFET with graded source/drain silicide |
US20030134486A1 (en) * | 2002-01-16 | 2003-07-17 | Zhongze Wang | Semiconductor-on-insulator comprising integrated circuitry |
JP3539946B2 (ja) | 2002-03-28 | 2004-07-07 | 沖電気工業株式会社 | Soi構造を有する半導体装置の製造方法 |
JP2004039982A (ja) * | 2002-07-05 | 2004-02-05 | Mitsubishi Electric Corp | 半導体装置 |
US6995438B1 (en) * | 2003-10-01 | 2006-02-07 | Advanced Micro Devices, Inc. | Semiconductor device with fully silicided source/drain and damascence metal gate |
US7397073B2 (en) * | 2004-11-22 | 2008-07-08 | International Business Machines Corporation | Barrier dielectric stack for seam protection |
US7244659B2 (en) * | 2005-03-10 | 2007-07-17 | Micron Technology, Inc. | Integrated circuits and methods of forming a field effect transistor |
US7528065B2 (en) * | 2006-01-17 | 2009-05-05 | International Business Machines Corporation | Structure and method for MOSFET gate electrode landing pad |
US7557002B2 (en) * | 2006-08-18 | 2009-07-07 | Micron Technology, Inc. | Methods of forming transistor devices |
US7989322B2 (en) | 2007-02-07 | 2011-08-02 | Micron Technology, Inc. | Methods of forming transistors |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63318779A (ja) | 1987-06-22 | 1988-12-27 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
JPS6420663A (en) | 1987-07-15 | 1989-01-24 | Nec Corp | Manufacture of semiconductor device |
JPH01291467A (ja) * | 1988-05-19 | 1989-11-24 | Toshiba Corp | 薄膜トランジスタ |
US5258645A (en) * | 1990-03-09 | 1993-11-02 | Fujitsu Limited | Semiconductor device having MOS transistor and a sidewall with a double insulator layer structure |
US5151376A (en) * | 1990-05-31 | 1992-09-29 | Sgs-Thomson Microelectronics, Inc. | Method of making polycrystalline silicon resistors for integrated circuits |
US5323047A (en) * | 1992-01-31 | 1994-06-21 | Sgs-Thomson Microelectronics, Inc. | Structure formed by a method of patterning a submicron semiconductor layer |
US5424570A (en) * | 1992-01-31 | 1995-06-13 | Sgs-Thomson Microelectronics, Inc. | Contact structure for improving photoresist adhesion on a dielectric layer |
US5576556A (en) | 1993-08-20 | 1996-11-19 | Semiconductor Energy Laboratory Co., Ltd. | Thin film semiconductor device with gate metal oxide and sidewall spacer |
JPH06338601A (ja) * | 1993-05-31 | 1994-12-06 | Toshiba Corp | 半導体装置及びその製造方法 |
US5719065A (en) | 1993-10-01 | 1998-02-17 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device with removable spacers |
US5428240A (en) * | 1994-07-07 | 1995-06-27 | United Microelectronics Corp. | Source/drain structural configuration for MOSFET integrated circuit devices |
TW333680B (en) * | 1996-12-17 | 1998-06-11 | Mos Electronics Taiwan Inc | The processes for improving polysilicon & gate oxide quality inside programmable cell |
JPH1168103A (ja) * | 1997-08-22 | 1999-03-09 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
US6174756B1 (en) | 1997-09-30 | 2001-01-16 | Siemens Aktiengesellschaft | Spacers to block deep junction implants and silicide formation in integrated circuits |
US5880006A (en) * | 1998-05-22 | 1999-03-09 | Vlsi Technology, Inc. | Method for fabrication of a semiconductor device |
-
1998
- 1998-05-06 JP JP10123303A patent/JPH11317527A/ja active Pending
- 1998-10-16 US US09/173,616 patent/US6340829B1/en not_active Expired - Fee Related
- 1998-10-21 TW TW087117364A patent/TW390036B/zh not_active IP Right Cessation
- 1998-11-10 FR FR9814151A patent/FR2778495B1/fr not_active Expired - Fee Related
- 1998-11-13 KR KR1019980048709A patent/KR100305308B1/ko not_active IP Right Cessation
- 1998-11-19 DE DE19853432A patent/DE19853432A1/de not_active Ceased
-
2001
- 2001-10-23 US US09/983,164 patent/US6699758B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH11317527A (ja) | 1999-11-16 |
KR100305308B1 (ko) | 2001-09-29 |
KR19990087000A (ko) | 1999-12-15 |
FR2778495A1 (fr) | 1999-11-12 |
TW390036B (en) | 2000-05-11 |
US6699758B2 (en) | 2004-03-02 |
US20020020876A1 (en) | 2002-02-21 |
DE19853432A1 (de) | 1999-11-18 |
US6340829B1 (en) | 2002-01-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |
Effective date: 20110801 |