FR2456389A1 - Structure d'electrodes pour dispositifs semi-conducteurs - Google Patents

Structure d'electrodes pour dispositifs semi-conducteurs

Info

Publication number
FR2456389A1
FR2456389A1 FR8004965A FR8004965A FR2456389A1 FR 2456389 A1 FR2456389 A1 FR 2456389A1 FR 8004965 A FR8004965 A FR 8004965A FR 8004965 A FR8004965 A FR 8004965A FR 2456389 A1 FR2456389 A1 FR 2456389A1
Authority
FR
France
Prior art keywords
layer
semiconductor devices
regions
playing
role
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8004965A
Other languages
English (en)
Other versions
FR2456389B1 (fr
Inventor
Yoshihito Amemiya
Takayuki Sugeta
Yoshihiko Mizusdhima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP5560179A external-priority patent/JPS5949712B2/ja
Priority claimed from JP5560079A external-priority patent/JPS5949711B2/ja
Priority claimed from JP11321679A external-priority patent/JPS5637683A/ja
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Publication of FR2456389A1 publication Critical patent/FR2456389A1/fr
Application granted granted Critical
Publication of FR2456389B1 publication Critical patent/FR2456389B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/47—Schottky barrier electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/868—PIN diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/02—Contacts, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/14—Schottky barrier contacts

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thyristors (AREA)

Abstract

L'INVENTION SE RAPPORTE A UNE STRUCTURE D'ELECTRODES A UTILISER DANS DES DISPOSITIFS SEMI-CONDUCTEURS. SELON L'INVENTION, ELLE COMPREND UNE COUCHE 20 DE SEMI-CONDUCTEUR, UNE COUCHE CONDUCTRICE 23 DISPOSEE SUR UNE SURFACE DE LA COUCHE 20, DES PREMIERES REGIONS 22 ENTRE LES COUCHES 20 ET 23 ET JOUANT LE ROLE DE PASSAGES PRINCIPAUX POUR LA TRANSMISSION DES PORTEURS MINORITAIRES DE LA COUCHE 20 A LA COUCHE 23; ET DES SECONDES REGIONS 21 ENTRE LES COUCHES 20 ET 23 ET JOUANT LE ROLE DE PASSAGES PRINCIPAUX POUR LE TRANSFERT DE PORTEURS MAJORITAIRES ENTRE ELLES, LES PREMIERES ET SECONDES REGIONS ETANT SELECTIVEMENT FORMEES SUR LA COUCHE 20, AFIN D'ETRE ADJACENTES LES UNES AUX AUTRES ET DE SE TROUVER PARALLELES AUX TRAJETS ELECTRIQUES. L'INVENTION S'APPLIQUE NOTAMMENT A LA FORMATION DE DIODES, THYRISTORS ET TRANSISTORS.
FR8004965A 1979-05-07 1980-03-05 Structure d'electrodes pour dispositifs semi-conducteurs Expired FR2456389B1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP5560179A JPS5949712B2 (ja) 1979-05-07 1979-05-07 半導体整流ダイオ−ド
JP5560079A JPS5949711B2 (ja) 1979-05-07 1979-05-07 電極付半導体装置
JP11321679A JPS5637683A (en) 1979-09-04 1979-09-04 Semiconductor rectifying device

Publications (2)

Publication Number Publication Date
FR2456389A1 true FR2456389A1 (fr) 1980-12-05
FR2456389B1 FR2456389B1 (fr) 1985-09-27

Family

ID=27295641

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8004965A Expired FR2456389B1 (fr) 1979-05-07 1980-03-05 Structure d'electrodes pour dispositifs semi-conducteurs

Country Status (6)

Country Link
US (1) US4587547A (fr)
CA (1) CA1150417A (fr)
DE (1) DE3008034A1 (fr)
FR (1) FR2456389B1 (fr)
GB (1) GB2050694B (fr)
NL (1) NL188434C (fr)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0077004A2 (fr) * 1981-10-07 1983-04-20 Hitachi, Ltd. Diode redresseuse à semi-conducteur
EP0103138A2 (fr) * 1982-08-11 1984-03-21 Hitachi, Ltd. Diode redresseuse semi-conductrice
EP0327901A1 (fr) * 1988-02-12 1989-08-16 Asea Brown Boveri Ag Thyristor GTO de forte puissance et méthode de fabrication
EP0430133A2 (fr) * 1989-11-28 1991-06-05 eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG Dispositif semi-conducteur de puissance comportant des courts-circuits d'émetteur
EP0485059A2 (fr) * 1990-09-28 1992-05-13 Kabushiki Kaisha Toshiba Dispositif semi-conducteur comportant une diode de type pin à une tension de claquage élevée
WO1999013512A1 (fr) * 1997-09-10 1999-03-18 Infineon Technologies Ag Composant semi-conducteur comportant une zone de derive

