FR2655176B1 - Dispositif de memoire a semiconducteurs programmable et effacable par voie electrique. - Google Patents
Dispositif de memoire a semiconducteurs programmable et effacable par voie electrique.Info
- Publication number
- FR2655176B1 FR2655176B1 FR9000854A FR9000854A FR2655176B1 FR 2655176 B1 FR2655176 B1 FR 2655176B1 FR 9000854 A FR9000854 A FR 9000854A FR 9000854 A FR9000854 A FR 9000854A FR 2655176 B1 FR2655176 B1 FR 2655176B1
- Authority
- FR
- France
- Prior art keywords
- memory device
- semiconductor memory
- electrically programmable
- erasable semiconductor
- erasable
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/08—Address circuits; Decoders; Word-line control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
- G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019890017672A KR930000869B1 (ko) | 1989-11-30 | 1989-11-30 | 페이지 소거 가능한 플래쉬형 이이피롬 장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2655176A1 FR2655176A1 (fr) | 1991-05-31 |
FR2655176B1 true FR2655176B1 (fr) | 1993-07-16 |
Family
ID=19292413
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR9000854A Expired - Lifetime FR2655176B1 (fr) | 1989-11-30 | 1990-01-25 | Dispositif de memoire a semiconducteurs programmable et effacable par voie electrique. |
Country Status (7)
Country | Link |
---|---|
US (1) | US5109361A (fr) |
JP (1) | JPH07122997B2 (fr) |
KR (1) | KR930000869B1 (fr) |
DE (1) | DE4000787C2 (fr) |
FR (1) | FR2655176B1 (fr) |
GB (1) | GB2238637B (fr) |
NL (1) | NL194451C (fr) |
Families Citing this family (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100204721B1 (ko) * | 1989-08-18 | 1999-06-15 | 가나이 쓰도무 | 메모리블럭으로 분활된 메모리셀 어레이를 갖는 전기적 소거 가능한 반도체 불휘발성 기억장치 |
DE69133097T2 (de) * | 1990-09-25 | 2003-02-20 | Kabushiki Kaisha Toshiba, Kawasaki | Nichtflüchtiger Halbleiterspeicher |
US5249158A (en) * | 1991-02-11 | 1993-09-28 | Intel Corporation | Flash memory blocking architecture |
EP0509184A1 (fr) * | 1991-04-18 | 1992-10-21 | STMicroelectronics S.r.l. | Mémoire flash EPROM effaçable par secteurs et procédé d'écriture apparentée |
JPH0528756A (ja) * | 1991-07-24 | 1993-02-05 | Toshiba Corp | 半導体記憶装置 |
JPH05102438A (ja) * | 1991-10-04 | 1993-04-23 | Mitsubishi Electric Corp | 不揮発性半導体記憶装置 |
DE4133490C2 (de) * | 1991-10-09 | 1999-06-10 | Texas Instruments Deutschland | Verfahren zum Betreiben einer mit einer Versorgungsspannung gespeisten integrierten Halbleiterspeichervorrichtung mit zeilen- und spaltenweise angeordneten Speicherzellen |
US5270980A (en) * | 1991-10-28 | 1993-12-14 | Eastman Kodak Company | Sector erasable flash EEPROM |
US5621738A (en) * | 1991-12-10 | 1997-04-15 | Eastman Kodak Company | Method for programming flash EEPROM devices |
US5388072A (en) * | 1992-04-10 | 1995-02-07 | International Business Machines Corporation | Bit line switch array for electronic computer memory |
JP2953196B2 (ja) * | 1992-05-15 | 1999-09-27 | 日本電気株式会社 | 不揮発性半導体記憶装置 |
US5490110A (en) * | 1992-08-31 | 1996-02-06 | Nippon Steel Corporation | Non-volatile semiconductor memory device having disturb verify function |
US5319593A (en) * | 1992-12-21 | 1994-06-07 | National Semiconductor Corp. | Memory array with field oxide islands eliminated and method |
US5339279A (en) * | 1993-05-07 | 1994-08-16 | Motorola, Inc. | Block erasable flash EEPROM apparatus and method thereof |
US5357476A (en) * | 1993-06-01 | 1994-10-18 | Motorola, Inc. | Apparatus and method for erasing a flash EEPROM |
EP0637035B1 (fr) * | 1993-07-29 | 1996-11-13 | STMicroelectronics S.r.l. | Structure de circuit pour matrice de mémoire et procédé de fabrication y reférant |
FR2717591B1 (fr) * | 1994-03-15 | 1996-06-21 | Texas Instruments France | Mémoire virtuelle d'interconnexion notamment pour la mise en communication de terminaux de télécommunication fonctionnant à des fréquences différentes. |
US5422846A (en) * | 1994-04-04 | 1995-06-06 | Motorola Inc. | Nonvolatile memory having overerase protection |
KR0172422B1 (ko) * | 1995-06-30 | 1999-03-30 | 김광호 | 스냅백 브레이크다운 현상을 제거한 공통 소오스 라인 제어회로 |
KR0169412B1 (ko) * | 1995-10-16 | 1999-02-01 | 김광호 | 불휘발성 반도체 메모리 장치 |
KR0169420B1 (ko) * | 1995-10-17 | 1999-02-01 | 김광호 | 불 휘발성 반도체 메모리의 데이타 리드 방법 및 그에 따른 회로 |
US5646890A (en) * | 1996-03-29 | 1997-07-08 | Aplus Integrated Circuits, Inc. | Flexible byte-erase flash memory and decoder |
US5687121A (en) * | 1996-03-29 | 1997-11-11 | Aplus Integrated Circuits, Inc. | Flash EEPROM worldline decoder |
US5777923A (en) * | 1996-06-17 | 1998-07-07 | Aplus Integrated Circuits, Inc. | Flash memory read/write controller |
US5748538A (en) * | 1996-06-17 | 1998-05-05 | Aplus Integrated Circuits, Inc. | OR-plane memory cell array for flash memory with bit-based write capability, and methods for programming and erasing the memory cell array |
GB2321738A (en) * | 1997-01-30 | 1998-08-05 | Motorola Inc | Circuit and method of erasing a byte in a non-volatile memory |
EP0978845A1 (fr) * | 1998-08-07 | 2000-02-09 | STMicroelectronics S.r.l. | Mémoire non-volatile à semi-conducteur, électriquement programmable |
US5995417A (en) * | 1998-10-20 | 1999-11-30 | Advanced Micro Devices, Inc. | Scheme for page erase and erase verify in a non-volatile memory array |
US6876031B1 (en) * | 1999-02-23 | 2005-04-05 | Winbond Electronics Corporation | Method and apparatus for split gate source side injection flash memory cell and array with dedicated erase gates |
US6587383B1 (en) * | 2002-03-19 | 2003-07-01 | Micron Technology, Inc. | Erase block architecture for non-volatile memory |
KR100572864B1 (ko) | 2003-12-27 | 2006-04-24 | 엘지엔시스(주) | 매체자동지급기의 매체방출부 |
KR100705221B1 (ko) * | 2004-09-03 | 2007-04-06 | 에스티마이크로일렉트로닉스 엔.브이. | 플래쉬 메모리 소자 및 이를 이용한 플래쉬 메모리 셀의소거 방법 |
US7221608B1 (en) * | 2004-10-04 | 2007-05-22 | National Semiconductor Corporation | Single NMOS device memory cell and array |
US7593259B2 (en) * | 2006-09-13 | 2009-09-22 | Mosaid Technologies Incorporated | Flash multi-level threshold distribution scheme |