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0130669A1 (fr) * 1983-04-30 1985-01-09 Kabushiki Kaisha Toshiba Thyristor à blocage par la gâchette avec structure de cathode en forme de maille
DE3628857A1 (de) * 1985-08-27 1987-03-12 Mitsubishi Electric Corp Halbleitereinrichtung
DE3633161A1 (de) * 1986-09-30 1988-04-07 Licentia Gmbh Halbleiterbauelement mit einer anodenseitigen p-zone und einer anliegenden schwach dotierten n-basiszone
JPH0795592B2 (ja) * 1987-04-14 1995-10-11 株式会社豊田中央研究所 静電誘導型半導体装置
US5119148A (en) * 1989-11-29 1992-06-02 Motorola, Inc. Fast damper diode and method
JP2663679B2 (ja) * 1990-04-20 1997-10-15 富士電機株式会社 伝導度変調型ｍｏｓｆｅｔ
DE4201183A1 (de) * 1992-01-17 1993-07-22 Eupec Gmbh & Co Kg Leistungsdiode
US5369291A (en) * 1993-03-29 1994-11-29 Sunpower Corporation Voltage controlled thyristor
US5360990A (en) * 1993-03-29 1994-11-01 Sunpower Corporation P/N junction device having porous emitter
DE4342482C2 (de) * 1993-12-13 1995-11-30 Siemens Ag Schnelle Leistungshalbleiterbauelemente
US5705830A (en) * 1996-09-05 1998-01-06 Northrop Grumman Corporation Static induction transistors
JP4017258B2 (ja) * 1998-07-29 2007-12-05 三菱電機株式会社 半導体装置
EP1198011A4 (fr) * 1999-07-15 2008-02-27 Rohm Co Ltd Dispositif a semiconducteur comprenant un transistor a effet de champ mos
DE102004005084B4 (de) * 2004-02-02 2013-03-14 Infineon Technologies Ag Halbleiterbauelement
US20050275065A1 (en) * 2004-06-14 2005-12-15 Tyco Electronics Corporation Diode with improved energy impulse rating
DE102004044141A1 (de) * 2004-09-13 2006-03-30 Robert Bosch Gmbh Halbleiteranordnung zur Spannungsbegrenzung
JP2006295062A (ja) * 2005-04-14 2006-10-26 Rohm Co Ltd 半導体装置
JP2010283132A (ja) * 2009-06-04 2010-12-16 Mitsubishi Electric Corp 半導体装置
JP5321669B2 (ja) 2010-11-25 2013-10-23 株式会社デンソー 半導体装置
US8809902B2 (en) * 2011-10-17 2014-08-19 Infineon Technologies Austria Ag Power semiconductor diode, IGBT, and method for manufacturing thereof
US9123828B2 (en) 2013-11-14 2015-09-01 Infineon Technologies Ag Semiconductor device and method for forming a semiconductor device
JP6443267B2 (ja) 2015-08-28 2018-12-26 株式会社デンソー 半導体装置
WO2017149607A1 (fr) * 2016-02-29 2017-09-08 三菱電機株式会社 Dispositif à semi-conducteurs
JP6846119B2 (ja) * 2016-05-02 2021-03-24 株式会社 日立パワーデバイス ダイオード、およびそれを用いた電力変換装置
EP3925002A1 (fr) * 2019-02-12 2021-12-22 MACOM Technology Solutions Holdings, Inc. Limiteurs à diode de région multi-i monolithiques

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1227138A (fr) * 1958-06-25 1960-08-18 Siemens Ag Diode de commutation
FR1555029A (fr) * 1967-02-10 1969-01-24
FR2371779A1 (fr) * 1976-11-19 1978-06-16 Philips Nv Dispositif semi-conducteur a faible capacite parasite et son procede de fabrication