KR101494023B1 (ko) * | 2007-02-16 | 2015-02-16 | 컨버전트 인텔렉츄얼 프로퍼티 매니지먼트 인코포레이티드 | 반도체 장치 및 상호접속된 장치들을 갖는 시스템에서의 전력 소비를 감소시키는 방법 |
US7577059B2 (en) * | 2007-02-27 | 2009-08-18 | Mosaid Technologies Incorporated | Decoding control with address transition detection in page erase function |
US7804718B2 (en) * | 2007-03-07 | 2010-09-28 | Mosaid Technologies Incorporated | Partial block erase architecture for flash memory |
US7577029B2 (en) * | 2007-05-04 | 2009-08-18 | Mosaid Technologies Incorporated | Multi-level cell access buffer with dual function |
US9588883B2 (en) | 2011-09-23 | 2017-03-07 | Conversant Intellectual Property Management Inc. | Flash memory system |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2828855C2 (de) * | 1978-06-30 | 1982-11-18 | Siemens AG, 1000 Berlin und 8000 München | Wortweise elektrisch umprogrammierbarer, nichtflüchtiger Speicher sowie Verfahren zum Löschen bzw. Einschreiben eines bzw. in einen solchen Speicher(s) |
US4266283A (en) * | 1979-02-16 | 1981-05-05 | Intel Corporation | Electrically alterable read-mostly memory |
US4384349A (en) * | 1979-10-01 | 1983-05-17 | Texas Instruments Incorporated | High density electrically erasable floating gate dual-injection programmable memory device |
US4342102A (en) * | 1980-06-18 | 1982-07-27 | Signetics Corporation | Semiconductor memory array |
US4366555A (en) * | 1980-08-01 | 1982-12-28 | National Semiconductor Corporation | Electrically erasable programmable read only memory |
EP0214705B1 (fr) * | 1980-10-15 | 1992-01-15 | Kabushiki Kaisha Toshiba | Mémoire semi-conductrice avec un temps d'enregistrement de données |
IE55327B1 (en) * | 1981-12-29 | 1990-08-15 | Fujitsu Ltd | Nonvolatile semiconductor memory circuit |
EP0088815B1 (fr) * | 1982-03-17 | 1985-12-18 | Deutsche ITT Industries GmbH | Matrice de mémoire effaçable électriquement (EEPROM) |
FR2528613B1 (fr) * | 1982-06-09 | 1991-09-20 | Hitachi Ltd | Memoire a semi-conducteurs |
DE3472502D1 (en) * | 1983-09-16 | 1988-08-04 | Fujitsu Ltd | Plural-bit-per-cell read-only memory |
US4698787A (en) * | 1984-11-21 | 1987-10-06 | Exel Microelectronics, Inc. | Single transistor electrically programmable memory device and method |
JPS61184795A (ja) * | 1985-02-13 | 1986-08-18 | Toshiba Corp | 電気的消去・再書込み可能な読出し専用メモリ |
IT1214607B (it) * | 1985-05-14 | 1990-01-18 | Ates Componenti Elettron | Circuito di precarica per linee di riga di un sistema di memoria, in particolare a celle programmabili. |
US4719598A (en) * | 1985-05-31 | 1988-01-12 | Harris Corporation | Bit addressable programming arrangement |
US4783766A (en) * | 1986-05-30 | 1988-11-08 | Seeq Technology, Inc. | Block electrically erasable EEPROM |
GB2201312A (en) * | 1987-02-07 | 1988-08-24 | Motorola Inc | Memory system |
JPS63248000A (ja) * | 1987-04-02 | 1988-10-14 | Matsushita Electronics Corp | 不揮発性半導体メモリ |
JPS63306598A (ja) * | 1987-06-08 | 1988-12-14 | Hitachi Ltd | 不揮発性メモリセルの消去方式 |
US5053990A (en) * | 1988-02-17 | 1991-10-01 | Intel Corporation | Program/erase selection for flash memory |
JP2644270B2 (ja) * | 1988-04-25 | 1997-08-25 | 株式会社日立製作所 | 半導体記憶装置 |
US4949309A (en) * | 1988-05-11 | 1990-08-14 | Catalyst Semiconductor, Inc. | EEPROM utilizing single transistor per cell capable of both byte erase and flash erase |
JPH02126498A (ja) * | 1988-07-08 | 1990-05-15 | Hitachi Ltd | 不揮発性半導体記憶装置 |
-
1989
- 1989-11-30 KR KR1019890017672A patent/KR930000869B1/ko not_active IP Right Cessation
-
1990
- 1990-01-04 US US07/460,737 patent/US5109361A/en not_active Expired - Lifetime
- 1990-01-12 DE DE4000787A patent/DE4000787C2/de not_active Expired - Lifetime
- 1990-01-25 NL NL9000190A patent/NL194451C/nl not_active IP Right Cessation
- 1990-01-25 FR FR9000854A patent/FR2655176B1/fr not_active Expired - Lifetime
- 1990-01-30 GB GB9002029A patent/GB2238637B/en not_active Expired - Lifetime
- 1990-03-27 JP JP7578890A patent/JPH07122997B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE4000787A1 (de) | 1991-06-06 |
JPH07122997B2 (ja) | 1995-12-25 |
GB2238637B (en) | 1994-03-30 |
FR2655176A1 (fr) | 1991-05-31 |
DE4000787C2 (de) | 1993-11-04 |
US5109361A (en) | 1992-04-28 |
NL194451B (nl) | 2001-12-03 |
NL194451C (nl) | 2002-04-04 |
GB9002029D0 (en) | 1990-03-28 |
NL9000190A (nl) | 1991-06-17 |
KR930000869B1 (ko) | 1993-02-08 |
KR910010526A (ko) | 1991-06-29 |
JPH03178100A (ja) | 1991-08-02 |
GB2238637A (en) | 1991-06-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
FR2655176B1 (fr) | Dispositif de memoire a semiconducteurs programmable et effacable par voie electrique. | |
FR2640796B1 (fr) | Dispositif de memoire a semi-conducteurs | |
NL191814C (nl) | Halfgeleidergeheugeninrichting. | |
FR2727227B1 (fr) | Dispositif de securite actif a memoire electronique | |
FR2600453B1 (fr) | Dispositif de memoire a semi-conducteurs | |
GB8921422D0 (en) | Electrically erasable programmable semiconductor memory device | |
DE68923505D1 (de) | Halbleiterspeicheranordnung. | |
DE3889097D1 (de) | Halbleiterspeicheranordnung. | |
DE68919316D1 (de) | Münzsortierungsvorrichtung. | |
DE58904157D1 (de) | Elektronische einrichtung und betriebsverfahren. | |
FR2618579B1 (fr) | Circuit integre a memoire comportant un dispositif anti-fraude | |
DE69016153D1 (de) | Nichtflüchtige Halbleiterspeicheranordnung. | |
DE68918367D1 (de) | Halbleiterspeicheranordnung. | |
DE69032799D1 (de) | Programmierbare logische Vorrichtung und zugehörige Speicherschaltung | |
DE69022537D1 (de) | Halbleiterspeicheranordnung. | |
DE69029013D1 (de) | Programmierbare Halbleiterspeicheranordnung | |
DE68923588D1 (de) | Halbleiterspeicheranordnung. | |
DE69017518D1 (de) | Halbleiterspeicheranordnung. | |
DE68920908D1 (de) | Programmierbare Logik-Vorrichtung. | |
FR2583202B1 (fr) | Dispositif de memoire a semiconducteurs | |
FR2578085B1 (fr) | Dispositif de memoire a semiconducteur | |
DE68924080D1 (de) | Halbleiterspeichervorrichtung. | |
NL194178B (nl) | Halfgeleidergeheugeneenheid. | |
DE69024112D1 (de) | Halbleiterspeicheranordnung | |
DE69014821D1 (de) | Nichtflüchtige Speicheranordung. |