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL278058A (fr) * 1961-05-26
US3395320A (en) * 1965-08-25 1968-07-30 Bell Telephone Labor Inc Isolation technique for integrated circuit structure
CH452710A (de) * 1966-12-29 1968-03-15 Bbc Brown Boveri & Cie Verfahren zur Herstellung eines steuerbaren Halbleiterventils mit pnpn Struktur mit einer mit Kurzschlüssen versehenen Emitterzone
US3497776A (en) * 1968-03-06 1970-02-24 Westinghouse Electric Corp Uniform avalanche-breakdown rectifiers
US3617829A (en) * 1969-12-01 1971-11-02 Motorola Inc Radiation-insensitive voltage standard means
US3641403A (en) * 1970-05-25 1972-02-08 Mitsubishi Electric Corp Thyristor with degenerate semiconductive region
JPS5213918B2 (fr) * 1972-02-02 1977-04-18
JPS5548705B2 (fr) * 1973-06-28 1980-12-08
US3918082A (en) * 1973-11-07 1975-11-04 Jearld L Hutson Semiconductor switching device
DE2506102C3 (de) * 1975-02-13 1982-03-25 Siemens AG, 1000 Berlin und 8000 München Halbleitergleichrichter
US4156246A (en) * 1977-05-25 1979-05-22 Bell Telephone Laboratories, Incorporated Combined ohmic and Schottky output transistors for logic circuit

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1227138A (fr) * 1958-06-25 1960-08-18 Siemens Ag Diode de commutation
DE1133472B (de) * 1958-06-25 1962-07-19 Siemens Ag Verfahren zum Herstellen einer Halbleiteranordnung und danach hergestellte Halbleiteranordnung
FR1555029A (fr) * 1967-02-10 1969-01-24
CH474154A (de) * 1967-02-10 1969-06-15 Licentia Gmbh Halbleiterbauelement
FR2371779A1 (fr) * 1976-11-19 1978-06-16 Philips Nv Dispositif semi-conducteur a faible capacite parasite et son procede de fabrication

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
EXBK/70 *

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0077004A2 (fr) * 1981-10-07 1983-04-20 Hitachi, Ltd. Diode redresseuse à semi-conducteur
EP0077004A3 (en) * 1981-10-07 1985-09-18 Hitachi, Ltd. Semiconductor rectifier diode
EP0103138A2 (fr) * 1982-08-11 1984-03-21 Hitachi, Ltd. Diode redresseuse semi-conductrice
EP0103138A3 (en) * 1982-08-11 1985-09-11 Hitachi, Ltd. Semiconductor rectifier diode
EP0327901A1 (fr) * 1988-02-12 1989-08-16 Asea Brown Boveri Ag Thyristor GTO de forte puissance et méthode de fabrication
EP0430133A3 (en) * 1989-11-28 1991-09-11 Eupec Europaeische Gesellschaft Fuer Leistungshalbleiter Mbh & Co. Kg Power semiconductor device having emitter shorts
EP0430133A2 (fr) * 1989-11-28 1991-06-05 eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG Dispositif semi-conducteur de puissance comportant des courts-circuits d'émetteur
US5142347A (en) * 1989-11-28 1992-08-25 Siemens Aktiengesellschaft Power semiconductor component with emitter shorts
EP0485059A2 (fr) * 1990-09-28 1992-05-13 Kabushiki Kaisha Toshiba Dispositif semi-conducteur comportant une diode de type pin à une tension de claquage élevée
US5162876A (en) * 1990-09-28 1992-11-10 Kabushiki Kaisha Toshiba Semiconductor device having high breakdown voltage
EP0485059A3 (en) * 1990-09-28 1992-12-02 Kabushiki Kaisha Toshiba Semiconductor device including a pin-diode having high breakdown voltage
WO1999013512A1 (fr) * 1997-09-10 1999-03-18 Infineon Technologies Ag Composant semi-conducteur comportant une zone de derive
US6388271B1 (en) 1997-09-10 2002-05-14 Siemens Aktiengesellschaft Semiconductor component

Also Published As

Publication number Publication date
NL8001226A (nl) 1980-11-11
US4587547A (en) 1986-05-06
GB2050694B (en) 1983-09-28
NL188434C (nl) 1992-06-16
DE3008034A1 (de) 1980-11-13
CA1150417A (fr) 1983-07-19
NL188434B (nl) 1992-01-16
DE3008034C2 (fr) 1989-04-20
GB2050694A (en) 1981-01-07
FR2456389B1 (fr) 1985-09-27

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